专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE60030517T8 未知
公开(公告)号：DE60030517T8
公开(公告)日：2007-09-06
申请号：DE60030517
申请日：2000-03-08
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

2. 发明专利

DE60030517T2 未知
公开(公告)号：DE60030517T2
公开(公告)日：2007-01-11
申请号：DE60030517
申请日：2000-03-08
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

3. 发明专利

DE60030517D1 未知
公开(公告)号：DE60030517D1
公开(公告)日：2006-10-19
申请号：DE60030517
申请日：2000-03-08
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/268 , B23K26/073 , H01L21/20 , H01L21/77
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam (102) generated from a pulse laser source (101) having a wavelength of 350 nm to 800 nm into a linear beam (300) having a width (W0) and a length (L0), and directing the linear beam (300) onto a film material (201) formed on a substrate (203).

4. 发明公开

EP1256977A4 METHOD AND APPARATUS FOR PRODUCING POLYSILICON FILM, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：装置和方法用于制造多晶硅膜，半导体装置，以及它们的制造方法
公开(公告)号：EP1256977A4
公开(公告)日：2008-05-28
申请号：EP00964741
申请日：2000-10-06
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , NISHIMAE JUNICHI , OKAMOTO TATSUKI , SATO YUKIO , INOUE MITSUO , MIYASAKA MITSUTOSHI , JIROKU HIROAKI
IPC分类号： H01L21/20 , B23K26/00 , C23C14/58 , C23C16/24 , H01L21/336
CPC分类号： C23C14/5813 , B23K26/0066 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2201/40 , B23K2203/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A method of manufacturing polysilicon film comprises the steps of forming amorphous silicon film (33) on a glass substrate (31), the silicon film including a first area (33a) and a second area (33b) in contact with the first area (33b); irradiating the first area (33a) of the amorphous silicon film (33) with laser (35) having a wavelength of 390 nm to 640 nm to form a first polycrystalline area (34a); and irradiating the second area (33b) of the amorphous silicon film (33) and part of the first polycrystalline area (34a) in contact with the second area (33b) with laser (35) having a wavelength of 390 nm to 640 nm to form a second polycrystalline area (34b) in contact with the first polycrystalline area (34a).

5. 发明公开

EP1087429A4 METHOD AND APPARATUS FOR LASER HEAT TREATMENT, AND SEMICONDUCTOR DEVICE 有权
标题翻译：方法和设备热处理技术激光束和半导体器件
公开(公告)号：EP1087429A4
公开(公告)日：2001-07-04
申请号：EP00907924
申请日：2000-03-08
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： B23K26/073 , H01L21/20 , H01L21/268 , H01L21/77
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： A laser beam (102) of 350-800 nm wavelength generated by a pulsed laser (101) is shaped into a line beam (300) of width (W0) and length (L0). The resulting beam (300) is emitted onto a film material (201) of amorphous or polycrystalline silicon on a substrate (203) for a heat treatment.

6. 发明公开

KR20090086945A PROCESS FOR PRODUCING ELECTRODE FOR ELECTRIC DISCHARGE SURFACE TREATMENT AND ELECTRODE FOR ELECTRIC DISCHARGE SURFACE TREATMENT 无效
标题翻译：电放电表面处理用电极的制造方法及放电表面处理用电极
公开(公告)号：KR20090086945A
公开(公告)日：2009-08-14
申请号：KR20097007458
申请日：2006-09-11
申请人： MITSUBISHI ELECTRIC CORP , IHI CORP
发明人： TERAMOTO HIROYUKI , SATO YUKIO , SUZUKI AKIHIRO , GOTO AKIHIRO , NAKAMURA KAZUSHI
IPC分类号： C23C26/00 , B22F5/00
CPC分类号： C23C26/00 , B22F1/0062 , B22F1/0085 , B22F2998/10 , C22C1/1084 , C22C19/07 , C23C8/12 , B22F1/0003 , B22F1/0096
摘要： A process for producing an electrode for electric discharge surface treatment capable of forming of a coating excelling in abrasion resistance over a temperature range from low to high temperature by electric discharge surface treatment; and such an electrode for electric discharge surface treatment. There is provided a process for producing an electrode for electric discharge surface treatment useful in electric discharge surface treatment in which using as an electrode a molded powder obtained by molding of a metal powder, or powder of metal compound, or powder of conductive ceramic, pulsed electric discharge is generated between the electrode and a work in a machining liquid or gas so that by the energy thereof, on the surface of the work there is formed either a coating consisting of the material of the electrode or a coating of substance resulting from reaction of the material of the electrode by the pulsed electric discharge energy, which process comprises increasing the oxygen within the powder; mixing together the powder with the oxygen increased, an organic binder and a solvent to thereby obtain a mixture liquid; carrying out granulation from the mixture liquid to thereby obtain granulated powder; and molding the granulated powder to thereby obtain a molded item of 4 to16 wt.% oxygen concentration. ® KIPO & WIPO 2009
摘要翻译：一种用于制造放电表面处理用电极的方法，其能够通过放电表面处理在低温到高温的温度范围内形成耐磨性优异的涂层; 和这种用于放电表面处理的电极。提供一种用于放电表面处理的放电表面处理用电极的制造方法，其特征在于，使用通过模塑金属粉末或金属化合物粉末或导电性陶瓷粉末而得到的成型粉末作为电极，在电极和加工液体或气体中的工件之间产生放电，使得通过其能量，在工件的表面上形成由电极的材料或由反应产生的物质的涂层组成的涂层的电极的材料通过脉冲放电能量，该过程包括增加粉末中的氧气; 将粉末与氧增加混合在一起，有机粘合剂和溶剂，从而获得混合液体; 从混合液中进行造粒，得到造粒粉末; 并成型造粒粉末，从而得到氧浓度为4〜16重量％的成型品。 ®KIPO＆WIPO 2009

