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1. 发明申请

US20090090452A1 PROCESS FOR PRODUCING NONFLAT CERAMIC SUBSTRATE 审中-公开
标题翻译：生产非氧化陶瓷基材的方法
公开(公告)号：US20090090452A1
公开(公告)日：2009-04-09
申请号：US11994371
申请日：2006-06-26
申请人： Takayuki Naba , Michiyasu Komatsu , Takao Shirai , Noritaka Nakayama , Mitsuhiro Okamoto
发明人： Takayuki Naba , Michiyasu Komatsu , Takao Shirai , Noritaka Nakayama , Mitsuhiro Okamoto
IPC分类号： C04B35/64 , C04B33/32 , B32B38/00 , B05D3/02
CPC分类号： C04B35/622 , C04B33/32 , H01L21/4807 , H01L21/4878 , H01L23/13 , H01L2924/0002 , H05K1/0284 , H05K1/0306 , H05K1/183 , H05K3/0044 , H05K2201/09045 , H05K2201/09845 , H05K2203/025 , H01L2924/00
摘要： In the production of a ceramic substrate (1) with a level difference (3), a surface of a fired substrate obtained by firing of a ceramic green sheet is honed to form the level difference (3). Alternatively, a level difference is first formed through processing of a ceramic green sheet, laminating of a ceramic green sheet, or the like, and thereafter the ceramic green sheet is fired to obtain a fired substrate (ceramic substrate) (1) with a level difference (3).
摘要翻译：在制造具有水平差（3）的陶瓷基板（1）的情况下，通过烧成陶瓷生片而得到的烧成基板的表面被珩磨以形成液面差（3）。或者，首先通过陶瓷生片的加工，陶瓷生片的层叠等形成水平差，然后烧成陶瓷生片以获得具有水平的烧制基板（陶瓷基板）（1）差异（3）。

2. 发明授权

US5767028A Aluminum nitride sintered body and method for manufacturing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5767028A
公开(公告)日：1998-06-16
申请号：US687445
申请日：1996-09-18
申请人： Michiyasu Komatsu , Takao Shirai
发明人： Michiyasu Komatsu , Takao Shirai
IPC分类号： C04B35/581 , H01L23/15 , H01L23/373 , F27B9/04 , F27D7/00
CPC分类号： C04B35/581 , H01L23/15 , H01L23/3731 , H01L2924/0002
摘要： The aluminum nitride sintered body according to the present invention comprises 1-10 % by weight of at least one element selected from a group consisting of a group IIIa element listed in periodic table, Ca, Sr and Ba in terms of the amount of an oxide thereof, 0.2-2.0 % by weight of boron carbide, at most 0.2 % by weight of at least one silicon compound selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4, SiC, Si.sub.2 N.sub.2 O,.beta.-Sialon, .alpha.-Sialon and poly-type aluminum nitride (Al--Si--O--N) in terms of the amount of Si component, and the balance of aluminum nitride. According to the foregoing structure, there is available an AlN sintered body in which grain growth of the AlN sintered body is inhibited; the sintered body structure is fined; coupling of grain boundaries and crystal grains is intensified, thereby improving both strength and fracture toughness of the sintered body and increasing mechanical strength and fracture toughness without impairing heat radiation characteristics intrinsic to aluminum nitride.
摘要翻译： PCT No.PCT / JP96 / 01808 Sec。 371日期1996年9月18日 102（e）1996年9月18日PCT PCT 1996年6月28日PCT公布。出版物WO97 / 03031 日本1997年1月30日根据本发明的氮化铝烧结体包含1-10重量％的选自元素周期表中的IIIa族元素，Ca，Sr和Ba中的至少一种元素，以其氧化物的量为0.2-2.0重量％的碳化硼，至多0.2重量％的至少一种选自SiO 2，Si 3 N 4，SiC，Si 2 N 2 O，β-赛隆，α-赛隆的硅化合物和多晶型氮化铝（Al-Si-ON）的Si成分量，余量为氮化铝。根据上述结构，可以获得AlN烧结体，其中AlN烧结体的晶粒生长被抑制; 烧结体结构被罚款; 晶界和晶粒的耦合增强，从而提高了烧结体的强度和断裂韧性，提高了机械强度和断裂韧性，而不损害氮化铝固有的热辐射特性。

