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1. 发明专利

JP2008252284A High frequency receiver 有权
标题翻译：高频接收机
公开(公告)号：JP2008252284A
公开(公告)日：2008-10-16
申请号：JP2007088521
申请日：2007-03-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA KENSUKE , SHIMOZAWA MITSUHIRO , SUEMATSU KENJI
IPC分类号： H03D7/14 , H04B1/26
摘要： PROBLEM TO BE SOLVED: To reduce a circuit area, to eliminate the influence of a DC cut capacitor on frequency characteristics, and to provide sufficient gain and saturation characteristics. SOLUTION: The high frequency receiver includes: a mixing circuit 4 directly DC-connected in parallel with load resistors 3a and 3b, for mixing first and second LO signals and first and second RF amplified by a differential variable gain low noise amplifier 2 and down-converting the first and second RF signals to first and second BB signals; and a current value setting circuit 10 constituting a current mirror with respect to the mixing circuit 4 and the load resistors 3a and 3b and for setting the value of a current flowing through the mixing circuit 4. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少电路面积，消除直流截止电容器对频率特性的影响，并提供足够的增益和饱和特性。解决方案：高频接收机包括：与负载电阻3a和3b并联直接并联的混合电路4，用于混合第一和第二LO信号，以及由差分可变增益低噪声放大器2放大的第一和第二RF 以及将所述第一和第二RF信号下变频为第一和第二BB信号; 以及电流值设定电路10，其构成相对于混合电路4和负载电阻3a，3b的电流镜，并设定流过混合电路4的电流值。（C）2009， JPO＆INPIT

2. 发明专利

JP2008219081A Balun 有权
标题翻译： BALUN
公开(公告)号：JP2008219081A
公开(公告)日：2008-09-18
申请号：JP2007049366
申请日：2007-02-28
申请人： Mitsubishi Electric Corp , Tohoku Univ , 三菱電機株式会社 , 国立大学法人東北大学
发明人： TSUBOUCHI KAZUO , TAKAGI SUNAO , NAKASE HIROYUKI , KAMEDA TAKU , ISODA YOJI , NAKAJIMA KENSUKE
IPC分类号： H01P5/10 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To reduce size, and improve performance, such as broadband performance. SOLUTION: A first wiring pattern 200 comprises terminals A, C and a first C-shaped line pattern 2 connecting the terminals A, C. A second wiring pattern 300 comprises terminals D, F and a second C-shaped line pattern 3 connecting the terminals D, F. The first and second line patterns 2, 3 are laminated via a planar dielectric 1 so that openings do not overlap while being shifted each other by 180°. The terminals A, C are connected to a first transmission line 4, and the terminals D, F are connected to second and third transmission lines 6, 7, respectively. Nearly the center section of the first line pattern 2 is electrically connected to a ground conductor 5 of the second and third transmission lines 6, 7 by a connection circuit 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：减小大小，提高性能，如宽带性能。解决方案：第一布线图案200包括端子A，C和连接端子A，C的第一C形线图案2.第二布线图案300包括端子D，F和第二C形线图案3 连接端子D，F。第一线图案2,3和第二线图案3通过平面电介质1层叠，使得开口不重叠，同时彼此偏移180°。端子A，C连接到第一传输线4，端子D，F分别连接到第二和第三传输线6,7。第一线路图形2的几乎中心部分通过连接电路8电连接到第二和第三传输线6,7的接地导体5.版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006094196A Multi-stage high frequency amplifier 有权
标题翻译：多级高频放大器
公开(公告)号：JP2006094196A
公开(公告)日：2006-04-06
申请号：JP2004277836
申请日：2004-09-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA KENSUKE , SUEMATSU KENJI , TSUTSUMI TSUNEJI , SUGANO TAKAYUKI
IPC分类号： H03F3/19 , H03F3/45
摘要： PROBLEM TO BE SOLVED: To obtain a multi-stage high frequency amplifier capable of maintaining stable operations of high frequency amplifiers on respective stages, reducing a circuit occupancy area and reducing the man-hour of connection with an external circuit.
