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1. 发明申请

US20090107834A1 CHALCOGENIDE TARGET AND METHOD 审中-公开
标题翻译： CHALCOGENIDE目标和方法
公开(公告)号：US20090107834A1
公开(公告)日：2009-04-30
申请号：US11927605
申请日：2007-10-29
申请人： Mengqi Ye , Rong Tao , Hua Chung , Goichi Yoshidome , William Rhodes , Peijun Ding
发明人： Mengqi Ye , Rong Tao , Hua Chung , Goichi Yoshidome , William Rhodes , Peijun Ding
IPC分类号： C23C14/06 , C23C14/34 , C23C14/35
CPC分类号： C23C14/06 , C23C14/0623 , C23C14/3407 , C23C14/3414 , C23C14/345 , C23C14/351 , C23C14/358 , H01J37/3408 , H01J37/3426 , H01J37/3455
摘要： A sputtering target for a sputtering chamber comprises a sputtering plate composed of a chalcogenide material comprising an average yield strength of from about 40 MPa to about 120 MPa and a thermal conductivity of at least about 2.8 W/(m·K). In one version the sputtering plate is composed of a chalcogenide material with a stoichiometric ratio that varies by less than about 5% throughout the body of the sputtering plate. In another version, the sputtering plate is composed of a chalcogenide material having an average grain size of at least 20 microns, and an oxygen content of less than 600 weight ppm. The sputtering target is sputtered by applying a pulsed DC voltage to the sputtering target.
摘要翻译：溅射室的溅射靶包括由硫族化物材料构成的溅射板，该溅射板包括约40MPa至约120MPa的平均屈服强度和至少约2.8W /（m.K）的热导率。在一个版本中，溅射板由化学计量比在溅射板的整个体内变化小于约5％的硫族化物材料组成。在另一个版本中，溅射板由平均粒度为至少20微米，氧含量小于600重量ppm的硫族化物材料组成。通过向溅射靶施加脉冲的DC电压来溅射溅射靶。

2. 发明授权

US08500963B2 Sputtering of thermally resistive materials including metal chalcogenides 有权
标题翻译：包括金属硫族化物在内的耐热材料的溅射
公开(公告)号：US08500963B2
公开(公告)日：2013-08-06
申请号：US11778648
申请日：2007-07-17
申请人： Mengqi Ye , Keith A. Miller , Peijun Ding , Goichi Yoshidome , Rong Tao
发明人： Mengqi Ye , Keith A. Miller , Peijun Ding , Goichi Yoshidome , Rong Tao
IPC分类号： C23C14/35
CPC分类号： C23C14/0623 , C23C14/351 , C23C14/541
摘要： A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.
摘要翻译：用于形成相变存储器的金属硫族化物的等离子体溅射方法，例如锗锑碲化物（GST）。将基材保持在选定的温度，在该温度下，材料以无定形或结晶形式沉积。 GST具有低温无定形范围和105-120°C的过渡带隔离的高温结晶范围。具有小于10s脉冲宽度的小于50％正脉冲的双极脉冲溅射清洁目标，同时保持溅射等离子体。室屏蔽的温度保持在有利于结晶沉积的温度下，或者它们可以用电弧喷涂铝或用结晶取向的铜或铝涂覆。

3. 发明申请

US20120175245A1 GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS 审中-公开
标题翻译：相变材料的GAP填充改进方法
公开(公告)号：US20120175245A1
公开(公告)日：2012-07-12
申请号：US13422671
申请日：2012-03-16
申请人： Mengqi Ye , Hua Chung , Goichi Yoshidome , Philip Fulmer
发明人： Mengqi Ye , Hua Chung , Goichi Yoshidome , Philip Fulmer
IPC分类号： C23C14/34
CPC分类号： C23C14/358 , C23C14/046 , C23C14/0623 , C23C14/345 , C23C14/3485 , H01J37/321 , H01J37/32706 , H01J37/3408 , H01J37/347
摘要： Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.
摘要翻译：提供了用于沉积相变材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将衬底定位在处理室中，所述处理室具有耦合到第一电源的相变材料基靶，耦合到第二电源的一个或多个线圈，向处理室提供处理气体，以连续DC或脉冲DC功率偏置基于相变材料的靶，向线圈施加电力以产生电感耦合等离子体，向衬底支撑件施加偏压，从目标溅射材料，电离溅射的材料，以及将溅射的材料沉积在衬底表面上。

4. 发明申请

US20080116067A1 PHYSICAL VAPOR DEPOSITION CHAMBER HAVING AN ADJUSTABLE TARGET 审中-公开
标题翻译：具有可调节目标的物理蒸气沉积室
公开(公告)号：US20080116067A1
公开(公告)日：2008-05-22
申请号：US11950881
申请日：2007-12-05
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.
摘要翻译：本发明涉及具有可旋转衬底基座和至少一个可移动倾斜目标的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。

