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1. 发明授权

US6100595A Semiconductor device having optoelectronic remote signal-exchange means 失效
标题翻译：具有光电远程信号交换装置的半导体装置
公开(公告)号：US6100595A
公开(公告)日：2000-08-08
申请号：US105735
申请日：1998-06-26
申请人： Herve Jaouen , Michel Marty
发明人： Herve Jaouen , Michel Marty
IPC分类号： H01L33/00 , G02B6/42 , H01L27/14 , H01L31/0232 , H01L23/14 , G02B6/30
CPC分类号： G02B6/4212 , G02B6/4248 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204
摘要： A semiconductor device includes a chip forming an integrated circuit; a connection substrate; an internal coupling mechanism; and at least one optical communication system. The connection substrate comprises an external coupling mechanism for electrically coupling to a device other than the chip. The internal coupling mechanism electrically couples the integrated circuit to the external coupling mechanism. The at least one optical communication system comprises two optoelectronic parts. The first optoelectronic part is either an emitter or a receiver which is integrated into the chip and constitutes one component of the integrated circuit. The second optoelectronic part is borne by the connection substrate and is able to be externally connected to the connection substrate. The second optoelectronic part faces the first optoelectronic part and is capable of exchanging light signals with the first optoelectronic part.
摘要翻译：半导体器件包括形成集成电路的芯片; 连接基板; 内联机构; 和至少一个光通信系统。连接基板包括用于电耦合到除了芯片之外的装置的外部耦合机构。内部耦合机构将集成电路电耦合到外部耦合机构。所述至少一个光通信系统包括两个光电子部件。第一个光电子部分是集成到芯片中的发射极或接收器，并构成集成电路的一个部件。第二光电子部分由连接基板承载，并且能够从外部连接到连接基板。第二光电子部分面向第一光电子部分，并且能够与第一光电子部分交换光信号。

2. 发明授权

US06423996B1 Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit 有权
标题翻译：在集成电路内制造金属 - 金属电容器的工艺及相应的集成电路
公开(公告)号：US06423996B1
公开(公告)日：2002-07-23
申请号：US09658221
申请日：2000-09-08
申请人： Michel Marty , Herve Jaouen
发明人： Michel Marty , Herve Jaouen
IPC分类号： H01L27108
CPC分类号： H01L28/40
摘要： A process for fabricating a metal-metal capacitor within an integrated circuit comprises the steps of: producing a first metal electrode, a second metal electrode, and a dielectric layer on top of a lower insulating layer; and depositing an upper insulating layer on top of the two metal electrodes and the dielectric layer. The integrated circuit comprises the insulating layer, a first metal layer which is on top of the lower insulating layer, and the upper insulating layer which is on top of the first metal layer. The capacitor comprises the first metal electrode, the second metal electrode, and the dielectric layer wherein each of the two metal electrodes is in contact with one side of the dielectric layer. The electrodes and the dielectric layer lie between the lower insulating layer, which supports a level of metallization (M1), and the upper insulating layer which covers this level of metallization.
摘要翻译：一种用于在集成电路内制造金属 - 金属电容器的工艺包括以下步骤：在下绝缘层的顶部上产生第一金属电极，第二金属电极和电介质层; 以及在所述两个金属电极和所述电介质层的顶部上沉积上绝缘层。集成电路包括绝缘层，位于下绝缘层顶部的第一金属层和位于第一金属层顶部的上绝缘层。电容器包括第一金属电极，第二金属电极和电介质层，其中两个金属电极中的每一个与电介质层的一侧接触。电极和电介质层位于支撑金属化水平（M1）的下绝缘层和覆盖这种金属化水平的上绝缘层之间。

3. 发明授权

US6081030A Semiconductor device having separated exchange means 失效
标题翻译：具有分离的交换装置的半导体装置
公开(公告)号：US6081030A
公开(公告)日：2000-06-27
申请号：US105355
申请日：1998-06-26
申请人： Herve Jaouen , Michel Marty
发明人： Herve Jaouen , Michel Marty
IPC分类号： H01L23/12 , H01F17/00 , H01L23/64 , H01L25/00 , H01L23/34
CPC分类号： H01L23/48 , H01L23/645 , H01L24/73 , H01F17/0006 , H01L2224/16225 , H01L2924/01004 , H01L2924/01033 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15174 , H01L2924/15311 , H01L2924/16195 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107
摘要： A semiconductor device having separated exchange mechanism comprises a chip forming an integrated circuit; a connection substrate; device connection points or balls; and at least one exchange mechanism. The connection substrate comprises an external connection mechanism. The device connection points or balls are distributed in the form of a matrix and are located between the juxtaposed faces of the chip and of the connection substrate. The device connection points are connected to the external connection mechanism. The exchange mechanism comprises two parts. The two parts are arranged so as to be separated from each other and capable of exchanging signals between each other, in one or both directions. The first part is physically coupled to the chip. The second part is physically coupled to the connection substrate and is connected to the external connection mechanism.
摘要翻译：具有分离的交换机构的半导体器件包括形成集成电路的芯片; 连接基板; 设备连接点或球; 和至少一个交换机制。连接基板包括外部连接机构。设备连接点或球以矩阵的形式分布并且位于芯片的并置面和连接衬底之间。设备连接点连接到外部连接机构。交换机制包括两部分。这两个部分被布置成彼此分离并且能够在一个或两个方向上彼此之间交换信号。第一部分物理耦合到芯片。第二部分物理耦合到连接基板并连接到外部连接机构。

