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1. 发明授权

US4554184A Method for plating from an electroless plating bath 失效
标题翻译：从化学镀浴中镀覆的方法
公开(公告)号：US4554184A
公开(公告)日：1985-11-19
申请号：US626961
申请日：1984-07-02
申请人： Michael J. Canestaro , Ronald A. Kaschak , Donald G. McBride , Donald P. Seraphim
发明人： Michael J. Canestaro , Ronald A. Kaschak , Donald G. McBride , Donald P. Seraphim
IPC分类号： C23C18/16 , C23C18/31 , C23C18/34 , C23C18/40 , C23C18/44 , H05K3/18
CPC分类号： C23C18/1617 , C23C18/1676 , C23C18/168 , C23C18/405 , H05K3/187
摘要： A method for plating a metal from an electroless plating bath onto a substrate is provided which includes providing a source of an electroless plating bath at a non-plating temperature in a master mixing tank; transferring at least a portion of the plating bath to at least one plating cell, changing the bath temperature to a plating temperature, and contacting the substrate to be plated with the bath at a plating temperature.
摘要翻译：提供了一种从化学镀浴中将金属镀覆到基底上的方法，其包括在主混合槽中提供非电镀温度下的无电镀浴源; 将至少一部分电镀槽转移到至少一个电镀单元，将电镀温度改变为电镀温度，并在电镀温度下使待镀衬底与镀液接触。

2. 发明授权

US4707377A Copper plating 失效
标题翻译：镀铜
公开(公告)号：US4707377A
公开(公告)日：1987-11-17
申请号：US925511
申请日：1986-10-27
申请人： Robert J. Capwell , Ronald A. Kaschak , Donald G. McBride , Robert G. Rickert , Donald P. Seraphim
发明人： Robert J. Capwell , Ronald A. Kaschak , Donald G. McBride , Robert G. Rickert , Donald P. Seraphim
IPC分类号： C23C18/40 , H05K3/18
CPC分类号： C23C18/40 , H05K3/187
摘要： Copper is plated onto a substrate from an electroless plating bath having a mix potential relative to a saturated calomel electrode of about minus 630 to about minus 675 millivolts at a temperature of about 73.degree. C. The mix potential of the bath is monitored and adjusted during the plating to maintain it at about minus 630 to about minus 675 millivolts with respect to a calomel electrode at a temperature of about 73.degree. C. The number of of plating void defects is thereby reduced.
摘要翻译：在约73℃的温度下，将铜从具有相对于饱和甘汞电极的混合电位的化学镀浴镀在大约-630至大约-675毫伏之间的基底上。监测并调节浴的混合电位电镀使其在约73℃的温度下相对于甘汞电极保持在约减去630至约-675毫伏。由此减少了电镀空隙缺陷的数量。

