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1. 发明申请

US20110294072A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY 有权
标题翻译：使用光刻技术制造半导体器件的方法
公开(公告)号：US20110294072A1
公开(公告)日：2011-12-01
申请号：US13117667
申请日：2011-05-27
申请人： Mi-Ra PARK , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
发明人： Mi-Ra PARK , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/091 , G03F7/40
摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.
摘要翻译：使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。这里，第二开口可以比第一开口窄得多。

2. 发明申请

US20080305636A1 METHOD OF FORMING FINE PATTERN EMPLOYING SELF-ALIGNED DOUBLE PATTERNING 失效
标题翻译：形成使用自对准双文件的精细图案的方法
公开(公告)号：US20080305636A1
公开(公告)日：2008-12-11
申请号：US12132548
申请日：2008-06-03
申请人： Kyoung-Mi KIM , Jae-Ho KIM , Young-Ho KIM , Myung-Sun KIM , Youn-Kyung WANG , Mi-Ra PARK
发明人： Kyoung-Mi KIM , Jae-Ho KIM , Young-Ho KIM , Myung-Sun KIM , Youn-Kyung WANG , Mi-Ra PARK
IPC分类号： H01L21/311
CPC分类号： H01L21/0337
摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.
摘要翻译：提供了使用自对准双重图案形成精细图案的方法。该方法包括提供基板。在基板上形成第一掩模图案。在具有第一掩模图案的基板上形成反应层。使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。去除未反应的反应层以暴露牺牲层。在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

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