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1. 发明专利

JP2014099523A Heterojunction field effect transistor and manufacturing thereof 审中-公开
标题翻译：异相场效应晶体管及其制造
公开(公告)号：JP2014099523A
公开(公告)日：2014-05-29
申请号：JP2012250894
申请日：2012-11-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUITA MUNEYOSHI , NANJO TAKUMA , SUZUKI YOSUKE , IMAI AKIFUMI , OKAZAKI HIROYUKI
IPC分类号： H01L29/812 , H01L21/205 , H01L21/338 , H01L29/778
摘要： PROBLEM TO BE SOLVED: To provide a heterojunction field effect transistor and a manufacturing method thereof capable of maintaining a two-dimensional electron gas concentration immediately beneath a gate electrode and also capable of improving breakdown voltage.SOLUTION: The heterojunction field effect transistor comprises: a second nitride semiconductor layer 3 formed on a semi-insulating substrate 1 by penetrating a first nitride semiconductor layer 2; a gate electrode 8 formed in a prescribed region on a fourth nitride semiconductor layer 5; and a source electrode 6 and a drain electrode 7 formed on one side and the other side of the gate electrode 8, respectively. The second nitride semiconductor layer 3 is formed beneath a region between the gate electrode 8 and the drain electrode 7 plus a prescribed region including at least a portion beneath a region of an edge 12 on the drain electrode 7 side of the gate electrode 8, its band-gap energy being larger than the band-gap energy of the first nitride semiconductor layer 2 and of the third nitride semiconductor layer 4.
摘要翻译：要解决的问题：提供一种异质结场效应晶体管及其制造方法，其能够将二维电子气体浓度保持在栅电极正下方，并且还能够提高击穿电压。解决方案：异质结场效应晶体管包括：通过穿透第一氮化物半导体层2在半绝缘基板1上形成的第二氮化物半导体层3; 形成在第四氮化物半导体层5上的规定区域中的栅电极8; 以及分别形成在栅电极8的一侧和另一侧的源电极6和漏电极7。第二氮化物半导体层3形成在栅电极8和漏极电极7之间的区域的下方，加上在栅电极8的漏电极7侧的边缘12的至少一部分以下的规定区域，带隙能量大于第一氮化物半导体层2和第三氮化物半导体层4的带隙能量。

2. 发明专利

JP2013225621A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013225621A
公开(公告)日：2013-10-31
申请号：JP2012097892
申请日：2012-04-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUZUKI YOSUKE , ABE YUJI , SUITA MUNEYOSHI , NANJO TAKUMA , IMAI AKIFUMI , YAGYU EIJI
IPC分类号： H01L21/338 , H01L21/336 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device having hetero junction of excellent characteristics, which supports high breakdown voltage and high current at the same time.SOLUTION: A semiconductor device comprises: an electron transit layer 3 which has a 2DEG (two dimensional electron gas) and composed of GaN; an electron supply layer 4 which is provided on the electron transit layer 3 and composed of AlGaN for supplying electrons to the 2DEG; a first cap layer 5 composed of an undoped semiconductor, which has an opening provided on the electron supply layer 4 and opening so as to surround a gate electrode 11; and a second cap layer 6 composed on an n-type semiconductor, which is provided only on the first cap layer 5 and which has an opening opening at least on a downstream side than the gate electrode in an electron transition direction of the 2DEG and having an opening width wider than that of the opening of the first cap layer 5.