5. 发明申请

US20060096857A1 Physical vapor deposition chamber having a rotatable substrate pedestal 审中-公开
标题翻译：物理气相沉积室具有可旋转的基板基座
公开(公告)号：US20060096857A1
公开(公告)日：2006-05-11
申请号：US10984265
申请日：2004-11-08
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal. Embodiments of the invention facilitate deposition of highly uniform thin films. In further embodiments, one or more sputtering targets are movably disposed above the pedestal. The orientation of the targets relative to the pedestal may be adjusted laterally, vertically or angularly. In one embodiment, the target may be adjusted between angles of about 0 to 45 degreees relative to an axis of pedestal rotation.
摘要翻译：本发明涉及具有可转动的基板底座的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。在另外的实施例中，一个或多个溅射靶可移动地设置在基座上方。目标相对于基座的取向可以横向，垂直或有角度地调整。在一个实施例中，可以相对于基座旋转轴线在约0至45度的角度之间调整目标。

6. 发明申请

US20060096851A1 Physical vapor deposition chamber having an adjustable target 审中-公开
标题翻译：具有可调目标的物理气相沉积室
公开(公告)号：US20060096851A1
公开(公告)日：2006-05-11
申请号：US10984291
申请日：2004-11-08
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.
摘要翻译：本发明涉及具有可旋转衬底基座和至少一个可移动倾斜目标的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。

7. 发明授权

US08454804B2 Protective offset sputtering 失效
公开(公告)号：US08454804B2
公开(公告)日：2013-06-04
申请号：US11262193
申请日：2005-10-28
申请人： Mengqi Ye , Zhendong Liu , Peijun Ding
发明人： Mengqi Ye , Zhendong Liu , Peijun Ding
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/225 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

8. 发明授权

US08460519B2 Protective offset sputtering 失效
标题翻译：保护性偏移溅射
公开(公告)号：US08460519B2
公开(公告)日：2013-06-11
申请号：US11389610
申请日：2006-03-23
申请人： Mengqi Ye , Zhendong Liu , Peijun Ding
发明人： Mengqi Ye , Zhendong Liu , Peijun Ding
IPC分类号： C23C14/35
CPC分类号： H01L21/67011 , C23C14/225 , C23C14/35 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，在物理气相沉积（PVD）室中的溅射可以利用相对于衬底的横向偏移和倾斜的目标。另一方面，可以减小目标功率以增强膜保护。在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。在另一方面，可以提供快门以在启动条件下保护基板。描述和要求保护其他实施例。

9. 发明申请

US20070099438A1 Thin film deposition 有权
标题翻译：薄膜沉积
公开(公告)号：US20070099438A1
公开(公告)日：2007-05-03
申请号：US11260899
申请日：2005-10-28
申请人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
发明人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02046 , C23C14/345 , C23C14/35 , H01L21/28017 , H01L21/2855
摘要： A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
摘要翻译：一种系统，方法和装置能够在衬底上彼此层叠各种材料层，而不会使衬底暴露于环境空气的压力和污染物直到堆叠完成。在一个方面，层叠层可以包括一个或多个绝缘膜的绝缘层和一个或多个导电金属层膜的导电金属层。在另一方面，可以将正电压脉冲和负电压脉冲的偏置信号施加到沉积室的靶，以便以合适的方式沉积目标材料。在另一方面，一个或多个沉积室可以具有与其结合的泵，其将涡轮分子泵和低温泵组合以在该室中产生超高真空。描述和要求保护其他特征。

10. 发明授权

US07884032B2 Thin film deposition 有权
标题翻译：薄膜沉积
公开(公告)号：US07884032B2
公开(公告)日：2011-02-08
申请号：US11260899
申请日：2005-10-28
申请人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
发明人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
IPC分类号： H01L21/469
CPC分类号： H01L21/02046 , C23C14/345 , C23C14/35 , H01L21/28017 , H01L21/2855
摘要： A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
摘要翻译：一种系统，方法和装置能够在衬底上彼此层叠各种材料层，而不会使衬底暴露于周围空气的压力和污染物直到堆叠完成。在一个方面，层叠层可以包括一个或多个绝缘膜的绝缘层和一个或多个导电金属层膜的导电金属层。在另一方面，可以将正电压脉冲和负电压脉冲的偏置信号施加到沉积室的靶，以便以合适的方式沉积目标材料。在另一方面，一个或多个沉积室可以具有与其结合的泵，其将涡轮分子泵和低温泵组合以在该室中产生超高真空。描述和要求保护其他特征。

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