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1. 发明申请

US20060259468A1 Methods for electronic records management 审中-公开
标题翻译：电子记录管理方法
公开(公告)号：US20060259468A1
公开(公告)日：2006-11-16
申请号：US11126984
申请日：2005-05-10
申请人： Michael Brooks , Siobhan Brown , Alistair Craig , Philip Crooks , Alan Gilmore , Neal Gordon , Graham Lee , Bernadette Mccoy , Connor Mulholland , Desmond Murphy , Andrew Reid , Geoff Taylor
发明人： Michael Brooks , Siobhan Brown , Alistair Craig , Philip Crooks , Alan Gilmore , Neal Gordon , Graham Lee , Bernadette Mccoy , Connor Mulholland , Desmond Murphy , Andrew Reid , Geoff Taylor
IPC分类号： G06F17/30
CPC分类号： H04L51/22 , G06F16/958 , H04L51/34 , H04L67/1095
摘要： Systems and methods for the management and organization of electronic records are disclosed. These systems and methods provide the user with capabilities such as inputting and retrieving documents, searching for documents and sharing documents across an organization. The systems and methods also allow the capture of unstructured electronic records not typically associated with document management systems like, for example, email or instant message conversations, allow for remote update of replicated data between electronic record management systems to ensure integrity and consistency of the electronic records, allow for structured replication of electronic records between remote and master systems, and provide a mechanism for rectifying multiple disposal rules that may apply to the same electronic record.
摘要翻译：披露了管理和组织电子记录的系统和方法。这些系统和方法为用户提供了输入和检索文档，搜索文档和跨组织共享文档等功能。这些系统和方法还允许捕获通常不与文档管理系统相关联的非结构化电子记录，例如电子邮件或即时消息对话，允许在电子记录管理系统之间远程更新复制数据，以确保电子记录管理系统的完整性和一致性记录，允许在远程系统和主系统之间进行电子记录的结构化复制，并提供一种纠正可能适用于同一电子记录的多个处理规则的机制。

2. 发明申请

US20060141682A1 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation 有权
公开(公告)号：US20060141682A1
公开(公告)日：2006-06-29
申请号：US11360756
申请日：2006-02-23
申请人： Geoff Taylor , Scott Duncan
发明人： Geoff Taylor , Scott Duncan
IPC分类号： H01L21/8232
CPC分类号： H01L29/155 , H01L21/8252 , H01L27/0605 , H01L29/0646 , H01L29/0653 , H01L29/0821 , H01L29/0843 , H01L29/1004 , H01L29/1066 , H01L29/1075 , H01L29/66318 , H01L29/7371 , H01L29/74 , H01L29/7783 , H03K17/79 , H03M1/667 , H03M1/74 , H03M1/808
摘要： A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). The etch stop layer(s) preferably comprise AlAs that functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The series of layers preferably comprise group III-V materials.

3. 发明申请

US20050018730A1 Semiconductor laser array device employing modulation doped quantum well structures 有权
公开(公告)号：US20050018730A1
公开(公告)日：2005-01-27
申请号：US10627043
申请日：2003-07-25
申请人： Geoff Taylor , Scott Duncan
发明人： Geoff Taylor , Scott Duncan
IPC分类号： H01S5/183 , H01S5/40 , H01S5/42 , H01S5/00
CPC分类号： H01S5/423 , B82Y20/00 , G02F1/01716 , G02F2201/346 , H01L27/15 , H01S5/06203 , H01S5/18313 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/3086 , H01S5/4087
摘要： An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The array of multi-wavelength thyristor devices may be used to realize devices that provide a variety of optoelectronic functions, such as an array of thyristor-based lasers that emit light at different wavelengths and/or an array of thyristor-based detectors that detect light at different wavelengths (e.g., for wavelength-division-multiplexing applications).