SOLUTION: The multi-stage high frequency amplifier configured by connecting, on multiple stages, amplifiers each including amplification transistors (4a, 4b) for amplifying high frequency signals and load resistors (5a, 5b) of which one terminal is connected to a collector or a drain of the amplification transistor, includes: isolation resistors (6a, 6b), individual for each stage, connected to other terminals of the load resistors on the respective stages; bypass capacitors (7a, 7b), individual for each stage, connected to the other terminals of the load resistors on the respective stages in parallel with the isolation resistors; a common power supply terminal (9) to which the isolation resistors individual for the respective stages are connected in common, for supplying a bias power source; and a ground terminal (8) for grounding the bypass capacitors individual for the respective stages.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得能够保持各级的高频放大器的稳定运行的多级高频放大器，减少了电路占有面积并减少了与外部电路的连接工作时间。解决方案：多级高频放大器通过在多级上连接放大器，每个放大器包括用于放大高频信号的放大晶体管（4a，4b）和一个端子连接到其的负载电阻器（5a，5b）所述放大晶体管的集电极或漏极包括：隔离电阻器（6a，6b），其各自独立于各个级的负载电阻器的其它端子; 旁路电容器（7a，7b），各个级别，与隔离电阻并联连接到各级的负载电阻器的其他端子; 用于各级共用的隔离电阻器共同连接的公共电源端子（9）用于供给偏置电源; 以及接地端子（8），用于将各个旁路的旁路电容器接地。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005323016A Voltage-controlled oscillator 有权
标题翻译：电压控制振荡器
公开(公告)号：JP2005323016A
公开(公告)日：2005-11-17
申请号：JP2004137992
申请日：2004-05-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TSUTSUMI TSUNEJI , NAKAJIMA KENSUKE , SUGANO TAKAYUKI , SUEMATSU KENJI
IPC分类号： H03B5/08 , H03B5/12
摘要： PROBLEM TO BE SOLVED: To make the current consumption of a voltage-controlled oscillator low and its circuit simple, and to obtain a wide-band voltage-controlled oscillator.
SOLUTION: The voltage-controlled oscillator includes a feedback path circuit which adjusts the passing phase and resonance frequency of a feedback path of a transistor for oscillation by making the bias voltage of a varactor diode variable. In addition to the feedback path circuit, the voltage-controlled oscillator includes a resonance circuit which adjusts the resonance frequency by making the bias voltage of the varactor diode variable, and the oscillation frequency of the voltage-controlled oscillator is varied over a wide band by using the feedback path circuit and resonance circuit in combination.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了使压控振荡器的电流消耗低，其电路简单，并获得宽带压控振荡器。解决方案：压控振荡器包括反馈路径电路，其通过使变容二极管的偏置电压变化来调节用于振荡的晶体管的反馈路径的通过相位和谐振频率。除了反馈路径电路之外，压控振荡器还包括谐振电路，其通过使变容二极管的偏置电压变化来调节谐振频率，并且压控振荡器的振荡频率在宽带上变化，使用反馈路径电路和谐振电路组合。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2009021944A Image rejection mixer, quadrature mixer and receiver 审中-公开
标题翻译：图像抑制混合器，平台混合器和接收器
公开(公告)号：JP2009021944A
公开(公告)日：2009-01-29
申请号：JP2007184617
申请日：2007-07-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMOZAWA MITSUHIRO , KANAZAWA SATOSHI , UEDA HIROTAMI , NAKAJIMA KENSUKE , SUEMATSU KENJI
IPC分类号： H03D7/18 , H03D7/14 , H04B1/26
摘要： PROBLEM TO BE SOLVED: To remove an image signal without mounting an in-phase distributor for LO wave distribution.
SOLUTION: An image rejection mixer is disclosed which is equipped with: a 90° hybrid 3 for distributing an RF signal and an LO wave into signals of phases different at 90°; a first higher harmonic mixer 4 for mixing one-side distributed RF signal and LO wave to output an IF signal; a phase shifting line 5 for changing phases of other-side distributed RF signal and LO wave; and a second higher harmonic wave mixer 6 for mixing the other-side phase-changed RF signal and LO wave to output an IF signal, wherein a 90° hybrid 7 synthesizes the IF signal output from the first higher harmonic wave mixer 4 with the IF signal output from the second higher harmonic wave mixer 6.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：去除图像信号而不安装用于LO波分布的同相分配器。解决方案：公开了一种镜像抑制混频器，其配备有：90°混合3，用于将RF信号和LO波分配到不同于90°的相位的信号中; 用于混合单侧分布式RF信号和LO波的第一高次谐波混合器4以输出IF信号; 用于改变另一侧分布式RF信号和LO波的相位的相移线5; 以及用于混合另一侧相变RF信号和LO波以输出IF信号的第二高次谐波混频器6，其中90°混合器7将从第一高次谐波混频器4输出的IF信号与IF 信号输出来自第二高次谐波混频器6.版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007028399A 90° distributor and high frequency circuit 有权
标题翻译： 90°分配器和高频电路
公开(公告)号：JP2007028399A
公开(公告)日：2007-02-01
申请号：JP2005210061
申请日：2005-07-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAGEYAMA CHIEMI , SUEMATSU KENJI , NAKAJIMA KENSUKE , TSUTSUMI TSUNEJI
IPC分类号： H03H11/22
摘要： PROBLEM TO BE SOLVED: To provide a 90° distributor and a high frequency circuit to which a wide band and high phase precision are required.
