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    • 10. 发明授权
    • Fusion-bond electrical feed-through
    • 融合电子馈电
    • US5923952A
    • 1999-07-13
    • US897124
    • 1997-07-18
    • M. Salleh IsmailRaffi M. GarabedianMax E. NielsenGary J. PashbyJeffrey K. K. Wong
    • M. Salleh IsmailRaffi M. GarabedianMax E. NielsenGary J. PashbyJeffrey K. K. Wong
    • G01P15/125B81B3/00B81C1/00G01L9/00G01L9/12H01L21/762H01L21/764H01L21/768H01L23/10H01L29/84H01L21/00
    • B81C1/00293B81C1/00301G01L9/0042G01L9/0073H01L21/76251H01L21/764H01L21/76898H01L23/10B81B2207/092B81C2203/019B81C2203/036H01L2924/0002
    • A semiconductor device has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment of the device includes depressions that contain edges of a diffused feed-through so that imperfections at the edge of the diffusion do not interfere with bonding. The flexible structure is bonded to elevated areas thus hiding the imperfections. In one embodiment, a first elevated region is surrounded by a second elevated region, and diffusion for the feed-through extends from an active region in the cavity across the first elevated region with edges of the diffusion being between the first and second elevated regions. The flexible structure can thus bond to the first and second elevated regions without interference from the edge of the diffused feed-through. A via through the flexible structure to the first elevated region provides electrical contact with the active region. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.
    • 半导体器件具有结合到半导体子结构以形成空腔的柔性结构。 柔性结构粘合在导电馈通上,而不会干扰通过接合形成的气密密封。 该装置的一个实施例包括含有扩散馈通边缘的凹陷,使得扩散边缘处的缺陷不会妨碍接合。 柔性结构结合到高架区域,从而隐藏缺陷。 在一个实施例中,第一升高区域被第二升高区域包围,并且用于馈通的扩散从空腔中的有源区域穿过第一升高区域延伸,扩散边缘在第一和第二升高区域之间。 因此,柔性结构可以连接到第一和第二升高区域而不受来自扩散馈通的边缘的干扰。 通过柔性结构到第一升高区域的通孔提供与活性区域的电接触。 另一个实施例具有半导体结构中的表面或掩埋阱,并且从空腔中的有源区域延伸到柔性结构的周边外的点。 该井提供导电的馈通结构,而不产生将干扰密封空腔的接合的缺陷。