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    • 2. 发明专利
    • Plasma generator and cvd device
    • 等离子体发生器和CVD装置
    • JP2013004474A
    • 2013-01-07
    • JP2011137661
    • 2011-06-21
    • Toshiba Mitsubishi-Electric Industrial System Corp東芝三菱電機産業システム株式会社Mitsubishi Electric Corp三菱電機株式会社
    • TABATA YOICHIROWATANABE KENSHIOINUMA MANABUINANAGA YASUTAKA
    • H05H1/24C23C16/503H01L21/31
    • PROBLEM TO BE SOLVED: To provide a plasma generator of a simple configuration capable of efficiently taking out generated plasma excitation gas.SOLUTION: A plasma generator comprises an electrode cell, a power supply 17 which applies an AC voltage to the electrode cell, a housing which surrounds the electrode cell, and a material gas supply section which supplies a material gas from the outside of the housing to the outer periphery of the electrode cell. The electrode cell includes a low voltage electrode 1, a high voltage electrode 3, and dielectrics 2a, 2b, has a dielectric barrier discharge space 6, and is a doughnut shape with a penetration hole PH. The plasma generator further comprises an insulation cylinder 21 disposed in the penetration hole PH and having a jet hole 21x in a cylindrical side surface, and a pressure reduction unit which reduces the pressure in the cavity 21A of the insulation cylinder 21.
    • 要解决的问题:提供能够有效地取出产生的等离子体激发气体的简单配置的等离子体发生器。 解决方案:等离子体发生器包括电极单元,向电极单元施加AC电压的电源17,围绕电极单元的壳体和从外部供应材料气体的材料气体供应部分 壳体到电极单元的外周。 电极单元包括低电压电极1,高电压电极3和电介质2a,2b,具有介质阻挡放电空间6,并且是具有穿透孔PH的环形形状。 等离子体发生器还包括设置在穿透孔PH中并且具有在圆柱形侧表面中的喷射孔21x的绝缘筒21和减小绝缘筒21的空腔21A中的压力的​​减压单元。 (C)2013,JPO&INPIT
    • 3. 发明专利
    • Apparatus for generating active particle
    • 用于生成活性颗粒的装置
    • JP2010272355A
    • 2010-12-02
    • JP2009123251
    • 2009-05-21
    • Mitsubishi Electric CorpToshiba Mitsubishi-Electric Industrial System Corp三菱電機株式会社東芝三菱電機産業システム株式会社
    • OINUMA MANABUINANAGA YASUTAKATANIMURA YASUHIROKUZUMOTO MASAKIWATANABE KENSHI
    • H05H1/24B01J19/08B08B7/00H01L21/31
    • PROBLEM TO BE SOLVED: To provide an apparatus for generating an active particle by which the generation density and generation efficiency of the active particle having a predetermined service life shorter than a life of ozone can be improved.
