专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06645884B1 Method of forming a silicon nitride layer on a substrate 失效
标题翻译：在基板上形成氮化硅层的方法
公开(公告)号：US06645884B1
公开(公告)日：2003-11-11
申请号：US09350810
申请日：1999-07-09
申请人： Michael X. Yang , Chien-Teh Kao , Karl Littau , Steven A. Chen , Henry Ho , Ying Yu
发明人： Michael X. Yang , Chien-Teh Kao , Karl Littau , Steven A. Chen , Henry Ho , Ying Yu
IPC分类号： H01L2102
CPC分类号： C23C16/4412 , C23C16/345
摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.
摘要翻译：本发明提供了在半导体晶片上形成氮化硅层的方法和装置。半导体晶片位于半导体处理室内的基座上。将载气，氮源气体和硅源气体引入到半导体处理室中，并且将半导体晶片在室内的压力下暴露于大约100至500托的范围内的气体混合物。

2. 发明授权

US06530992B1 Method of forming a film in a chamber and positioning a substitute in a chamber 失效
标题翻译：在室中形成膜并将替代物定位在室中的方法
公开(公告)号：US06530992B1
公开(公告)日：2003-03-11
申请号：US09350632
申请日：1999-07-09
申请人： Michael X. Yang , Henry Ho , Steven A. Chen
发明人： Michael X. Yang , Henry Ho , Steven A. Chen
IPC分类号： C23C1600
CPC分类号： H01L21/67017
摘要： Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.
摘要翻译：在基板上形成膜的方法和装置，包括将预处理材料引入到足以形成膜作为处理室的内表面的一部分的处理室中，以阻止从该室的部分排气，将基板引入到并在衬底上形成膜。

3. 发明授权

US06802906B2 Emissivity-change-free pumping plate kit in a single wafer chamber 有权
标题翻译：发射率更换泵板套件在单个晶圆室中
公开(公告)号：US06802906B2
公开(公告)日：2004-10-12
申请号：US10051651
申请日：2002-01-15
申请人： Xiaoliang Jin , Shulin Wang , Lee Luo , Henry Ho , Steven A. Chen
发明人： Xiaoliang Jin , Shulin Wang , Lee Luo , Henry Ho , Steven A. Chen
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/45591 , C23C16/46 , H01L21/67109
摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.
摘要翻译：一种装置，其包括具有裙部的泵板，其中所述裙部包含多个孔和晶片通道狭槽，并且其中孔的数量被定尺寸和定位以提供感受器的均匀加热。

4. 发明授权

US06586343B1 Method and apparatus for directing constituents through a processing chamber 失效
标题翻译：用于引导成分通过处理室的方法和装置
公开(公告)号：US06586343B1
公开(公告)日：2003-07-01
申请号：US09350817
申请日：1999-07-09
申请人： Henry Ho , Ying Yu , Steven A. Chen
发明人： Henry Ho , Ying Yu , Steven A. Chen
IPC分类号： H01L2131
CPC分类号： H01L21/67017 , Y10S118/90
摘要： A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.
摘要翻译：用于引导处理气体通过诸如气相沉积室的处理装置的方法和装置。该装置包括用于处理室的泵板，其具有环形主体构件，其中所述本体构件具有第一部分，第二限定周向边缘和中心开口。第一部分包括圆周边缘的侧壁，其具有多个周向间隔开的通孔，并且第二部分包括从周向边缘突出的侧部，使得在处理室中，第一部分限定第一气流区域包括中央开口和包括第二部分的侧部的第二气流区域。

5. 发明授权

US06582522B2 Emissivity-change-free pumping plate kit in a single wafer chamber 失效
公开(公告)号：US06582522B2
公开(公告)日：2003-06-24
申请号：US09798424
申请日：2001-03-02
申请人： Lee Luo , Henry Ho , Shulin Wang , Binh Hoa Tran , Alexander Tam , Errol A. C. Sanchez , Xianzhi Tao , Steven A. Chen
发明人： Lee Luo , Henry Ho , Shulin Wang , Binh Hoa Tran , Alexander Tam , Errol A. C. Sanchez , Xianzhi Tao , Steven A. Chen
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/45591 , C23C16/46
摘要： Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

6. 发明授权

US6110284A Apparatus and a method for shielding light emanating from a light source heating a semicondutor processing chamber 失效
标题翻译：用于屏蔽从加热半导体处理室的光源发出的光的装置和方法
公开(公告)号：US6110284A
公开(公告)日：2000-08-29
申请号：US4820
申请日：1998-01-09
申请人： Chen-An Chen , Henry Ho , Steven A. Chen
发明人： Chen-An Chen , Henry Ho , Steven A. Chen
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67248 , C23C16/481 , C30B25/105 , C30B31/12 , H01L21/67115 , Y10S438/942
摘要： A semiconductor processing system comprising a semiconductor processing chamber, a light, a temperature detector, and a member. The light is positioned to heat the confines of the chamber. The temperature detector measures the temperature at the location within the chamber. The member has a translucent quartz shell and opaque core and shields the location from light emanating from the light source.
摘要翻译：一种半导体处理系统，包括半导体处理室，光，温度检测器和构件。光被定位成加热室的范围。温度检测器测量室内位置的温度。该构件具有半透明的石英壳和不透明的核心，并且遮挡了从光源发出的光的位置。

