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1. 发明授权

US07645694B2 Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent 有权
标题翻译：使用极性超临界溶剂开发或除去嵌段共聚物或PMMA-b-S基抗蚀剂
公开(公告)号：US07645694B2
公开(公告)日：2010-01-12
申请号：US12143445
申请日：2008-06-20
申请人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
发明人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
IPC分类号： H01L21/00
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译：公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。

2. 发明申请

US20080248655A1 DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT 有权
标题翻译：使用极性超临界溶剂开发或去除嵌段共聚物或PMMA-b-S基电阻
公开(公告)号：US20080248655A1
公开(公告)日：2008-10-09
申请号：US12143445
申请日：2008-06-20
申请人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
发明人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
IPC分类号： H01L21/31 , G03C5/00
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译：公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。

3. 发明授权

US07407554B2 Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent 有权
标题翻译：使用极性超临界溶剂开发或除去嵌段共聚物或PMMA-b-S基抗蚀剂
公开(公告)号：US07407554B2
公开(公告)日：2008-08-05
申请号：US10907688
申请日：2005-04-12
申请人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
发明人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
IPC分类号： B08B7/04 , G03F7/34
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译：公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。

4. 发明申请

US20060228653A1 DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT 有权
标题翻译：使用极性超临界溶剂开发或去除嵌段共聚物或PMMA-b-S基电阻
公开(公告)号：US20060228653A1
公开(公告)日：2006-10-12
申请号：US10907688
申请日：2005-04-12
申请人： Matthew Colburn , Dmitriy Shneyder , Shahab Siddiqui
发明人： Matthew Colburn , Dmitriy Shneyder , Shahab Siddiqui
IPC分类号： G03C5/00
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译：公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。

5. 发明申请

US20110166683A1 Real Time WIP Optimizer 审中-公开
标题翻译：实时WIP优化器
公开(公告)号：US20110166683A1
公开(公告)日：2011-07-07
申请号：US12683454
申请日：2010-01-07
申请人： Vincent Vazquez , Jeffrey Paul Gifford , Dmitriy Shneyder
发明人： Vincent Vazquez , Jeffrey Paul Gifford , Dmitriy Shneyder
IPC分类号： G06F17/00
CPC分类号： G05B19/41865 , G05B2219/32293 , Y02P90/20 , Y02P90/86
摘要： A method identifies a real time downstream to processing capability within a production environment using a computerized device. The processing sequences perform operations utilizing one or more tools. The method also determines if an upstream tool capacity is greater than a downstream tool capacity. When the upstream tool capacity is greater than the downstream tool capacity the method calculates an overlap value. The method then adjusts the run rate for the upstream tool to by dividing the run rate of the upstream tool by the overlap value. The method is a centralized system that references tool processing parameters to determine processing capability. In the cases where the upstream tool has a significantly shorter processing time than the downstream tool, the system is used to determine if value should be added at the upstream tool to avoid WIP build up at the downstream tool.
摘要翻译：一种方法使用计算机化设备在生产环境中识别处理能力的下游实时。处理顺序使用一个或多个工具执行操作。该方法还确定上游工具容量是否大于下游工具容量。当上游工具容量大于下游工具容量时，该方法计算重叠值。然后，该方法通过将上游工具的运行速率除以重叠值来调整上游工具的运行速率。该方法是一个集中系统，它引用工具处理参数来确定处理能力。在上游工具比下游工具具有明显缩短的处理时间的情况下，系统用于确定是否应在上游工具添加值以避免在下游工具上生成WIP。

6. 发明授权

US07869002B2 Reducing contamination in immersion lithography 有权
标题翻译：降低浸渍光刻中的污染
公开(公告)号：US07869002B2
公开(公告)日：2011-01-11
申请号：US12182282
申请日：2008-07-30
申请人： Dmitriy Shneyder , Raschid J. Bezama , Dario L. Goldfarb , Kafal Lai
发明人： Dmitriy Shneyder , Raschid J. Bezama , Dario L. Goldfarb , Kafal Lai
IPC分类号： G03B27/58
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译：一种用于减少浸没式光刻中的污染的方法，包括将半导体晶片保持在晶片卡盘的支撑表面上，晶片卡盘在其中具有间隙，位于晶片的外边缘附近的间隙，以及包含一定量的浸没光刻流体; 并且在晶片卡盘内提供流体循环路径，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度。