4. 发明申请

US20070019900A1 Integrated circuit for programmable optical delay 有权
标题翻译：用于可编程光延迟的集成电路
公开(公告)号：US20070019900A1
公开(公告)日：2007-01-25
申请号：US11424012
申请日：2006-06-14
申请人： Geoff Taylor , Jianhong Cai , Daniel Upp
发明人： Geoff Taylor , Jianhong Cai , Daniel Upp
IPC分类号： G02B6/12
CPC分类号： H01Q1/525 , H03M3/43 , H03M3/454 , H03M3/456 , H04B1/525
摘要： Interference caused by the propagation of a transmit signal transmitted from a transmit antenna to a receive antenna is effectively cancelled by an improved signal cancellation system. The system includes an interference cancellation signal generator that generates a time-delayed and amplitude-reduced representation of said transmit signal. A summing stage is operably coupled to the interference cancellation signal generator and the receive antenna. The summing stage subtracts the time-delayed and amplitude-reduced representation of the transmit signal from a receive signal to substantially cancel the interference. The interference cancellation signal generator preferably includes a novel programmable optical delay line that introduces a variable amount of optical delay to an optical signal derived from said transmit signal in addition to a thyristor-based sigma delta modulator that converts samples of the transmit signal to into a digital signal in the optical domain.
摘要翻译：通过改进的信号消除系统有效地消除由从发射天线发射到接收天线的发射信号的传播引起的干扰。该系统包括产生所述发射信号的时间延迟和幅度减小的表示的干扰消除信号发生器。求和级可操作地耦合到干扰消除信号发生器和接收天线。求和级从接收信号中减去发射信号的时间延迟和幅度减小的表示，以基本上消除干扰。干扰消除信号发生器优选地包括一种新颖的可编程光学延迟线，其将可变量的光学延迟引入到从所述发射信号导出的光学信号，以及基于可控硅的Σ-Δ调制器，其将发射信号的采样转换为光域中的数字信号。

5. 发明申请

US20050230705A1 Thz detection employing modulation doped quantum well device structures 有权
标题翻译：采用调制掺杂量子阱器件结构的Thz检测
公开(公告)号：US20050230705A1
公开(公告)日：2005-10-20
申请号：US10512501
申请日：2003-04-28
申请人： Geoff Taylor
发明人： Geoff Taylor
IPC分类号： H01L20060101 , H01L27/146 , H01L27/148 , H01L29/205 , H01L29/417 , H01L29/74 , H01L31/0304 , H01L31/0352 , H01L31/111 , H01L31/115
CPC分类号： H01L31/111 , B82Y20/00 , H01L27/14643 , H01L27/14658 , H01L27/14806 , H01L27/14843 , H01L27/1485 , H01L29/205 , H01L29/74 , H01L31/03046 , H01L31/035236 , H01L31/035263 , H01L31/115 , Y02E10/544
摘要： An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adapted to receive electromagnetic radiation in a desired portion of the THz region, are electrically coupled (or integrally formed with) the p-channel injector electrodes of the heterojunction thyristor device such the that antenna elements are electrically connected to the p-type modulation doped quantum well interface of the device. THz radiation supplied by the antenna elements to the p-type quantum well interface increases electron temperature of a two-dimensional electron gas at the p-type modulation doped quantum well interface thereby producing a current resulting from thermionic emission over a potential barrier provided by said first-type modulation doped quantum well interface. This current flows over the p-type channel barrier to the ntype quantum well interface, thereby causing charge to accumulate in the n-type quantum well interface. The accumulated charge in the n-type quantum well interface is related to the intensity of the received THz radiation. The heterojunction-thyristor-based THz detector is suitable for many applications, including data communication applications and imaging applications.
摘要翻译：改进的THz检测机构包括由n型量子阱基双极晶体管和p型量子阱基双极晶体管逻辑形成的异质结晶闸管结构，其垂直布置以共享公共集电极区域。适于在THz区域的所需部分接收电磁辐射的天线元件与异质结晶闸管器件的p沟道注入器电极电耦合（或整体形成），使得天线元件电连接到p 型调制掺杂量子阱接口。由天线元件向p型量子阱界面提供的太赫兹辐射增加了在p型调制掺杂量子阱界面处的二维电子气的电子温度，从而产生由所述电子势垒产生的电流，第一类调制掺杂量子阱界面。该电流流过p型沟道势垒到n型量子阱界面，从而使电荷累积在n型量子阱界面中。 n型量子阱界面中的累积电荷与接收的THz辐射的强度有关。基于异质结晶闸管的THz检测器适用于许多应用，包括数据通信应用和成像应用。

