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1. 发明授权

US5744410A High thermal conductive silicon nitride sintered body, method of producing the same and press-contacted body 失效
标题翻译：高导热氮化硅烧结体，其制造方法和压接体
公开(公告)号：US5744410A
公开(公告)日：1998-04-28
申请号：US700358
申请日：1996-10-04
申请人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
发明人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
IPC分类号： C04B35/584 , C04B35/593 , H01L23/15
CPC分类号： H01L24/33 , C04B35/584 , C04B35/5935 , H01L23/15 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01064 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01105 , H01L2924/04953 , H01L2924/1301 , H01L2924/13034 , H01L2924/14 , H01L2924/181 , H01L2924/3025
摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt % to at most 17.5 wt % of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt % of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt % of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt % of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a .beta.-type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m.multidot.K and a three-point bending strength of at least 650 MPa at a room temperature.
摘要翻译： PCT No.PCT / JP96 / 01559 Sec。 371日期：1996年10月4日 102（e）日期1996年10月4日PCT PCT 1996年6月7日PCT公布。出版物WO97 / 00837 日本1997年1月9日本发明的高导热性氮化硅烧结体的特征在于，如果需要，以其氧化物的量含有大于7.5重量％至最多17.5重量％的稀土元素，如果需要，大多数1.0重量％的氮化铝和氧化铝中的至少一种，如果需要，0.1-3.0重量％的选自Ti，Zr，Hf，V的氧化物，碳化物，氮化物，硅化物和硼化物中的至少一种化合物，Nb，Ta，Cr，Mo和W以及0.3重量％以下的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B作为杂质阳离子元素， β型氮化硅晶体和晶界相。所述烧结体的晶界相与晶界相的结晶化合物相的比例为至少20％，孔隙率为2.5体积％以下，导热系数为80W / m×K以上，在室温下三点弯曲强度至少为650MPa。

2. 发明授权

US5998000A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US5998000A
公开(公告)日：1999-12-07
申请号：US970813
申请日：1997-11-14
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B3/27
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译：本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高导热氮化硅衬底的厚度Ds 并且金属电路板的厚度DM满足关系式Ds 2DM。氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

3. 发明授权

US5928768A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US5928768A
公开(公告)日：1999-07-27
申请号：US666467
申请日：1996-09-04
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B9/00
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译： PCT No.PCT / JP96 / 00723 Sec。 371日期1996年9月4日 102（e）1996年9月4日PCT PCT 1996年3月19日PCT公布。 WO96 / 29736 PCT公开号日期1996年9月26日本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高的导热氮化硅衬底和金属电路板的厚度DM满足关系式Ds 2DM。氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

4. 发明授权

US6040039A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US6040039A
公开(公告)日：2000-03-21
申请号：US970811
申请日：1997-11-14
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B3/27
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.S of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.S .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译：本发明提供了一种氮化硅电路板，其中金属电路板与具有不小于60W / m K的热导率的高导热氮化硅衬底接合，其中高导热氮化硅衬底的厚度DS 并且金属电路板的厚度DM满足关系式DS

5. 发明授权

US06232657B1 Silicon nitride circuit board and semiconductor module 失效
标题翻译：氮化硅电路板和半导体模块
公开(公告)号：US06232657B1
公开(公告)日：2001-05-15
申请号：US09051477
申请日：1998-04-17
申请人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
发明人： Hiroshi Komorita , Kazuo Ikeda , Michiyasu Komatsu , Yoshitoshi Sato , Takayuki Naba
IPC分类号： H01L23053
CPC分类号： H01L23/15 , C04B35/584 , C04B37/021 , C04B37/025 , C04B37/026 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3813 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3865 , C04B2235/3878 , C04B2235/3886 , C04B2235/3891 , C04B2235/3895 , C04B2235/5445 , C04B2235/6565 , C04B2235/72 , C04B2235/77 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/062 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/407 , C04B2237/54 , C04B2237/68 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/86 , H01L23/3735 , H01L23/4006 , H01L24/32 , H01L24/48 , H01L2224/32225 , H01L2224/48227 , H01L2224/48472 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01039 , H01L2924/01057 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： There is provided a semiconductor module which comprises a high thermal conductive silicon nitride substrate 10 having a thermal conductivity of 60 w/m·k or more, a semiconductor element 7 mounted on this high thermal conductive silicon nitride substrate 10, metal circuit plates 3 which are bonded on the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate 10 and single metal plate 4a which is bonded to a side opposing to the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate and is bonded on an apparatus casing 9 or a mounting board. By this constitution, there can be provided a semiconductor module having a simple structure, which can be miniaturized, and having an improved structure strength and an excellent heat cycle resistance property without requiring a heat sink plate or the like.
摘要翻译：提供了一种半导体模块，其包括导热率为60w / mk以上的高导热氮化硅衬底10，安装在该高导热氮化硅衬底10上的半导体元件7，金属电路板3，在该高导热氮化硅衬底10的半导体元件安装侧和与该高导热氮化硅衬底的与半导体元件安装侧相对的一侧接合的单金属板4a并且接合在设备壳体 9或安装板。通过这种结构，可以提供一种具有简单结构的半导体模块，其可以小型化，并且具有改进的结构强度和优异的耐热循环性能，而不需要散热板等。

