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1. 发明申请

US20200247966A1 TWO-DIMENSIONAL COORDINATION POLYMERS 审中-公开
公开(公告)号：US20200247966A1
公开(公告)日：2020-08-06
申请号：US16778713
申请日：2020-01-31
申请人： Meng Wang , Yuxia Shen , Sefaattin Tongay , Matthew Green , Ying Qin , Sijie Yang
发明人： Meng Wang , Yuxia Shen , Sefaattin Tongay , Matthew Green , Ying Qin , Sijie Yang
IPC分类号： C08J5/18 , C08J7/06 , B05D1/38 , B05D1/40 , B05D3/12
摘要： Forming a two-dimensional polymeric sheet includes translating a portion of a flexible substrate through a first liquid precursor to coat the portion of the flexible substrate with the first liquid precursor, thereby yielding a precursor-coated portion of the flexible substrate. The precursor-coated portion of the flexible substrate is translated through an interface between the first liquid precursor and a second liquid precursor, thereby reacting the first liquid precursor on the precursor-coated portion of the flexible substrate with the second liquid precursor to yield a polymer-coated portion of the flexible substrate.

2. 发明申请

US20200331843A1 TWO-DIMENSIONAL COORDINATION POLYMERS 审中-公开
公开(公告)号：US20200331843A1
公开(公告)日：2020-10-22
申请号：US16852288
申请日：2020-04-17
申请人： Matthew Green , Sefaattin Tongay , Meng Wang , Ying Qin
发明人： Matthew Green , Sefaattin Tongay , Meng Wang , Ying Qin
IPC分类号： C07C209/32 , C08F4/60
摘要： Octaaminonaphthalene and a method of synthesizing octaaminonaphthalene are described. A two-dimensional coordination polymer and a method of synthesizing the two-dimensional coordination polymer are described. The two-dimensional coordination polymer includes ligands including anchorage sites, and metal linkers, each metal linker including a metal and an organic moiety. Each metal linker is coupled to two ligands via the anchorage sites. Synthesizing the two-dimensional coordination polymer includes contacting a first liquid precursor with a second liquid precursor at an interface, reacting the metal linker and the water-soluble ligand to yield a two-dimensional coordination polymer at the interface, and removing the two-dimensional coordination polymer from the interface.

3. 发明申请

US20220306566A1 TWO-DIMENSIONAL COORDINATION POLYMERS 有权
公开(公告)号：US20220306566A1
公开(公告)日：2022-09-29
申请号：US17841150
申请日：2022-06-15
申请人： Matthew Green , Sefaattin Tongay , Meng Wang , Ying Qin
发明人： Matthew Green , Sefaattin Tongay , Meng Wang , Ying Qin
IPC分类号： C07C209/32 , C08F4/60
摘要： Octaaminonaphthalene and a method of synthesizing octaaminonaphthalene are described. A two-dimensional coordination polymer and a method of synthesizing the two-dimensional coordination polymer are described. The two-dimensional coordination polymer includes ligands including anchorage sites, and metal linkers, each metal linker including a metal and an organic moiety. Each metal linker is coupled to two ligands via the anchorage sites. Synthesizing the two-dimensional coordination polymer includes contacting a first liquid precursor with a second liquid precursor at an interface, reacting the metal linker and the water-soluble ligand to yield a two-dimensional coordination polymer at the interface, and removing the two-dimensional coordination polymer from the interface.

4. 发明申请

US20190276476A1 TWO-DIMENSIONAL METAL-ORGANIC-FRAMEWORKS 审中-公开
公开(公告)号：US20190276476A1
公开(公告)日：2019-09-12
申请号：US16294558
申请日：2019-03-06
申请人： Bohan Shan , Yuxia Shen , Sefaattin Tongay , Bin Mu , Ashutosh Agarwal , Ying Qin
发明人： Bohan Shan , Yuxia Shen , Sefaattin Tongay , Bin Mu , Ashutosh Agarwal , Ying Qin
IPC分类号： C07F3/06 , C07F1/08
摘要： Synthesizing a metal-organic-framework includes combining a first solution and a second solution to yield a synthetic medium. The first solution typically includes a solvent, an inhibitor, a metal capping agent, a ligand, and a metal source, and the second solution typically includes a deprotonating agent and a buffer. The metal and the ligand are reacted in the synthetic medium to yield a two-dimensional metal-organic-framework in the form of a nanosheet, and the two-dimensional metal-organic-framework is removed from the synthetic medium. The two-dimensional metal-organic framework has an aspect ratio of at least 300 or at least 1000.

