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1. 发明专利

JPS6459750A DEFECT INSPECTION AND CORRECTION DEVICE FOR ELECTRON BEAM PATTERN 失效
公开(公告)号：JPS6459750A
公开(公告)日：1989-03-07
申请号：JP21591687
申请日：1987-08-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , SADAHIRO SHIGEKI
IPC分类号： H01L21/66 , G01B15/00 , G01N23/203 , H01J37/06 , H01J37/28
摘要： PURPOSE:To enable the high-precision inspection of a pattern and the correction of high throughput by controlling the temperature of an inspected sample and exciting a gas for correction via the irradiation of far ultraviolet rays having the predetermined intensity. CONSTITUTION:A sample 27 is compared with a reference pattern formed via a pattern generation part 40 by the irradiation of an electron beam 9, and the defective part thereof is detected and corrected. Far ultraviolet rays generated by a lamp 36 are irradiated upon the sample 27 via a light guide wave passage 35. A sample stage 23 is subjected to a temperature fluctuation via a temperature control part 26 and a stage heating/cooling part 25, and the sample is thereby kept at a temperature adequate for inspection and correction. A gas having specific characteristics is supplied from a gas supply source to the sample 27 via a gas flow controller 33 and excited up to a point immediate before the decomposition reaction thereof, using the irradiation of the far ultraviolet rays. According to the aforesaid system, highprecision inspection and high throughput correction are made with an electron beam.

2. 发明专利

JPS61127148A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61127148A
公开(公告)日：1986-06-14
申请号：JP24778284
申请日：1984-11-22
申请人： Mitsubishi Electric Corp
发明人： SAKAGAMI KIYOSHI , ITAKURA HIDEAKI , SADAHIRO SHIGEKI , CHIBA AKIRA
IPC分类号： H01L21/768 , H01L21/88
摘要： PURPOSE:To prevent the breaking of the second layer wiring by a method wherein the first interlayer insulating film of almost same thickness as a wiring is provided on the wiring, said insulating film is removed by performing an etching wider than the width of the wiring, and the second interlayer insulating film thinner than the wiring is provided, liquid type glass is coated thereon, and a through hole is provided by performing an etching. CONSTITUTION:An insulating film 4 of almost same thickness as the first layer wiring 3 is formed on the wiring 3, and when the insulating film 4, including a through hole forming region, is removed wider than the wiring 3 by performing an etching, the height of the remaining insulating film 4 becomes almost equal to that of the wiring 3. The upper surface of the film 5 is flattened by the presence of space 12 when the second insulating film 5 is stacked, and a trough 51 is generated at the part adjoining to the wiring 3. The second layer wiring 8 is formed by flattening using liquid glass 6 and by providing a through hole 7 at the prescribed position. According to this constitution, the stepping of the through hole part is reduced in the amount of thickness of the first interlayer insulting film 4, thereby enabling to reduce the breaking of the second layer wiring 8.
摘要翻译：目的：为了通过在布线上设置与布线几乎相同厚度的第一层间绝缘膜的方法来防止第二层布线的断裂，通过进行比布线的宽度更宽的蚀刻来去除绝缘膜，并且设置比布线薄的第二层间绝缘膜，在其上涂覆液体型玻璃，并且通过进行蚀刻来提供通孔。构成：在布线3上形成与第一层布线3几乎相同厚度的绝缘膜4，并且当通过进行蚀刻将包括通孔形成区域的绝缘膜4除去比布线3宽的情况下，剩余绝缘膜4的高度几乎与布线3的高度相同。当层叠第二绝缘膜5时，膜5的上表面由于空间12的存在而变平，并且在该部分产生槽51 与布线3相邻。第二层布线8通过使用液体玻璃6进行平坦化并且在规定位置设置通孔7而形成。根据这种结构，通孔部的步进减少了第一层间绝缘膜4的厚度，从而能够减少第二层布线8的断裂。

3. 发明专利

JPS62232145A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS62232145A
公开(公告)日：1987-10-12
申请号：JP7613486
申请日：1986-03-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIHASHI JUNICHI , HIGASHIYA KEIICHI , SADAHIRO SHIGEKI , NISHIMURA TADASHI
IPC分类号： H01L21/3205 , H01L21/268 , H01L21/82 , H01L23/52
摘要： PURPOSE:To make it possible to manufacture a functional element, which has multiple high functions and can function normally as a whole, by selecting one functional circuit block having the normal functions out of each block group, and interconnecting the selected functional circuit blocks on a substrate. CONSTITUTION:Among functional circuit blocks 2, C2, D2, E4, F2, G1 and H2 are connected with interconnecting wires 3. The total interconnected body of the functional circuit blocks becomes a semiconductor integrated circuit, Which operates as one functional element. Namely, e.g., in the interconnection of the functional circuit blocks of C2-D2-E2-F2. G2-H2, the E2 and G2 are assumed to be defective functional blocks, which are not operated normally. At this time, the performances of the functional circuit blocks CI-HI (l=1-4) are tested with a tester beforehand. when the E4 and G1 are normally operating good functional circuit blocks, the interconnection on a substrate 1 is selectively performed with wires 3 by a selective deposition method, so that C2-D2-E4-F 2-G1-H2 are connected. Thus, the desired functions of the interconnection of the functional circuit blocks can be achieved as one functional element.

