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1. 发明授权

US06822395B2 Devices for controlling electron emission in plasma flood system 失效
标题翻译：用于控制等离子体洪水系统中电子发射的装置
公开(公告)号：US06822395B2
公开(公告)日：2004-11-23
申请号：US10233842
申请日：2002-09-03
申请人： Ming-Hsing Li , Min-Tsung Lee , Keneth Lin , Yow-Te Tsai , Huang-Ta Huang , Chao-Chun Chen , Huei-Mei Jao
发明人： Ming-Hsing Li , Min-Tsung Lee , Keneth Lin , Yow-Te Tsai , Huang-Ta Huang , Chao-Chun Chen , Huei-Mei Jao
IPC分类号： H01J724
CPC分类号： H01J37/3171 , H01J2237/0041
摘要： A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.
摘要翻译：一种用于控制从等离子体放电系统的电弧室将电子发射到用于将离子注入到衬底中的离子注入机中的离子束的装置。在一个实施例中，本发明包括设置在电弧室和注入机的等离子体引导管之间的排放口中的机械快门。可以选择性地改变快门的孔尺寸，以便控制从电弧室到等离子体引导管中的离子束的电子的发射。在另一个实施例中，本发明包括设置在排出口中的吸电子探针。

2. 发明授权

US07795101B2 Method of forming a MOS transistor 有权
标题翻译：形成MOS晶体管的方法
公开(公告)号：US07795101B2
公开(公告)日：2010-09-14
申请号：US12701612
申请日：2010-02-08
申请人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
发明人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L29/6659
摘要： A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.
摘要翻译：一种形成MOS晶体管的方法，其中进行共同注入以将碳共注入物注入到源极区域和漏极区域或晕圈注入区域中，以有效地防止掺杂剂在源区域中过度扩散，并且漏极区域或晕圈注入区域，以获得良好的连接曲线并改善短沟道效应，并且碳共植入物来自包含CO或CO 2的前体。

3. 发明授权

US07396717B2 Method of forming a MOS transistor 有权
标题翻译：形成MOS晶体管的方法
公开(公告)号：US07396717B2
公开(公告)日：2008-07-08
申请号：US11278434
申请日：2006-04-03
申请人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
发明人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/2658 , H01L21/26506 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
摘要翻译：一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或用于获得良好的接合曲线并改善短沟道效应。植入物包括碳，烃或烃的衍生物，例如选自C，Chd x H y O，O +和/或C（C 其中x为1〜10的数，y为4〜4的数，n为0〜 20，n为1〜1000的数。

4. 发明申请

US20060135153A1 Satellite communication system architecture 审中-公开
标题翻译：卫星通信系统架构
公开(公告)号：US20060135153A1
公开(公告)日：2006-06-22
申请号：US11216110
申请日：2005-09-01
申请人： Chao-Chun Chen
发明人： Chao-Chun Chen
IPC分类号： H04Q7/20
CPC分类号： H04B7/18515
摘要： A satellite communication system architecture that supports both commercial and tactical applications may include polarization-based multiplexing and de-multiplexing and common routing. Such a satellite may be placed in such a way as to minimize intentional interference.
摘要翻译：支持商业和战术应用的卫星通信系统架构可以包括基于偏振的复用和解复用和公共路由。这样的卫星可以以使有意干扰最小化的方式放置。

5. 发明授权

US08053847B2 Method for fabricating metal-oxide semiconductor transistors 有权
标题翻译：金属氧化物半导体晶体管的制造方法
公开(公告)号：US08053847B2
公开(公告)日：2011-11-08
申请号：US12324896
申请日：2008-11-28
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

6. 发明申请

US20090101894A1 METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
标题翻译：制备金属氧化物半导体晶体管的方法
公开(公告)号：US20090101894A1
公开(公告)日：2009-04-23
申请号：US12324896
申请日：2008-11-28
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L29/78 , H01L21/336 , H01L35/24 , H01L51/40
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