      SOLUTION: The apparatus for generating the active particle applies a high voltage between a ground electrode 1 and a high voltage electrode 2 which is opposite to the ground electrode 1 via an air gap and of which the surface on the air gap side is covered with a dielectric 4 to generate dielectric barrier discharge therebetween, and supplies a raw material gas 8 to the air gap to generate the active particle by the dielectric barrier discharge. A value obtained by dividing the service life of the active particle by the average time when the raw material gas 8 stays in the air gap is not smaller than 0.1 or not larger 10, and discharge power supplied to a unit area of the ground electrode 1 and the high voltage electrode 2 is increased from an upstream side of the raw material gas flow toward a downstream side thereof.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种生成活性粒子的装置,通过该装置可以提高具有比臭氧寿命短的预定寿命的活性粒子的发生密度和发电效率。 解决方案:用于产生有源粒子的装置经由气隙在接地电极1和与接地电极1相对的高压电极2之间施加高电压,其中气隙侧的表面为 覆盖有电介质4以在其间产生电介质阻挡放电,并且将原料气体8供应到气隙,以通过电介质阻挡放电产生活性粒子。 通过将活性粒子的使用寿命除以原料气体8停留在气隙中的平均时间而得到的值为0.1以上10以上,供给到接地电极1的单位面积的放电电力 并且高压电极2从原料气流的上游侧向其下游侧增加。 版权所有(C)2011,JPO&INPIT
    • 5. 发明专利
    • Manufacturing method of semiconductor device and oxidation treatment device
    • 半导体器件和氧化处理器件的制造方法
    • JP2010232280A
    • 2010-10-14
    • JP2009076054
    • 2009-03-26
    • Mitsubishi Electric Corp三菱電機株式会社
    • KAWASE KAZUMASAOINUMA MANABUMIURA NARIHISA
    • H01L21/31H01L21/316
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, along with an oxidation treatment device, capable of suppressing degradation of performance due to substrate damage during oxide film formation. SOLUTION: A substrate 6a, which includes one surface, is prepared. Oxidation treatment is performed on one surface. At oxidation treatment, low-temperature thermal decomposition of O3 gas introduced generates O( 3 P) radicals. The O( 3 P) radicals are irradiated and excited, with a reddish orange light emitted from a light source 4a, to generate O( 1 D) radical. An oxide film is formed on one surface of the substrate 6a by O( 1 D) radical, at a low temperature, without damages. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够抑制氧化膜形成期间由于基板损伤导致的性能劣化的半导体装置的制造方法以及氧化处理装置。

      解决方案:制备包括一个表面的基板6a。 在一个表面进行氧化处理。 在氧化处理时,引入的O 3气体的低温热分解会产生O( 3 P)自由基。 用从光源4a发出的红橙色光照射和激发O( 3 P)基团,以产生O(SP)1 / SP> D)基团。 在低温下,通过O(SP> 1 SP)基团在基板6a的一个表面上形成氧化膜,而不损坏。 版权所有(C)2011,JPO&INPIT

    • 6. 发明专利
    • Plasma processing device
    • 等离子体加工装置
    • JP2014154248A
    • 2014-08-25
    • JP2013020492
    • 2013-02-05
    • Mitsubishi Electric Corp三菱電機株式会社
    • OINUMA MANABUNAKAMURA YASUHIROINANAGA YASUTAKA
    • H05H1/24
    • PROBLEM TO BE SOLVED: To provide a plasma processing device capable of efficiently processing a surface of a processed body.SOLUTION: A plasma processing device includes a ground electrode 2; and a high-pressure electrode 3 which is disposed so as to oppose to the ground electrode 2 through a cavity 7, and has a conductive layer. By supplying discharging gas into the cavity 7 and applying high voltage on the high-pressure electrode 3, discharge is generated near atmospheric pressure in the cavity 7. The discharging gas including atomic oxygen generated by the discharge is jetted out from slits 11a and 11b formed on the ground electrode 2, and the atomic oxygen is contacted with a honeycombs structure 13, thereby processing a surface of the honeycombs structure 13. One pair of the slits 11a and 11b is oriented so as to make the discharging gas intersect each other between the ground electrode 2 and the honeycomb structure 13.
