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1. 发明申请

US20050116293A1 Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate 有权
标题翻译：晶体管结构，存储单元，DRAM以及在半导体衬底中制造晶体管结构的方法
公开(公告)号：US20050116293A1
公开(公告)日：2005-06-02
申请号：US10975085
申请日：2004-10-28
申请人： Matthias Goldbach , Ulrich Frey , Bjorn Fischer
发明人： Matthias Goldbach , Ulrich Frey , Bjorn Fischer
IPC分类号： H01L21/336 , H01L21/8242 , H01L29/423 , H01L27/01
CPC分类号： H01L27/10888 , H01L27/10855 , H01L27/10867 , H01L27/10873 , H01L29/42368
摘要： Transistor structures, with one source/drain region connected to a charge storage device to be insulated includes an asymmetric gate conductor structure. At a first side wall, which faces the one source/drain region, the asymmetric gate conductor structure has a side wall oxide with a greater thickness and a bird's beak structure with a greater length than at an opposite, second side wall. An effective channel length is increased for the same feature size of the gate conductor structure. Memory cells can be realized in a higher density.
摘要翻译：晶体管结构，具有连接到待绝缘的电荷存储装置的一个源极/漏极区域包括非对称栅极导体结构。在面向一个源极/漏极区域的第一侧壁处，不对称栅极导体结构具有较大厚度的侧壁氧化物和具有比相对的第二侧壁长的长度的鸟嘴结构。对于栅极导体结构的相同特征尺寸，有效沟道长度增加。可以以更高的密度实现存储单元。

2. 发明授权

US07518477B2 Electromechanical circuit breaker and method of breaking the current in said electromechanical circuit breaker 有权
标题翻译：机电断路器和断路器中断电流的方法
公开(公告)号：US07518477B2
公开(公告)日：2009-04-14
申请号：US11917783
申请日：2006-06-12
申请人： Serge Martin , Henri Duffour , Raphaël Kissling , Bjorn Fischer
发明人： Serge Martin , Henri Duffour , Raphaël Kissling , Bjorn Fischer
IPC分类号： H01H9/44
CPC分类号： H01H9/44
摘要： The electromechanical circuit breaker is intended to establish and break the current in a main circuit (3, 4) and comprises a fixed contact element (5) and a moving contact element (6) which in a first position are in electrical contact with each other for carrying the current of the main circuit (3, 4). Said moving contact element (6) is adapted to be displaced to a second position in which it is separated from the fixed contact element (5) so that the current in the main circuit is cut off. The circuit breaker is provided with a blow-out device (2) comprising a magnetising coil (8) traversed by a magnetising current for producing a magnetic field (26) adapted to drive an arc generated by the separation of said two contact elements (5, 6) into an arc extinction means. The blow-out device (2) comprises electrodes (12) electrically connected to the magnetising coil (8) and adapted to cooperate with said arc in such a manner that the latter generates said magnetising current in the magnetising coil (8). The magnetic field for driving the arc is generated by the action of said arc. Said electrodes (12) are located in such a relationship with said contact elements (5, 6) that the arc generated by the separation of said two contact elements is at least partially separated into a first arc (13a) between one contact element (5) and the electrodes (12) and a second arc (13b) between the electrodes (12) and the other contact element (6). Said first or second arc (13a, 13b) is set in parallel coupling with said magnetising coil (8) connected on one side to the electrodes (12) and on the other side to one of the contact elements (5, 6). These features allow to obtain high breaking efficiency and performances even when breaking smaller currents.
摘要翻译：机电断路器旨在建立和断开主电路（3,4）中的电流，并且包括固定接触元件（5）和可移动接触元件（6），其在第一位置彼此电接触用于承载主电路（3,4）的电流。所述移动接触元件（6）适于移动到第二位置，在该第二位置，所述移动接触元件（6）与固定接触元件（5）分离，使得主电路中的电流被切断。断路器设置有吹出装置（2），其包括由磁化电流穿过的磁化线圈（8），用于产生适于驱动通过分离所述两个接触元件（5）产生的电弧的磁场（26），6）进入消弧手段。吹出装置（2）包括电连接到磁化线圈（8）并适于与所述电弧配合的电极（12），使得所述电极在所述磁化线圈（8）中产生所述磁化电流。用于驱动电弧的磁场由所述电弧的作用产生。所述电极（12）与所述接触元件（5,6）处于这种关系，使得由所述两个接触元件的分离产生的电弧至少部分地分离成一个接触元件（5）之间的第一弧（13a））和在电极（12）和另一个接触元件（6）之间的电极（12）和第二弧（13b）。所述第一或第二弧（13a，13b）被设置为与一端连接到电极（12）并且在另一侧与所述接触元件（5,6）中的一个并联连接的所述磁化线圈（8）。这些特征即使在断开更小的电流时也能获得高的分断效率和性能。

