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1. 发明专利

JPS60239061A MANUFACTURE OF MOS TRANSISTOR 失效
公开(公告)号：JPS60239061A
公开(公告)日：1985-11-27
申请号：JP9495484
申请日：1984-05-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO , MATSUDA SHIYUUICHI , OKAMOTO TATSUROU
IPC分类号： H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
摘要： PURPOSE:To simplify a heat treatment process by a method wherein a gate electrode is formed to a required surface section in a gate oxide film on an n type Si substrate, a p type ion implantation layer is formed to the main surface section of the Si substrate while using the gate electrode as a mask, and a polycrystalline Si film is shaped on the gate electrode and turned into source-drain layer through heat treatment. CONSTITUTION:A gate oxide film 2 is formed on the main surface of an n type Si substrate 1, and a gate electrode 3a is shaped to a necessary surface section in the oxide film 2. P type ion implantation layers 4a, 4b are formed on both sides of the gate electrode 3a on the main surface section of the substrate 1 through a p type impurity ion implantation method using the gate electrode 3a as a mask. A polycrystalline Si film 9 is shaped on the gate electrode 3a, and the layers 4a, 4b are turned into p type source-drain layers 5a, 5b through heat treatment in an atmospheric atmosphere while the resistance of the electrode 3a is lowered. The surface of the Si film 9 is turned into an SiO2 film 9a, thus preventing the oxidation of the electrode 3a. An insulating film 6, a gate wiring film 7 and source-drain wiring films 8a, 8b are formed, thus obtaining an MOS transistor.

2. 发明专利

JPS60192946A Manufacture of optical mask 失效
标题翻译：光学面膜的制造
公开(公告)号：JPS60192946A
公开(公告)日：1985-10-01
申请号：JP4971084
申请日：1984-03-13
申请人： Mitsubishi Electric Corp
发明人： MATSUDA SHIYUUICHI , KATOU TADAO
IPC分类号： G03C5/00 , G03F1/00 , G03F1/68 , G03F1/80 , G03F7/26 , H01L21/027
CPC分类号： G03F1/50
摘要： PURPOSE:To prevent pinholes and to form a defectless mask by forming a silver halide layer on a Cr film and irradiating light on the side of the Cr film and also through the pinholes on the spots of the silver halide layer. CONSTITUTION:A Cr film 2 is formed on a glass plate 1, then, a silver halide layer 6 is formed on it by coating it with a silver halide soln., and further, a positive resist film 5 is formed on it. When the side of the glass plate 1 is uniformly exposed to light, the light passed through the pinholes reaches the layer 6, and silver is precipitated to block the pinholes 4. The resist layer 5 is imagewise exposed and developed, and the resist film 5 including the layer 6 is removed. Then, the Cr layer 2 is etched, and finally, the remaining layer 5 and the remaining unexposed silver halide layer 6 are removed. The photomask thus formed is baked to flatten the silver halide layer 7.
摘要翻译：目的：通过在Cr膜上形成卤化银层并在Cr膜的侧面照射光，并且还通过卤化银层的斑点上的针孔，来防止针孔和形成无缺陷掩模。构成：在玻璃板1上形成Cr膜2，然后通过用卤化银溶胶涂布形成卤化银层6，并且在其上形成正性抗蚀剂膜5。当玻璃板1的一侧均匀地曝光时，穿过针孔的光到达层6，并且银沉淀以阻挡针孔4.抗蚀剂层5成像曝光和显影，并且抗蚀剂膜5 包括层6被去除。然后，蚀刻Cr层2，最后，除去剩余的层5和剩余的未曝光的卤化银层6。将形成的光掩模烘烤以使卤化银层7平坦化。