4. 发明授权

US6031445A Transformer for integrated circuits 有权
标题翻译：集成电路用变压器
公开(公告)号：US6031445A
公开(公告)日：2000-02-29
申请号：US199837
申请日：1998-11-25
申请人： Michel Marty , Herve Jaouen
发明人： Michel Marty , Herve Jaouen
IPC分类号： H01F27/28 , H01F41/04 , H01L21/02 , H01F5/00
CPC分类号： H01L28/10 , H01F27/2804 , H01F41/041 , H01F2017/0086 , Y10T29/4902
摘要： A invention provides a transformer for use in integrated circuits, comprising four layers of conductive lines, separated from each other by first, second and third insulating layers. First conductive vias traverse the second insulating layer to connect said second and third pluralities of conducting lines, to form a first winding. Second conductive vias traverse the first, second and third insulating layers to connect said first and fourth pluralities of conducting lines to form a second winding, about and approximately concentric with said first winding.
摘要翻译：本发明提供了一种用于集成电路的变压器，包括四层导电线，它们由第一，第二和第三绝缘层相互隔开。第一导电通孔穿过第二绝缘层以连接所述第二和第三多条导线，以形成第一绕组。第二导电通孔横穿第一，第二和第三绝缘层，以连接所述第一和第四多条导线以形成与所述第一绕组大致同心的第二绕组。

5. 发明授权

US08981516B2 Back-side illuminated image sensor provided with a transparent electrode 有权
标题翻译：具有透明电极的背面照明图像传感器
公开(公告)号：US08981516B2
公开(公告)日：2015-03-17
申请号：US13445222
申请日：2012-04-12
申请人： Jens Prima , François Roy , Michel Marty
发明人： Jens Prima , François Roy , Michel Marty
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/1464 , H01L27/14643
摘要： A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.
摘要翻译：一种由薄化的半导体衬底形成的背面照明图像传感器，其中：通过绝缘层与衬底绝缘的透明导电电极在衬底的整个后表面上延伸; 并且通过绝缘涂层与基板绝缘的导电区域从基板的前表面垂直延伸到电极。

6. 发明授权

US08704282B2 Method for forming a back-side illuminated image sensor 有权
标题翻译：用于形成背面照明图像传感器的方法
公开(公告)号：US08704282B2
公开(公告)日：2014-04-22
申请号：US13445013
申请日：2012-04-12
申请人： Michel Marty , François Roy , Jens Prima
发明人： Michel Marty , François Roy , Jens Prima
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14687
摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.
摘要翻译：一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从其后表面减薄衬底; b）在薄化衬底的后表面上沉积与衬底相同导电类型但具有较高掺杂水平的非晶硅层; 和c）在能够使非晶硅重结晶以使其稳定的温度下进行退火。

7. 发明申请

US20080064174A1 METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT WITH FULLY DEPLETED AND PARTIALLY DEPLETED TRANSISTORS 有权
标题翻译：用完整的部分放置的晶体管制造集成电路的方法
公开(公告)号：US20080064174A1
公开(公告)日：2008-03-13
申请号：US11846622
申请日：2007-08-29
申请人： Philippe Coronel , Michel Marty
发明人： Philippe Coronel , Michel Marty
IPC分类号： H01L21/336
CPC分类号： H01L21/84
摘要： A method for manufacturing an integrated circuit containing fully and partially depleted MOS transistors, including the steps of forming similar MOS transistors on a thin silicon layer formed on a silicon-germanium layer resting on a silicon substrate; attaching the upper surface of the structure to a support wafer; eliminating the substrate; depositing a mask and opening this mask at the locations of the fully-depleted transistors; oxidizing the silicon-germanium at the locations of the fully-depleted transistors in conditions such that a condensation phenomenon occurs; and eliminating the oxidized portion and the silicon-germanium portion, whereby there remain transistors with a thinned silicon layer.
摘要翻译：一种用于制造包含完全和部分耗尽的MOS晶体管的集成电路的方法，包括以下步骤：在沉积在硅衬底上的硅锗层上形成的薄硅层上形成类似的MOS晶体管; 将所述结构的上表面附接到支撑晶片; 消除基板; 在完全耗尽的晶体管的位置处沉积掩模并打开该掩模; 在发生冷凝现象的条件下，在完全耗尽的晶体管的位置氧化硅 - 锗; 并且消除氧化部分和硅 - 锗部分，由此保留具有薄化硅层的晶体管。

