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1. 发明专利

JP2005252287A Laser heat treatment method and apparatus, and semiconductor device 有权
标题翻译：激光热处理方法和装置，以及半导体器件
公开(公告)号：JP2005252287A
公开(公告)日：2005-09-15
申请号：JP2005106122
申请日：2005-04-01
申请人： Mitsubishi Electric Corp , Seiko Epson Corp , セイコーエプソン株式会社 , 三菱電機株式会社
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a laser heat treatment method and a laser heat treatment apparatus for forming a polycrystalline silicon film excellent in crystallinity in order to realize a thin film transistor with high mobility.
SOLUTION: A laser beam generated from a pulse laser light source whose wavelength is between 350 nm and 800 nm is made into a linear beam and, at the same time, is formed into a beam having an energy density gradient of ≥3mJ/cm
2 /μm or more in the width direction of the linear beam and laser heat treatment of an amorphous or polycrystalline silicon film on a substrate is performed by irradiation therewith while the beams are being moved in the width direction thereof.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了实现具有高迁移率的薄膜晶体管，提供一种激光热处理方法和用于形成结晶度优异的多晶硅膜的激光热处理设备。解决方案：将波长在350nm至800nm之间的脉冲激光光源产生的激光束制成线性光束，同时形成能量密度梯度≥3mJ的光束 / cm 2 /μm以上，在基板上的非晶或多晶硅膜的激光热处理通过照射进行，同时光束以宽度方向移动方向。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

DE60030517T2 未知
公开(公告)号：DE60030517T2
公开(公告)日：2007-01-11
申请号：DE60030517
申请日：2000-03-08
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

3. 发明专利

DE60030517T8 未知
公开(公告)号：DE60030517T8
公开(公告)日：2007-09-06
申请号：DE60030517
申请日：2000-03-08
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

4. 发明专利

DE60030517D1 未知
公开(公告)号：DE60030517D1
公开(公告)日：2006-10-19
申请号：DE60030517
申请日：2000-03-08
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

5. 发明公开

EP1256977A4 METHOD AND APPARATUS FOR PRODUCING POLYSILICON FILM, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：装置和方法用于制造多晶硅膜，半导体装置，以及它们的制造方法
公开(公告)号：EP1256977A4
公开(公告)日：2008-05-28
申请号：EP00964741
申请日：2000-10-06
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , NISHIMAE JUNICHI , OKAMOTO TATSUKI , SATO YUKIO , INOUE MITSUO , MIYASAKA MITSUTOSHI , JIROKU HIROAKI
IPC分类号： H01L21/20 , B23K26/00 , C23C14/58 , C23C16/24 , H01L21/336
CPC分类号： C23C14/5813 , B23K26/0066 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2201/40 , B23K2203/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A method of manufacturing polysilicon film comprises the steps of forming amorphous silicon film (33) on a glass substrate (31), the silicon film including a first area (33a) and a second area (33b) in contact with the first area (33b); irradiating the first area (33a) of the amorphous silicon film (33) with laser (35) having a wavelength of 390 nm to 640 nm to form a first polycrystalline area (34a); and irradiating the second area (33b) of the amorphous silicon film (33) and part of the first polycrystalline area (34a) in contact with the second area (33b) with laser (35) having a wavelength of 390 nm to 640 nm to form a second polycrystalline area (34b) in contact with the first polycrystalline area (34a).

6. 发明公开

EP1083590A4 METHOD FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于生产薄膜半导体COMPONENT
公开(公告)号：EP1083590A4
公开(公告)日：2002-09-18
申请号：EP00900401
申请日：2000-01-14
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： MIYASAKA MITSUTOSHI , OGAWA TETSUYA , TOKIOKA HIDETADA , SATOH YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L21/2026 , H01L21/268 , H01L29/04 , H01L29/66757
摘要： In a fabrication process for semiconductor devices having a crystalline semiconductor film formed on a substrate, said semiconductor film being an active layer of a transistor and being mainly composed of silicon and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film; in which the semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.

7. 发明公开

EP1087429A4 METHOD AND APPARATUS FOR LASER HEAT TREATMENT, AND SEMICONDUCTOR DEVICE 有权
标题翻译：方法和设备热处理技术激光束和半导体器件
公开(公告)号：EP1087429A4
公开(公告)日：2001-07-04
申请号：EP00907924
申请日：2000-03-08
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： B23K26/073 , H01L21/20 , H01L21/268 , H01L21/77
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： A laser beam (102) of 350-800 nm wavelength generated by a pulsed laser (101) is shaped into a line beam (300) of width (W0) and length (L0). The resulting beam (300) is emitted onto a film material (201) of amorphous or polycrystalline silicon on a substrate (203) for a heat treatment.

