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1. 发明授权

US06973829B2 Semiconductor dynamic quantity sensor with movable electrode and fixed electrode supported by support substrate 有权
标题翻译：具有可动电极和支撑基板支撑的固定电极的半导体动态传感器
公开(公告)号：US06973829B2
公开(公告)日：2005-12-13
申请号：US09925021
申请日：2001-08-09
申请人： Minekazu Sakai , Yoshiyuki Kato , Minoru Murata
发明人： Minekazu Sakai , Yoshiyuki Kato , Minoru Murata
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： A semiconductor dynamic quantity sensor has a support substrate with a rectangular opening portion, and a movable electrode and fixed electrodes are respectively supported by the support substrate through supporting portions to face the opening portion. The supporting portions supporting the movable electrode are arranged in a direction approximately the same as that in which the supporting portions supporting the fixed electrodes are arranged.
摘要翻译：半导体动态量传感器具有矩形开口部分的支撑基板，并且可动电极和固定电极分别由支撑基板通过支撑部分支撑以面对开口部分。支撑可动电极的支撑部分布置在与支撑固定电极的支撑部分布置的方向大致相同的方向上。

2. 发明授权

US06450031B1 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06450031B1
公开(公告)日：2002-09-17
申请号：US09625860
申请日：2000-07-26
申请人： Minekazu Sakai , Minoru Murata , Seiki Aoyama , Youko Nakagawa
发明人： Minekazu Sakai , Minoru Murata , Seiki Aoyama , Youko Nakagawa
IPC分类号： G01P1500
CPC分类号： G01P15/125 , B81B3/0086 , B81B2201/0235 , B81B2203/0109 , B81B2203/051 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.
摘要翻译：一种半导体物理量传感器，即使在使用环境变化的情况下也能够获得稳定的传感器输出。将硅薄膜设置在支撑基板上的绝缘膜上，并且具有重量部分的电桥结构和具有固定电极的移动电极和悬臂结构形成为与该硅薄膜分开的部分。设置在重量部分和悬臂固定电极上的移动电极彼此面对地设置。在悬臂固定电极的固定端的根部处形成狭缝，从而使根部的宽度W1比固定电极本体的宽度W2窄。结果，抑制了支撑基板的翘曲向悬臂固定电极的传递。

3. 发明授权

US06430999B1 Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove 有权
公开(公告)号：US06430999B1
公开(公告)日：2002-08-13
申请号：US09818624
申请日：2001-03-28
申请人： Minoru Murata , Minekazu Sakai
发明人： Minoru Murata , Minekazu Sakai
IPC分类号： G01P1500
摘要： A semiconductor physical quantity sensor has a beam connecting a movable portion and a support substrate for displacing the movable portion in a displacement direction. The beam has a rectangular frame shape with a hollow portion and is surrounded by a groove. The groove has opposing intervals at both sides of the beam in the displacement direction, and the opposing intervals are equal to an interval of the hollow portion in the displacement direction. Accordingly, etching rates at the groove and the hollow portion become approximately equal to each other, reducing processing variation of the beam.

4. 发明授权

US06276207B1 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权
标题翻译：具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法
公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译：一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。加速度传感器具有传感器部分和处理部分。传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。传感器部分通过沟槽与处理部分电绝缘。

5. 发明授权

US06250165B1 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06250165B1
公开(公告)日：2001-06-26
申请号：US09239781
申请日：1999-01-29
申请人： Minekazu Sakai , Inao Toyoda , Minoru Murata
发明人： Minekazu Sakai , Inao Toyoda , Minoru Murata
IPC分类号： G01L900
CPC分类号： B81C1/00158 , B81C2201/014 , G01L9/0042 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.
摘要翻译：半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

6. 发明授权

US06199430B1 Acceleration sensor with ring-shaped movable electrode 有权
标题翻译：带环形可动电极的加速度传感器
公开(公告)号：US06199430B1
公开(公告)日：2001-03-13
申请号：US09241137
申请日：1999-02-02
申请人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
发明人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
IPC分类号： G01P15125
CPC分类号： B81B7/0006 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P15/135 , G01P15/18 , G01P2015/0817 , G01P2015/0828 , G01V1/181 , H01H1/0036
摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.
摘要翻译：加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