6. 发明申请

US20050145882A1 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation 有权
标题翻译：采用至少一个调制掺杂量子阱结构和一个或多个蚀刻停止层的半导体器件用于精确的接触形成
公开(公告)号：US20050145882A1
公开(公告)日：2005-07-07
申请号：US11044636
申请日：2005-01-10
申请人： Geoff Taylor , Scott Duncan
发明人： Geoff Taylor , Scott Duncan
IPC分类号： H01L21/331 , H01L21/335 , H01L29/15 , H01L29/737 , H01L29/80 , H03K17/79 , H03M1/66 , H03M1/74 , H03M1/80 , H01L29/06
CPC分类号： H01L29/66318 , H01L29/155 , H01L29/66462 , H01L29/7371 , H01L29/802 , H03K17/79 , H03M1/667 , H03M1/74 , H03M1/808
摘要： A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). In another aspect of the present invention, a high performance bipolar transistor device is realized from this structure by implanting p-type ions in a interdigitization pattern that forms a plurality of p-type ion implant regions on both sides of the p-type modulation doped quantum well structure to a depth that penetrates the n-type ohmic contact layer. The interdigitization pattern of the p-type implants reduces capacitance between the p-type modulation doped quantum well structure and the n-type ohmic contact layer to enable higher frequency operation.
摘要翻译：半导体器件包括在衬底上形成的一系列层，所述层包括包括n型欧姆接触层，p型调制掺杂量子阱结构，n型调制掺杂量子阱结构的第一多个层，以及包括p型欧姆接触层的第四多个层。蚀刻停止层用于形成与n型欧姆接触层的接触并与n型调制掺杂量子阱结构接触。还提供薄盖层以保护某些层免于氧化。优选地，每个这样的蚀刻停止层被制成足够薄以允许在从该结构实现的光电子/电子器件的操作期间电流隧穿（包括异质结晶闸管器件，n沟道HFET器件，p沟道HFET器件，p型量子阱器件，基极双极晶体管器件和n型量子阱基双极晶体管器件）。在本发明的另一方面，通过将p型离子注入到在p型调制掺杂的两侧上形成多个p型离子注入区的叉指形式中，从该结构实现了高性能双极晶体管器件量子阱结构到穿透n型欧姆接触层的深度。 p型植入物的叉指形式降低p型调制掺杂量子阱结构和n型欧姆接触层之间的电容，以实现更高频率的操作。

7. 发明申请

US20070257275A1 Imaging Method Utilizing Thyristor-Based Pixel Elements 有权
标题翻译：使用基于晶闸管的像素元件的成像方法
公开(公告)号：US20070257275A1
公开(公告)日：2007-11-08
申请号：US11780745
申请日：2007-07-20
申请人： Geoff Taylor
发明人： Geoff Taylor
IPC分类号： H01L29/732
CPC分类号： H01L31/1113 , B82Y20/00 , H01L27/14652 , H01L27/14806 , H01L27/14812 , H01L29/7373 , H01L29/7783 , H01L31/0304 , H01L31/035236 , H04N5/335 , Y02E10/544
摘要： An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped quantum well interfaces that are spaced apart from one another. Incident radiation within a predetermined wavelength resonates within the cavity of a given pixel element for absorption therein that causes charge accumulation. The accumulated charge is related to the intensity of the incident radiation. The heterojunction-thyristor-based pixel element is suitable for many imaging applications, including CCD-based imaging arrays and active-pixel imaging arrays.
摘要翻译：改进的成像阵列（和相应的操作方法）包括设置在形成在基板上的谐振腔内的多个异质结晶闸管的像素元件。每个基于晶闸管的像素元件包括彼此间隔开的互补n型和p型调制掺杂量子阱界面。在预定波长内的入射辐射在给定的像素元件的空腔内谐振，用于吸收其中的电荷积累。累积电荷与入射辐射强度有关。基于异质结晶闸管的像素元件适用于许多成像应用，包括基于CCD的成像阵列和有源像素成像阵列。

8. 发明申请

US20060141651A1 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation 有权
公开(公告)号：US20060141651A1
公开(公告)日：2006-06-29
申请号：US11360759
申请日：2006-02-23
申请人： Geoff Taylor , Scott Duncan
发明人： Geoff Taylor , Scott Duncan
IPC分类号： H01L21/00
CPC分类号： H01L29/155 , H01L21/30612 , H01L21/30621 , H01L29/0646 , H01L29/0653 , H01L29/0821 , H01L29/0843 , H01L29/1004 , H01L29/1066 , H01L29/1075 , H01L29/66318 , H01L29/7371 , H01L29/74 , H01L29/7783 , H03K17/79 , H03M1/667 , H03M1/74 , H03M1/808
摘要： A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). The etch stop layer(s) preferably comprise AlAs that functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The series of layers preferably comprise group III-V materials.