8. 发明专利

JP2009195968A Laser scribing apparatus 有权
标题翻译：激光扫描装置
公开(公告)号：JP2009195968A
公开(公告)日：2009-09-03
申请号：JP2008042773
申请日：2008-02-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ORITA YASUSHI , FUCHIGAMI HIROYUKI , INOUE MITSUO
IPC分类号： B23K26/00 , B23K26/03 , B23K26/08 , B23K101/40 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a laser scribing apparatus that accurately inspects defects simultaneously with laser scribing and that can surely repair the defects. SOLUTION: The laser scribing apparatus is equipped with a first laser oscillator 12 that emits a first laser beam 16 to be used for machining, a laser beam detector 18 that detects the first laser beam 16 passed through the pattern 11 of a thin film solar cell 4 to discriminate presence/no presence of a defect of the pattern, and an electric characteristic measuring instrument 23 that measures diode characteristics of the thin film solar cell 4 to discriminate presence/no presence of a short circuit and leakage. Further, the apparatus includes foreign matter removing means 13, 14, 20 that remove a foreign matter 17 from the defective part of the pattern 11 of the thin film solar cell 4 which is decided to be defective by the laser beam detector 18 and the electric characteristic measuring instrument 23, and a defective part repairing means that includes the first laser oscillator 12 which repairs the defective part where the foreign matter 17 is removed by the foreign matter removing means 13, 14, 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种激光划线装置，其可以用激光划线同时精确地检查缺陷，并且可以确定地修复缺陷。解决方案：激光划片装置配备有发射用于加工的第一激光束16的第一激光振荡器12，激光束检测器18，其检测通过图案11的第一激光束16的薄的薄膜太阳能电池4，以区分图案的缺陷的存在/不存在;以及电位特性测量仪23，其测量薄膜太阳能电池4的二极管特性，以区分存在/不存在短路和泄漏。此外，该装置包括异物除去装置13,14,20，其从由激光束检测器18判定为有缺陷的薄膜太阳能电池4的图案11的缺陷部分中除去异物17，特征测量仪23和缺陷部件修复装置，其包括第一激光振荡器12，其修复由异物除去装置13,14,20除去异物17的缺陷部分。（C） 2009年，JPO＆INPIT

9. 发明专利

JP2005072181A Method for manufacturing thin-film semiconductor 有权
标题翻译：制造薄膜半导体的方法
公开(公告)号：JP2005072181A
公开(公告)日：2005-03-17
申请号：JP2003298648
申请日：2003-08-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： INOUE MITSUO , TOKIOKA HIDETADA , YURA SHINSUKE
IPC分类号： H01L21/20 , H01L21/336
CPC分类号： H01L29/66757 , H01L21/2026
摘要： PROBLEM TO BE SOLVED: To prevent a stripe, where characteristics differ from those at other parts, from being generated in the joint of a scan when manufacturing a thin-film semiconductor in a laser recrystallization system.
SOLUTION: The method for manufacturing the thin-film semiconductor comprises: a scan irradiation process for condensing a first pulse laser beam having a visible wavelength in a line shape having the intensity distribution of almost a Gaussian shape in a width direction on the surface of the substrate for irradiation so that the line shape travels in the width direction for forming a polycrystalline silicon film on the surface of the substrate; a fringe treatment process for performing the scan irradiation process for one position in one direction, and then irradiates an end section region 38 at the fringe in parallel with the width direction in regions 36 that are subjected to scan irradiation with a second pulse laser beam having an ultraviolet wavelength; and the scan irradiation process to be made again so that a region that is a region adjacent to the region 36 covered by the scan irradiation process and partially overlaps with the end section region 38, where the fringe treatment process is made.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在激光再结晶系统中制造薄膜半导体时在扫描的关节中产生特征与其它部分不同的条纹。解决方案：用于制造薄膜半导体的方法包括：扫描照射处理，用于将具有可见波长的第一脉冲激光束以宽度方向的强度分布几乎为高斯形状的线形状用于照射的基板的表面，使得线形状在宽度方向上行进以在基板的表面上形成多晶硅膜; 用于对一个方向进行扫描照射处理的边缘处理工艺，然后在具有第二脉冲激光束的区域36中的与宽度方向平行的边缘处照射端部区域38，所述第二脉冲激光束具有紫外线波长; 并且再次进行扫描照射处理，使得与被扫描照射处理覆盖的区域36相邻的区域的区域与进行边缘处理处理的端部区域38部分重叠。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2012089691A Support member and solar power generation apparatus 有权
标题翻译：支持会员和太阳能发电设备
公开(公告)号：JP2012089691A
公开(公告)日：2012-05-10
申请号：JP2010235399
申请日：2010-10-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUJITA ATSUSHI , INOUE MITSUO , ECHIZENYA DAISUKE
IPC分类号： H01L31/042
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a support member which reduces the influence of heat deformation and improves the reliability of a module and a bonding part.SOLUTION: A long back rail 10, which is bonded to a rear surface of a solar cell module 100, has a body part 11 including bonding surfaces 12 which are provided so as to be spaced apart from each other and bonded to the solar cell module 100, upstanding surfaces 14 rising respectively from the bonding surfaces 12, and a connection surface 13 spanning the upstanding surfaces 14. Multiple notches 2, which are disposed intermittently, are formed on the bonding surfaces 12.
摘要翻译：要解决的问题：获得减少热变形影响的支撑构件，并提高模块和接合部的可靠性。解决方案：结合到太阳能电池模块100的后表面的长的后轨10具有主体部分11，其包括接合表面12，接合表面12设置成彼此间隔开并且接合到太阳能电池模块100，分别从接合表面12上升的直立表面14和跨越直立表面14的连接表面13.间断地设置的多个凹口2形成在接合表面12上。 C）2012，JPO＆INPIT

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