7. 发明申请

US20070196990A1 METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
标题翻译：制备金属氧化物半导体晶体管的方法
公开(公告)号：US20070196990A1
公开(公告)日：2007-08-23
申请号：US11675091
申请日：2007-02-15
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L21/336
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source/drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source/drain region.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。执行离子注入工艺以将包含硼的分子簇注入围绕间隔物的半导体衬底中，以形成源/漏区。分子簇内各硼原子的重量比优选小于10％。此后，执行毫秒退火处理以激活源极/漏极区域内的分子簇。

8. 发明申请

US20130162237A1 Energy-based Oriented Switching Mode Power Supply 有权
标题翻译：基于能量的定向开关电源
公开(公告)号：US20130162237A1
公开(公告)日：2013-06-27
申请号：US13429078
申请日：2012-03-23
申请人： Chung-Hsun Huang , Chao-Chun Chen
发明人： Chung-Hsun Huang , Chao-Chun Chen
IPC分类号： G05F3/02
CPC分类号： H02M3/158 , H02M2001/0035 , Y02B70/16
摘要： An energy-based oriented switching mode power supply includes a bi-directional converter having an energy input and a load output, and an energy based pulsed generator connected between the energy input and the load output for outputting a gate voltage signal controlling how much energy is supplied from the energy input. The energy based pulsed generator receives a clock signal and outputs the gate voltage signal according to the load output of the bi-directional converter when the clock signal is at a high level. Accordingly, the switching mode power supply achieves a hybrid of PWM and PFM, depending on the energy demand of the load output, for a fast transient response and a small voltage ripple whilst improving power efficiency over a wide load range.
摘要翻译：基于能量的取向开关模式电源包括具有能量输入和负载输出的双向转换器，以及连接在能量输入和负载输出之间的基于能量的脉冲发生器，用于输出控制多少能量的栅极电压信号从能量输入提供。基于能量的脉冲发生器接收时钟信号，并且当时钟信号处于高电平时，根据双向转换器的负载输出输出栅极电压信号。因此，根据负载输出的能量需求，开关模式电源实现了PWM和PFM的混合，用于快速瞬态响应和小电压纹波，同时提高了宽负载范围内的功率效率。

9. 发明申请

US20070264929A1 SATELLITE COMMUNICATION SYSTEM ARCHITECTURE 审中-公开
标题翻译：卫星通信系统架构
公开(公告)号：US20070264929A1
公开(公告)日：2007-11-15
申请号：US11627569
申请日：2007-01-26
申请人： Chao-Chun Chen
发明人： Chao-Chun Chen
IPC分类号： H04K3/00
CPC分类号： H04B7/18515
摘要： A satellite communication system architecture that supports both commercial and tactical applications may include polarization-based and/or frequency-based multiplexing and de-multiplexing and common routing. Such a satellite communication system may be implemented in such a way as to minimize intentional interference.
摘要翻译：支持商业和战术应用的卫星通信系统架构可以包括基于偏振的和/或基于频率的复用和解复用和公共路由。这样的卫星通信系统可以以使有意干扰最小化的方式来实现。

10. 发明申请

US20070228464A1 MOS transistor 审中-公开
标题翻译： MOS晶体管
公开(公告)号：US20070228464A1
公开(公告)日：2007-10-04
申请号：US11748479
申请日：2007-05-14
申请人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
发明人： Hsiang-Ying Wang , Chin-Cheng Chien , Tsai-Fu Hsiao , Ming-Yen Chien , Chao-Chun Chen
IPC分类号： H01L29/772
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/6659
摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.
摘要翻译：一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或用于获得良好的接合曲线并改善短沟道效应。植入物包括碳，烃或烃的衍生物，例如选自C，C≡H，H +和/或C（C）其中x为1〜10的数，y为4〜20的数，n为1〜10的数，n为0〜数量为1〜1000。

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