7. 发明授权

US6151966A Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure 有权
标题翻译：具有Rahmen结构的电极的半导体动力传感器装置
公开(公告)号：US6151966A
公开(公告)日：2000-11-28
申请号：US304849
申请日：1999-05-05
申请人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
发明人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要翻译：通过微加工在SOI衬底上形成半导体加速度计装置。可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。可动电极与配重部一体地形成为梳形。一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。这种结构减小了每个电极的重量，同时增加了抗扭力的强度。由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

8. 发明授权

US06792805B2 Capacitive acceleration sensor 有权
标题翻译：电容式加速度传感器
公开(公告)号：US06792805B2
公开(公告)日：2004-09-21
申请号：US10369198
申请日：2003-02-20
申请人： Minoru Murata , Minekazu Sakai
发明人： Minoru Murata , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： A capacitive acceleration sensor includes a supporting substrate, a movable member, and two fixed members. The movable member moves in response to a force that acts on the movable member. Each fixed member is stationary under the force. Two capacitances are formed between the movable member and the fixed members. One of the capacitances increases while the other decreases when the movable member moves in response to the force. The force includes a substantially constant force and a variable force when an acceleration is measured using the sensor. The variable force is proportional to the acceleration. The acceleration is measured on the basis of the difference between the capacitances. The capacitances are different from each other when the force that acts on the movable member is zero to reduce the difference between the capacitances that corresponds to the substantially constant force.
摘要翻译：电容式加速度传感器包括支撑基板，可移动部件和两个固定部件。可移动构件响应于作用在可动构件上的力移动。每个固定构件在力作用下是静止的。在可动构件和固定构件之间形成两个电容。当可动构件响应于力而移动时，电容之一增加而另一个减小。当使用传感器测量加速度时，该力包括基本恒定的力和可变的力。可变力与加速度成比例。基于电容之差测量加速度。当作用在可动构件上的力为零时，电容彼此不同，以减小对应于基本恒定的力的电容之间的差异。

9. 发明授权

US06494096B2 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06494096B2
公开(公告)日：2002-12-17
申请号：US09801917
申请日：2001-03-09
申请人： Minekazu Sakai , Minoru Murata
发明人： Minekazu Sakai , Minoru Murata
IPC分类号： G01P15125
CPC分类号： B81B3/0008 , B81B2201/0235 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable electrode to a first or second fixed electrode due to an electrostatic attracting force generated therebetween. The sensor has a weight portion and movable electrodes formed on both sides of which, and first and second fixed electrodes each engaging with the each of the movable electrodes. Each of the first and second fixed electrodes is disposed in parallel with each of the movable electrodes so that side faces thereof determine a detection interval and non-detection interval larger than the detection interval with side faces of adjoining two of the movable electrodes. Protrusions are formed on both of the side faces of each of the first and second fixed electrodes. These protrusions prevent the movable electrodes from adhering to the first or second fixed electrode in both of the detection interval and non-detection interval.
摘要翻译：一种半导体加速度传感器，其防止由于其间产生的静电吸引力而将可动电极粘附到第一或第二固定电极。该传感器具有一个配重部分和形成在其两侧的可动电极，并且每个可移动电极各自配置有第一和第二固定电极。第一固定电极和第二固定电极中的每一个与每个可动电极平行地设置，使得其侧面确定相邻两个可动电极的侧面的检测间隔和大于检测间隔的非检测间隔。突起形成在第一和第二固定电极中的每一个的两个侧面上。这些突起在检测间隔和非检测间隔中都防止可动电极粘附到第一或第二固定电极。

10. 发明授权

US06423563B2 Method for manufacturing semiconductor dynamic quantity sensor 有权
标题翻译：制造半导体动态量传感器的方法
公开(公告)号：US06423563B2
公开(公告)日：2002-07-23
申请号：US09861535
申请日：2001-05-22
申请人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
发明人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
IPC分类号： H01L2984
CPC分类号： B81C1/00936 , B81B3/0005 , B81B2201/0235 , B81B2201/025 , B81B2203/0136 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/053 , B81C2201/112 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/084
摘要： A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.
摘要翻译：半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。半导体层的电阻率等于或小于3OMEGA cm。可移动电极设置在半导体层中，以根据作用于其的动态量而移位。在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。电容器具有响应于可动电极的位移而变化以检测动态量的容量。

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