    • 要解决的问题:提供能够有效地处理加工体的表面的等离子体处理装置。解决方案:等离子体处理装置包括接地电极2; 以及高压电极3,其通过空腔7配置成与接地电极2相对,并且具有导电层。 通过向空腔7内供给排出气体并在高压电极3上施加高电压,在空腔7附近大气压附近产生放电。包括由放电产生的原子氧的放电气体从形成的狭缝11a和11b喷出 在接地电极2上,并且原子氧与蜂窝结构13接触,从而处理蜂窝结构13的表面。一对狭缝11a和11b被定向成使排出气体彼此相交 接地电极2和蜂窝结构体13。
    • 7. 发明专利
    • Surface treatment apparatus and surface treatment method
    • 表面处理装置和表面处理方法
    • JP2013004405A
    • 2013-01-07
    • JP2011136348
    • 2011-06-20
    • Mitsubishi Electric Corp三菱電機株式会社
    • INANAGA YASUTAKAOINUMA MANABUTANIMURA YASUHIRONAKAMURA YASUHIRO
    • H05H1/24B08B7/00C23C16/505
    • PROBLEM TO BE SOLVED: To achieve a surface treatment with high energy efficiency by allowing a short-life radical generated by discharge to be ejected toward a workpiece before the radical is subject to attenuation.SOLUTION: A discharge is generated between a conductive electrode 6 having a fine through hole 15 and a high-voltage conductor 11 coated with a dielectric coating 12. The high-voltage conductor 11 is displaced toward an upstream side in a gas velocity direction in the vicinity of the fine through hole 15. Thereby, discharge regions 40 correspond to the position of the high-voltage conductor 11, and are limited to the upstream side in the gas velocity direction in the vicinity of the fine through hole 15. Thus, a surface treatment of a workpiece (not shown) is performed by efficiently extracting active particles generated by the discharge by allowing the active particles to join a gas flow before they are subject to attenuation, and by ejecting the active particles from an outlet of the fine through hole 15 toward the workpiece placed oppositely to the outlet.
    • 要解决的问题:通过在自由基被衰减之前通过允许通过排出产生的短寿命的自由基朝向工件喷射来实现具有高能量效率的表面处理。 解决方案:在具有细通孔15的导电电极6和涂覆有电介质涂层12的高压导体11之间产生放电。高电压导体11以气体速度向上游侧位移 由此,放电区域40对应于高压导体11的位置,并被限制在细通孔15附近的气体速度方向的上游侧。 因此,工件(未图示)的表面处理通过有效地提取由放电产生的活性粒子,通过使活性粒子在经受衰减之前接合气体流动,并且将活性粒子从 细孔15朝向与出口相对设置的工件。 版权所有(C)2013,JPO&INPIT
    • 8. 发明专利
    • Discharge electrode and air cleaning apparatus using the same
    • 放电电极和空气清洁装置使用它
    • JP2009066502A
    • 2009-04-02
    • JP2007236540
    • 2007-09-12
    • Mitsubishi Electric Corp三菱電機株式会社
    • INANAGA YASUTAKAOINUMA MANABUNAKAI TAKAFUMI
    • B01D53/44B01D53/81B01J19/08
    • Y02A50/235
    • PROBLEM TO BE SOLVED: To provide a discharge electrode preventing uneven discharge due to the influence of moisture adsorbed in an adsorption material and causing no lowering of decomposition performance, and an air cleaning apparatus using the same. SOLUTION: In the discharge electrode 1, tubular high voltage electrodes 3 are concentrically disposed in the tube of a tubular grounding electrode 2 with given intervals, a tubular