3. 发明授权

US06693031B2 Formation of a metallic interlocking structure 失效
标题翻译：形成金属互锁结构
公开(公告)号：US06693031B2
公开(公告)日：2004-02-17
申请号：US10039710
申请日：2002-01-04
申请人： Gerald G. Advocate, Jr. , Francis J. Downes, Jr. , Luis J. Matienzo , Ronald A. Kaschak , John S. Kresge , Daniel C. Van Hart
发明人： Gerald G. Advocate, Jr. , Francis J. Downes, Jr. , Luis J. Matienzo , Ronald A. Kaschak , John S. Kresge , Daniel C. Van Hart
IPC分类号： H01L2144
CPC分类号： H01L23/5226 , H01L23/49827 , H01L2924/0002 , H05K3/0035 , H05K3/027 , H05K3/06 , H05K3/383 , H05K3/421 , H05K3/4644 , H05K2201/0248 , H05K2201/09509 , H05K2201/09563 , H05K2203/0307 , H05K2203/0353 , H01L2924/00
摘要： An electronic structure including a metallic interlocking structure for bonding a conductive plated layer to metal surface, and a method of forming the electronic structure. The method provides a substrate having a metallic sheet within a dielectric layer. The metallic sheet includes a metal such as copper. An opening in the substrate, such as a blind via, is formed by laser drilling through the dielectric layer and partially through the metallic sheet. If the opening is a blind via, then the laser drilling is within an outer ring of the blind via cross section using a laser beam having a target diameter between about 20% and about 150% of a radius of the blind via cross section. A surface at the bottom of the opening, called a “blind surface,” includes a metallic protrusion formed by the laser drilling, such that the metallic protrusion is integral with a portion of the blind surface. The metallic protrusion includes the metal of the metallic sheet and at least one constituent element from the dielectric layer. The metallic protrusion is then etched to form a metallic interlocking structure that is integral with the portion of the blind surface. The metallic interlocking structure includes discrete metallic fibers, with each metallic fiber having a curved (or curled) geometry. Each metallic fiber has its own unique composition that includes the metal, at least one constituent element of the dielectric layer, or both.
摘要翻译：一种电子结构，包括用于将导电镀层接合到金属表面的金属互锁结构，以及形成电子结构的方法。该方法提供了在电介质层内具有金属片的衬底。金属片包括铜等金属。通过激光钻孔穿过电介质层并且部分地穿过金属片，形成诸如盲孔之类的衬底中的开口。如果开口是盲孔，则激光钻孔是通过横截面的盲孔通过横截面的半径的约20％至约150％之间的目标直径的激光束在盲孔的外环内。在开口底部的称为“盲面”的表面包括通过激光钻孔形成的金属突起，使得金属突起与盲表面的一部分成一体。金属突起包括金属片的金属和来自电介质层的至少一个构成元件。然后蚀刻金属突起以形成与盲表面的一部分成一体的金属互锁结构。金属互锁结构包括分立的金属纤维，每个金属纤维具有弯曲（或卷曲）的几何形状。每种金属纤维具有其独特的组成，其包括金属，介电层的至少一个构成元件，或两者。

4. 发明授权

US4552787A Deposition of a metal from an electroless plating composition 失效
标题翻译：从化学镀组合物中沉积金属
公开(公告)号：US4552787A
公开(公告)日：1985-11-12
申请号：US584960
申请日：1984-02-29
申请人： Paul Chebiniak , Ronald A. Kaschak , Lois J. Root
发明人： Paul Chebiniak , Ronald A. Kaschak , Lois J. Root
IPC分类号： C23C18/16 , C23C18/18 , C23C18/52 , H05K3/18 , H05K3/22
CPC分类号： H05K3/181 , C23C18/1651 , C23C18/1689 , C23C18/1834
摘要： A metal is deposited onto a substrate from an electroless plating solution by plating an initial layer of metal onto the substrate, then contacting the metal-plated substrate with a solution of an acid; and plating an additional layer of metal onto the plated, acid-treated substrate. The process reduces the plating void defects.
摘要翻译：通过将初始金属层电镀到基板上，然后使金属镀覆的基板与酸的溶液接触，将金属从化学镀溶液沉积到基板上; 并将另外的金属层镀在镀有电镀的基底上。该方法减少了电镀缺陷缺陷。

5. 发明授权

US4967690A Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means 失效
标题翻译：化学镀具有双层控制溶解氧，具有化学维护方式的具体位置
公开(公告)号：US4967690A
公开(公告)日：1990-11-06
申请号：US508510
申请日：1990-04-12
申请人： Edmond O. Fey , Peter Haselbauer , Dae Y. Jung , Ronald A. Kaschak , Hans-Dieter Kilthau , Roy H. Magnuson , Robert J. Wagner
发明人： Edmond O. Fey , Peter Haselbauer , Dae Y. Jung , Ronald A. Kaschak , Hans-Dieter Kilthau , Roy H. Magnuson , Robert J. Wagner
IPC分类号： C23C18/16 , C23C18/40 , H05K3/18
CPC分类号： C23C18/40 , C23C18/1619 , C23C18/1682 , C23C18/1683 , H05K3/187
摘要： Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introducted into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.
摘要翻译：通过独立地控制浴中的镀液和相关的外部管道中的溶解氧含量，使连续化学镀铜系统中的结节形成最小化。电镀槽中的溶解氧水平保持在这样的值，使得发生令人满意的电镀。在电镀液离开槽的地方，另外的氧气被引入到溶液中，使得外部管道中的电镀溶液中的溶解氧水平足够高，以防止在外部管道中发生任何电镀在外部管道中，铜被蚀刻或溶解回溶液中。在外部管道的末端，溶解氧水平降低，使得罐中的电镀液的溶解氧水平保持在电镀的水平。

