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    • 1. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    • EUV微观照相和相关系统和装置的照明光学
    • US20110063598A1
    • 2011-03-17
    • US12915785
    • 2010-10-29
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • Damian FiolkaBerndt WarmChristian SteigerwaldMartin EndresRalf StuetzleJens OssmannRalf ScharnweberMarkus HaufUdo DingerSeverin WaldisMarc KirchJoachim Hartjes
    • G03B27/72
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场,其具有在较大场尺寸和较短场尺寸之间的延伸比,其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面,使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面,它们通过相关联的基本照明光瞳面提供物场的基本照明,而且还包括多个校正照明场面,其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 3. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    • EUV微观光谱的照明光学
    • US20110235015A1
    • 2011-09-29
    • US13076730
    • 2011-03-31
    • Guenther DengelGero WittichUdo DingerRalf StuetzleMartin EndresJens OssmannBerndt Warm
    • Guenther DengelGero WittichUdo DingerRalf StuetzleMartin EndresJens OssmannBerndt Warm
    • G03B27/72
    • G03F7/7085G03F7/70141G03F7/702G03F7/70558
    • An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
    • 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件,使用的辐射束至少部分地施加在物场的上游,并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间,在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件,用于确保符合预设的照明参数,即使在最严格的精度要求下。
    • 9. 发明申请
    • Apparatus and method for processing material with focused electromagnetic radiation
    • 用聚焦电磁辐射处理材料的装置和方法
    • US20120083771A1
    • 2012-04-05
    • US12894375
    • 2010-09-30
    • Berndt WarmPeter RiedelClaudia GorschbothFranziska Woittennek
    • Berndt WarmPeter RiedelClaudia GorschbothFranziska Woittennek
    • A61F9/01G02B27/40
    • A61F9/00836
    • An apparatus for processing material with focused electromagnetic radiation, comprises: a source emitting electromagnetic radiation, means for directing the radiation onto the material, means for focusing the radiation on or in the material, a unit for generating a pattern in the optical path of the electromagnetic radiation, an at least partially reflective surface in the optical path before the focus of the focused radiation, said pattern being imaged onto said at least partially reflective surface through at least part of said directing means and said focusing means, at least one detector onto which an image of the pattern is reflected by said surface and which generates electrical signals corresponding to said image, said image containing information on the position of the focus, a computer receiving said electrical signals and programmed to process said image so as to generate an electrical signal depending on the focal position, and a divergence adjustment element arranged in said optical path and adapted to receive said electrical signal of the computer so as to change a divergence of the electromagnetic radiation depending on said signal.
    • 一种用于处理具有聚焦电磁辐射的材料的设备,包括:发射电磁辐射的源,用于将辐射引导到材料上的装置,用于将辐射聚焦在材料上或其中的装置,用于在该光学系统的光路中产生图案的单元 电磁辐射,在聚焦辐射的聚焦之前的光路中的至少部分反射的表面,所述图案通过所述引导装置和所述聚焦装置的至少一部分成像到所述至少部分反射表面上,至少一个检测器 其中所述图案的图像被所述表面反射并且产生对应于所述图像的电信号,所述图像包含关于焦点位置的信息,接收所述电信号的计算机,并被编程以处理所述图像,以便产生电 信号取决于焦点位置,发散调节元件以sai布置 d光路,并且适于接收计算机的所述电信号,以便根据所述信号改变电磁辐射的发散。