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1. 发明授权

US06647086B2 X-ray exposure apparatus 失效
标题翻译： X射线曝光装置
公开(公告)号：US06647086B2
公开(公告)日：2003-11-11
申请号：US09859043
申请日：2001-05-17
申请人： Mitsuaki Amemiya , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G21K500
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , G03F7/7005 , G21K5/04 , H05G2/00 , H05G2/008
摘要： A proximity X-ray exposure apparatus for irradiating a reticle with X-rays generated from an X-ray source and irradiating a substrate with X-rays that have passed through the reticle. The apparatus includes a plasma X-ray source for generating X-rays by producing plasma, and a control device for controlling X-ray intensity distribution by controlling production of the plasma so that the plasma is produced at a plurality of positions in one irradiating operation of the substrate with the X-rays. The control device controls the X-ray intensity distribution in order to control the plurality of positions so that a required amount of defocusing, which is a size of a projection image corresponding to one point on the reticle formed by irradiating the reticle with X-rays generated at the plurality of positions, can be obtained.
摘要翻译：一种接近X射线曝光装置，用于用X射线源产生的X射线照射掩模版，并且通过已经通过掩模版的X射线照射衬底。该装置包括：通过产生等离子体产生X射线的等离子体X射线源;以及控制装置，用于通过控制等离子体的产生来控制X射线强度分布，使得在一次照射操作中在多个位置产生等离子体的X射线。控制装置控制X射线强度分布，以便控制多个位置，使得所需量的散焦，其是通过用X射线照射掩模版而形成的与掩模版上的一个点相对应的投影图像的尺寸在多个位置产生。

2. 发明授权

US06272202B1 Exposure method and X-ray mask structure for use with the same 有权
标题翻译：曝光方法和X射线掩模结构使用相同
公开(公告)号：US06272202B1
公开(公告)日：2001-08-07
申请号：US09426945
申请日：1999-10-26
申请人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
发明人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G21K500
CPC分类号： G03F7/70325 , G03F1/22 , G03F1/50 , G03F7/001 , G03F7/2022 , G03F7/7035 , G03F7/70466
摘要： An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.
摘要翻译：一种用于将图案印刷到要曝光的工件上的曝光方法包括：第一曝光步骤，用于在工件上形成并且通过曝光形成在掩模上形成并且不具有周期性结构的第一吸收材料图案的转印图像，以及第二曝光步骤，用于在工件上和通过曝光印刷由于在掩模上形成的具有周期性结构的第二吸收材料图案而通过菲涅耳衍射产生的衍射图案，衍射图案具有对应于1 / n的周期其中n是不小于2的整数，并且其中同时执行第一和第二曝光步骤。

3. 发明授权

US5835560A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US5835560A
公开(公告)日：1998-11-10
申请号：US963874
申请日：1997-11-04
申请人： Mitsuaki Amemiya , Yutaka Watanabe , Kazuyuki Kasumi
发明人： Mitsuaki Amemiya , Yutaka Watanabe , Kazuyuki Kasumi
IPC分类号： G03F7/20 , G21K1/06 , G21K5/02 , G21K5/00
CPC分类号： G03F7/70058 , G03F7/708 , G21K1/06 , G21K5/02
摘要： An exposure apparatus includes a mirror for reflecting radiation light from a light source, a driving mechanism for holding and oscillating the mirror, a detector for detecting the position of a beam of the radiation light projected on the mirror, an adjusting mechanism for adjusting the position of the mirror with respect to the radiation light on the basis of an output of the detector, and a reference table for positioning the driving mechanism and the detector with respect to the same reference.
摘要翻译：曝光装置包括用于反射来自光源的辐射光的反射镜，用于保持和振荡反射镜的驱动机构，用于检测投射在反射镜上的辐射光束的位置的检测器，用于调节位置的调节机构基于检测器的输出相对于辐射光的反射镜，以及用于相对于相同基准定位驱动机构和检测器的参考表。

4. 发明授权

US5159621A X-ray transmitting window and method of mounting the same 失效
标题翻译： X射线发射窗及其安装方法
公开(公告)号：US5159621A
公开(公告)日：1992-10-27
申请号：US739259
申请日：1991-08-01
申请人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
发明人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
IPC分类号： G21K5/00 , G21K5/04 , H01J35/18
CPC分类号： G21K5/04 , H01J2235/18
摘要： An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.

5. 发明授权

US06645707B2 Device manufacturing method 失效
标题翻译：器件制造方法
公开(公告)号：US06645707B2
公开(公告)日：2003-11-11
申请号：US09534334
申请日：2000-03-24
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
IPC分类号： G03C556
CPC分类号： G03F7/70466 , G03F7/2022
摘要： A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要翻译：一种器件制造方法包括：第一曝光步骤，用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤，用于显影衬底的第一层;以及第二曝光步骤，在显影步骤之后执行，用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。

