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    • 7. 发明授权
    • Chemical mechanical polishing in forming semiconductor device
    • 化学机械抛光成型半导体器件
    • US06790742B2
    • 2004-09-14
    • US10293243
    • 2002-11-13
    • Ming-Sheng YangJuan-Yuan WuWater Lur
    • Ming-Sheng YangJuan-Yuan WuWater Lur
    • H01L2176
    • H01L21/76229
    • A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is formed. A number of shallow trenches are formed between the active regions one or more of which may constitute an alignment mark. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask exposes a portion of the oxide layer over the large active area and over the alignment mark. The oxide layer of each large active region and the alignment mark is removed. The partial reverse active mask is removed. The oxide layer is planarized.
    • 公开了用于形成浅沟槽隔离的化学机械抛光的方法。 提供了具有多个有效区域的基板,包括多个相对较大的有源区域和多个相对小的有源区域。 该方法包括以下步骤。 形成衬底上的氮化硅层。 在有源区域之间形成多个浅沟槽,其中一个或多个可以构成对准标记。 在衬底上形成氧化物层,使得浅沟槽被氧化物层填充。 在氧化物层上形成部分反向有源掩模。 部分反向有源掩模将氧化物层的一部分暴露在大的有效区域上方和对准标记之上。 去除每个大活性区域的氧化物层和对准标记。 去除部分反向主动掩模。 氧化层平坦化。