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    • 3. 发明申请
    • Benzo[d]isoxazol-3-ol DAAO inhibitors
    • 苯并[d]异恶唑-3-醇DAAO抑制剂
    • US20050143434A1
    • 2005-06-30
    • US11024151
    • 2004-12-28
    • Q. FangSeth HopkinsSteven Jones
    • Q. FangSeth HopkinsSteven Jones
    • A61K31/42C07D261/20
    • C07D261/20
    • Methods for increasing D-Serine concentration and reducing concentration of the toxic products of D-Serine oxidation, for enhancing learning, memory and/or cognition, or for treating schizophrenia, Alzheimer's disease, ataxia, or neuropathic pain, or preventing loss in neuronal function characteristic of neurodegenerative diseases involve administering to a subject in need of treatment a therapeutic amount of a compound of formula I, or a pharmaceutically acceptable salt or solvate thereof: wherein Z1 is N or CR3; Z2 is N or CR4; Z3is O or S; A is hydrogen, alkyl or M+; M is aluminum, calcium, lithium, magnesium, potassium, sodium, zinc or a mixture thereof; R1, R2, R3 and R4 are independently selected from hydrogen, alkyl, hydroxy alkoxy, aryl, acyl, halo, cyano, haloalkyl, NHCOOR5 and SO2NH2; R5 is aryl, arylalkyl, heteroaryl or heteroarylalkyl; at least one of R1, R2, R3 and R4 is other than hydrogen; and at least one of Z1 and Z2 is other than N.
    • 提高D-丝氨酸浓度和降低D-丝氨酸氧化毒性浓度的方法,用于增强学习,记忆和/或认知,或用于治疗精神分裂症,阿尔茨海默病,共济失调或神经性疼痛,或防止神经功能丧失的方法 神经变性疾病的特征包括向需要治疗的受试者施用治疗量的式I化合物或其药学上可接受的盐或溶剂合物:其中Z 1是N或CR 3 ; Z 2是N或CR 4; Z 3是O或S; A是氢,烷基或M + M是铝,钙,锂,镁,钾,钠,锌或它们的混合物; R 1,R 2,R 3和R 4独立地选自氢,烷基,羟基烷氧基, 芳基,酰基,卤素,氰基,卤代烷基,NHCOOR 5和SO 2 NH 2。 R 5是芳基,芳基烷基,杂芳基或杂芳基烷基; R 1,R 2,R 3和R 4中的至少一个不是氢; 并且Z 1和Z 2中的至少一个不是N。
    • 4. 发明申请
    • Pyrrole and pyrazole DAAO inhibitors
    • 吡咯和吡唑DAAO抑制剂
    • US20050143443A1
    • 2005-06-30
    • US11023924
    • 2004-12-28
    • Q. FangSeth HopkinsSteven Jones
    • Q. FangSeth HopkinsSteven Jones
    • A61K31/401A61K31/405A61K31/415A61K31/416C07D207/34C07D209/42C07D209/44C07D231/14C07D231/16C07D231/54C07D231/56C07D491/04
    • C07D231/56C07D207/34C07D209/42C07D209/44C07D231/14C07D231/16C07D231/54C07D491/04
    • Methods for increasing D-Serine concentration and reducing concentration of the toxic products of D-Serine oxidation, for enhancing learning, memory and/or cognition, or for treating schizophrenia, Alzheimer's disease, ataxia or neuropathic pain, or preventing loss in neuronal function characteristic of neurodegenerative diseases involve administering to a subject in need of treatment a therapeutically effective amount of a compound of formula I, or a pharmaceutically acceptable salt or solvate thereof: wherein R1 and R2 are independently selected from hydrogen, halo, nitro, alkyl, acyl, alkylaryl, and XYR5; or R1 and R2, taken together, form a 5, 6, 7 or 8-membered substituted or unsubstituted carbocyclic or heterocyclic group; X and Y are independently selected from O, S, NH, and (CR6R7)n; R3 is hydrogen, alkyl or M+; M is aluminum, calcium, lithium, magnesium, potassium, sodium, zinc ion or a mixture thereof; Z is N or CR4; R4 is from selected from hydrogen, halo, nitro, alkyl, alkylaryl, and XYR5; R5 is selected from aryl, substituted aryl, heteroaryl and substituted heteroaryl; R6 and R7 are independently selected from hydrogen and alkyl; n is an integer from 1 to 6; at least one of R1, R2 and R4 is other than hydrogen; and at least one of X and Y is (CR6R7)n. D-serine or cycloserine may be coadministered along with the compound of formula I.