6. 发明授权

US4756923A Method of controlling resistivity of plated metal and product formed thereby 失效
标题翻译：控制电镀金属电阻率及由此形成的产品的方法
公开(公告)号：US4756923A
公开(公告)日：1988-07-12
申请号：US889661
申请日：1986-07-28
申请人： Melanie A. Day , Ronald A. Kaschak , Steven A. Schubert
发明人： Melanie A. Day , Ronald A. Kaschak , Steven A. Schubert
IPC分类号： C23C18/31 , C23C18/16 , C23C18/40 , H05K3/18 , C23C16/52
CPC分类号： C23C18/1675 , H05K3/187 , Y10S428/931 , Y10S428/936 , Y10T428/12458
摘要： Method and product resulting therefrom of controlling the residual resistivity of an electrolessly deposited metal by first, calculating the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.
摘要翻译：由此产生的方法和产品首先控制无电沉积金属的残留电阻率，计算沉积金属的残余电阻率与其沉积速率之间的数学关系，其次，沉积所述金属以产生预定的残留电阻率。

7. 发明授权

US4623554A Method for controlling plating rate in an electroless plating system 失效
标题翻译：无电镀系统中电镀速率控制方法
公开(公告)号：US4623554A
公开(公告)日：1986-11-18
申请号：US709955
申请日：1985-03-08
申请人： Ronald A. Kaschak , Roy H. Magnuson , Edward J. Yarmchuk
发明人： Ronald A. Kaschak , Roy H. Magnuson , Edward J. Yarmchuk
IPC分类号： H05K3/18 , C23C18/16 , C23C18/31 , C23C18/40
CPC分类号： C23C18/1683 , C23C18/1617 , C23C18/405
摘要： Method for controlling plating in an electroless plating process. The plating rate is continuously monitored. The plating rate is compared with a set point plating rate. A control voltage is derived proportional to the difference in plating rate and the desired plating rate, the integral of the difference, and the derivative of the difference. The control voltage is applied to a replenishment control for controlling the replenishment rate of a constituent chemical of the plating process.
摘要翻译：在无电镀工艺中控制电镀的方法。连续监测电镀速率。将电镀速率与设定点电镀速率进行比较。导出的控制电压与电镀速率和期望电镀速率的差值，差值的积分以及差分的导数成正比。控制电压被施加到用于控制电镀处理的组成化学品的补充速率的补充控制。

8. 发明授权

US06348737B1 Metallic interlocking structure 失效
标题翻译：形成金属互锁结构
公开(公告)号：US06348737B1
公开(公告)日：2002-02-19
申请号：US09517847
申请日：2000-03-02
申请人： Gerald G. Advocate, Jr. , Francis J. Downes, Jr. , Luis J. Matienzo , Ronald A. Kaschak , John S. Kresge , Daniel C. Van Hart
发明人： Gerald G. Advocate, Jr. , Francis J. Downes, Jr. , Luis J. Matienzo , Ronald A. Kaschak , John S. Kresge , Daniel C. Van Hart
IPC分类号： H01L2348
CPC分类号： H01L23/5226 , H01L23/49827 , H01L2924/0002 , H05K3/0035 , H05K3/027 , H05K3/06 , H05K3/383 , H05K3/421 , H05K3/4644 , H05K2201/0248 , H05K2201/09509 , H05K2201/09563 , H05K2203/0307 , H05K2203/0353 , H01L2924/00
摘要： An electronic structure including a metallic interlocking structure for bonding a conductive plated layer to metal surface, and a method of forming the electronic structure. The method provides a substrate having a metallic sheet within a dielectric layer. The metallic sheet includes a metal such as copper. An opening in the substrate, such as a blind via, is formed by laser drilling through the dielectric layer and partially through the metallic sheet. If the opening is a blind via, then the laser drilling is within an outer ring of the blind via cross section using a laser beam having a target diameter between about 20% and about 150% of a radius of the blind via cross section. A surface at the bottom of the opening, called a “blind surface,” includes a metallic protrusion formed by the laser drilling, such that the metallic protrusion is integral with a portion of the blind surface. The metallic protrusion includes the metal of the metallic sheet and at least one constituent element from the dielectric layer. The metallic protrusion is then etched to form a metallic interlocking structure that is integral with the portion of the blind surface. The metallic interlocking structure includes discrete metallic fibers, with each metallic fiber having a curved (or curled) geometry. Each metallic fiber has its own unique composition that includes the metal, at least one constituent element of the dielectric layer, or both.
摘要翻译：一种电子结构，包括用于将导电镀层接合到金属表面的金属互锁结构，以及形成电子结构的方法。该方法提供了在电介质层内具有金属片的衬底。金属片包括铜等金属。通过激光钻孔穿过电介质层并且部分地穿过金属片，形成诸如盲孔之类的衬底中的开口。如果开口是盲孔，则激光钻孔是通过横截面的盲孔通过横截面的半径的约20％至约150％之间的目标直径的激光束在盲孔的外环内。在开口底部的称为“盲面”的表面包括通过激光钻孔形成的金属突起，使得金属突起与盲表面的一部分成一体。金属突起包括金属片的金属和来自电介质层的至少一个构成元件。然后蚀刻金属突起以形成与盲表面的一部分成一体的金属互锁结构。金属互锁结构包括分立的金属纤维，每个金属纤维具有弯曲（或卷曲）的几何形状。每种金属纤维具有其独特的组成，其包括金属，介电层的至少一个构成元件，或两者。

