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1. 发明申请

US20110300712A1 Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
标题翻译：使用等离子体处理光刻胶图案形成光刻胶图案的方法
公开(公告)号：US20110300712A1
公开(公告)日：2011-12-08
申请号：US13103375
申请日：2011-05-09
申请人： Kyoung-Mi Kim , Jeong-Ju Park , Mi-Ra Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
发明人： Kyoung-Mi Kim , Jeong-Ju Park , Mi-Ra Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
IPC分类号： H01L21/308 , H01L21/312
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139 , H01L27/11521
摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.
摘要翻译：形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。

2. 发明授权

US08551689B2 Methods of manufacturing semiconductor devices using photolithography 有权
标题翻译：使用光刻制造半导体器件的方法
公开(公告)号：US08551689B2
公开(公告)日：2013-10-08
申请号：US13117667
申请日：2011-05-27
申请人： Mi-Ra Park , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
发明人： Mi-Ra Park , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
IPC分类号： G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/091 , G03F7/40
摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.
摘要翻译：使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。这里，第二开口可以比第一开口窄得多。

3. 发明申请

US20110294072A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY 有权
标题翻译：使用光刻技术制造半导体器件的方法
公开(公告)号：US20110294072A1
公开(公告)日：2011-12-01
申请号：US13117667
申请日：2011-05-27
申请人： Mi-Ra PARK , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
发明人： Mi-Ra PARK , Kyoung-Mi Kim , Jeong-Ju Park , Bo-Hee Lee , Jae-Ho Kim , Young-Ho Kim
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/091 , G03F7/40
摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.
摘要翻译：使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。这里，第二开口可以比第一开口窄得多。

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