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1. 发明申请

US20080149733A1 Memory Element and Semiconductor Device 有权
标题翻译：存储器元件和半导体器件
公开(公告)号：US20080149733A1
公开(公告)日：2008-06-26
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
IPC分类号： G06K19/07 , H01L29/00 , G11C17/00
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译：本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层，覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。

2. 发明授权

US08604547B2 Memory element and semiconductor device 有权
标题翻译：存储元件和半导体器件
公开(公告)号：US08604547B2
公开(公告)日：2013-12-10
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
IPC分类号： H01L27/12 , H01L21/70
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译：本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层，覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。

3. 发明申请

US20070045621A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070045621A1
公开(公告)日：2007-03-01
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L29/08
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

4. 发明授权

US07745252B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07745252B2
公开(公告)日：2010-06-29
申请号：US11510396
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/00
CPC分类号： H01L51/0024 , H01L27/3281 , H01L51/0021 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
摘要翻译：本发明的目的是以高产率制造其中含有含有有机化合物的层的元件设置在柔性基板上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过形成无机化合物层，第一导电层和含有机化合物的层，形成与分离层上的元素形成层，形成与含有有机化合物和无机化合物的层接触的第二导电层层; 以及在所述第二导电层上粘贴第一柔性基板之后将所述分离层和所述元件形成层彼此分离。

5. 发明授权

US07611965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07611965B2
公开(公告)日：2009-11-03
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

6. 发明申请

US20070048970A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070048970A1
公开(公告)日：2007-03-01
申请号：US11510396
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L51/0024 , H01L27/3281 , H01L51/0021 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
摘要翻译：本发明的目的是以高产率制造其中含有含有有机化合物的层的元件设置在柔性基板上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过形成无机化合物层，第一导电层和含有机化合物的层，形成与分离层上的元素形成层，形成与含有有机化合物和无机化合物的层接触的第二导电层层; 以及在所述第二导电层上粘贴第一柔性基板之后将所述分离层和所述元件形成层彼此分离。

7. 发明授权

US07688624B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07688624B2
公开(公告)日：2010-03-30
申请号：US11547905
申请日：2005-11-22
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C11/34
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

8. 发明授权

US08295104B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08295104B2
公开(公告)日：2012-10-23
申请号：US12618161
申请日：2009-11-13
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C7/00
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

9. 发明申请

US20070230235A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20070230235A1
公开(公告)日：2007-10-04
申请号：US11547905
申请日：2005-11-22
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Koto , Ryoji Nomura , Yoshitaka Mariya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Koto , Ryoji Nomura , Yoshitaka Mariya
IPC分类号： G11C13/00
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

10. 发明申请

US20090140231A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140231A1
公开(公告)日：2009-06-04
申请号：US11918960
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
发明人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L45/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译：本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。

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