dielectric 4 is disposed in the high voltage electrode 3 side so as to cover the high voltage electrodes 3, both end faces of the grounding electrode 2 and high voltage electrodes 3 are shielded with an insulation plate 5, the adsorption material 6 is filled in the space formed by the grounding electrode 2, high voltage electrodes 3 and insulation plate 5. The introduction port 7 of treating object gas is provided to the side face of the grounding electrode 2, and a gas distributor 8 is attached, and the discharge port 9 of the treated gas is provided to the opposite face of the introduction port 7. This configuration actualizes the stable discharge and efficient treatment of volatile organic compounds. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种防止由吸附材料吸附的水分的影响引起的不均匀放电并且不会降低分解性能的放电电极,以及使用该放电电极的空气净化装置。 解决方案:在放电电极1中,管状高压电极3以给定的间隔同心地设置在管状接地电极2的管中,管状电介质4设置在高压电极3侧,以覆盖 高压电极3,接地电极2的两端面和高压电极3被绝缘板5屏蔽,吸附材料6填充在由接地电极2,高压电极3和绝缘板5形成的空间中 处理对象气体的引入口7设置在接地电极2的侧面,并且安装有气体分配器8,并且处理气体的排出口9设置在引入口7的相对面上。 该配置实现了挥发性有机化合物的稳定排放和有效处理。 版权所有(C)2009,JPO&INPIT
    • 9. 发明专利
    • プラズマ処理装置、プラズマ処理方法、接着方法および複合構造体
    • 等离子体加工设备,等离子体处理方法,接合方法和复合结构
    • JP2015032486A
    • 2015-02-16
    • JP2013161776
    • 2013-08-02
    • 三菱電機株式会社Mitsubishi Electric Corp
    • OINUMA MANABUNAKAMURA YASUHIROINANAGA YASUTAKA
    • H05H1/24B08B7/00
    • 【課題】表面処理性能の低下および表面処理の不均一化を抑制するとともに、ランニングコストを低減させることができるプラズマ処理装置を得る。【解決手段】処理体1に対する大気圧プラズマユニット2の移動方向についてスリット211よりも前方に設けられた吐出口411、この移動方向についてスリット211よりも後方に設けられた吸引口412および吐出口411と吸引口412とを連通する還流風路413が形成された還流配管41と、吸引口412から還流風路413に放電ガスが吸引され、吸引された放電ガスが吐出口411から放電ガスが吐出されるように還流風路413に放電ガスの流れを発生させるファン42とを備えている。【選択図】図1
    • 要解决的问题:为了获得在降低运行成本的同时降低表面处理性能和不均匀表面处理的劣化的等离子体处理装置。解决方案:等离子体处理装置包括再循环管道41,其中提供排出口411 在处理体1的大气压等离子体单元2的移动方向上的狭缝211的前方,设置在狭缝211的移动方向的后方的吸入口412和将排出口411 形成吸入口412,以及用于在再循环空气导管413中产生排出气体流的风扇42,使得排出气体从吸入口412被吸入空气导管413,从排出口411排出。
    • 10. 发明专利
    • ガス回収再充填システム
    • 气体回收再充电系统
    • JP2014228127A
    • 2014-12-08
    • JP2013110887
    • 2013-05-27
    • 三菱電機株式会社Mitsubishi Electric Corp
    • CHIKAISHI MASAHIROWADA NOBORUOINUMA MANABUINANAGA YASUTAKA
    • F17C5/02F17C13/00
    • 【課題】対象タンクから回収したSF6のうち、再充填できずに残るSF6の割合を低減することが可能なガス回収再充填システムを提供する。【解決手段】対象タンク(1)内のガスを分離濃縮する分離装置(2)と、分離装置で分離濃縮されたガスを液化する液化部(5)と、液化部に直結された気液分離器(6)と、気液分離器で分離された気相流体を回収する気相回収容器(7)と、気液分離器で分離された液相流体を回収する液相回収容器(8)と、気相回収容器に回収された気相流体と液相回収容器に回収された液相流体を対象タンクに還流することで再充填する制御部(20)とを備える。【選択図】図1
    • 要解决的问题:提供一种气体回收再充电系统,其能够降低SF6的速率,而不从目标罐回收的SF6中用SF6对目标罐进行再充电。解决方案:气体回收再充电系统包括:分离 装置(2)在目标罐(1)中分离和冷凝气体; 液化单元(5),液化由分离装置(2)分离和冷凝的气体; 直接连接到液化单元(5)的气液分离器(6); 回收由气液分离器(6)分离的气相流体的气相回收容器(7); 回收由气液分离器(6)分离的液相流体的液相回收容器(8); 以及将由气相回收容器(7)回收的气相流体和由液相回收容器(8)回收的液相流体回流到目标罐(1)的控制器(20),由此 用气体对目标罐(1)进行再充电。