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1. 发明申请

US20110265823A1 METHOD FOR PROCESSING A SUBSTRATE USING A SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS 有权
标题翻译：使用具有控制菜单的单个相位头处理基板的方法
公开(公告)号：US20110265823A1
公开(公告)日：2011-11-03
申请号：US13184475
申请日：2011-07-15
申请人： Mike Ravkin , Alex Kabansky , John de Larios
发明人： Mike Ravkin , Alex Kabansky , John de Larios
IPC分类号： B08B3/08
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on the surface of the substrate.
摘要翻译：提供了一种处理基板的方法。该方法包括使用接近头来产生受控弯液面。接近头部具有紧邻基板的表面的面，并且该面部包括基本平坦的表面。通过在邻近头部的表面形成的分立喷嘴将化学物质递送到弯液面来产生受控弯月面。该方法包括将接近头移动到衬底上，使得弯月面和衬底表面之间的接触区域从衬底上的第一位置移动到第二位置。靠近头部的移动导致在第一位置处在基底表面上留下化学残留物。化学残留物是粘附于基底表面的来自弯液面的化学物质层。该方法还包括将递送到邻近头部的化学物质量与从弯月面移除的化学物质的量进行平衡，使得弯月面维持化学品的基本上恒定的体积。从弯液面去除的化学物质的量至少包括留在衬底表面上的化学残留物。

2. 发明申请

US20080266367A1 SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE 有权
标题翻译：具有用于处理基板的控制菜单的单相位近端头
公开(公告)号：US20080266367A1
公开(公告)日：2008-10-30
申请号：US11774542
申请日：2007-07-06
申请人： Mike Ravkin , Alex Kabansky , John de Larios
发明人： Mike Ravkin , Alex Kabansky , John de Larios
IPC分类号： B41J2/175
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.
摘要翻译：描述用于处理衬底的系统。该系统包括接近头，机构和液体供应。邻近头部被配置为产生受控弯液面。具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。该运动导致薄层的液体在与弯液面接触之后保留在表面上。液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层残留在基材表面上的液体。

3. 发明授权

US08313580B2 Method for processing a substrate using a single phase proximity head having a controlled meniscus 有权
标题翻译：使用具有受控弯液面的单相接近头处理衬底的方法
公开(公告)号：US08313580B2
公开(公告)日：2012-11-20
申请号：US13184475
申请日：2011-07-15
申请人： Mike Ravkin , Alex Kabansky , John de Larios
发明人： Mike Ravkin , Alex Kabansky , John de Larios
IPC分类号： B08B3/04 , B08B5/04
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on the surface of the substrate.
摘要翻译：提供了一种处理基板的方法。该方法包括使用接近头来产生受控弯液面。接近头部具有紧邻基板的表面的面，并且该面部包括基本平坦的表面。通过在邻近头部的表面形成的分立喷嘴将化学物质递送到弯液面来产生受控弯月面。该方法包括将接近头移动到衬底上，使得弯月面和衬底表面之间的接触区域从衬底上的第一位置移动到第二位置。靠近头部的移动导致在第一位置处在基底表面上留下化学残留物。化学残留物是粘附于基底表面的来自弯液面的化学物质层。该方法还包括将递送到邻近头部的化学物质量与从弯月面移除的化学物质的量进行平衡，使得弯月面维持化学品的基本上恒定的体积。从弯液面去除的化学物质的量至少包括留在衬底表面上的化学残留物。

4. 发明授权

US07997288B2 Single phase proximity head having a controlled meniscus for treating a substrate 有权
标题翻译：具有用于处理基底的受控弯液面的单相接近头
公开(公告)号：US07997288B2
公开(公告)日：2011-08-16
申请号：US11774542
申请日：2007-07-06
申请人： Mike Ravkin , Alex Kabansky , John de Larios
发明人： Mike Ravkin , Alex Kabansky , John de Larios
IPC分类号： B08B3/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.
摘要翻译：描述用于处理衬底的系统。该系统包括接近头，机构和液体供应。邻近头部被配置为产生受控弯液面。具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。该运动导致薄层的液体在与弯液面接触之后保留在表面上。液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层残留在基材表面上的液体。

5. 发明申请

US20130061879A1 REDUCTION OF ENTRANCE AND EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS 有权
标题翻译：减少入口和退出标记由基板处理的菜单
公开(公告)号：US20130061879A1
公开(公告)日：2013-03-14
申请号：US13671459
申请日：2012-11-07
申请人： Robert O'Donnell , John de Larios , Mike Ravkin
发明人： Robert O'Donnell , John de Larios , Mike Ravkin
IPC分类号： B08B1/02 , B08B3/04
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.
摘要翻译：将衬底放置在载体的开口内的多个支撑销上，使得在衬底的径向周边和载体之间存在间隙。衬底和载体在线性方向上通过在上和下邻近头的相应面之间产生的弯液面。上和下邻近头中的每一个包括多个弯液面喷嘴，其构造成向液面供应液体。多个真空端口形成在每个上下接近头的相应面上，并且被布置成完全包围多个弯液面喷嘴。弯液面的液体从衬底的径向周边和载体之间的间隙排出，以便减小衬底上的入口或出口标记中的至少一个的尺寸和频率。

