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    • 3. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    • EUV微观照相和相关系统和装置的照明光学
    • US20110063598A1
    • 2011-03-17
    • US12915785
    • 2010-10-29
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • G03B27/72
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场,其具有在较大场尺寸和较短场尺寸之间的延伸比,其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面,使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面,它们通过相关联的基本照明光瞳面提供物场的基本照明,而且还包括多个校正照明场面,其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 8. 发明申请
    • PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY
    • 投影曝光装置用于微结构
    • US20080259303A1
    • 2008-10-23
    • US12103185
    • 2008-04-15
    • Jens OssmannMartin EndresRalf Stuetzle
    • Jens OssmannMartin EndresRalf Stuetzle
    • G03B27/70G03B27/54
    • G03F7/70841G03F7/702G03F7/70808G03F7/70833
    • A projection exposure apparatus for microlithography is disclosed. The apparatus can include a radiation source to generate illumination radiation and a reticle holder to receive a reticle in an object plane. The apparatus can further include illumination optics to guide the illumination radiation to an object field, which is to be illuminated, in the object plane. The apparatus can also include a wafer holder to receive a wafer in an image plane and projection optics to image the object field into an image field in the image plane. The radiation source and projection optics can be arranged in separate chambers (e.g., one above the other). The chambers can be separated by a wall. There can be an illumination radiation leadthrough in the wall. In some embodiments, the projection exposure apparatus can guide the illumination radiation with low loss.
    • 公开了一种用于微光刻的投影曝光装置。 该装置可以包括用于产生照明辐射的辐射源和用于在物平面中接收光罩的光罩保持器。 该装置还可以包括照明光学器件,以将照射辐射引导到物体平面中要被照明的物体场。 该装置还可以包括用于在图像平面中接收晶片的晶片保持器和用于将对象场成像到图像平面中的图像场的投影光学器件。 辐射源和投影光学器件可以布置在分开的腔室中(例如,彼此之一)。 这些室可以被墙隔开。 墙壁上可以有一个照明辐射引线。 在一些实施例中,投影曝光装置可以低损耗地引导照射辐射。
    • 10. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    • EUV微观光谱的照明光学
    • US20110235015A1
    • 2011-09-29
    • US13076730
    • 2011-03-31
    • Guenther DengelGero WittichUdo DingerRalf StuetzleMartin EndresJens OssmannBerndt Warm
    • Guenther DengelGero WittichUdo DingerRalf StuetzleMartin EndresJens OssmannBerndt Warm
    • G03B27/72
    • G03F7/7085G03F7/70141G03F7/702G03F7/70558
    • An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
    • 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件,使用的辐射束至少部分地施加在物场的上游,并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间,在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件,用于确保符合预设的照明参数,即使在最严格的精度要求下。