4. 发明专利

JPS61150337A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61150337A
公开(公告)日：1986-07-09
申请号：JP27560784
申请日：1984-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： SADAHIRO SHIGEKI , CHIBA AKIRA , SAKAGAMI KIYOSHI , ITAKURA HIDEAKI
IPC分类号： H01L21/302
摘要： PURPOSE:To make the resist process needless by effecting the selective etching of the polycrystalline or amorphous thin film by utilizing a difference in etching rate by recrystallizing the desired part of the pattern of said film by laser annealing. CONSTITUTION:A polycrystalline or amorphous thin film 1 is formed on a substrate 3 and a part of this is recrystallized by laser annealing so as to form a minute pattern part 2 whose etching rate is smaller than that of the part not irradiated with a laser. Accordingly when this wafer is etched by use of RIE and etc., the part except the pattern part 2 can be etched selectively without using a particular mask such as of a resist.

5. 发明专利

JPS61119044A Vapor growth method for impurity added silicon oxide film 失效
标题翻译：用于添加氧化硅膜的蒸气生长方法
公开(公告)号：JPS61119044A
公开(公告)日：1986-06-06
申请号：JP24016384
申请日：1984-11-14
申请人： Mitsubishi Electric Corp
发明人： HATANAKA MASAHIRO , ITO HIROMI , MIYAKE KUNIAKI , SADAHIRO SHIGEKI
IPC分类号： H01L21/316
CPC分类号： H01L21/316
摘要： PURPOSE:To prevent the narrow part of silicon oxide film from being formed improving the step difference coating capacity by a method wherein silance, nitrous oxide and phosphine or silane, nitrous oxide and diborane are utilized as growing reaction gas while ultraviolet rays are utilized as reaction exciting energy source. CONSTITUTION:In order to grow a phosphorus added silicon oxide film on a substrate 1 by means of a vapor growing device, the substrate 1 is heated up to 100-500 deg.C by a substrate heater 10 and utilizing silane SiH4, nitrous oxide N2O, phosphine PH3 as reaction gas, a bit of mercury vapor to accelerate photochemical reaction is mixed to lead reaction gas from a reaction gas lead-in hole 5 to the substrate 1. Then reaction gas, memory vapor and sunstrate 1 are irradiated with ultraviolet rays with wave length of 2,537Angstrom from a low pressure mercury lamp 11 through an entrance window 6. At this time, silane and nitrous oxide are reacted to each other by irradiation with violet rays while the photochemical reaction may be accelerated by mercury vapor. Through the photochemical reaction, the phosphorus added silicon oxide film may be grown on the substrate 1.
摘要翻译：目的：为了防止形成氧化硅薄膜的一部分，通过采用紫外线作为反应的方法，其中使用硅氧烷，一氧化二氮和膦或硅烷，一氧化二氮和乙硼烷作为生长反应气体，令人兴奋的能源。构成：为了通过蒸气生长装置在基板1上生长磷添加的氧化硅膜，通过基板加热器10将基板1加热到100-500℃，并使用硅烷SiH4，一氧化二氮N2O ，磷化氢PH3作为反应气体，加入一定程度的水银蒸气促使光化学反应混合，将反应气体从反应气体引入孔5引入基板1.然后用反应气体，记忆蒸气和阳极照射紫外线来自低压汞灯11的波长为2537A，通过入口窗6.此时，硅烷和一氧化二氮通过紫外线照射而相互反应，同时可以通过汞蒸汽加速光化学反应。通过光化学反应，可以在基板1上生长磷添加的氧化硅膜。

6. 发明专利

JPS6358959A FIELD-EFFECT TYPE SEMICONDUCTOR DEVICE WITH CAPACITOR 失效
公开(公告)号：JPS6358959A
公开(公告)日：1988-03-14
申请号：JP20450486
申请日：1986-08-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： SADAHIRO SHIGEKI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/78
摘要： PURPOSE:To secure the capacitor capacity which is necessary and sufficient for a memory action and to keep the high reliability of the action by using silicon oxynitride for a capacitor gate insulating film. CONSTITUTION:A silicon oxynitride film 5 as a capacitor gate insulating film is formed by means of an LPCVD method. The silicon oxynitride film 5 has a property which is intermediate between an oxide film and a nitride film, and its dielectric constant, leakage current, etc., can be arbitrarily changed within the range of the attribute of two types of films if the ratio of the flow rate of a reaction gas is set appropriately. Because the excellent thin-filmed characteristic is realized by making use of the LPCVD method, it is possible to satisfy the required specifications for an individual semiconductor device and to realize an optimum condition to form the capacitor gate insulating film so that the reliability can be improved.

