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    • 1. 发明授权
    • Film-like composite structure and method of manufacture thereof
    • 薄膜状复合结构体及其制造方法
    • US06452244B1
    • 2002-09-17
    • US09319210
    • 1999-08-10
    • Tadao MiuraTouru SumiyaShun-ichiro Tanaka
    • Tadao MiuraTouru SumiyaShun-ichiro Tanaka
    • H01L27095
    • H01L29/872H01L29/45H01L29/452H01L29/456H01L29/47H01L29/475
    • On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.
    • 在由半导体单晶等的基板构成的半导体层1上形成厚度为20nm以下的金属层2。 金属层2包括与半导体层1直接接触的第一区域A和由绝缘体,不同于金属层2的金属或不同于半导体的半导体的中间层3插入的第二区域B 层1在半导体1和金属层2之间,厚度为10nm以下。 第一个区域和第二个区域的肖特基电流在其肖特基势垒高度方面是不同的。 各区域A和B中的任一个具有纳米级的面积,并且各区域A和B中的各个界面分别具有基本均匀的势垒。 这种膜状复合结构有助于纳米级的微小半导体器件和新功能器件的实现。
    • 8. 发明授权
    • Ultrafine Al particle and production method thereof
    • 超细Al颗粒及其制备方法
    • US6033783A
    • 2000-03-07
    • US861821
    • 1997-05-23
    • Shun-ichiro TanakaBingShe Xu
    • Shun-ichiro TanakaBingShe Xu
    • B22F9/04B22F9/30C22C21/00C23C14/14C23C14/30C30B23/02B32B5/16
    • C23C14/30B22F9/30C23C14/14C30B23/002C30B29/02B22F2999/00Y10T428/30
    • An ultrafine Al particle consists of an Al multiply twinned particle. The Al multiply twinned particle has a decahedron structure surrounded by {111} planes. The Al multiply twinned decahedral particle has a diameter of 10 to 30 nm. Such an ultrafine Al particle consisting of the Al multiply twinned decahedral particle is obtained as follows. A metastable Al oxide particle is placed on an amorphous carbon substrate having the reduction effect. Then the electron beam is irradiated to the metastable Al oxide particle placed on the amorphous carbon substrate in the vacuum atmosphere. From the metastable Al oxide particle, Al atoms or Al clusters are emitted and adsorbed to the substrate. By adjusting the electron beam intensity so that the ultrafine Al particle in the above procedure has a diameter from 10 to 30 nm, the Al multiply twinned particle having a decahedron is obtained.
    • 超细Al颗粒由Al多重孪晶颗粒组成。 Al多重孪晶颗粒具有被{111}平面包围的十面体结构。 Al多重双晶十面体粒子的直径为10〜30nm。 由Al多重双晶十面体粒子组成的这种超细Al粒子如下获得。 将亚稳态Al氧化物颗粒放置在具有还原效果的非晶碳衬底上。 然后在真空气氛中将电子束照射到放置在非晶碳基板上的亚稳态Al氧化物颗粒。 从亚稳态Al氧化物颗粒中,Al原子或Al簇被发射并吸附到衬底上。 通过调整电子束强度,使上述方法中的超细Al粒子的直径为10〜30nm,得到具有十面体的Al倍增孪晶粒子。
    • 9. 发明授权
    • Fine projection structure and fabricating method thereof
    • 精细投影结构及其制造方法
    • US6025604A
    • 2000-02-15
    • US94031
    • 1998-06-09
    • Yutaka WakayamaShun-ichiro Tanaka
    • Yutaka WakayamaShun-ichiro Tanaka
    • H01L29/06H01L21/20H01L31/0328H01L31/0336H01L31/072
    • H01L21/02378H01L21/02381H01L21/02425H01L21/02433H01L21/02532H01L21/02645H01L21/02653
    • Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
    • 在半导体衬底上处理细金属颗粒。 通过在真空中进行热处理,将半导体衬底的构成元素溶解在金属微粒中形成固溶体,从而进一步形成由半导体金属构成的均匀的液相(液滴)。 通过退火,半导体衬底的构成元素从半导体 - 金属液滴中析出。 因此,可以获得包括半导体衬底,在半导体衬底上的任意位置选择性地外延生长的半导体精细投影和选择性地设置在半导体精细投影上的金属层的精细投影复合结构。 金属层可根据需要进行移除。 这种精细投影复合结构在例如超高集成度半导体器件或量子尺寸器件中具有适用性。