3. 发明授权

US5508240A Aluminum nitride sintered body and method for manufacturing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5508240A
公开(公告)日：1996-04-16
申请号：US246763
申请日：1994-05-20
申请人： Michiyasu Komatsu , Takao Shirai
发明人： Michiyasu Komatsu , Takao Shirai
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body containing 1 to 10% by weight of an oxide of at least one element selected from a group consisting of a group IIIa element, Ca, Sr and Ba, the concentration of a Si component in the sintered body is 0.01 to 0.2% by weight and three-point bending strength is 490 MPa or more. The sintered body is characterized in that a crystal structure composed of aluminum nitride crystal grains is formed, the fracture toughness is 2.8 MN/m.sup.3/2 or more, the three-point bending strength is 490 MPa or more and the thermal conductivity is 150 W/m.multidot.k or more. In the crystal structure, the distribution of the crystal grain distribution is adequately adjusted. The growth of the AlN sintered body is restricted, thus the structure of the sintered body is fined, and the distribution of the crystal grain size is controlled adequately so that the strength and the fracture toughness of the sintered body are improved. Moreover, the mechanical Strength and fracture toughness are improved without impairing the heat radiating characteristics of the aluminum nitride.
摘要翻译：含有1〜10重量％的选自由IIIa族元素，Ca，Sr和Ba组成的组中的至少一种元素的氧化物的氮化铝烧结体，烧结体中Si成分的浓度为0.01〜 0.2重量％，三点弯曲强度为490MPa以上。烧结体的特征在于，形成由氮化铝晶粒构成的晶体结构，断裂韧性为2.8MN / m 3/2以上，三点弯曲强度为490MPa以上，导热系数为150W / mxk以上。在晶体结构中，适当调整晶粒分布的分布。 AlN烧结体的生长受到限制，因此烧结体的结构被精细化，并且适当地控制晶粒尺寸的分布，从而提高了烧结体的强度和断裂韧性。此外，机械强度和断裂韧性得到改善，而不损害氮化铝的散热特性。

4. 发明授权

US08133830B2 Silicon nitride sintered compact and sliding member using the same 有权
标题翻译：氮化硅烧结体和使用其的滑动部件
公开(公告)号：US08133830B2
公开(公告)日：2012-03-13
申请号：US12529268
申请日：2008-03-11
申请人： Minoru Takao , Michiyasu Komatsu
发明人： Minoru Takao , Michiyasu Komatsu
IPC分类号： C04B35/587
CPC分类号： F16C33/32 , C04B35/584 , C04B35/6261 , C04B35/6455 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3256 , C04B2235/3258 , C04B2235/3873 , C04B2235/3895 , C04B2235/402 , C04B2235/404 , C04B2235/5445 , C04B2235/6567 , C04B2235/77 , C04B2235/786 , C04B2235/788 , C04B2235/96 , C22C29/16
摘要： A silicon nitride sintered compact contains silicon nitride grains, and a sintering aid component in a range of 2 to 15 mass %. The silicon nitride grains include needle crystal grains each having a long diameter L of 10 μm or less and a ratio (L/S) of the long diameter L to a short diameter S of 5 or more, by 50% or more in area ratio in a crystalline structure of the silicon nitride sintered compact. The silicon nitride sintered compact is used as a sliding member like a bearing ball (2).
摘要翻译：氮化硅烧结体包含氮化硅晶粒和2〜15质量％的烧结助剂成分。氮化硅晶粒包括长径L为10μm以下的针状晶粒，长径L与短径S的比（L / S）为5以上，面积比为50％以上在氮化硅烧结体的晶体结构中。氮化硅烧结体用作如轴承球（2）的滑动构件。

5. 发明申请

US20100054652A1 SILICON NITRIDE SINTERED COMPACT AND SLIDING MEMBER USING THE SAME 有权
标题翻译：硅氮化物烧结紧固件和使用其的滑动构件
公开(公告)号：US20100054652A1
公开(公告)日：2010-03-04
申请号：US12529268
申请日：2008-03-11
申请人： Minoru Takao , Michiyasu Komatsu
发明人： Minoru Takao , Michiyasu Komatsu
IPC分类号： F16C19/00 , C04B35/586
CPC分类号： F16C33/32 , C04B35/584 , C04B35/6261 , C04B35/6455 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3256 , C04B2235/3258 , C04B2235/3873 , C04B2235/3895 , C04B2235/402 , C04B2235/404 , C04B2235/5445 , C04B2235/6567 , C04B2235/77 , C04B2235/786 , C04B2235/788 , C04B2235/96 , C22C29/16
摘要： A silicon nitride sintered compact contains silicon nitride grains, and a sintering aid component in a range of 2 to 15 mass %. The silicon nitride grains include needle crystal grains each having a long diameter L of 10 μm or less and a ratio (L/S) of the long diameter L to a short diameter S of 5 or more, by 50% or more in area ratio in a crystalline structure of the silicon nitride sintered compact. The silicon nitride sintered compact is used as a sliding member like a bearing ball (2).
摘要翻译：氮化硅烧结体包含氮化硅晶粒和2〜15质量％的烧结助剂成分。氮化硅晶粒包括长径L为10μm以下的针状晶粒，长径L与短径S的比（L / S）为5以上，面积比为50％以上在氮化硅烧结体的晶体结构中。氮化硅烧结体用作如轴承球（2）的滑动构件。