6. 发明授权

US07464719B2 Multi-menisci processing apparatus 失效
标题翻译：多功能加工设备
公开(公告)号：US07464719B2
公开(公告)日：2008-12-16
申请号：US11437891
申请日：2006-05-18
申请人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.
摘要翻译：提供了基板制备装置。该装置包括构造成安装在基板制造设备中的壳体。壳体包括用于制备晶片表面的歧管。歧管被配置为在歧管的第一部分中包括第一过程窗口。第一流体弯液面能够在第一过程窗口内被定义。还包括在歧管的第二部分中的第二处理窗口。能够在第二过程窗口内限定第二流体弯月面。臂与壳体一体化，并且臂联接到歧管，使得臂在操作期间能够将歧管定位在基板附近。因此，该装置提供了使用单个歧管在基板的表面上形成多重半月板。

7. 发明申请

US20050145267A1 Controls of ambient environment during wafer drying using proximity head 失效
标题翻译：使用接近头进行晶片干燥时的环境环境控制
公开(公告)号：US20050145267A1
公开(公告)日：2005-07-07
申请号：US10817398
申请日：2004-04-01
申请人： Mikhail Korolik , John de Larios , Mike Ravkin
发明人： Mikhail Korolik , John de Larios , Mike Ravkin
IPC分类号： H01L21/304 , B08B3/04 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.
摘要翻译：提供了一种用于处理衬底的方法，其包括产生流体弯月面以处理衬底并将流体弯月面施加到衬底的表面。该方法还包括减少流体在基板处理环境中的表面的蒸发。

8. 发明授权

US08623152B2 Reduction of entrance and exit marks left by a substrate-processing meniscus 有权
标题翻译：减少由基板处理半月板留下的入口和出口痕迹
公开(公告)号：US08623152B2
公开(公告)日：2014-01-07
申请号：US13671459
申请日：2012-11-07
申请人： Robert O'Donnell , Mike Ravkin , John de Larios
发明人： Robert O'Donnell , Mike Ravkin , John de Larios
IPC分类号： B08B1/02
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A substrate is moved in a linear direction simultaneously between a processing face of an upper proximity head and a processing face of a lower proximity head. As the substrate is moved, a first meniscus of processing liquid is generated between the processing face of the upper proximity head and a top surface of the substrate, and a second meniscus of processing liquid is generated between the processing face of the lower proximity head and a bottom surface of the substrate. The first meniscus has a meniscus protrusion extending in the linear direction in which the substrate is moved and positioned on a trailing side of the first meniscus relative to the linear direction in which the substrate is moved. The meniscus protrusion is centered on the substrate relative to a diameter of the substrate as measured perpendicular to the linear direction in which the substrate is moved.
摘要翻译：基板在上接近头的处理面和下邻近头的处理面之间同时沿线性方向移动。当衬底移动时，在上接近头的处理面和衬底的上表面之间产生处理液体的第一弯月面，并且在下邻近头的处理面和衬底的底表面。第一弯液面具有弯曲面突起，其沿着线性方向延伸，在该方向上衬底相对于衬底移动的线性方向移动并定位在第一弯液面的后侧。弯月面突起相对于垂直于衬底移动的线性方向测量的基底的直径在基底上居中。

9. 发明授权

US08317932B2 Reduction of entrance and exit marks left by a substrate-processing meniscus 有权
标题翻译：减少由基板处理半月板留下的入口和出口痕迹
公开(公告)号：US08317932B2
公开(公告)日：2012-11-27
申请号：US12725422
申请日：2010-03-16
申请人： Robert O'Donnell , John de Larios , Mike Ravkin
发明人： Robert O'Donnell , John de Larios , Mike Ravkin
IPC分类号： B08B5/04
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.
摘要翻译：将衬底放置在载体的开口内的多个支撑销上，使得在衬底的径向周边和载体之间存在间隙。衬底和载体在线性方向上通过在上和下邻近头的相应面之间产生的弯液面。上和下邻近头中的每一个包括多个弯液面喷嘴，其构造成向液面供应液体。多个真空端口形成在每个上下接近头的相应面上，并且被布置成完全包围多个弯液面喷嘴。弯液面的液体从衬底的径向周边和载体之间的间隙排出，以便减小衬底上的入口或出口标记中的至少一个的尺寸和频率。

10. 发明申请

US20070218653A1 METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
标题翻译：使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离
公开(公告)号：US20070218653A1
公开(公告)日：2007-09-20
申请号：US11750960
申请日：2007-05-18
申请人： John de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James Garcia
发明人： John de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James Garcia
IPC分类号： H01L21/02
CPC分类号： H01L21/67051 , B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.
摘要翻译：提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了受控半月板所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

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