摘要翻译：要解决的问题：获得具有优异特性的异质结的半导体器件，其同时支持高击穿电压和高电流。解决方案：一种半导体器件包括：电子转移层3，其具有2DEG（二维电子气体）并由GaN组成; 电子供给层4，设置在电子输送层3上，由用于向2DEG供给电子的AlGaN构成; 由未掺杂半导体构成的第一盖层5，其具有设置在电子供给层4上并且围绕栅电极11开口的开口; 以及第二盖层6，其构造在仅在第一盖层5上并且在2DEG的电子转移方向上至少在栅电极的下游侧具有开口的n型半导体上，并且具有在开口宽度比第一盖层5的开口宽。

3. 发明专利

JP2012114242A Heterojunction field effect transistor and method of manufacturing the same 审中-公开
标题翻译：异相场效应晶体管及其制造方法
公开(公告)号：JP2012114242A
公开(公告)日：2012-06-14
申请号：JP2010262000
申请日：2010-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IMAI AKIFUMI , NANJO TAKUMA , SUITA MUNEYOSHI , SHIOZAWA KATSUOMI , SUZUKI YOSUKE , YAGYU EIJI , ABE YUJI
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a heterojunction field effect transistor which minimizes current collapse and reduces gate leak current, and to provide a method of manufacturing the same.SOLUTION: The heterojunction field effect transistor comprises a nitride semiconductor layer including a barrier layer 4 and a cap layer 5 formed thereon, a gate electrode 10 provided on the nitride semiconductor layer so that the lower part is buried therein, and a drain electrode 8 and a source electrode 9 provided, respectively, on both sides of the gate electrode 10 with a space between one other. At least the drain electrode 8 side end face, out of the drain electrode 8 side end face and the source electrode 9 side end face, of the gate electrode 10 is separated from the cap layer 5 at least partially, and the separated part is a gap.
摘要翻译：要解决的问题：提供一种异质结场效应晶体管，其使电流崩溃最小化并减小栅极泄漏电流，并提供其制造方法。解决方案：异质结场效应晶体管包括氮化物半导体层，其包括形成在其上的阻挡层4和覆盖层5，栅极电极10设置在氮化物半导体层上，使得下部埋入其中，漏极电极8和源电极9分别设置在栅电极10的两侧彼此之间的空间。栅电极10的漏电极8侧端面和源电极9侧端面中的至少漏电极8侧端面至少部分地与盖层5分离，分离部分为间隙。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011054809A Nitride semiconductor device, and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2011054809A
公开(公告)日：2011-03-17
申请号：JP2009203227
申请日：2009-09-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIOZAWA KATSUOMI , ABE YUJI , FUKITA MUNEYOSHI , NANJO TAKUMA , IMAI AKIFUMI , YAGYU EIJI
IPC分类号： H01L29/812 , H01L21/225 , H01L21/338 , H01L29/778
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of high-speed operation by reducing access resistance while keeping breakdown-voltage characteristics, and to provide a method of manufacturing the same.
SOLUTION: The heterojunction field-effect semiconductor device using a nitride semiconductor includes: a channel layer 3 and a barrier layer 4 formed by being sequentially laminated on a substrate 1; and a source electrode 5 and a drain electrode 6 formed separately from each other on the barrier layer 4, wherein impurity diffusion regions 22 are formed by performing impurity diffusion to a region below each of the source electrode 5 and the drain electrode 6 and from the front surface of the barrier layer 4 to at least a portion of the channel layer 3, and a bandgap is changed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过在保持击穿电压特性的同时降低访问电阻而能够进行高速操作的氮化物半导体器件，并提供其制造方法。解决方案：使用氮化物半导体的异质结场效应半导体器件包括：沟道层3和通过依次层压在衬底1上形成的势垒层4; 以及在阻挡层4上彼此分开形成的源极电极5和漏极电极6，其中通过对源极电极5和漏电极6之下的区域进行杂质扩散，从而形成杂质扩散区域22 阻挡层4的前表面到沟道层3的至少一部分，并且带隙改变。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010123785A Nitride semiconductor device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2010123785A
公开(公告)日：2010-06-03
申请号：JP2008296619
申请日：2008-11-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KANEMOTO KYOZO , SHIOZAWA KATSUOMI , OISHI TOSHIYUKI , NANJO TAKUMA , TOKUDA YASUKI