7. 发明专利

JPS61187336A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPS61187336A
公开(公告)日：1986-08-21
申请号：JP2907285
申请日：1985-02-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： CHIBA AKIRA , SAKAGAMI KIYOSHI , ITAKURA HIDEAKI , SADAHIRO SHIGEKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform etching at a uniform etching rate with good reproducibility by a method wherein plasma, which is generated between the opposed electrodes, is confined in a magnetic field, the magnetic field is made to revolve and the plasma is stabilized in the revolving magnetic field. CONSTITUTION:A high-frequency power (high-frequency power source) 3 is applied to an upper electrode 1 and a lower electrode 2, plasma is generated over the whole region between the upper and lower electrodes 1 and 2, a pair of electromagnets only among plural electromagnets (ring-shaped electromagnets) 6 disposed in a ring shape are magnetized the N and S poles to form a bridge consisting of a magnetic field 4 between a pair of the electromagnets, and locally existing plasma 5 is produced. The bridge is made to electrically revolve to the circumferential direction to make the plasma pervade on the whole region of the surface of the upper electrode 1. Then, the electromagnets 6 are made to descend and matters 7 to be treated are exposed to the plasma 5 and are etched. When the intensity of the magnetic field 4 is made larger, the concentration of the plasma 5 in a chamber 8 becomes constant over the whole region between the electrodes 1 and 2. As the plasma is confined in the revolving magnetic field, is made to shift to the lower electrode from the upper electrode, whereon the matters 7 to be treated and placed, and performs an etching on the matters 7 to be treated, the matters to be treated are never etched during the plasma instability. As a result, a uniform etching can be performed on the matters to be treated with good reproducibility.

8. 发明专利

JPS6081842A FORMATION OF WIRING 失效
公开(公告)号：JPS6081842A
公开(公告)日：1985-05-09
申请号：JP19181783
申请日：1983-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA MASAYUKI , NISHIOKA KIYUUSAKU , SADAHIRO SHIGEKI
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/285
摘要： PURPOSE:To obtain highly reliable wiring in a semiconductor integrated circuit device, by forming wiring after burying the wiring material into contact holes by photo CVD. CONSTITUTION:A lower wiring 2 is formed on the substrate 1, and a first insulation layer 3 having low viscosity is adhered thickly thereon. An insulating material is spin-coated thinly to form a second insulation layer 7. Contact holes 8 and 9 are then formed at the required points, and a conductive material is selectively vapor deposited only in the contact holes 8 and 9 by photo CVD to form conductive members 10 and 11. Subsequently, a required pattern of upper wiring 12 is vapor deposited to be formed over the second insulation layer 7. Thus, a wiring positively connected through the contact holes 8 and 9 can be obtained.

9. 发明专利

JPH0573051B2 失效
公开(公告)号：JPH0573051B2
公开(公告)日：1993-10-13
申请号：JP2907285
申请日：1985-02-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： CHIBA AKIRA , SAKAGAMI KYOSHI , ITAKURA HIDEAKI , SADAHIRO SHIGEKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065

10. 发明专利

JPS6358958A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPS6358958A
公开(公告)日：1988-03-14
申请号：JP20451186
申请日：1986-08-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： SADAHIRO SHIGEKI
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108
摘要： PURPOSE:To obtain a MOS dynamic RAM which can reduce the area of a memory cell and can secure large electrostatic capacity by a method wherein a capacitor is structured in multilayered form where a capacitor electrode and a capacitor insulating film are piled up alternately one after another and this multilayered capacitor is formed on e transistor. CONSTITUTION:A multilayered capacitor 201, which is connected with an n type impurity diffusion layer 3b and is composed of a capacitor electrode 10 on the storage node side of a polysilicon film, a capacitor insulating film 60 of a silicon oxide film and a capacitor electrode 70 on the cell plate side of the polysilicon film, is formed on a transistor 100 through an interlayer insulating film 80 of a PSG film. Because the multilayered capacitor 201 is formed on the transistor 100 in this manner, it is possible to reduce the area of a memory cell and to promote the high integration density of a MOS dynamic RAM.

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