9. 发明授权

US5334461A Product formed by method of controlling resistivity of plated metal 失效
标题翻译：通过控制镀金属电阻率的方法形成的产品
公开(公告)号：US5334461A
公开(公告)日：1994-08-02
申请号：US794368
申请日：1991-11-13
申请人： Melanie A. Day , Ronald A. Kaschak , Steven A. Schubert
发明人： Melanie A. Day , Ronald A. Kaschak , Steven A. Schubert
IPC分类号： C23C18/31 , C23C18/16 , C23C18/40 , H05K3/18 , B32B5/14 , B32B15/20
CPC分类号： C23C18/1675 , H05K3/187 , Y10S428/931 , Y10S428/936 , Y10T428/12458
摘要： Method and product resulting therefrom of controlling the residual resistivity of an electrolessly deposited metal by first, calculating the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.
摘要翻译：由此产生的方法和产品首先控制无电沉积金属的残留电阻率，计算沉积金属的残余电阻率与其沉积速率之间的数学关系，其次，沉积所述金属以产生预定的残留电阻率。

10. 发明授权

US5189261A Electrical and/or thermal interconnections and methods for obtaining such 失效
标题翻译：电和/或热互连以及获得这种互连的方法
公开(公告)号：US5189261A
公开(公告)日：1993-02-23
申请号：US598466
申请日：1990-10-09
申请人： Lawrence C. Alexander , Bernd K. Appelt , David K. Balkin , James J. Hansen , Joseph Hromek , Ronald A. Kaschak , John M. Lauffer , Irving Memis , Magan S. Patel , Andrew M. Seman , Robin A. Susko
发明人： Lawrence C. Alexander , Bernd K. Appelt , David K. Balkin , James J. Hansen , Joseph Hromek , Ronald A. Kaschak , John M. Lauffer , Irving Memis , Magan S. Patel , Andrew M. Seman , Robin A. Susko
IPC分类号： H05K1/11 , H01L23/538 , H05K1/02 , H05K3/00 , H05K3/40 , H05K3/44 , H05K7/20
CPC分类号： H01L23/5384 , H05K3/4038 , H05K3/4046 , H05K3/44 , H01L2924/0002 , H05K1/0206 , H05K2201/09554 , H05K2201/10234 , H05K2201/10303 , H05K2201/10401 , H05K2201/10871 , H05K2203/107 , H05K2203/1105 , H05K2203/128 , H05K3/0035 , Y10S428/901 , Y10T29/49155
摘要： Circuit boards or cards containing metallic layers on opposite major surfaces of a dielectric substrate whereby electrical and/or thermal interconnection between the metallic layers is provided in vias that extend through one of the metallic layers, and the dielectric substrate and into the other metallic layer.
摘要翻译：电介质基板的相对的主表面上包含金属层的电路板或卡片，从而在金属层之间提供电和/或热互连，其通孔延伸穿过金属层之一以及电介质基板并进入另一金属层。

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