3. 发明专利

JPS60154530A RECESSION FORMING PROCESS IN SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS60154530A
公开(公告)日：1985-08-14
申请号：JP1057684
申请日：1984-01-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SHIYUUICHI , OONO YOSHIKAZU , ITAKURA HIDEAKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To form a recession with specified depth without fail by a method wherein an epitaxial layer containing the second impurity different from the first impurity on the surface of a semiconductor substrate is provided with the thickness similar to the specified depth of a recession to be etched down to the point where implanted impurities being contained change into the second impurities. CONSTITUTION:An Si layer 6 containing B is epitaxially formed on an Si substrate 5 containing As so that the thickness of the layer 6 may equal the depth of a recession to be formed. Then RIE is performed utilizing resist mask 2 while jetting out particles 7 are led to a mass analyzer 9 to detect any impurity atoms. When the depth of recession 3 reaches the specified value, the detected impurity changes from B to As. At this time, the etching process is stopped while removing the mask 2 and the recession with specified depth may be formed easily without fail.

4. 发明专利

JPS60106134A REACTIVE ION BEAM ETCHING DEVICE 失效
公开(公告)号：JPS60106134A
公开(公告)日：1985-06-11
申请号：JP21532383
申请日：1983-11-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATAKABE YAICHIROU , MATSUDA SHIYUUICHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain the stabilized ion beam of high density by a method wherein after a stabilized and high density Kr of Xe plasma has been formed between an electron lead-out electrode and a cathode case by introducing Kr gas or Xe gas into the cathode case, said Kr or Xe gas is replaced with Ar gas slowly. CONSTITUTION:After a stabilized Kr plasma of high density has been formed between an electron lead-out electrode 11 and a cathode case 8 by introducing Kr gas into the cathode case 8, the Kr gas to be introduced into the cathode case 8 is slowly replaced with Ar gas. As a result, a stabilized and high density Ar plasma, having the activation efficiency of reaction gas which is higher than that of the Kr plasma, can be formed between the electron lead-out electrode 11 and the cathode case 8 without increasing the bias voltage of be applied between them, thereby enabling to obtain the ion beam of stabilized and high density reactive gas for the etching performed on the film to be etched. Also, as a W cathode 3 is protected by the Kr and Ar gas introduced into the cathode case 8 in such a manner than the W cathode 3 will not come in contact with the reactive gas contained in an ion source chamber 1, the life of the W cathode can be extended.

5. 发明专利

JPS60258840A REACTIVE ION BEAM ETCHING APPARATUS 失效
公开(公告)号：JPS60258840A
公开(公告)日：1985-12-20
申请号：JP11588284
申请日：1984-06-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SHIYUUICHI , WATAKABE YAICHIROU
IPC分类号： H01J37/305 , H01J37/317 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform good etching efficiently from the start by making the position of an acceleration electrode movable in three-dimensional direction thereby making adjustable to the optimal position. CONSTITUTION:An acceleration electrode 7 is fixed to a supporting board 17 movable in x-direction while holding a supporting board 16 movable in y-direction where the upper and lower frame boards of said frame 16 are supported by a roller 18 movably in z-direction. Consequently, the acceleration electrode 7 can be moved freely in x, y and z directions. Prior to etching, beam current detector 19 is arranged immediately before a wafer 10 then said electrode 7 is moved in x, y and z directions to produce desired level and distribution of beam current. Consequently, good etching is achieved efficiently from the start.