8. 发明申请

US20070278469A1 Component containing a baw filter 有权
标题翻译：含有过滤器的组分
公开(公告)号：US20070278469A1
公开(公告)日：2007-12-06
申请号：US11807491
申请日：2007-05-29
申请人： Michel Marty , Jean-Christophe Giraudin , Philippe Coronel
发明人： Michel Marty , Jean-Christophe Giraudin , Philippe Coronel
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H03H9/0547
摘要： A monolithic assembly of electronic components including a semiconductor substrate, at a first level above the substrate, at least one bulk acoustic wave resonator, at a second level above the resonator, a single-crystal semiconductor layer in which are formed semiconductor components, and recesses under the semiconductor layer portions arranged above the resonators.
摘要翻译：包括半导体衬底的电子部件的单体组件包括在衬底上方的第一级，在谐振器上方的第二级上的至少一个体声波谐振器，形成半导体部件的单晶半导体层，以及凹部在布置在谐振器上方的半导体层部分下方。

9. 发明申请

US20070041680A1 Process for assembling passive and active components and corresponding integrated circuit 审中-公开
标题翻译：用于组装无源和有源组件的过程以及相应的集成电路
公开(公告)号：US20070041680A1
公开(公告)日：2007-02-22
申请号：US11504216
申请日：2006-08-15
申请人： Jean-Christophe Giraudin , Michel Marty
发明人： Jean-Christophe Giraudin , Michel Marty
IPC分类号： G02B6/12 , H01L23/52
CPC分类号： H01L21/6835 , H01L21/2007 , H01L21/8221 , H01L23/5389 , H01L25/16 , H01L27/0688 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： An integrated circuit includes at least two subassemblies: a first subassembly of active components and a second subassembly of passive components. The second subassembly of passive components is bonded beneath the first subassembly of active components. Interconnects are formed which pass through the first subassembly of active components, and the interconnects extend from the first subassembly of active components to the second subassembly of passive components.
摘要翻译：集成电路包括至少两个子组件：有源部件的第一子组件和无源组件的第二子组件。无源部件的第二子组件被结合在有源部件的第一子组件的下方。形成穿过有源部件的第一子组件的互连件，并且互连从有源部件的第一子组件延伸到无源部件的第二子组件。

10. 发明授权

US07115465B2 Method for manufacturing a bipolar transistor 有权
标题翻译：制造双极晶体管的方法
公开(公告)号：US07115465B2
公开(公告)日：2006-10-03
申请号：US10838860
申请日：2004-05-03
申请人： Michel Marty , Bertrand Martinet , Cyril Fellous
发明人： Michel Marty , Bertrand Martinet , Cyril Fellous
IPC分类号： H01L21/8249
CPC分类号： H01L29/66287 , H01L29/66242
摘要： A method for manufacturing a bipolar transistor, comprising the steps of: growing on the substrate a first semiconductor; depositing an encapsulation layer etchable with respect to the first semiconductor, forming a sacrificial block at the location of the base-emitter junction; exposing the first semiconductor around spacers formed around said block; forming a second semiconductor, then a third semiconductor etchable with respect to the second semiconductor layer, the encapsulation layer, and the spacers, the sum of the thicknesses of the second semiconductor and the sacrificial layer being substantially equal to the sum of the thicknesses of the encapsulation layer and of the sacrificial block; removing the block and the encapsulation layer; depositing a fourth semiconductor; removing the third semiconductor; and etching an insulating layer to maintain it on the emitter walls and between said emitter and the second semiconductor.
摘要翻译：一种制造双极晶体管的方法，包括以下步骤：在衬底上生长第一半导体; 沉积相对于第一半导体可蚀刻的封装层，在基极 - 发射极结的位置处形成牺牲块; 将第一半导体暴露在围绕所述块形成的间隔件周围; 形成第二半导体，然后可蚀刻相对于第二半导体层，封装层和间隔物的第三半导体，第二半导体和牺牲层的厚度之和基本上等于封装层和牺牲块; 去除块和封装层; 沉积第四半导体; 去除第三半导体; 并蚀刻绝缘层以将其保持在发射极壁上和所述发射极与第二半导体之间。

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