IPC分类号： H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that suppresses complicated processes and a drop of yield and has adhesion strength enough to prevent the peeling of electrodes, and to provide the manufacturing method thereof. SOLUTION: The nitride semiconductor device includes: a first conductive type semiconductor layer 1 having a ridge 2 on its surface; an insulation film 3 that is stacked on the semiconductor layer 1 to cover at least digging bottoms on both sides of the ridge 2; and an electrode 5 that is continuously formed on the upper surface of the ridge 2 and the surface of the insulation film 3. The insulation film includes a roughened surface 4 wherein a concave and convex section is formed by roughening. The manufacturing method thereof includes; (a) a step to form the ridge 2 on the surface of the semiconductor layer 1; (b) a step to cover at least digging bottoms on both side of the ridge 2 with the insulation film 3; (c) a step to form the roughened surface 4 on the surface of the insulation film 3; and (d) a step to continuously form the electrode 5 on the upper surface of the ridge 2 and the surface of the insulation film 3. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抑制复杂工艺和产量下降的氮化物半导体器件，并具有足以防止电极剥离的粘合强度，并提供其制造方法。解决方案：氮化物半导体器件包括：在其表面上具有脊2的第一导电类型半导体层1; 堆叠在半导体层1上的绝缘膜3，以至少覆盖脊2的两侧的挖坑底部; 以及连续地形成在脊2的上表面和绝缘膜3的表面上的电极5.绝缘膜包括粗糙表面4，其中通过粗糙化形成凹凸部分。其制造方法包括：（a）在半导体层1的表面上形成隆起2的工序; （b）至少用绝缘膜3覆盖脊2的两侧的底部的步骤; （c）在绝缘膜3的表面上形成粗糙表面4的步骤; 和（d）在脊2的上表面和绝缘膜3的表面上连续地形成电极5的步骤。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008053426A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008053426A
公开(公告)日：2008-03-06
申请号：JP2006227735
申请日：2006-08-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NANJO TAKUMA , FUKITA MUNEYOSHI , KANEMOTO KYOZO , OISHI TOSHIYUKI
IPC分类号： H01L21/28 , H01L33/32 , H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a nitride semiconductor layer in which a contact resistance between an electrode formed on an n-type nitride semiconductor layer and the n-type nitride semiconductor layer is lowered, and to provide the semiconductor device such as a high electronic mobility field-effect transistor or the like which is operated by a high voltage and high-frequency wave. SOLUTION: The n-type nitride semiconductor layer, a first metal layer, and a second metal layer are provided in the sequence from a side contacted with the n-type nitride semiconductor layer while impurities in the n-type nitride semiconductor layer are specified so as to be not less than 1×10 19 cm -3 , and the work function of the second metal layer is specified so as to be not more than 4.2 eV. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有氮化物半导体层的半导体器件，其中形成在n型氮化物半导体层上的电极与n型氮化物半导体层之间的接触电阻降低，并且提供半导体装置，例如通过高电压和高频波操作的高电子迁移率场效应晶体管等。解决方案：n型氮化物半导体层，第一金属层和第二金属层以与n型氮化物半导体层接触的一侧的顺序提供，而n型氮化物半导体层中的杂质被指定为不小于1×10 19 cm -3 ，并且将第二金属层的功函数规定为不大于4.2 电子伏特。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007103778A Field effect transistor 审中-公开
标题翻译：场效应晶体管
公开(公告)号：JP2007103778A
公开(公告)日：2007-04-19
申请号：JP2005293627
申请日：2005-10-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OISHI TOSHIYUKI , NANJO TAKUMA , FUKITA MUNEYOSHI , ABE YUJI