6. 发明授权

US07662736B2 High thermally conductive aluminum nitride sintered product 有权
标题翻译：高导热氮化铝烧结产品
公开(公告)号：US07662736B2
公开(公告)日：2010-02-16
申请号：US12272468
申请日：2008-11-17
申请人： Michiyasu Komatsu , Kimiya Miyashita
发明人： Michiyasu Komatsu , Kimiya Miyashita
IPC分类号： C04B35/581
CPC分类号： C04B35/638 , C04B35/581 , C04B35/62675 , C04B35/6303 , C04B2235/3222 , C04B2235/3225 , C04B2235/5436 , C04B2235/602 , C04B2235/6025 , C04B2235/652 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/721 , C04B2235/723 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , Y10T428/268
摘要： The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of aluminum nitride (101 plane) is 0.002 to 0.03. According to the foregoing structure, there can be provided an aluminum nitride sintered body having a high thermal conductivity and excellent heat radiating property.
摘要翻译：本发明的高导热性氮化铝烧结体的导热系数为220W / m·K以上，并且三点弯曲强度为250MPa以上; 其中Al 2 Y 4 O 9（201平面）的X射线衍射强度（IAl2Y4O9）与氮化铝（101平面）的X射线衍射强度（IAlN）的比（IAl2Y4O9 / IA1N）为0.002〜0.03。根据上述结构，可以提供具有高导热性和优异散热性能的氮化铝烧结体。

7. 发明申请

US20070161493A1 Wear resistant member comprised of silicon nitride and process for producing the same 有权
标题翻译：由氮化硅构成的耐磨构件及其制造方法
公开(公告)号：US20070161493A1
公开(公告)日：2007-07-12
申请号：US10572749
申请日：2004-09-27
申请人： Michiyasu Komatsu , Minoru Takao
发明人： Michiyasu Komatsu , Minoru Takao
IPC分类号： C04B35/584
CPC分类号： C04B35/64 , C04B35/584 , C04B35/5935 , C04B35/63 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3241 , C04B2235/3244 , C04B2235/3826 , C04B2235/3834 , C04B2235/3839 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/5445 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/94 , C04B2235/96 , C04B2235/963 , F16C33/30 , F16C33/62
摘要： A silicon nitride abrasion resistant member is formed of silicon nitride sintered body containing 2% to 4% by mass of a rare earth element in terms of oxide thereof as a sintering aid, 2% to 6% by mass of an Al component in terms of oxide thereof, and 2% to 7% by mass of silicon carbide. The silicon nitride sintered body has a porosity of 1% or less, a three-point bending strength of 800 to 1000 MPa, and a fracture toughness of 5.7 to 6.5 MPa·m1/2. According to this structure, even when an inexpensive silicon nitride powder manufactured by metal nitriding method is used, there can be provided a silicon nitride abrasion resistant member having a mechanical strength, high abrasion resistance, and a rolling life, equal to or higher than those of conventional silicon nitride sintered bodies, and excellent workability, and a method for manufacturing the member can be provided.
摘要翻译：氮化硅耐磨构件由含有2质量％至4质量％的稀土元素的氧化物作为烧结助剂的氮化硅烧结体形成，以Al 2 O 3为原料的2质量％〜6质量％的Al成分氧化物，2质量％〜7质量％的碳化硅。氮化硅烧结体的孔隙率为1％以下，三点弯曲强度为800〜1000MPa，断裂韧性为5.7〜6.5MPa·m 1/2。根据该结构，即使使用通过金属氮化法制造的便宜的氮化硅粉末，也可以提供具有机械强度，高耐磨性和滚动寿命的氮化硅耐磨性构件，等于或高于的常规氮化硅烧结体，并且具有优异的可加工性，并且可以提供该部件的制造方法。