SOLUTION: A 90° distributor comprises a two-phase input and four-phase output frequency divider 11 and a four-phase input and four-phase output polyphase filter 12 which inputs a four-phase outputted from the frequency divider 11. By using the frequency divider 11 on a pre-stage, a wide band is achieved and by providing the four-phase input and four-phase output PPF 12 on a post-stage of the frequency divider 11 so as to fetch the four-phase output of the frequency divider 11 and correcting a distribution/phase error, high-phase precision is achieved together with the correction.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供需要宽带和高相位精度的90°分配器和高频电路。解决方案：90°分配器包括输入从分频器11输出的四相的两相输入和四相输出分频器11以及四相输入和四相输出多相滤波器12。通过在前级上使用分频器11，实现宽频带，并通过在分频器11的后级上提供四相输入和四相输出PPF 12，以便获取四相分频器11的输出和校正分配/相位误差，与校正一起实现高相位精度。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006279526A High-frequency communication equipment 有权
标题翻译：高频通信设备
公开(公告)号：JP2006279526A
公开(公告)日：2006-10-12
申请号：JP2005095502
申请日：2005-03-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA KENSUKE , OSHIMA TAKESHI , SUEMATSU KENJI , OTSUKA MASATAKA , YOSHIDA YUKIHISA , NISHINO TAMOTSU
IPC分类号： H04B1/40 , H01L21/822 , H01L27/04 , H01Q1/38 , H01Q9/16
摘要： PROBLEM TO BE SOLVED: To obtain high-frequency communication equipment capable of feeding a high-frequency signal to a dipole antenna without packaging a grounding means, such as a via hole, onto a semiconductor substrate. SOLUTION: A differential amplifier 3 is formed on the same semiconductor substrate 1 as antenna element patterns 2a, 2b of a dipole antenna. The differential amplifier 3 amplifies a differential signal when the differential signal that is a transmission signal is inputted, and feeds the amplified differential signal to the antenna element patterns 2a, 2b of the dipole antenna. Or, a differential amplifier 10 is formed on the same semiconductor substrate 1 as the antenna element patterns 2a, 2b of the dipole antenna. The differential amplifier 10 amplifies a differential signal for outputting to I/O terminals 5a, 5b when the differential signal that is a reception signal is inputted from the antenna element patterns 2a, 2b of the dipole antenna. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了获得能够将高频信号馈送到偶极天线而不将诸如通孔的接地装置封装在半导体衬底上的高频通信设备。解决方案：差分放大器3形成在与偶极天线的天线元件图案2a，2b相同的半导体衬底1上。当输入作为发送信号的差分信号时，差分放大器3放大差分信号，并将经放大的差分信号馈送到偶极天线的天线元件图案2a，2b。或者，差分放大器10形成在与偶极天线的天线元件图案2a，2b相同的半导体衬底1上。当从偶极天线的天线元件图案2a，2b输入作为接收信号的差分信号时，差分放大器10放大用于输出到I / O端子5a，5b的差分信号。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006081073A Transmitting/receiving circuit 审中-公开
标题翻译：发射/接收电路
公开(公告)号：JP2006081073A
公开(公告)日：2006-03-23
申请号：JP2004265275
申请日：2004-09-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINJO SHINTARO , SUGANO TAKAYUKI , TSUTSUMI TSUNEJI , NAKAJIMA KENSUKE , SUEMATSU KENJI , TAKAGI SUNAO
IPC分类号： H04B1/44
摘要： PROBLEM TO BE SOLVED: To obtain a transmitting/receiving circuit enabling a high output at the time of the transmission and miniaturization of the circuit.
