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3. 发明授权

US07335584B2 Method of using SACVD deposition and corresponding deposition reactor 有权
标题翻译：使用SACVD沉积和相应沉积反应器的方法
公开(公告)号：US07335584B2
公开(公告)日：2008-02-26
申请号：US10693639
申请日：2003-10-24
申请人： Michele Vulpio
发明人： Michele Vulpio
IPC分类号： H01L21/4763 , H01L21/31 , C23C16/00
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/452 , H01L21/02274 , H01L21/31612
摘要： A method is provided for using SACVD deposition to deposit at least one layer of dielectric material inside a deposition reactor during the fabrication of at least one semiconductor integrated circuit. According to the method, a reaction chamber is provided for carrying out SACVD deposition, and a stream of a first reaction gas containing oxygen plasma is supplied into a gas feed conduit connected to the reaction chamber. Microwaves are applied inside the gas feed conduit in order to produce sufficient oxygen radicals from the oxygen plasma, the oxygen radicals being necessary to initiate SACVD deposition. A stream of a second reaction gas is supplied into the reaction chamber, with the second reaction gas being suitable to initiate SACVD deposition when reacting with oxygen radicals. The first reaction gas in which sufficient oxygen radicals have been produced from oxygen plasma is supplied into the reaction chamber to perform an SACVD deposition within the reaction chamber through reaction of oxygen radicals with the second reaction gas. Also provided is a deposition reactor for performing an SACVD deposition technique for fabricating a semiconductor integrated circuit.
摘要翻译：提供一种用于在制造至少一个半导体集成电路期间使用SACVD沉积来在沉积反应器内沉积至少一层介电材料的方法。根据该方法，设置用于进行SACVD沉积的反应室，并且将含有氧等离子体的第一反应气体流供给到与反应室连接的气体供给导管中。在气体供给导管内施加微波以从氧等离子体产生足够的氧自由基，氧自由基是引发SACVD沉积所必需的。将第二反应气体流供应到反应室中，第二反应气体适于在与氧自由基反应时引发SACVD沉积。将从氧等离子体产生足够的氧自由基的第一反应气体供给到反应室中，以通过氧自由基与第二反应气体的反应在反应室内进行SACVD沉积。还提供了一种用于执行用于制造半导体集成电路的SACVD沉积技术的沉积反应器。

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