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1. 发明授权

US6004886A Liquid phase deposition method for forming silicon dioxide film on HGCDTE or other II-VI semiconductor substrate 失效
标题翻译：用于在HGCDTE或其他II-VI半导体衬底上形成二氧化硅膜的液相沉积方法
公开(公告)号：US6004886A
公开(公告)日：1999-12-21
申请号：US960913
申请日：1997-10-30
申请人： Mau-Phon Houng , Yeong-Her Wang , Na-Fu Wang
发明人： Mau-Phon Houng , Yeong-Her Wang , Na-Fu Wang
IPC分类号： H01L21/471 , H01L21/31 , H01L21/469
CPC分类号： H01L21/471
摘要： A method for growing a silicon dioxide film on a HgCdTe substrate includes a first step in which the HgCdTe substrate is cleaned with an alkaline aqueous solution. The cleaned HgCdTe substrate is then dried before being immersed in a liquid phase deposition solution in which the silicon dioxide film is deposited on the surface of the HgCdTe substrate at the rate as high as 1672 .ANG./hr. The silicon dioxide film has a refraction rate as high as 1.465.
摘要翻译：在HgCdTe衬底上生长二氧化硅膜的方法包括第一步骤，其中用碱性水溶液清洗HgCdTe衬底。然后将清洁的HgCdTe基板干燥，然后浸入其中二氧化硅膜以高达1672安格/小时的速率沉积在HgCdTe基板的表面上的液相沉积溶液中。二氧化硅膜的折射率高达1.465。

2. 发明授权

US06689645B2 Method of surface treatment on the improvement of electrical properties for doped silicon oxides (SiO2) films 有权
标题翻译：表面处理改善掺杂氧化硅（SiO2）薄膜电性能的方法
公开(公告)号：US06689645B2
公开(公告)日：2004-02-10
申请号：US09851974
申请日：2001-05-10
申请人： Mau-Phon Houng , Yeong-Her Wang , Wai-Jyh Chang
发明人： Mau-Phon Houng , Yeong-Her Wang , Wai-Jyh Chang
IPC分类号： H01L21335
CPC分类号： H01L21/02052 , H01L21/31629
摘要： In the fabrication of gate oxides in IC process, a suitable cleaning/etching process is required to remove the native oxides and reduce surface microroughness in addition to standard RCA cleaning. For ultrathin oxide thickness (
摘要翻译：在IC工艺中栅极氧化物的制造中，除了标准的RCA清洁之外，还需要适当的清洁/蚀刻工艺去除天然氧化物并降低表面微观粗糙度。对于超薄氧化物厚度（<10nm），具有无自然氧化物和H钝化硅（Si）表面的重要问题是确保高击穿场，高电荷到击穿和低漏电流。根据这些概念，我们提出了一种简单的两步氟化氢（HF）蚀刻工艺的发明，以改善液相沉积氟化硅氧化物（LPD-SiOF）的电性能，包括有效去除天然氧化物，降低界面陷阱密度（〜10 10 eV-1 cm -2），表面微粗糙度（Ra = 0.1nm）的降低和击穿场的提高（〜9.7 MV / cm）。此外，快速热退火（RTA）也用于进一步提高氧化物质量。发现击穿场增加18％，界面陷阱密度降低33％。除了适用于LPD-氧化硅（SiO 2）之外，该技术也适用于其他掺杂氧化物。该技术有助于在未来的ULSI工艺中获得用于超薄栅极氧化物的高质量和低成本的氧化硅。

3. 发明授权

US06326317B1 Method for fabricating metal oxide semiconductor field effect transistor (MOSFET) 有权
标题翻译：制造金属氧化物半导体场效应晶体管（MOSFET）的方法
公开(公告)号：US06326317B1
公开(公告)日：2001-12-04
申请号：US09399680
申请日：1999-09-21
申请人： Hwei-Heng Wang , Yeong-Her Wang , Mau-Phon Houng
发明人： Hwei-Heng Wang , Yeong-Her Wang , Mau-Phon Houng
IPC分类号： H01L2131
CPC分类号： H01L29/66522 , H01L21/02241 , H01L21/02255 , H01L21/28264 , H01L21/30621 , H01L21/31666
摘要： Disclosed is a method for manufacturing a metal oxide semiconductor FET (MOSFET), which utilizes a low-temperature liquid phase oxidation for III-V group. The method includes the steps of (a) providing a substrate, (b) forming an epitaxial layer on the substrate, (c) defining and forming a drain and a source on a portion of the epitaxial layer, (d) forming a recess in an another portion of the epitaxial layer, (e) forming an oxide layer on a surface of the recess by relatively low-temperature oxidation, and (f) forming a gate on a portion of the oxide layer between the drain and source. In addition, the method further includes two selective procedures, that is, a synchronic sulfurated passivation process which can be performed with the growth of the oxide film simultaneously, and a rapid thermal annealing (RTA) process.
摘要翻译：公开了一种利用III-V族低温液相氧化的金属氧化物半导体FET（MOSFET）的制造方法。该方法包括以下步骤：（a）提供衬底，（b）在衬底上形成外延层，（c）在外延层的一部分上界定并形成漏极和源极;（d）所述外延层的另一部分，（e）通过相对低温氧化在所述凹部的表面上形成氧化物层，以及（f）在所述漏极和源极之间的所述氧化物层的一部分上形成栅极。此外，该方法还包括两个选择性程序，即可以同时进行氧化膜生长的同步硫化钝化工艺，以及快速热退火（RTA）工艺。

