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1. 发明专利

JP2007165427A Semiconductor device, and method of manufacturing same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007165427A
公开(公告)日：2007-06-28
申请号：JP2005357173
申请日：2005-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , OZAKI HIROYUKI , KAWATO HISASHI , NAKAGAWA SHINYA
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L2224/45124 , H01L2224/48137 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To miniaturize a semiconductor device by minimizing an unneeded space. SOLUTION: The semiconductor device includes a frame made of metal having a lead terminal 21; a power chip mounted on the upper surface of the die pad of the frame; an IC chip mounted at the IC chip mount of the frame; an insulating sheet 7 installed at the side of a lower surface that opposes the upper surface of the die pad; and a mold resin that allows the lead terminal 21 to project, exposes the lower surface of the insulating sheet 7 to an outer surface, seals the IC chip and the power chip, and has thermal conductivity that is smaller than that of the insulating sheet 7. In the semiconductor device, the insulating sheet 7 has a part 41 where a partial or entire corner 42 is chamfered. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过最小化不需要的空间来使半导体器件小型化。解决方案：半导体器件包括具有引线端子21的金属制成的框架; 功率芯片，安装在框架的芯片焊盘的上表面上; 安装在框架的IC芯片安装座上的IC芯片; 绝缘片7，其安装在与所述管芯焊盘的上表面相对的下表面侧; 以及允许引线端子21突出的模制树脂，将绝缘片7的下表面暴露于外表面，密封IC芯片和功率芯片，并且具有比绝缘片7小的导热性在半导体装置中，绝缘片7具有部分或整个角部42被倒角的部分41。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006237305A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006237305A
公开(公告)日：2006-09-07
申请号：JP2005050241
申请日：2005-02-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAWATO HISASHI , OTA TATSUO , HAYASHI KENICHI , OZAKI HIROYUKI
IPC分类号： H01L23/40 , H01L23/28
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device where occurrence of a crack at the time of fitting a radiation fin can be suppressed. SOLUTION: The semiconductor device 10 has a notch 24. A semiconductor element sealed by a resin package is fixed to a member so that it is sandwiched between a head of a screw and a member having a female screw engaged with the screw in a state where the axis of the screw is stored in the notch 24, and is placed on a lead frame. The device is provided with a non-contact part 30 which is installed in a corner sandwiched between the notch 24 and an outer edge 22 where the notch 24 is formed, for avoiding contact with the head of the screw when it is fixed to the member; and a reinforcing member included in the package 12 so that it exists between the head of the screw and the member when it is fixed to the member by the screw. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以抑制在安装散热片时发生裂纹的半导体器件。解决方案：半导体器件10具有凹口24.由树脂封装件密封的半导体元件被固定到构件上，使得它被夹在螺钉的头部和具有与螺钉接合的内螺纹的构件之间其中螺钉的轴线存储在凹口24中并被放置在引线框架上的状态。该装置设置有非接触部分30，该非接触部分30安装在夹在切口24和形成有切口24的外边缘22之间的拐角中，以避免当螺钉固定到构件上时与螺钉的头部接触 ; 以及包装在包装12中的加强构件，使得当通过螺钉将其固定到构件时，该加强构件存在于螺钉的头部和构件之间。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007165426A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007165426A
公开(公告)日：2007-06-28
申请号：JP2005357172
申请日：2005-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , OZAKI HIROYUKI , KAWATO HISASHI , NAKAGAWA SHINYA
IPC分类号： H01L25/18 , H01L25/07
CPC分类号： H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for improving heat radiation properties and strength around a screw mounting hole. SOLUTION: The semiconductor device includes a frame made of metal having a lead terminal 21 for input/output to and from a power chip and a lead terminal for input/output to and from an IC chip at opposing sides; a power chip mounted on the first surface of the power chip mount of the frame; an IC chip mounted on the first surface of the IC chip mount of the frame; a rectangular insulating sheet installed at the side of a second surface that opposes the first surface of the power chip mount; a mold resin 6 that allows the lead terminal to project, exposes one surface of the resin sheet to the outer surface, seals at least the IC chip and the power chip, and has thermal conductivity that is smaller than that of the insulating sheet; and a screw fastener 9 provided near an edge in the direction of a long side for screw-fastening the mold resin 6. A cutout is formed in the insulating sheet so that the screw fastener 9 is wrapped from two directions, and the length of the long side of the insulating sheet is made longer than the distance between the screw fasteners 9. