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    • 7. 发明授权
    • Thin film transistor substrate and liquid crystal display
    • 薄膜晶体管基板和液晶显示器
    • US07838882B2
    • 2010-11-23
    • US12201110
    • 2008-08-29
    • Tetsuya FujikawaSeiji Doi
    • Tetsuya FujikawaSeiji Doi
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L29/66765G02F1/136213G02F1/136227H01L27/12H01L29/78621H01L29/78669
    • A TFT substrate comprises a substrate, a gate electrode and a lower electrode of a capacitor formed thereon, a first insulating layer formed thereon, a channel layer above the gate electrode and a lower layer of an upper electrode of the capacitor, a channel protection layer formed on an intermediate part of said channel layer and a capacitor protection layer formed on a connection region of the lower layer, source/drain electrodes formed on said channel layer and an upper layer of the upper electrode of the capacitor formed on the lower layer and covering the capacitor protection layer, a second insulating layer covering them, a first connection hole exposing the source electrode and a second connection hole exposing a connection region of said upper layer, which are penetrating the second insulating layer, and a pixel electrode formed thereon.
    • TFT基板包括基板,栅电极和形成在其上的电容器的下电极,形成在其上的第一绝缘层,栅电极上方的沟道层和电容器的上电极的下层,沟道保护层 形成在所述沟道层的中间部分上的电容器保护层和形成在下层的连接区域上的电容器保护层,形成在所述沟道层上的源/漏电极和形成在下层上的电容器的上电极的上层, 覆盖电容器保护层,覆盖它们的第二绝缘层,暴露源电极的第一连接孔和暴露穿过第二绝缘层的所述上层的连接区域的第二连接孔以及形成在其上的像素电极。