SOLUTION: Between a transmitting circuit 21 and a receiving circuit 23 in the transmitting/receiving circuit, a high-frequency input/output terminal 22 is provided for outputting a transmitting signal and inputting a receiving signal. The transmitting/receiving circuit has a function for separating transmission by the transmitting circuit 21 from reception by the receiving circuit 23. A single-pole single-throw switch 28 is loaded on a high-frequency signal line connecting the high-frequency input/output terminal 22 and the receiving circuit 23. Transmission and reception are switched by turning the single-pole single-throw switch 28 on and off.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：获得在电路传输时能够实现高输出并且使电路小型化的发送/接收电路。解决方案：在发送/接收电路中的发送电路21和接收电路23之间，提供高频输入/输出端22用于输出发送信号并输入接收信号。发送/接收电路具有通过发送电路21将接收电路23接收的发送分离的功能。单极单掷开关28被加载在连接高频输入/输出的高频信号线上端子22和接收电路23.通过打开和关闭单极单掷开关28来切换发送和接收。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2011097638A Variable gain amplifier 审中-公开
标题翻译：可变增益放大器
公开(公告)号：JP2011097638A
公开(公告)日：2011-05-12
申请号：JP2011005854
申请日：2011-01-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： UEDA HIROTAMI , MORI KAZUTOMI , NAKAJIMA KENSUKE , SUEMATSU KENJI
IPC分类号： H03G3/10 , H03F1/22
摘要： PROBLEM TO BE SOLVED: To provide a variable gain amplifier capable of suppressing variation in the output impedance when its gain is changed. SOLUTION: A variable gain amplifier includes: a source-grounded amplification element 3 whose gate is connected to an input terminal, a gate bias being supplied to the gate, for amplifying an input signal; a ladder resistor circuit 61 having a plurality of parallel resistors 63 to which a drain bias is applied from one terminal, and a plurality of series resistors 62 connecting other terminals of the parallel resistors 63; a plurality of gate-grounded amplification elements 5 1 -5 n whose gates are grounded in a high frequency manner, a gate bias being supplied to the gates, whose drains are connected with other terminals of the parallel resistors in the ladder resistor circuit 61, and whose sources are connected with a drain of the source-grounded amplification element 3; an output terminal 12 connected to a drain of any one of the plurality of gate-grounded amplification elements; and a gate bias control circuit 6 connected with the gates of the plurality of gate-grounded amplification elements for selectively supplying the gate bias. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种当增益改变时能够抑制输出阻抗的变化的可变增益放大器。解决方案：可变增益放大器包括：源极接地放大元件3，其栅极连接到输入端，栅极偏压被提供给栅极，用于放大输入信号; 具有从一个端子施加漏极偏置的多个并联电阻器63的梯形电阻电路61和连接并联电阻器63的其他端子的多个串联电阻器62; 多个栅极接地放大元件5，其栅极以高频方式接地，栅极偏压被提供给栅极，其漏极连接与梯形电阻电路61中的并联电阻器的其他端子连接，源极与源极接地放大元件3的漏极连接; 连接到多个栅极接地放大元件中的任何一个的漏极的输出端子12; 以及栅极偏置控制电路6，其与多个栅极接地放大元件的栅极连接，用于选择性地提供栅极偏置。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2008141474A High-frequency wave transmission line 有权
标题翻译：高频波传输线
公开(公告)号：JP2008141474A
公开(公告)日：2008-06-19
申请号：JP2006325581
申请日：2006-12-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA KENSUKE , TSUTSUMI TSUNEJI , SUEMATSU KENJI
IPC分类号： H01P3/08
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency wave transmission line which can be realized by a silicon semiconductor process, without causing the high-frequency characteristics of a microstrip line to deteriorate. SOLUTION: The high-frequency wave transmission line comprises a metal thin film 20, which is formed on a silicon semiconductor substrate 10 and constitutes a ground conductor in the microstrip line; an insulating film 30 which is formed on the metal thin film 20 and constitutes a substrate in the microstrip line; and a metal thick film 40, formed on the insulation film 30 and constitutes a strip conductor in the microstrip line. The metal thin film 20 has a first slit group 21, consisting of a plurality of slits at the center in the width direction of the metal thick film, having a width corresponding to the width of the strip conductor and immediately underneath the metal thick film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以通过硅半导体工艺实现的高频波传输线，而不会导致微带线的高频特性劣化。解决方案：高频波传输线包括形成在硅半导体衬底10上并构成微带线中的接地导体的金属薄膜20; 绝缘膜30，其形成在金属薄膜20上并构成微带线中的基板; 以及形成在绝缘膜30上并构成微带线中的带状导体的金属厚膜40。金属薄膜20具有由金属厚膜的宽度方向的中央部的多个狭缝构成的第一狭缝组21，其宽度对应于带状导体的宽度，紧接在金属厚膜的下方。版权所有（C）2008，JPO＆INPIT

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