6. 发明授权

US5328751A Ceramic circuit board with a curved lead terminal 失效
标题翻译：陶瓷电路板
公开(公告)号：US5328751A
公开(公告)日：1994-07-12
申请号：US911713
申请日：1992-07-10
申请人： Hiroshi Komorita , Nobuyuki Mizunoya , Kazuo Matsumura , Kazuo Ikeda , Takayuki Naba , Tadashi Tanaka
发明人： Hiroshi Komorita , Nobuyuki Mizunoya , Kazuo Matsumura , Kazuo Ikeda , Takayuki Naba , Tadashi Tanaka
IPC分类号： H01L23/498 , H05K1/02 , H05K1/03 , H05K3/38 , H05K3/40 , B32B9/00
CPC分类号： H01L23/49861 , H05K1/0271 , H05K3/4092 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/10253 , H01L2924/12044 , H01L2924/19107 , H05K1/0306 , H05K2201/0355 , H05K2201/098 , H05K3/38 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a ceramic circuit board comprising: a ceramic base board; a metal circuit plate integrally bonded onto a surface of the ceramic base board; a terminal connecting port formed by bending a part of the metal circuit plate for connecting a terminal of a module, the terminal connecting port being formed so that the terminal connecting port is raised from a surface of the ceramic base board, and a curvature radius of the bent portion provided on the terminal connecting port is set to 0.2 mm or more. An empty communication hole such as groove or through hole may also be formed at a bonding surface between the metal circuit plate and the ceramic base board.
摘要翻译：本发明提供一种陶瓷电路板，包括：陶瓷基板; 一体地结合到陶瓷基板的表面上的金属电路板; 端子连接端口，其通过弯曲用于连接模块的端子的金属电路板的一部分而形成，所述端子连接端口形成为使得端子连接端口从陶瓷基板的表面升高，并且曲率半径设置在端子连接口上的弯曲部分设定为0.2mm以上。还可以在金属电路板和陶瓷基板之间的接合表面上形成诸如槽或通孔的空的连通孔。

7. 发明授权

US5178647A Wear-resistant member 失效
标题翻译：耐磨件
公开(公告)号：US5178647A
公开(公告)日：1993-01-12
申请号：US762081
申请日：1991-09-19
申请人： Michiyasu Komatsu , Tadashi Miyano , Syoji Okada , Shun-ichiro Tanaka , Kazuo Ikeda , Akio Sayano
发明人： Michiyasu Komatsu , Tadashi Miyano , Syoji Okada , Shun-ichiro Tanaka , Kazuo Ikeda , Akio Sayano
IPC分类号： C04B35/584 , C04B35/593 , C04B37/02
CPC分类号： C04B35/645 , C04B35/584 , C04B35/593 , C04B35/638 , C04B37/021 , C04B37/026 , C04B2235/3217 , C04B2235/3225 , C04B2235/3839 , C04B2235/3865 , C04B2235/3869 , C04B2235/3878 , C04B2235/3891 , C04B2235/767 , C04B2235/80 , C04B2235/85 , C04B2235/95 , C04B2235/96 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/368 , C04B2237/40 , C04B2237/407 , C04B2237/72 , C04B2237/76 , Y10T428/12576 , Y10T428/12806
摘要： A wear-resistant member formed comprises a sintered ceramic body essentially consisting of 0.1 to 15% by weight of at least one material selected from the group comprising molybdenum carbide, niobium carbide, hafnium carbide, tantalum carbide, tungsten carbide, molybdenum silicide, niobium silicide, hafnium silicide, tantalum silicide, tungsten silicide, molybdenum boride, niobium boride, hafnium boride, tantalum boride, and tungsten boride, 2 to 20% by weight of a boundary phase selected from the group consisting of Si--Y--Al--O--N and Si--Y--Al--O--N--B, and a balance of .beta.-silicon nitride. The wear-resistant member preferably has a metal member bonded to the sintered ceramic body. The wear-resistant member can perform high-load work such as high-speed cutting.
摘要翻译：形成的耐磨构件包括基本上由0.1至15重量％的至少一种选自碳化钼，碳化铌，碳化铪，碳化钽，碳化钨，硅化钼，硅化铌的材料组成的烧结陶瓷体，硅化铪，硅化钽，硅化钨，硼化钼，硼化铌，硼化铪，硼化硼和硼化钨，2〜20重量％的选自Si-Y-Al-ON和 Si-Y-Al-ONB，其余为β-氮化硅。耐磨构件优选具有结合到烧结陶瓷体的金属构件。耐磨构件可以进行高速切割等高负载工作。