5. 发明公开

US20230383427A1 TWO-DIMENSIONAL METAL-ORGANIC FRAMEWORK ALLOY PHOTOCATALYSTS 审中-公开
公开(公告)号：US20230383427A1
公开(公告)日：2023-11-30
申请号：US18449197
申请日：2023-08-14
申请人： Bin Mu , Sefaattin Tongay , Bohan Shan , Yuxia Shen , Joseph Winarta
发明人： Bin Mu , Sefaattin Tongay , Bohan Shan , Yuxia Shen , Joseph Winarta
IPC分类号： C25B11/095 , C07F15/06 , C25B1/04 , C25B1/55
CPC分类号： C25B11/095 , C07F15/06 , C25B1/04 , C25B1/55
摘要： A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0

6. 发明授权

US11753731B2 Two-dimensional metal-organic framework alloy photocatalysts 有权
公开(公告)号：US11753731B2
公开(公告)日：2023-09-12
申请号：US16872142
申请日：2020-05-11
申请人： Bin Mu , Sefaattin Tongay , Bohan Shan , Yuxia Shen , Joseph Winarta
发明人： Bin Mu , Sefaattin Tongay , Bohan Shan , Yuxia Shen , Joseph Winarta
IPC分类号： C25B11/095 , C07F15/06 , C25B1/04 , C25B1/55
CPC分类号： C25B11/095 , C07F15/06 , C25B1/04 , C25B1/55
摘要： A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0

7. 发明申请

US20210189586A1 SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS 有权
公开(公告)号：US20210189586A1
公开(公告)日：2021-06-24
申请号：US17127364
申请日：2020-12-18
申请人： Sefaattin Tongay , Dipesh Trivedi , Guven Turgut , Mohammed Sayyad , Ying Qin
发明人： Sefaattin Tongay , Dipesh Trivedi , Guven Turgut , Mohammed Sayyad , Ying Qin
IPC分类号： C30B1/02 , C01B19/04 , C03C17/23 , C04B35/468
摘要： Forming a two-dimensional Janus layer includes forming a layer of MX2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

8. 发明申请

US20150010714A1 ION BEAM PROCESSING OF SIC FOR FABRICATION OF GRAPHENE STRUCTURES 审中-公开
标题翻译：用于制造石墨结构的SIC的离子束处理
公开(公告)号：US20150010714A1
公开(公告)日：2015-01-08
申请号：US14236789
申请日：2012-08-23
申请人： Bill R. Appleton , Brent Paul Gila , Sefaattin Tongay , Maxime G. Lemaitre
发明人： Bill R. Appleton , Brent Paul Gila , Sefaattin Tongay , Maxime G. Lemaitre
IPC分类号： C01B31/04
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , Y10S977/734 , Y10S977/844
摘要： A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.
摘要翻译：在SiC衬底上制备石墨烯的方法包括用离子轰击SiC衬底的表面并在轰击的表面退火一部分SiC衬底的体积，以促进在被轰击表面处的碳的聚集，从而形成一层或多层石墨烯表面。离子可以是Si，C或其他离子如Au。退火可以使用加热的热源或通过用至少一个激光束或其他高能量束的照射进行。

9. 发明授权

US08890277B2 Graphite and/or graphene semiconductor devices 有权
标题翻译：石墨和/或石墨烯半导体器件
公开(公告)号：US08890277B2
公开(公告)日：2014-11-18
申请号：US13577964
申请日：2011-03-14
申请人： Arthur Foster Hebard , Sefaattin Tongay
发明人： Arthur Foster Hebard , Sefaattin Tongay
IPC分类号： H01L29/47 , H01L29/812 , H01L29/778 , H01L29/872 , H01L29/16 , H01L29/20
CPC分类号： H01L29/1606 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/7786 , H01L29/78 , H01L29/812 , H01L29/872
摘要： Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.
摘要翻译：提供了用于石墨和/或石墨烯的半导体器件的各种实施例。在一个实施例中，半导体器件包括半导体层和半金属叠层。在另一实施例中，半导体器件包括半导体层和零间隙半导体层。半导体层/零间隙半导体层形成在形成肖特基势垒的半导体层上。在另一个实施例中，半导体器件包括第一和第二半导体层以及半金属叠层。在另一个实施例中，半导体器件包括第一和第二半导体层和零间隙半导体层。第一半导体层包括第一半导体材料，第二半导体层包括在第一半导体层上形成的第二半导体材料。在形成肖特基势垒的第二半导体层上形成半金属层/零间隙半导体层。

10. 发明申请

US20130001516A1 GRAPHITE AND/OR GRAPHENE SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20130001516A1
公开(公告)日：2013-01-03
申请号：US13577964
申请日：2011-03-14
申请人： Arthur Foster Hebard , Sefaattin Tongay
发明人： Arthur Foster Hebard , Sefaattin Tongay
IPC分类号： H01L29/78 , H01L29/778 , H01L29/872
CPC分类号： H01L29/1606 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/7786 , H01L29/78 , H01L29/812 , H01L29/872
摘要： Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

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