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1. 发明授权

US08604547B2 Memory element and semiconductor device 有权
标题翻译：存储元件和半导体器件
公开(公告)号：US08604547B2
公开(公告)日：2013-12-10
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
IPC分类号： H01L27/12 , H01L21/70
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译：本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层，覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。

2. 发明申请

US20080149733A1 Memory Element and Semiconductor Device 有权
标题翻译：存储器元件和半导体器件
公开(公告)号：US20080149733A1
公开(公告)日：2008-06-26
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
IPC分类号： G06K19/07 , H01L29/00 , G11C17/00
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译：本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层，覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。

3. 发明授权

US07745252B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07745252B2
公开(公告)日：2010-06-29
申请号：US11510396
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/00
CPC分类号： H01L51/0024 , H01L27/3281 , H01L51/0021 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
摘要翻译：本发明的目的是以高产率制造其中含有含有有机化合物的层的元件设置在柔性基板上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过形成无机化合物层，第一导电层和含有机化合物的层，形成与分离层上的元素形成层，形成与含有有机化合物和无机化合物的层接触的第二导电层层; 以及在所述第二导电层上粘贴第一柔性基板之后将所述分离层和所述元件形成层彼此分离。

4. 发明申请

US20070045621A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070045621A1
公开(公告)日：2007-03-01
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L29/08
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

5. 发明授权

US07611965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07611965B2
公开(公告)日：2009-11-03
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

6. 发明申请

US20070048970A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070048970A1
公开(公告)日：2007-03-01
申请号：US11510396
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L51/0024 , H01L27/3281 , H01L51/0021 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
摘要翻译：本发明的目的是以高产率制造其中含有含有有机化合物的层的元件设置在柔性基板上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过形成无机化合物层，第一导电层和含有机化合物的层，形成与分离层上的元素形成层，形成与含有有机化合物和无机化合物的层接触的第二导电层层; 以及在所述第二导电层上粘贴第一柔性基板之后将所述分离层和所述元件形成层彼此分离。

7. 发明授权

US08862053B2 Semiconductor device, communication system, and method of charging the semiconductor device 有权
标题翻译：半导体装置，通信系统以及半导体装置的充电方法
公开(公告)号：US08862053B2
公开(公告)日：2014-10-14
申请号：US13244396
申请日：2011-09-24
申请人： Takehisa Sato , Takeshi Osada
发明人： Takehisa Sato , Takeshi Osada
IPC分类号： H04B5/00 , H02J7/00 , G06K19/07 , H02J7/02 , H02J5/00
CPC分类号： G06K19/0723 , G06K19/0701 , G06K19/0702 , H02J50/10 , H02J50/27 , H02J50/80
摘要： An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device.
摘要翻译：本发明的目的是提供一种包括可无线充电的电池的半导体器件，其中即使当半导体器件不靠近馈电器时，电池也可被充电。这样的半导体装置具有天线电路，通过天线电路进行无线通信的通信控制电路，经由天线电路向外部无线馈送的电力充电的电池以及无线馈电的振荡电路的结构电力通过天线电路。此外，半导体器件中的电池被无线充电，并且半导体器件在外部将电力无线地馈送到另一半导体器件中的可充电电池。

8. 发明授权

US08463332B2 Wireless communication device 有权
标题翻译：无线通信设备
公开(公告)号：US08463332B2
公开(公告)日：2013-06-11
申请号：US11892343
申请日：2007-08-22
申请人： Takehisa Sato , Takeshi Osada
发明人： Takehisa Sato , Takeshi Osada
IPC分类号： H04M1/00
CPC分类号： G06K19/0723 , G06K19/0702 , G06K19/0707
摘要： It is an object of the present invention to facilitate charge of a battery of a wireless communication device. In addition, it is another object of the present invention to provide a wireless communication device capable of transmitting and receiving individual information without battery replacement which is required due to the power consumption of a battery. A wireless communication device includes a plurality of antenna circuits and a plurality of batteries electrically connected to any one of the plurality of antenna circuits through a switch, where the plurality of batteries are each electrically connected to a different circuit, the plurality of antenna circuits receive electric waves so that the plurality of batteries electrically connected to the plurality of antenna circuits are charged, and at least one of the plurality of antenna circuits receives an electric wave having a different frequency.
摘要翻译：本发明的一个目的是便利无线通信设备的电池的充电。此外，本发明的另一个目的是提供一种无线电通信设备，其能够发送和接收由于电池的功耗而需要的电池替换。无线通信装置包括多个天线电路和多个电池，其通过开关电连接到所述多个天线电路中的任一个，其中所述多个电池各自电连接到不同的电路，所述多个天线电路接收电波，使得与多个天线电路电连接的多个电池被充电，并且多个天线电路中的至少一个接收具有不同频率的电波。

9. 发明授权

US08030885B2 Semiconductor device, communication system, and method of charging the semiconductor device 有权
标题翻译：半导体装置，通信系统以及半导体装置的充电方法
公开(公告)号：US08030885B2
公开(公告)日：2011-10-04
申请号：US12939290
申请日：2010-11-04
申请人： Takehisa Sato , Takeshi Osada
发明人： Takehisa Sato , Takeshi Osada
IPC分类号： H02J7/00
CPC分类号： G06K19/0723 , G06K19/0701 , G06K19/0702 , H02J50/10 , H02J50/27 , H02J50/80
摘要： An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device.
摘要翻译：本发明的目的是提供一种包括可无线充电的电池的半导体器件，其中即使当半导体器件不靠近馈电器时，电池也可被充电。这样的半导体装置具有天线电路，通过天线电路进行无线通信的通信控制电路，经由天线电路向外部无线馈送的电力充电的电池以及无线馈电的振荡电路的结构电力通过天线电路。此外，半导体器件中的电池被无线充电，并且半导体器件在外部将电力无线地馈送到另一半导体器件中的可充电电池。

10. 发明授权

US07684781B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07684781B2
公开(公告)日：2010-03-23
申请号：US11592251
申请日：2006-11-03
申请人： Toshihiko Saito , Kiyoshi Kato , Takehisa Sato
发明人： Toshihiko Saito , Kiyoshi Kato , Takehisa Sato
IPC分类号： H04B1/38 , H04Q7/20
CPC分类号： H01Q1/38 , H01L2924/0002 , H01Q1/2283 , H01Q23/00 , H01L2924/00
摘要： An object is to reduce troubles during pressure bonding of an antenna in a wireless chip including a thin film. A wireless chip made from a thin film is formed, in particular a wireless chip including a memory area including an organic compound layer, and a distance between the memory area and a pad is a prescribed value or longer. As a result, data writing can be carried out without being affected by stress or heat during pressure bonding of the antenna. For a substrate over which the wireless chip is provided, a glass substrate or a silicon wafer can be used.
摘要翻译：目的在于减少包含薄膜的无线芯片中的天线的压接时的麻烦。形成由薄膜制成的无线芯片，特别是包括包括有机化合物层的存储区域的无线芯片，并且存储区域和焊盘之间的距离是规定值或更长。因此，可以在天线的压接期间不受应力或热的影响而进行数据写入。对于提供无线芯片的基板，可以使用玻璃基板或硅晶片。

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