8. 发明申请

US20080038491A1 Method for Producing Ink Jet Recording Sheet and Ink Jet Recording Sheet 审中-公开
标题翻译：生产喷墨记录纸和喷墨记录纸的方法
公开(公告)号：US20080038491A1
公开(公告)日：2008-02-14
申请号：US11574970
申请日：2005-09-08
申请人： Kazuo Ikeda , Motoko Hiraki , Shinichi Asano , Tomoyuki Hisaoka , Nobuhisa Dano , Hiroyuki Nemoto
发明人： Kazuo Ikeda , Motoko Hiraki , Shinichi Asano , Tomoyuki Hisaoka , Nobuhisa Dano , Hiroyuki Nemoto
IPC分类号： B41M5/50 , B41J2/01 , B41M5/52 , B41M5/00
CPC分类号： B41M5/506 , B41M5/52 , B41M5/5218 , B41M5/5245 , B41M5/5254 , B41M2205/12 , B41M2205/38
摘要： The present invention relates to a method for producing an ink jet recording sheet characterized by including: applying a coating liquid containing at least both a temperature-sensitive polymeric compound and a pigment the temperature-sensitive polymeric compound having a temperature region where hydrophobicity is exhibited and a temperature region where hydrophilicity is exhibited, the coating liquid becoming more viscous or gelating in the temperature region where hydrophilicity is exhibited, onto either an air-permeable support or at least one undercoating layer provided on an air-permeable support in the temperature region where hydrophobicity is exhibited, to form a coating layer of the coating liquid, bringing the temperature thereof to the temperature region where the temperature-sensitive polymeric compound exhibits hydrophilicity to increase the viscosity of the coating layer or gelate the coating layer, then applying a wetting liquid containing an ink fixing agent (and colloidal particles) onto the viscosity-increased or gelated coating layer, followed by bringing the assembly into contact and press to a heated specular surface and drying to form an ink-receptive layer.
摘要翻译：本发明涉及一种喷墨记录纸的制造方法，其特征在于，包括：涂布至少含有温度敏感性高分子化合物和颜料的涂布液，所述涂料具有表现出疏水性的温度区域的温度敏感性高分子化合物，以及显示亲水性的温度区域，在显示亲水性的温度区域中，涂布液变得更粘稠或凝胶化，在设置在透气性支持体上的透气性载体或至少一层底涂层上，表现出疏水性，形成涂布液的涂层，使其温度达到温度敏感性聚合物表现出亲水性的温度区域，以增加涂层的粘度或使涂层凝胶化，然后涂布润湿液体含有墨水固定剂（和胶体） dal颗粒）到粘度增加或凝胶化的涂层上，随后使组件接触并压制成加热的镜面，并干燥以形成油墨接受层。

9. 发明授权

US07064471B2 Surface acoustic wave device, method of manufacturing the device, and electronic component using the device and method 失效
标题翻译：表面声波装置，制造装置的方法以及使用该装置和方法的电子部件
公开(公告)号：US07064471B2
公开(公告)日：2006-06-20
申请号：US10362209
申请日：2002-06-18
申请人： Kazuo Ikeda , Kazunori Nishimura , Yasumichi Murase
发明人： Kazuo Ikeda , Kazunori Nishimura , Yasumichi Murase
IPC分类号： H03H9/25
CPC分类号： H03H9/6473 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02913 , H03H9/02921 , H03H9/059 , H03H9/1071 , H03H9/25 , H03H9/6433 , H03H9/6463 , H01L2224/05624 , H01L2924/00014 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671
摘要： A surface acoustic wave (SAW) device includes a comb-shaped electrode 2, a reflector 3 and a plurality of auxiliary electrodes 6a and 6b for surrounding the comb-shaped electrode 2 and the reflector 3, which are electrically independent of each other and have different widths locally. The SAW device is capable of efficiently and electrically uniformizing electric charge generated by pyroelectric property of a piezoelectric substrate 1.
摘要翻译：表面声波（SAW）器件包括梳状电极2，反射器3和用于围绕彼此电独立的梳状电极2和反射器3的多个辅助电极6a和6b 并且在本地具有不同的宽度。 SAW器件能够使由压电基片1的热电性产生的电荷有效地并且均匀化。

10. 外观设计

USD403322S Console 失效
公开(公告)号：USD403322S
公开(公告)日：1998-12-29
申请号：US76771
申请日：1997-09-23
申请人： Mitsuhiro Umezu , Kazuo Ikeda , Masakatsu Takizawa , Toru Ichihashi
设计人： Mitsuhiro Umezu , Kazuo Ikeda , Masakatsu Takizawa , Toru Ichihashi

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