9. 发明申请

US20050238360A1 Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same 有权
标题翻译：多功能光电晶闸管和集成电路和采用相同的光收发器
公开(公告)号：US20050238360A1
公开(公告)日：2005-10-27
申请号：US10832223
申请日：2004-04-26
申请人： Geoff Taylor , Rohinton Dehmubed
发明人： Geoff Taylor , Rohinton Dehmubed
IPC分类号： H01S5/062 , H01S5/12 , H01S5/183 , H04B10/00 , H04B10/152
CPC分类号： H01S5/06203 , H01S5/18319 , H01S5/18358 , H04B10/40
摘要： An integrated circuit (and optical transceiver module) is disclosed employing an optoelectronic thyristor device formed within a resonant cavity on a substrate, and a circuit integrally formed on the substrate. The circuit dynamically switches the thyristor between a transmit mode configuration and a receive mode configuration. In the transmit mode configuration, the thyristor is modulated between a non-lasing state and a lasing state in accordance with an input digital electrical signal, to thereby produce an output digital optical data signal that corresponds to the input digital electrical signal. In the receive mode configuration, the thyristor device is modulated between an non-lasing OFF state and a non-lasing ON state in accordance with an input digital optical signal that is injected into the resonant cavity, to thereby produce an output digital electrical data signal that corresponds to the input digital optical signal. The resonant cavity may be adapted for vertical emission and injection of light, or for in-plane emission and injection of light. For in-plane configurations, a passive waveguide device guides light to and from the resonant cavity. The integrated circuit (and optical transceiver module) can be used in optical fiber applications as well as free-space applications.
摘要翻译：公开了一种集成电路（以及光收发器模块），其使用形成在衬底上的谐振腔内的光电晶闸管器件，以及一体地形成在衬底上的电路。电路在发射模式配置和接收模式配置之间动态切换晶闸管。在发送模式配置中，晶闸管根据输入数字电信号在非激光状态和激光状态之间进行调制，从而产生对应于输入数字电信号的输出数字光数据信号。在接收模式配置中，晶闸管器件根据注入到谐振腔中的输入数字光信号在非激光关断状态和非激光导通状态之间进行调制，从而产生输出数字电数据信号对应于输入数字光信号。谐振腔可以适用于垂直发射和注入光，或用于面内发射和注入光。对于平面内配置，无源波导器件将光引导到谐振腔。集成电路（和光收发模块）可用于光纤应用以及自由空间应用。

10. 发明申请

US20050121663A1 Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit 有权
标题翻译：用于单片集成电路的具有精密栅极掺杂的反向沟道器件的装置和方法
公开(公告)号：US20050121663A1
公开(公告)日：2005-06-09
申请号：US11039559
申请日：2005-01-20
申请人： Geoff Taylor
发明人： Geoff Taylor
IPC分类号： H01L29/20 , H01L29/778 , H01S5/026 , H01S5/183 , H01S5/323 , H01L29/06
CPC分类号： H01S5/18372 , H01L29/2003 , H01L29/7785 , H01S5/0261 , H01S5/06203 , H01S5/06226 , H01S5/18308 , H01S5/18313 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/3211 , H01S5/32341 , H01S5/32366
摘要： A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detectors.β
摘要翻译：在单片基板上通过将两片平面掺杂与宽带覆层一起添加到伪晶高电子迁移率晶体管（PHEMT）结构的顶部，获得一系列高速晶体管和光电子器件。两片具有相同的极性，与PHEMT的调制掺杂相反，并且它们被特定厚度的轻掺杂层分离。该组合与未掺杂材料的特定厚度的PHEMT调制掺杂分离。充电片薄且高度掺杂。顶部充电片实现低栅极接触电阻，并且底部电荷表定义了相对于PHEMT的调制掺杂层的场效应晶体管（FET）的电容。该结构产生pnp双极晶体管，增强型和耗尽型FET，垂直腔表面发射激光器和谐振腔检测器

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