7. 发明专利

JP2001044120A LASER HEAT TREATMENT METHOD AND LASER HEAT TREATMENT APPARATUS 失效
公开(公告)号：JP2001044120A
公开(公告)日：2001-02-16
申请号：JP22102199
申请日：1999-08-04
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/20 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To form a thin film having excellent crystalline property to manufacture a high performance thin film transistor by respectively collecting and radiating a first pulse laser beam and a second pulse laser beam in different absorption coefficient for the film material on the substrate in the shape of line to the same area of a film material on a substrate. SOLUTION: After light intensity is adjusted in an attenuator 5, a first pulse laser beam 3 is shaped into a line beam in 7, while after light intensity is adjusted in an attenuator 6, a second pulse laser beam 4 is shaped into a line beam in 8 and is then radiated to an amorphous silicon film 9. In this case, at the surface of amorphous silicon film, width direction of the line area radiated with the second pulse laser beam includes the width direction of the line area radiated with the first pulse laser beam. The first pulse laser beam is the laser beam of ultra-violet region, while the second pulse laser beam is the pulse laser beam in the visible region having the absorption coefficient lower than that of the first pulse laser beam.

8. 发明专利

JP2000260731A METHOD AND EQUIPMENT FOR LASER HEAT TREATMENT AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000260731A
公开(公告)日：2000-09-22
申请号：JP6310799
申请日：1999-03-10
申请人： MITSUBISHI ELECTRIC CORP , SEIKO EPSON CORP
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/20 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a high quality thin film having a large grain diameter stably by shaping the pulse laser light having a specified range of oscillation wavelength into the linear beam to heat-treat the film material on a substrate. SOLUTION: The laser beam 92 having a wavelength between about 350 nm and about 800 nm generated by a pulse laser light source 91 is adjusted to the specified intensity by a variable attenuator 93, and then is converted into a linear beam profile by a linear beam formation optical system 94 to be cast on a target 95. With this laser beam, the film material on a substrate is heated nearly evenly in the film thickness direction and there is few temperature distribution in the depthwise direction of the film material and therefore a crystal with a large grain diameter is grown in the one-dimensional transverse direction, that is, in the widthwise direction of the linear beam. The crystal grains of a polycrystalline silicon film formed by the laser heat treatment are made uniform in the widthwise direction of the linear beam which is the direction of crystal grown, that is, the movement (scanning) direction of a moving stage.

9. 发明专利

JP2005252287A Laser heat treatment method and apparatus, and semiconductor device 有权
标题翻译：激光热处理方法和装置，以及半导体器件
公开(公告)号：JP2005252287A
公开(公告)日：2005-09-15
申请号：JP2005106122
申请日：2005-04-01
申请人： Mitsubishi Electric Corp , Seiko Epson Corp , セイコーエプソン株式会社 , 三菱電機株式会社
发明人： OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO , MIYASAKA MITSUTOSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a laser heat treatment method and a laser heat treatment apparatus for forming a polycrystalline silicon film excellent in crystallinity in order to realize a thin film transistor with high mobility.
SOLUTION: A laser beam generated from a pulse laser light source whose wavelength is between 350 nm and 800 nm is made into a linear beam and, at the same time, is formed into a beam having an energy density gradient of ≥3mJ/cm
2 /μm or more in the width direction of the linear beam and laser heat treatment of an amorphous or polycrystalline silicon film on a substrate is performed by irradiation therewith while the beams are being moved in the width direction thereof.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2000286211A METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000286211A
公开(公告)日：2000-10-13
申请号：JP9435099
申请日：1999-03-31
申请人： SEIKO EPSON CORP , MITSUBISHI ELECTRIC CORP
发明人： MIYASAKA MITSUTOSHI , OGAWA TETSUYA , TOKIOKA HIDETADA , SATO YUKIO , INOUE MITSUO , SASAGAWA TOMOHIRO
IPC分类号： H01L21/20 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To manufacture a superior thin-film semiconductor device at a low- temperature step in a stable state after forming a base protective film on a substrate, by forming a semiconductor film on the base protective film and by applying pulse laser within a specified range which has sufficient intensity, to melt a part of the semiconductor film on the semiconductor film. SOLUTION: After forming an oxide silicon film as a base protective film 102 on a substrate 101, a semiconductor film 103 is formed on the base protective film 102. The semiconductor film 103 is irradiated with a pulse laser beam. The pulse laser light has a wavelength which is higher than about 370 nm and less than 710 nm and has sufficient intensity of a irradiation energy density on the semiconductor film 103 to melt a part of the semiconductor film 103. By such means the oxide silicon film as the base protective film 102 makes the boundary between the base protective film 102 and the semiconductor film 103 satisfactory in quality. Additionally, a satisfactory crystal component becomes a crystal growing nucleus caused by the crystal particle boundary or a defective part which is easily molten, by using a pulse laser having such a wavelength.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式