6. 发明专利

JPS60213059A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS60213059A
公开(公告)日：1985-10-25
申请号：JP7119284
申请日：1984-04-09
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , MATSUDA SHIYUUICHI , OKAMOTO TATSUROU
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L29/43 , H01L29/45
CPC分类号： H01L29/456
摘要： PURPOSE:To prevent the generation of a hillock shaped on the formation of a CVD film while increasing the electro-migration resistance of a wiring by previously forming diffusion layer consisting of a titanium group metal to the surface of the wiring after shaping a predetermined pattern. CONSTITUTION:A metallic thin-film 5 composed of TiW or TiSi is formed on a wiring 2 shaped on a semiconductor substrate 1 according to a prescribed pattern through a sputtering method. A diffusion layer 6 consisting of TiW or TiSi is shaped on the surface of the wiring 2 through heating. The residual metallic thin-film 5 on the outside of the diffusion layer 6 is removed through plasma etching, etc. Lastly, a CVD film 3 covering the diffusion layer 6 is applied on the semiconductor substrate 1, and the substrate is insulated and protected.
摘要翻译：目的：为了防止在形成CVD膜的同时，通过在成形预定图案之后预先形成由钛族金属构成的扩散层到布线的表面，同时增加布线的电迁移电阻，从而形成形成CVD膜的小丘。构成：通过溅射法，在根据规定图案形成在半导体衬底1上的布线2上形成由TiW或TiSi构成的金属薄膜5。由TiW或TiSi构成的扩散层6通过加热在配线2的表面成形。通过等离子体蚀刻等除去扩散层6外侧的残留金属薄膜5.最后，将覆盖扩散层6的CVD膜3涂敷在半导体基板1上，对基板进行绝缘保护。

7. 发明专利

JPS6063932A REACTIVE ION BEAM ETCHING DEVICE 失效
公开(公告)号：JPS6063932A
公开(公告)日：1985-04-12
申请号：JP17157383
申请日：1983-09-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATAKABE YAICHIROU , MATSUDA SHIYUUICHI
IPC分类号： H01L21/302 , H01J37/08 , H01L21/3065
摘要： PURPOSE:To contrive the prolongation of the lifetime of a cathode by a method wherein the cathode of lanthanum hexaboride which radiates thermal electrons to generate reactive gas ions is stably operated in the atmosphere of an inert gas. CONSTITUTION:For example, Ar gas is introduced inside a cathode cover 8, and the reactive gas is introduced into an ion source chamber 1. Thereafter a positive high bias voltage of several hundred V is impressed on an electron lead- out electrode 10, and a negative one of several hundred V on an accelerating electrode 5. Next, when the thermal electrons are radiated by heating the LaB6 cathode 9, the Ar gas inside the cover 8 is activated and then comes to the state of plasma of isolation into Ar ions and electrons. The reactive gas in the chamber 1 is activated by the electrons in the Ar plasma. The positive ions are led out through a window by the negative high bias voltage impressed on the electrode 5, and perform etching by irradiating the film to be etched formed on the main surface of an Si wafer 6. The cathode 9 is then protected by the inert gas, and besides the heating temperature is low.

8. 发明专利

JPS59184529A Etching device by reactive ion beam 失效
标题翻译：通过反应离子束蚀刻装置
公开(公告)号：JPS59184529A
公开(公告)日：1984-10-19
申请号：JP6024183
申请日：1983-04-04
申请人： Mitsubishi Electric Corp
发明人： WATAKABE YAICHIROU , MATSUDA SHIYUUICHI
IPC分类号： H01L21/302 , H01J37/305 , H01L21/3065
CPC分类号： H01J37/3053
摘要： PURPOSE:To obtain the device being capable of uniform etching even for large area members to be etched by forming the ion beam having good uniformity by arranging electrostatic lenses between the etched member and an ion source or an ion acceleration electrode. CONSTITUTION:The device is provided with an ion source 1 for activating reactive gas so as to generate reactive ions and an acceleration electrode 2 for accelerating the reactive ions from said ion source 1. The beam of the accelerated reactive ions is projected onto a member to be etched 5 to perform the desired etching. In such device, an electrostatic lens 7 for restraining an expansion of the reactive ion beam is arranged between the ion source 1 and the etched member 5. For example, the electrostatic lens 7 produces an electric field designated by the broken lines between the ion acceleration electrode 2 and an Si wafer 5 which is the etched member and sets the expanding ion beam 4 into a parallel beam, thereby enabling the irradiation of the ion beam 4 having a good uniformity and being vertical to the Si wafer 5.
摘要翻译：目的：通过在蚀刻构件和离子源或离子加速电极之间布置静电透镜，通过形成具有均匀性的离子束，即使对于要蚀刻的大面积构件也能够均匀地蚀刻该器件。构成：该装置设置有用于激活反应气体以产生反应离子的离子源1和用于加速来自所述离子源1的反应离子的加速电极2.加速的反应离子束被投影到构件上蚀刻5以进行所需的蚀刻。在这种装置中，用于抑制反应离子束膨胀的静电透镜7布置在离子源1和蚀刻部件5之间。例如，静电透镜7产生由离线加速度之间的虚线指定的电场电极2和作为蚀刻部件的Si晶片5，并将扩张的离子束4设定为平行光束，从而能够照射具有良好的均匀性且垂直于Si晶片5的离子束4。