4. 发明授权

US5998304A Liquid phase deposition method for growing silicon dioxide film on III-V semiconductor substrate treated with ammonium hydroxide 失效
标题翻译：在用氢氧化铵处理的III-V半导体衬底上生长二氧化硅膜的液相沉积方法
公开(公告)号：US5998304A
公开(公告)日：1999-12-07
申请号：US922186
申请日：1997-09-02
申请人： Mau-Phon Houng , Yeong-Her Wang , Chien-Jung Huang
发明人： Mau-Phon Houng , Yeong-Her Wang , Chien-Jung Huang
IPC分类号： H01L21/316 , H01L21/8252
CPC分类号： H01L21/316 , Y10S438/905 , Y10S438/906 , Y10S438/93 , Y10S438/933
摘要： A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30.degree. C.-50.degree. C.) on a III-V semiconductor, such as a gallium arsenide substrate. The silicon dioxide film may be used in a bipolar transistor or as a field oxide of MOS (metal oxide semiconductor). The III-V semiconductor substrate is chemically treated with an alkaline aqueous solution such as ammonium hydroxide so that the surface of the III-V semiconductor substrate is modified to facilitate the growth of the silicon dioxide film by liquid phase deposition. The growth rate of the silicon dioxide film is as fast as 1265 .ANG./hr. The silicon dioxide film has a refractive index ranging between 1.372 and 1.41.
摘要翻译：液相沉积方法涉及使用过饱和的氢氟硅酸水溶液，用于在III-V半导体如砷化镓衬底上在低温（30℃-50℃）下生长二氧化硅膜。二氧化硅膜可以用在双极晶体管中或作为MOS（金属氧化物半导体）的场氧化物。 III-V族半导体衬底用碱性水溶液如氢氧化铵进行化学处理，使得III-V族半导体衬底的表面被改性，以利于通过液相沉积生长二氧化硅膜。二氧化硅膜的生长速度与1265安培/小时一样快。二氧化硅膜的折射率在1.372和1.41之间。

5. 发明授权

US5958519A Method for forming oxide film on III-V substrate 失效
标题翻译：在III-V衬底上形成氧化膜的方法
公开(公告)号：US5958519A
公开(公告)日：1999-09-28
申请号：US929639
申请日：1997-09-15
申请人： Hwei-Heng Wang , Yeong-Her Wang , Mau-Phon Houng
发明人： Hwei-Heng Wang , Yeong-Her Wang , Mau-Phon Houng
IPC分类号： H01L21/316 , B05D1/18
CPC分类号： H01L21/31654
摘要： A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH value, and (c) placing the III-V substrate into the growth solution to form the oxide film on the III-V substrate.
摘要翻译：提供了在III-V基板上形成氧化膜的方法。该方法包括以下步骤：（a）制备含有IIIA离子的酸性溶液，（b）将碱性溶液加入到酸性溶液中以提供特定pH值的生长溶液，和（c）将III-V底物进入生长溶液以在III-V底物上形成氧化膜。

6. 发明授权

US07439091B2 Light-emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07439091B2
公开(公告)日：2008-10-21
申请号：US11709543
申请日：2007-02-22
申请人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
发明人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/44 , H01L2933/0091
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.
摘要翻译：对发光二极管（LED）及其制造方法进行说明。 LED的制造方法包括以下步骤。提供了一种光源外延结构，其中光源外延结构具有在相对侧上的第一表面和第二表面，并且衬底被放置在光源外延结构的第一表面上。在发光体外延结构的第二表面上形成金属层。进行阳极氧化步骤以氧化金属层，以形成金属氧化物层。执行蚀刻步骤以去除金属氧化物层的一部分，以在金属氧化物层中形成多个孔。

7. 发明申请

US20070221927A1 Light-emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070221927A1
公开(公告)日：2007-09-27
申请号：US11709543
申请日：2007-02-22
申请人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
发明人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/44 , H01L2933/0091
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.
摘要翻译：对发光二极管（LED）及其制造方法进行说明。 LED的制造方法包括以下步骤。提供了一种光源外延结构，其中光源外延结构具有在相对侧上的第一表面和第二表面，并且衬底被放置在光源外延结构的第一表面上。在发光体外延结构的第二表面上形成金属层。进行阳极氧化步骤以氧化金属层，以形成金属氧化物层。执行蚀刻步骤以去除金属氧化物层的一部分，以在金属氧化物层中形成多个孔。

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