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高螺钉安装孔周围的散热性能和强度的半导体器件。解决方案：半导体器件包括由金属构成的框架，该框架具有用于从功率芯片输入/输出的引线端子21和用于在相对侧从IC芯片输入/输出的引线端子; 安装在框架的功率芯片安装座的第一表面上的功率芯片; 安装在框架的IC芯片安装架的第一表面上的IC芯片; 安装在与电源芯片安装座的第一表面相对的第二表面侧的矩形绝缘片; 允许引线端子突出的模制树脂6，将树脂片的一个表面暴露于外表面，至少密封IC芯片和功率芯片，并且具有小于绝缘片的导热性; 以及设置在长边方向上的边缘附近的螺钉紧固件9，用于螺纹固定模制树脂6.在绝缘片中形成切口，使得螺钉紧固件9从两个方向包裹，并且长度使绝缘片的长边长于螺丝紧固件9之间的距离。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007165425A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2007165425A
公开(公告)日：2007-06-28
申请号：JP2005357171
申请日：2005-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAKI HIROYUKI , KAWATO HISASHI , NAKAGAWA SHINYA , HAYASHI KENICHI
IPC分类号： H01L23/28
CPC分类号： H01L21/565 , H01L23/3107 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a resin sheet arranged on the backside of a die pad on the frame and handling a high current in which heat generated from a power chip can be dissipated efficiently to the outside while ensuring high insulation. SOLUTION: The semiconductor device includes a power chip 5, an IC chip 7, a bending frame 1 equipped with a die pad 1a for mounting the power chip 5 on the surface and a mounting portion of the IC chip 7, a resin sheet 3 provided on the backside of the die pad 1a such that one side adheres thereto, and a mold resin 2 molding the power chip 5, the IC chip 7, the die pad 1a and the resin sheet 3 such that the other side of the resin sheet 3 is exposed. In the surface of the mold resin 2 on the side opposite to the exposed surface of the resin sheet 3, a trench 10 extends in the direction parallel with an insulation sheet and perpendicular to the injection port of the mold resin 2. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种半导体器件，其具有布置在框架上的管芯焊盘的背面上的树脂片，并且处理高电流，其中从电力芯片产生的热可以有效地散发到外部，同时确保高绝缘。解决方案：半导体器件包括功率芯片5，IC芯片7，配备有用于将功率芯片5安装在表面上的管芯焊盘1a和IC芯片7的安装部分的弯曲框架1，树脂片1，其设置在模片垫1a的背面，使得一面粘附在其上;模制树脂2，模制功率芯片5，IC芯片7，芯片焊盘1a和树脂片3，使得树脂片3露出。在模塑树脂2的与树脂片3的暴露表面相对的一侧的表面上，沟槽10沿与绝缘片平行的方向延伸并垂直于模制树脂2的注入口延伸。（C）2007，JPO＆INPIT

5. 发明专利

JP2005311214A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005311214A
公开(公告)日：2005-11-04
申请号：JP2004129254
申请日：2004-04-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAKI HIROYUKI , KAWATO HISASHI , TAKESHITA TATSUYUKI , FUNAKOSHI NOBUHITO , HAYASHI KENICHI
IPC分类号： H01L23/28 , H01L23/50
CPC分类号： H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/92247 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with an excellent heat dissipation characteristic and having a stable heat dissipation efficiency. SOLUTION: The semiconductor device whose chip is molded by a resin includes a frame 1 having a front side and a rear side and including a lead part 1c, a die pad 1a, and a connection part 1b for interconnecting the lead 1c and the die pad 1a; a power chip 5 placed on the front side of the die pad 1a; an insulator 3 having first and second sides opposed to each other and arranged, so that the rear side of the die pad part 1a contacts the first face; and a mold resin 2 provided to seal the power chip on the first side of the insulator 3. The connection part 1b sealed by the mold resin has a hole. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的散热特性并具有稳定的散热效率的半导体器件。解决方案：其芯片由树脂模制的半导体器件包括具有前侧和后侧的框架1，其包括引线部分1c，芯片焊盘1a和用于将引线1c和芯片焊盘1a; 放置在管芯焊盘1a的前侧的电源芯片5; 绝缘体3，其具有彼此相对并且布置的第一和第二侧，使得芯片焊盘部分1a的后侧与第一面接触; 以及设置成密封绝缘体3的第一面上的功率芯片的模制树脂2.由模制树脂密封的连接部分1b具有孔。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2010109173A Optical transmitter-receiver, optical transmitter and optical receiver 审中-公开
标题翻译：光发射机 - 光接收机，光发射机和光接收机
公开(公告)号：JP2010109173A
公开(公告)日：2010-05-13
申请号：JP2008280092
申请日：2008-10-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAKI HIROYUKI , SENOO KENJI , KATAYAMA MASATOSHI , ISHITOBI SATOSHI
IPC分类号： H01S5/022 , G02B6/42 , H01L31/0232
摘要： PROBLEM TO BE SOLVED: To obtain an optical transmitter-receiver, an optical transmitter, and an optical receiver in which degradation in wiggle characteristics and degradation in reliability of a glass sealing part caused by the occurrence of optical axis misalignment are prevented by suppressing the occurrence of optical axis misalignment between a receptacle and an optical fiber.