6. 发明授权

US06453001B2 X-ray exposure apparatus 失效
标题翻译： X射线曝光装置
公开(公告)号：US06453001B2
公开(公告)日：2002-09-17
申请号：US09853712
申请日：2001-05-14
申请人： Yutaka Watanabe , Mitsuaki Amemiya
发明人： Yutaka Watanabe , Mitsuaki Amemiya
IPC分类号： H01L2130
CPC分类号： G03F7/70058 , G21K1/04
摘要： An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.
摘要翻译： X射线曝光装置具有通过产生等离子体产生X射线的等离子体X射线源和用于会聚从X射线源发散的X射线的准直仪，并且减小全局发散角以照射掩模 X光片。通过沿准直器的轴线垂直或平行的方向移动准直仪的位置或角度来改变从掩模上的一个点看到的局部会聚角度。使用具有如此控制的会聚角的X射线将掩模上的图案转印到晶片。结果，可控参数增加并且可以获得更合适的抗蚀剂图案。此外，改善了曝光更精细图案的工艺公差。

7. 发明授权

US5606586A X-ray exposure method and apparatus and device manufacturing method 失效
标题翻译： X射线曝光方法及装置和装置制造方法
公开(公告)号：US5606586A
公开(公告)日：1997-02-25
申请号：US678784
申请日：1996-07-11
申请人： Mitsuaki Amemiya , Yasuaki Fukuda , Yutaka Watanabe , Akira Miyake
发明人： Mitsuaki Amemiya , Yasuaki Fukuda , Yutaka Watanabe , Akira Miyake
IPC分类号： B29C35/08 , G03F7/20 , G21K5/00
CPC分类号： G03F7/70075 , G03F7/2039 , G03F7/702 , B29C2035/0844
摘要： An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.
摘要翻译：使用来自同步加速器辐射源的X射线的曝光方法包括确定曝光区域中的X射线强度分布与曝光量分布之间的关系; 以及通过使用关系控制曝光区域中的各个位置的剂量量来进行曝光操作，其中通过改变用于控制曝光操作的活动快门的驱动轮廓来控制剂量，并且其中的关系为作为曝光区域中的位置信息的函数的X射线强度与曝光量之间的比例系数。

8. 发明授权

US5604779A Optical exposure method and device formed by the method 失效
标题翻译：通过该方法形成的光学曝光方法和装置
公开(公告)号：US5604779A
公开(公告)日：1997-02-18
申请号：US455154
申请日：1995-05-31
申请人： Mitsuaki Amemiya , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G03B27/72 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70075 , G03F7/2039 , G03F7/7035 , G03F7/70358 , G03F7/70875 , G03F9/703
摘要： A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.
摘要翻译：适用于通过使用同步加速器辐射等扫描曝光的转印倍率校正方法。在通过使用同步加速器辐射的根据扫描曝光方法的接近曝光中，通过与扫描同时相对移动晶片和掩模来校正扫描方向上的放大率。此外，通过改变接近间隙或调节掩模或晶片的温度来执行放大率的总体校正。结果，可以在垂直和水平方向上分别校正传送倍率。

9. 发明授权

US06324250B1 Exposure method 有权
标题翻译：曝光方法
公开(公告)号：US06324250B1
公开(公告)日：2001-11-27
申请号：US09425224
申请日：1999-10-22
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Yutaka Watanabe
IPC分类号： H01L2130
CPC分类号： G03F7/70425 , G03F1/22 , G03F1/50 , G03F7/2022
摘要： An exposure method for transferring a pattern of a mask onto a workpiece in a proximity exposure system, includes a first exposure step for exposing a predetermined portion of the workpiece, while maintaining a first spacing between the mask and the workpiece, and a second exposure step for exposing the predetermined portion of the workpiece, while maintaining a second spacing, different from the first spacing, between the mask and the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要翻译：一种用于在接近曝光系统中将掩模图案转印到工件上的曝光方法包括：第一曝光步骤，用于在保持掩模和工件之间的第一间隔的同时保持工件的预定部分，以及第二曝光步骤用于在所述掩模和所述工件之间保持与所述第一间隔不同的第二间隔的情况下暴露所述工件的预定部分，其中在显影处理之前，重叠地执行所述第一和第二曝光步骤中的曝光。

10. 发明授权

US09745406B2 Curable composition 有权
公开(公告)号：US09745406B2
公开(公告)日：2017-08-29
申请号：US13232447
申请日：2011-09-14
申请人： Yutaka Watanabe , Atsushi Saito
发明人： Yutaka Watanabe , Atsushi Saito
IPC分类号： C08G18/48 , C08G18/10 , C08G18/75 , C08G18/76 , C08L33/04 , C08L43/04 , C08L75/08 , C09J143/04 , C08L33/14 , C08L75/04 , C08F220/14 , C08F220/18
CPC分类号： C08G18/4825 , C08F220/14 , C08F2220/1891 , C08G18/10 , C08G18/755 , C08G18/7621 , C08L33/04 , C08L33/14 , C08L43/04 , C08L75/04 , C08L75/08 , C08L2666/20 , C09J143/04 , C08G18/289 , C08G18/2865 , C08L2666/04 , C08F2220/1825 , C08F230/08 , C08F2220/1808 , C08F2220/1858 , C08F2220/1883
摘要： Provided is a curable composition which realizes compatibility between curability and toughness, shows rapid curability and excellent storage stability, and does not require any tin catalyst. The curable composition comprises: (A) a vinyl-based resin obtained by causing a compound (I) represented by the following general formula (1) and a compound (II) represented by the following general formula (2) to react with each other; (B) a urethane-based resin obtained by causing a hydroxyl group-containing organic polymer, a polyisocyanate compound, a compound (III) represented by the following general formula (3), and an amine compound to react with one another; and (C) a curing catalyst.

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