8. 发明授权

US5744410A High thermal conductive silicon nitride sintered body, method of producing the same and press-contacted body 失效
标题翻译：高导热氮化硅烧结体，其制造方法和压接体
公开(公告)号：US5744410A
公开(公告)日：1998-04-28
申请号：US700358
申请日：1996-10-04
申请人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
发明人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
IPC分类号： C04B35/584 , C04B35/593 , H01L23/15
CPC分类号： H01L24/33 , C04B35/584 , C04B35/5935 , H01L23/15 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01064 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01105 , H01L2924/04953 , H01L2924/1301 , H01L2924/13034 , H01L2924/14 , H01L2924/181 , H01L2924/3025
摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt % to at most 17.5 wt % of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt % of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt % of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt % of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a .beta.-type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m.multidot.K and a three-point bending strength of at least 650 MPa at a room temperature.
摘要翻译： PCT No.PCT / JP96 / 01559 Sec。 371日期：1996年10月4日 102（e）日期1996年10月4日PCT PCT 1996年6月7日PCT公布。出版物WO97 / 00837 日本1997年1月9日本发明的高导热性氮化硅烧结体的特征在于，如果需要，以其氧化物的量含有大于7.5重量％至最多17.5重量％的稀土元素，如果需要，大多数1.0重量％的氮化铝和氧化铝中的至少一种，如果需要，0.1-3.0重量％的选自Ti，Zr，Hf，V的氧化物，碳化物，氮化物，硅化物和硼化物中的至少一种化合物，Nb，Ta，Cr，Mo和W以及0.3重量％以下的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B作为杂质阳离子元素， β型氮化硅晶体和晶界相。所述烧结体的晶界相与晶界相的结晶化合物相的比例为至少20％，孔隙率为2.5体积％以下，导热系数为80W / m×K以上，在室温下三点弯曲强度至少为650MPa。

9. 发明授权

US5635431A Silicon nitride-based sinter 失效
标题翻译：氮化硅基烧结矿
公开(公告)号：US5635431A
公开(公告)日：1997-06-03
申请号：US327777
申请日：1994-10-24
申请人： Isao Ikeda , Michiyasu Komatsu
发明人： Isao Ikeda , Michiyasu Komatsu
IPC分类号： C04B35/584 , C04B35/587 , C04B35/596
CPC分类号： C04B35/5935 , C04B35/593 , C04B2235/3206 , C04B2235/3222 , C04B2235/3232 , C04B2235/3244 , C04B2235/3258 , C04B2235/3418 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3878 , C04B2235/5445 , C04B2235/72 , C04B2235/77 , C04B2235/96 , C04B2235/9692
摘要： A silicon nitride-based sinter contains as component elements thereof magnesium in the range of from 0.1 to 1.5% by weight, aluminum in the range of from 0.1 to 3.5% by weight, carbon in the range of from 0.01 to 6% by weight, and oxygen in the range of from 0.2 to 5% by weight, the balance consisting essentially of silicon, nitrogen, and impurities. This sinter is obtained by sintering a ceramic mixture comprising 0.5 to 6% by weight of a MgO.Al.sub.2 O.sub.3 spinel structure, 0.1 to 20% by weight of silicon carbide, not more than 1% by weight of silicon oxide, and the balance substantially of silicon nitride and impurities. Owing to the incorporation of the MgO.Al.sub.2 O.sub.3 spinel structure and silicon carbide, the produced silicon nitride-based ceramic acquires an outstanding ability to resist corrosion caused by such chemicals as acids and alkalis (resistance to chemicals) without impairing such inherent characteristic properties of silicon nitride as strength, resistance to abrasion, and resistance to heat.
摘要翻译：氮化硅系烧结体含有0.1〜1.5重量％的镁，0.1〜3.5重量％的铝，0.01〜6重量％的碳，和氧在0.2至5重量％的范围内，余量基本上由硅，氮和杂质组成。该烧结体是通过烧结含有0.5〜6重量％的MgO·Al 2 O 3尖晶石结构，0.1〜20重量％的碳化硅，1重量％以下的氧化硅，和余量基本上氮化硅和杂质。由于掺入了MgO·Al 2 O 3尖晶石结构和碳化硅，所生产的氮化硅基陶瓷具有突出的耐酸性和碱性化学物质（耐化学物质）引起的腐蚀的能力，而不损害硅的固有特性氮化物作为强度，耐磨性和耐热性。

10. 发明授权

US4693857A Method for production of sintered article of silicon nitride 失效
标题翻译：氮化硅烧结体的制造方法
公开(公告)号：US4693857A
公开(公告)日：1987-09-15
申请号：US716212
申请日：1985-03-26
申请人： Katsutoshi Komeya , Michiyasu Komatsu
发明人： Katsutoshi Komeya , Michiyasu Komatsu
IPC分类号： C04B35/58 , C04B35/584 , C04B35/597 , C04B33/32
CPC分类号： C04B35/584 , C04B35/597
摘要： As the aluminum nitride component of a sintering aid for powdered silicon nitride, either a spinel type compound having oxygen dissolved in aluminum nitride to form a solid solution or a poly-type aluminum nitride is used. Since the compound is highly stable in water, it can be effectively used in the form of an aqueous slurry mixture. As the sintering aid, this compound is used as effectively as aluminum nitride.
摘要翻译：作为用于粉末状氮化硅的烧结助剂的氮化铝组分，使用具有溶解在氮化铝中的氧以形成固溶体的尖晶石型化合物或多型氮化铝。由于该化合物在水中高度稳定，因此可以以含水浆料混合物的形式有效地使用。作为烧结助剂，该化合物与氮化铝一样有效地使用。

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