SOLUTION: The optical transmitter-receiver includes: a flexible substrate 7 electrically connecting an optical signal transmission part 1 and an optical signal reception part 2 to a glass-epoxy substrate 9; and a receptacle 4 which is fixed to a BIDI module 6 and connects an optical fiber 3 and an optical filter 10. A housing 5 holds a connection part between the receptacle 4 and the optical fiber 10, and the connection part is supported on the glass-epoxy substrate 9 so as to be freely inclined.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得由于光轴未对准而引起的玻璃密封部分的摆动特性劣化和可靠性降低的光收发器，光发射器和光接收器，由抑制插座与光纤之间的光轴未对准的发生。光发射机 - 接收机包括：将光信号传输部分1和光信号接收部分2电连接到玻璃环氧基板9的柔性基板7; 以及固定到BIDI模块6并连接光纤3和滤光器10的插座4.壳体5保持插座4和光纤10之间的连接部分，并且连接部分被支撑在玻璃环氧基板9以便自由倾斜。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2005109100A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005109100A
公开(公告)日：2005-04-21
申请号：JP2003339730
申请日：2003-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , FUNAKOSHI NOBUHITO , OZAKI HIROYUKI , TADA KAZUHIRO
IPC分类号： H01L23/29 , H01L21/56 , H01L23/28 , H01L23/36 , H01L23/433 , H01L23/495 , H01L23/50
CPC分类号： H01L21/565 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49113 , H01L2924/00014 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power in which the heat radiation characteristic is superior, insulating properties are high, and further a miniaturization is possible.
SOLUTION: The semiconductor device composed of a resin-molded chip, contains a frame which comprises a front and rear surface and includes a die pad; a power chip mounted on the surface of the die pad; an insulating resin sheet which comprises a first surface and a second surface which face each other, and in which the rear surface of the die pad is disposed so as to come into contact with its first surface; and a molded resin formed on the first surface of the resin sheet so as to encapsulate the power chip. The heat conductivity of the resin sheet is greater than that of the molded resin.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供散热特性优良的绝缘性能高的电力半导体装置，进一步小型化是可能的。解决方案：由树脂模制芯片组成的半导体器件包括一个包括前表面和后表面并且包括管芯焊盘的框架; 功率芯片安装在芯片焊盘的表面上; 绝缘树脂片，其包括彼此面对的第一表面和第二表面，并且其中芯片垫的后表面设置成与其第一表面接触; 以及形成在树脂片的第一表面上以封装功率芯片的模制树脂。树脂片的导热率大于模塑树脂的导热率。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004343657A Optical transmitter and its fixed bias current determination method 有权
公开(公告)号：JP2004343657A
公开(公告)日：2004-12-02
申请号：JP2003140827
申请日：2003-05-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAKI HIROYUKI
IPC分类号： H01S5/042 , H04B10/2507 , H04B10/40 , H04B10/50 , H04B10/524 , H04B10/54 , H04B10/60 , H04B10/04 , H04B10/06 , H04B10/14 , H04B10/26 , H04B10/28
摘要： PROBLEM TO BE SOLVED: To obtain an optical transmitter of which the number of components are reduced and which generates optical output waveform satisfying pulse mask specification and extinction ratio specification from a laser diode.