3. 发明申请

US20110306875A1 OPTICAL COHERENCE TOMOGRAPHY SYSTEM AND OPTICAL COHERENCE TOMOGRAPHY METHOD 审中-公开
标题翻译：光学相干坐标系统和光学相干方法
公开(公告)号：US20110306875A1
公开(公告)日：2011-12-15
申请号：US12937328
申请日：2008-04-11
申请人： Bjorn Fischer , Edmund Koch
发明人： Bjorn Fischer , Edmund Koch
IPC分类号： A61B6/03 , G01B11/24
CPC分类号： G01B9/02091 , G01B9/02044 , G01B9/02063
摘要： The present invention relates to an optical coherence tomography system having an interferometer, in particular a Michelson interferometer, having a reference arm (R) for variable adjustment of an optical reference path length and having a measuring arm (M) in which an object (sample P) to be scanned can be disposed and/or is disposed in a sample volume (PV),characterised in that a focusing system (F) which is configured for focusing divergently incident light beams on a common point (target point Z) situated in the sample volume is disposed in the measuring arm between the beam splitter of the interferometer and the sample volume.
摘要翻译：本发明涉及一种具有干涉仪，特别是迈克尔逊干涉仪的光学相干断层摄影系统，其具有用于光学参考路径长度的可变调节的参考臂（R），并具有测量臂（M），其中物体可以将待扫描的P）设置和/或设置在样本体积（PV）中，其特征在于，聚焦系统（F）被配置为将发散的入射光束聚焦在位于样品体积设置在干涉仪的分束器与样品体积之间的测量臂中。

4. 发明申请

US20060022248A1 Electronic data memory device for a high read current 审中-公开
标题翻译：用于高读取电流的电子数据存储器件
公开(公告)号：US20060022248A1
公开(公告)日：2006-02-02
申请号：US11167386
申请日：2005-06-27
申请人： Bjorn Fischer , Franz Hofmann , Richard Luyken , Andreas Spitzer
发明人： Bjorn Fischer , Franz Hofmann , Richard Luyken , Andreas Spitzer
IPC分类号： H01L27/108
CPC分类号： H01L27/10873 , H01L29/7851
摘要： Electronic data memory device for a high read current The invention provides a memory device arranged on a substrate (401) and having at least one memory cell (100) The memory cell comprises a storage capacitor (200) for storing an electrical charge and a selection transistor (300) for selecting the memory cell (100). The selection transistor comprises a first conduction electrode (301), a second conduction electrode (302) and a control electrode (303) , the control electrode (303) being provided by a gate unit (400) having a fin (405) projecting from the substrate (401), which fin is surrounded by a gate oxide layer (406) and a gate electrode layer (403) in such a way that first and second gate elements (408a, 408b) are provided at opposite lateral areas of the fin (405), a third gate element (408c) being provided at an area of the fin (405) that is parallel to the surface of the substrate (401).
摘要翻译：用于高读取电流的电子数据存储器件本发明提供一种布置在衬底（401）上并具有至少一个存储单元（100）的存储器件。存储单元包括用于存储电荷的存储电容器（200）晶体管（300），用于选择存储单元（100）。选择晶体管包括第一导电电极（301），第二导电电极（302）和控制电极（303），控制电极（303）由栅极单元（400）提供，栅极单元（400）具有从基板（401），其被栅极氧化物层（406）和栅极电极层（403）包围，使得第一和第二栅极元件（408a，408b）设置在第一和第二栅极元件（408a，408b）的相对侧向区域所述翅片（405），第三栅极元件（408c）设置在所述鳍状物（405）的与所述基板（401）的表面平行的区域。

5. 发明申请

US20140139845A1 OPTICAL COHERENCE TOMOGRAPHY SYSTEM AND OPTICAL COHERENCE TOMOGRAPHY METHOD 审中-公开
标题翻译：光学相干坐标系统和光学相干方法
公开(公告)号：US20140139845A1
公开(公告)日：2014-05-22
申请号：US14165158
申请日：2014-01-27
申请人： Bjorn Fischer , Edmund Koch
发明人： Bjorn Fischer , Edmund Koch
IPC分类号： G01B9/02
CPC分类号： G01B9/02091 , G01B9/02044 , G01B9/02063
摘要： The present invention relates to an optical coherence tomography system having an interferometer, in particular a Michelson interferometer, having a reference arm for variable adjustment of an optical reference path length and having a measuring arm in which an object to be scanned can be disposed and/or is disposed in a sample volume, wherein a focusing system which is configured for focusing divergently incident light beams on a common point situated in the sample volume is disposed in the measuring arm between the beam splitter of the interferometer and the sample volume.
摘要翻译：本发明涉及一种具有干涉仪，特别是迈克尔逊干涉仪的光学相干断层摄影系统，该干涉仪具有用于光学参考路径长度的可变调节的参考臂，并具有能够设置待扫描物体的测量臂和/ 或设置在样本体积中，其中配置用于将散射入射的光束聚焦在位于样本体积中的公共点上的聚焦系统设置在干涉仪的分束器与样本体积之间的测量臂中。