7. 发明授权

US6156079A Window support member for a semiconductor processing system 失效
标题翻译：用于半导体处理系统的窗口支撑构件
公开(公告)号：US6156079A
公开(公告)日：2000-12-05
申请号：US176648
申请日：1998-10-21
申请人： Henry Ho , Yu Chang , Kuo-Chun Wu , Steven A. Chen
发明人： Henry Ho , Yu Chang , Kuo-Chun Wu , Steven A. Chen
IPC分类号： H01L21/00 , H05B3/00 , C23C16/00 , F26B19/00 , F27D11/00 , H01L21/64
CPC分类号： H01L21/67115 , H05B3/0047 , Y10T29/41
摘要： A semiconductor processing system includes a semiconductor processing chamber constructed of a main body, a window support member, and a window. The window support member is located over an opening into the main body. The window is located over the window support component. At least one radiation passage is formed in the window support component. The radiation passage has a first end which is open to the internal dimensions of the main body and a second end, opposing the first end, which terminates against the window.
摘要翻译：半导体处理系统包括由主体，窗户支撑构件和窗构成的半导体处理室。窗口支撑构件位于主体的开口的上方。窗口位于窗口支撑组件的上方。至少一个辐射通道形成在窗户支撑部件中。辐射通道具有对主体的内部尺寸敞开的第一端和与第一端相对的第二端，该第二端终止于窗口。

8. 发明授权

US06559039B2 Doped silicon deposition process in resistively heated single wafer chamber 有权
标题翻译：在电阻加热的单晶片室中掺杂硅沉积工艺
公开(公告)号：US06559039B2
公开(公告)日：2003-05-06
申请号：US09858821
申请日：2001-05-15
申请人： Shulin Wang , Lee Luo , Steven A. Chen , Errol Sanchez , Xianzhi Tao , Zoran Dragojlovic , Li Fu
发明人： Shulin Wang , Lee Luo , Steven A. Chen , Errol Sanchez , Xianzhi Tao , Zoran Dragojlovic , Li Fu
IPC分类号： H01L2124
CPC分类号： H01L21/67103 , C23C16/24 , C23C16/45557 , C23C16/4586 , C23C16/46 , H01L21/28556 , H01L21/76877
摘要： A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.
摘要翻译：一种沉积掺杂多晶或非晶硅膜的方法。该方法包括将基底放置在基座上。感受体包括其中具有电阻加热器的主体和与电阻加热器物理接触的热电偶。感受体位于处理室中，使得处理室具有在基座上方的顶部部分和基座下方的底部部分。该方法还包括加热基座。该方法还包括通过位于基座上的喷淋头将工艺气体混合物提供到处理室中。处理气体混合物包括硅源气体，掺杂剂气体和载气。载气包括氮气。该方法还包括从硅源气体形成掺杂硅膜。

9. 发明授权

US06991999B2 Bi-layer silicon film and method of fabrication 失效
公开(公告)号：US06991999B2
公开(公告)日：2006-01-31
申请号：US09948461
申请日：2001-09-07
申请人： Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
发明人： Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
IPC分类号： H01L29/04
CPC分类号： H01L21/28035 , H01L29/4925 , Y10S438/969
摘要： A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

10. 发明授权

US06559074B1 Method of forming a silicon nitride layer on a substrate 有权
标题翻译：在基板上形成氮化硅层的方法
公开(公告)号：US06559074B1
公开(公告)日：2003-05-06
申请号：US10015713
申请日：2001-12-12
申请人： Steven A. Chen , Xianzhi Tao , Shulin Wang , Lee Luo , Kegang Huang , Sang H. Ahn
发明人： Steven A. Chen , Xianzhi Tao , Shulin Wang , Lee Luo , Kegang Huang , Sang H. Ahn
IPC分类号： H01L2131
CPC分类号： C23C16/345 , H01L21/3185 , Y10S438/958
摘要： A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
摘要翻译：在晶体管栅极上形成氮化硅层，而处理温度相对较高，通常至少为500℃，压力相对较高，通常为至少50托，以获得较高的氮化硅形成速率层。控制处理条件以更均匀地形成氮化硅层。通常，体积的NH 3气体与含硅气体的比例被选择得足够高，使得如果表面在小于0.15微米宽的晶体管栅极之间具有低区域，并且具有高度 - 宽度比至少为1.0，以及至少5微米至5微米的完全平坦的区域，该层在平坦区域上比在低区域的基底上以不超过25％的速率形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式