SOLUTION: A modulation current driving circuit 2 provides modulation current Imod according to a digital signal inputted from a data input terminal 1 to the laser diode 3. A bias current source 4 provides predetermined optimal fixed bias current Ib satisfying pulse mask specification and extinction ratio specification to the laser diode 3 to manufacturing variation of the laser diode 3. A temperature compensation device 5 detects ambient temperature of the laser diode 3, performs temperature compensation of the modulation current Imod to be provided from the modulation current driving circuit 2 so that the extinction ratio of the laser diode 3 becomes constant even when the ambient temperature changes and performs the temperature compensation of the fixed bias current Ib to be provided from the bias current source 4.
COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2012165177A Optical transmitter adjustment method and optical transmitter 审中-公开
标题翻译：光发射机调整方法和光发射机
公开(公告)号：JP2012165177A
公开(公告)日：2012-08-30
申请号：JP2011023888
申请日：2011-02-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAKI HIROYUKI
IPC分类号： H04B10/40 , H01S5/0683 , H04B10/07 , H04B10/272 , H04B10/50 , H04B10/564 , H04B10/60
摘要： PROBLEM TO BE SOLVED: To obtain an optical transmitter adjustment method capable of facilitating adjustment and reducing a cost.SOLUTION: The high-level and low-level optical outputs of a laser diode are performed by the combination of a pre-bias signal, a burst gate signal, and a continuous mode signal. The optical levels of the optical outputs are measured thereby performing adjustment to allow the optical output power of the laser diode and an extinction ratio characteristic to be within the range of predetermined standard, based on the measurement values (steps ST2-ST4). The values of adjusted modulation current and bias current are defined as the setting values of a modulation current driving circuit and a bias current source (step ST5).
摘要翻译：要解决的问题：获得能够促进调整和降低成本的光发射机调节方法。
解决方案：激光二极管的高电平和低电平光输出通过预偏置信号，脉冲串门信号和连续模式信号的组合来执行。测量光输出的光学电平，从而基于测量值进行调整以允许激光二极管的光输出功率和消光比特性在预定标准的范围内（步骤ST2-ST4）。调整后的调制电流和偏置电流的值被定义为调制电流驱动电路和偏置电流源的设定值（步骤ST5）。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011170026A Optical filter, method of manufacturing the same and method of designing the same 有权
标题翻译：光学滤波器，其制造方法及其设计方法
公开(公告)号：JP2011170026A
公开(公告)日：2011-09-01
申请号：JP2010032351
申请日：2010-02-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKABAYASHI MASAKAZU , NISHIKAWA TOMOSHI , YAGYU EIJI , OZAKI HIROYUKI , KATAYAMA MASATOSHI
IPC分类号： G02B6/02
摘要： PROBLEM TO BE SOLVED: To suppress generation of Bragg-reflected beams, even if the shielding performance of light is enhanced by increasing the variation in the refractive index of a core in an optical filter constituted of a tilt grating. SOLUTION: The tilt angle θ of the tilt grating 3 in the optical filter 100 is such that the Bragg-reflected quantity of the optical filter 100 becomes a minimum, in comparison to the Bragg-reflected quantities of other optical filters which is provided with a core on which the tilt grating is formed under a second exposure condition in which only the exposure quantity of ultraviolet light is increased and which is reduced, with reference to a first exposure condition adopted for forming the tilt grating 3 in the optical filter 100. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：即使通过增加由倾斜光栅构成的滤光器中的芯的折射率的变化来提高光的屏蔽性能，抑制布拉格反射光束的产生。解决方案：与滤波器100的其他滤光器的布拉格反射量相比，滤光器100中的倾斜光栅3的倾斜角θ与滤光器100的布拉格反射量成为最小，在其中仅在紫外线的曝光量增加并且减少的第二曝光条件下形成倾斜光栅的核心，参考在滤光器中形成倾斜光栅3所采用的第一曝光条件 100.版权所有（C）2011，JPO＆INPIT

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