9. 发明专利

JPS60251625A REACTIVE ION BEAM ETCHING DEVICE 失效
公开(公告)号：JPS60251625A
公开(公告)日：1985-12-12
申请号：JP10984884
申请日：1984-05-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATAKABE YAICHIROU , MATSUDA SHIYUUICHI
IPC分类号： H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a reactive ion beam of uniform distribution by a method wherein the effective opening of the hole to be perforated on an ion lead-out electrode is formed in such a manner that it is small in the center part of the electrode and becomes larger as it approached the outer circumferential part. CONSTITUTION:The density of generated plasma in a reactive ion generating part 1 is distributed in such a manner that it becomes lower as going nearer to the circumferential part from the center part, and the reactive ion beam 8 led out from the above depends on the plasma density. Accordingly, in order to obtain the reactive ion beam 8 of uniform distribution from said density distribution, the lead out of the reactive ion beam 8 is suppressed by forming the hole 7a of an ion lead-out electrode 5a small in the center part, the hole 7a is made larger as it approaches the outer circumferential part, thereby enabling to facilitate the lead out of the reactive ion beam 8.

10. 发明专利

JPS60214543A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS60214543A
公开(公告)日：1985-10-26
申请号：JP7119584
申请日：1984-04-09
申请人： Mitsubishi Electric Corp
发明人： MATSUDA SHIYUUICHI , OKAMOTO TATSUROU , KOTANI HIDEO
IPC分类号： H01L23/522 , H01L21/768 , H01L21/88
摘要： PURPOSE:To prevent the generation of a hillock and electromigration by a method wherein a metal film of Al or an Al-Si alloy is formed on the substrate, and after that, the surface of the metal film is made to oxide and the metal film is turned into an insulating film. CONSTITUTION:A metal film 2 is formed on an Si substrate 1 by a sputtering method and when a lamp annealing is performed by irradiating infrared rays 7 on the metal film 2 for a short time in an atmosphere of O2 gas, the surface of the metal film 2 is brought to high temperatures and is oxidized with O2 and a thin oxide film 8 is formed. Accordingly, a resist pattern 3 is formed, the metal film 2 is performed an atching using an RIE, and after that, when an interlayer insulating film 5 is formed by a CVD method, it can be prevented for a hillock to generate on the surface of the metal film 2. Moreover, the electromigration- resisting property of the metal film 2 is upgraded by this oxide film 8 and the lifetime of this semiconductor device is improved.
摘要翻译：目的：通过在基板上形成Al或Al-Si合金的金属膜的方法，防止产生小丘和电迁移，然后将金属膜的表面制成氧化物，将金属膜变成绝缘膜。构成：通过溅射法在Si衬底1上形成金属膜2，并且当通过在O 2气体的气氛中短时间地在金属膜2上照射红外线7进行灯退火时，金属的表面将膜2带到高温并用O 2氧化并形成薄的氧化膜8。因此，形成抗蚀剂图案3，使用RIE进行金属膜2的翘曲，之后，通过CVD法形成层间绝缘膜5时，可以防止在表面产生小丘此外，通过该氧化膜8使金属膜2的耐迁移性提高，并且该半导体器件的寿命得到改善。

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