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    • 10. 发明授权
    • Copper sputtering target
    • 铜溅射靶
    • US6149776A
    • 2000-11-21
    • US191253
    • 1998-11-12
    • Howard TangImran HashimRichard HongPeijun Ding
    • Howard TangImran HashimRichard HongPeijun Ding
    • C23C14/34H01J37/34
    • H01J37/3435C23C14/3407
    • The present invention generally provides an apparatus and a method for physical vapor deposition of a metal onto a substrate comprising a physical vapor deposition chamber and a target disposed in an upper portion of the chamber. The target comprises a backing plate having a central portion and a flange portion attachable to the physical vapor deposition chamber, a sputterable portion extending from the central portion of the backing plate, and an annular ridge disposed on a surface of the flange portion. Preferably, the sputterable portion of the target includes a restriction side wall that restricts entry of plasma and back-scattered particles into the dark space gap between an upper shield and the target.
    • 本发明通常提供一种将金属物理气相沉积到衬底上的装置和方法,该衬底包括物理气相沉积室和设置在腔室上部的靶。 目标包括具有中心部分和可连接到物理气相沉积室的凸缘部分的背板,从背板的中心部分延伸的可溅射部分和设置在凸缘部分的表面上的环形凸脊。 优选地,靶的可溅射部分包括限制侧壁,其限制等离子体和背散射粒子进入上屏蔽和靶之间的暗空间间隙。