6. 发明申请

US20080197113A1 Electromechanical Circuit Breaker and Method of Breaking the Current in Said Electromechanical Circuit Breaker 有权
公开(公告)号：US20080197113A1
公开(公告)日：2008-08-21
申请号：US11917783
申请日：2006-06-12
申请人： Serge Martin , Henri Duffour , Raphael Kissling , Bjorn Fischer
发明人： Serge Martin , Henri Duffour , Raphael Kissling , Bjorn Fischer
IPC分类号： H01H33/18
CPC分类号： H01H9/44
摘要： The electromechanical circuit breaker is intended to establish and break the current in a main circuit (3, 4) and comprises a fixed contact element (5) and a moving contact element (6) which in a first position are in electrical contact with each other for carrying the current of the main circuit (3, 4). Said moving contact element (6) is adapted to be displaced to a second position in which it is separated from the fixed contact element (5) so that the current in the main circuit is cut off. The circuit breaker is provided with a blow-out device (2) comprising a magnetising coil (8) traversed by a magnetising current for producing a magnetic field (26) adapted to drive an arc generated by the separation of said two contact elements (5, 6) into an arc extinction means. The blow-out device (2) comprises electrodes (12) electrically connected to the magnetising coil (8) and adapted to cooperate with said arc in such a manner that the latter generates said magnetising current in the magnetising coil (8). The magnetic field for driving the arc is generated by the action of said arc. Said electrodes (12) are located in such a relationship with said contact elements (5, 6) that the arc generated by the separation of said two contact elements is at least partially separated into a first arc (13a) between one contact element (5) and the electrodes (12) and a second arc (13b) between the electrodes (12) and the other contact element (6). Said first or second arc (13a, 13b) is set in parallel coupling with said magnetising coil (8) connected on one side to the electrodes (12) and on the other side to one of the contact elements (5, 6). These features allow to obtain high breaking efficiency and performances even when breaking smaller currents.

7. 发明申请

US20070040202A1 Semiconductor memory cell array having self-aligned recessed gate MOS transistors and method for forming the same 审中-公开
标题翻译：具有自对准凹栅MOS晶体管的半导体存储单元阵列及其形成方法
公开(公告)号：US20070040202A1
公开(公告)日：2007-02-22
申请号：US11206306
申请日：2005-08-18
申请人： Gerhard Enders , Marc Strasser , Peter Voigt , Bjorn Fischer
发明人： Gerhard Enders , Marc Strasser , Peter Voigt , Bjorn Fischer
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L27/10876 , H01L27/10861
摘要： In a semiconductor memory including an array of memory cells, each memory cell includes a trench capacitor, the trench capacitor including an inner electrode, an outer electrode and a dielectric layer disposed between the inner electrode and the outer electrode, and a selection transistor, the selection transistor including a first source/drain area, a second source/drain area and a channel region disposed between the first source/drain area and the second source/drain area in a recess, the trench capacitor and the selection transistor of each memory cell are disposed side by side, the first source/drain area of the selection transistor being electrically connected to the inner electrode of the trench capacitor, the recess in which the channel region of the selection transistor is formed being located self aligned between the trench capacitor of the memory cell and the trench capacitor of an adjacent memory cell.
摘要翻译：在包括存储单元阵列的半导体存储器中，每个存储单元包括沟槽电容器，所述沟槽电容器包括内电极，外电极和设置在内电极和外电极之间的电介质层，以及选择晶体管，选择晶体管，其包括第一源极/漏极区域，第二源极/漏极区域和设置在凹部中的第一源极/漏极区域和第二源极/漏极区域之间的沟道区域，每个存储器单元的沟槽电容器和选择晶体管并排配置，选择晶体管的第一源极/漏极区域电连接到沟槽电容器的内部电极，形成选择晶体管的沟道区域的凹槽位于沟槽电容器的沟槽电容器之间，存储单元和相邻存储单元的沟槽电容器。

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