    • 提高D-丝氨酸浓度,降低D-丝氨酸氧化毒性浓度的方法,用于增强学习,记忆和/或认知,或用于治疗精神分裂症,阿尔茨海默病,共济失调或神经性疼痛,或防止神经功能特征丧失 的神经变性疾病涉及向需要治疗的受试者施用治疗有效量的式I化合物或其药学上可接受的盐或溶剂合物:其中R 1和R 2, SUP>独立地选自氢,卤素,硝基,烷基,酰基,烷基芳基和XYR 5。 或R 1和R 2一起形成5,6或7元或8元的取代或未取代的碳环或杂环基; X和Y独立地选自O,S,NH和(CR 6)R 7)。 R 3是氢,烷基或M + H; M是铝,钙,锂,镁,钾,钠,锌离子或它们的混合物; Z是N或CR 4; R 4选自氢,卤素,硝基,烷基,烷基芳基和XYR 5; R 5选自芳基,取代的芳基,杂芳基和取代的杂芳基; R 6和R 7独立地选自氢和烷基; n是1至6的整数; R 1,R 2和R 4中的至少一个不是氢; 并且X和Y中的至少一个是(CR 6)R 7)。 D-丝氨酸或环丝氨酸可以与式I化合物共同给药。
    • 7. 发明授权
    • Forming CMOS with close proximity stressors
    • 形成具有接近应力的CMOS
    • US09041119B2
    • 2015-05-26
    • US13465159
    • 2012-05-07
    • Desmond J. Donegan, Jr.Abhishek DubeSteven JonesJophy S. KoshyViorel Ontalus
    • Desmond J. Donegan, Jr.Abhishek DubeSteven JonesJophy S. KoshyViorel Ontalus
    • H01L29/02H01L29/78H01L29/66
    • H01L29/7848H01L21/823807H01L21/823814H01L29/66628H01L29/66636
    • A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.
    • 提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。 该方法包括在衬底的第一区域中形成第一晶体管,在衬底的第一区域的顶部上具有栅极叠层,以及邻近栅堆叠的侧壁的一组间隔物,第一区域包括源极和漏极 第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管,在所述衬底的所述第二区域的顶部上具有栅极叠层,以及邻近所述栅极叠层的侧壁的一组间隔区,所述第二区域包括所述栅极叠层的源极和漏极区域 第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。
    • 10. 发明申请
    • Blind rivet, removal system and related method
    • 盲铆钉,拆卸系统及相关方法
    • US20070154277A1
    • 2007-07-05
    • US11444274
    • 2006-05-31
    • Daniel SmithSteven JonesDavid Evans
    • Daniel SmithSteven JonesDavid Evans
    • F16B13/06
    • F16B19/1054B21J15/50
    • The present invention relates to a blind rivet and blind rivet removal system and related method. Once set the blind rivet is not normally removed. However, increasingly removal is required due to the need to recycle automobiles. In order to remove blind rivets it has been necessary to remove the rivet flange by a variety of methods. Generally these methods were ineffective due to the resistance afforded by the mandrel and the risk of damage to the application or workpiece. Removing this unwanted swarf and debris often proved difficult. The invention provides a rivet with a stepped flange and a rivet removal tool with clips adapted to fit between the flange and surface of a workpiece so that upon relative displacement of the clips a rivet is extracted in a substantially axial direction as a single item. The invention also includes a tool and related method of blind rivet removal.
    • 本发明涉及一种盲铆钉和盲铆钉去除系统及其相关方法。 一旦设置,盲铆钉通常不会被去除。 然而,由于需要回收汽车,需要越来越多的清除。 为了去除盲铆钉,必须通过各种方法去除铆钉法兰。 通常这些方法由于心轴提供的阻力以及损坏应用或工件的风险而无效。 去除这种不需要的切屑和碎屑通常被证明是困难的。 本发明提供了一种具有阶梯式凸缘的铆钉和具有适于装配在工件的凸缘和表面之间的夹子的铆钉移除工具,使得当夹具的相对移位时,将铆钉作为单个项目沿基本轴向方向抽出。 本发明还包括一种盲铆钉去除工具和相关方法。