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a field effect transistor of which a gate leakage current is restrained low. SOLUTION: The field effect transistor has a channel layer, semiconductor an Al X Ga 1-X N (0 Y Ga 1-Y N (X X Ga 1-X N (0 Z Ga 1-Z N (0≤Z X Ga 1-X N electron supply layer. In the second cap layer, polarization and a band gap are smaller than those of the first one. As a result, an effective Schottky barrier is high in the gate electrode, and hence the gate leakage current is restrained low. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供抑制栅极泄漏电流低的场效应晶体管。解决方案：场效应晶体管具有沟道层，半导体衬底上的Al X Ga 1-X N（0 X'的第一盖层，其包含Al Y Ga 1-Y N（X Ga 1-X N（0 Z <1> Z X Ga 1-X N电子供应层的那些。在第二盖层中，极化和带隙比第一盖小。结果，栅电极中的有效肖特基势垒高，因此栅极漏电流被抑制为低。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007059448A Hetero-junction field effect transistor and its manufacturing method 审中-公开
标题翻译：异源场效应晶体管及其制造方法
公开(公告)号：JP2007059448A
公开(公告)日：2007-03-08
申请号：JP2005239727
申请日：2005-08-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NANJO TAKUMA , OISHI TOSHIYUKI , FUKITA MUNEYOSHI , ABE YUJI
IPC分类号： H01L21/338 , H01L21/28 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a hetero-junction field effect transistor such as a hetero-junction field effect transistor constituted of a semiconductor containing nitride, capable of suppressing gate leakage current and alleviating current collapse. SOLUTION: The hetero-junction field effect transistor has an Al layer 8 formed on a barrier layer 4, and further has a gate electrode 9 formed on the Al layer 8. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制栅极漏电流并减轻电流崩溃的异质结场效应晶体管，例如由包含氮化物的半导体构成的异质结场效应晶体管。解耦：异质结场效应晶体管具有形成在阻挡层4上的Al层8，并且还具有在Al层8上形成的栅极9.版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006237056A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006237056A
公开(公告)日：2006-09-07
申请号：JP2005045367
申请日：2005-02-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NANJO TAKUMA , OISHI TOSHIYUKI , FUKITA MUNEYOSHI , ABE YUJI
IPC分类号： H01L21/301 , H01L21/3205 , H01L21/338 , H01L23/52 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having more semiconductor chips per unit substrate. SOLUTION: In this method of manufacturing a semiconductor device, a mask 7 is formed so that a portion 1h to be cut is exposed on a main surface S1 of the semiconductor device 1, and the portion 1h is cut by etching on the basis of the mask 7, thereby dividing the semiconductor device 1 into separate semiconductor chips. COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2015008244A ヘテロ接合電界効果型トランジスタおよびその製造方法审中-公开
标题翻译：异相场效应晶体管及其制造方法
公开(公告)号：JP2015008244A
公开(公告)日：2015-01-15
申请号：JP2013133361
申请日：2013-06-26
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： IMAI AKIFUMI , NANJO TAKUMA , SUZUKI YOSUKE , SUITA MUNEYOSHI , OKAZAKI HIROYUKI , YAGYU EIJI
IPC分类号： H01L21/338 , H01L21/336 , H01L29/778 , H01L29/78 , H01L29/812
摘要：【課題】本発明は、電気特性の変動を抑制するとともにアクセス領域の抵抗を低減することが可能なヘテロ接合電界効果型トランジスタおよびその製造方法を提供することを目的とする。【解決手段】本発明によるヘテロ接合電界効果型トランジスタは、窒化物半導体からなるヘテロ接合電界効果型トランジスタであって、半絶縁性SiC基板1上に形成されたチャネル層3と、チャネル層3上に形成された第1の電子供給層4と、第1の電子供給層4上の予め定められた領域に形成されたゲート電極10と、第1の電子供給層4上であって、ゲート電極10の一方側と他方側とに各々形成されたソース電極8およびドレイン電極9と、第1の電子供給層4上であって、ゲート電極10、ソース電極8、およびドレイン電極9が形成された領域以外の領域に、ソース電極8およびドレイン電極9と接さず、かつ第1の電子供給層4と接するように形成された第2の電子供給層5とを備える。【選択図】図1
摘要翻译：要解决的问题：提供能够抑制电特性的变化和降低接入区的电阻的异质结场效应晶体管，并提供其制造方法。解决方案：一种异质结场效应晶体管，其由氮化物半导体，包括：形成在半绝缘SiC衬底1上的沟道层3; 形成在沟道层3上的第一电子供给层4; 形成在第一电子供给层4上的预定区域中的栅极电极10; 分别形成在第一电子供给层4上的栅电极10的一侧和另一侧的源电极8和漏电极9; 以及第二电子供给层5，形成在除了形成栅电极10，源电极8和漏电极9的区域以外的区域中，以便不与源电极8和漏电极9接触，以及以在第一电子供给层4上与第一电子供给层4接触。

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