7. 发明授权

US07807335B2 Immersion lithography contamination gettering layer 失效
标题翻译：浸没光刻污染吸气层
公开(公告)号：US07807335B2
公开(公告)日：2010-10-05
申请号：US11144857
申请日：2005-06-03
申请人： Daniel A. Corliss , Dario Gil , Dario Leonardo Goldfarb , Steven John Holmes , David Vaclav Horak , Kurt Rudolf Kimmel , Karen Elizabeth Petrillo , Dmitriy Shneyder
发明人： Daniel A. Corliss , Dario Gil , Dario Leonardo Goldfarb , Steven John Holmes , David Vaclav Horak , Kurt Rudolf Kimmel , Karen Elizabeth Petrillo , Dmitriy Shneyder
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.
摘要翻译：在光致抗蚀剂层中形成图像的方法。该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层，吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射，不透明区域阻挡光化辐射，透明区域对于光化辐射是透明的，光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。

8. 发明授权

US08299584B2 Alignment of wafers for 3D integration 有权
标题翻译：用于3D集成的晶片对齐
公开(公告)号：US08299584B2
公开(公告)日：2012-10-30
申请号：US12719241
申请日：2010-03-08
申请人： Dmitriy Shneyder , Srinivasan Rangarajan , Michael J. Shapiro , Anthony K. Stamper , Huilong Zhu
发明人： Dmitriy Shneyder , Srinivasan Rangarajan , Michael J. Shapiro , Anthony K. Stamper , Huilong Zhu
IPC分类号： H01L23/48
CPC分类号： B32B38/00 , G01B11/27 , G01J3/02 , G06F15/00 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： A method of aligning substrates, e.g., semiconductor wafers, is provided in which a first substrate can be at least coarsely aligned atop a second substrate. Each substrate can have a pattern thereon, wherein the pattern of the first substrate can be aligned with a window of the first substrate. A return signal can be returned from simultaneously illuminating the patterns of the first and second substrates through the window in the first substrate. The return signal can be compared to at least one stored signal to determine relative misalignment between the first and second substrates. A position of at least one of the first and second substrates can be altered relative to a position of the other of the first and second substrates to address the misalignment.
摘要翻译：提供了对准例如半导体晶片的衬底的方法，其中第一衬底可以至少在第二衬底的顶部上对齐。每个衬底可以具有其上的图案，其中第一衬底的图案可以与第一衬底的窗口对准。可以通过第一衬底中的窗口同时照亮第一和第二衬底的图案来返回返回信号。可以将返回信号与至少一个存储的信号进行比较，以确定第一和第二基板之间的相对不对准。可以相对于第一和第二基板中的另一个的位置改变第一和第二基板中的至少一个的位置，以解决未对准。

9. 发明申请

US20110290039A1 SPECIMEN HANDLING APPARATUS 失效
标题翻译：样品处理设备
公开(公告)号：US20110290039A1
公开(公告)日：2011-12-01
申请号：US12791248
申请日：2010-06-01
申请人： Michael Hatzistergos , Jonathan Levy , Christopher M. Molella , Paul A. Ronsheim , Dmitriy Shneyder , Vincent Vazquez
发明人： Michael Hatzistergos , Jonathan Levy , Christopher M. Molella , Paul A. Ronsheim , Dmitriy Shneyder , Vincent Vazquez
IPC分类号： G01N1/00
CPC分类号： G01N23/2204
摘要： A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.
摘要翻译：提供样品处理装置，并且包括其中限定孔的主体和具有尖端部分和钻头的针，其具有可拆卸地插入孔中，其中末端部分至少部分暴露，孔和钻头各自为形成为使得当钻头插入孔中时，针被迫进入相对于其长轴的第一或第二旋转位置之一。

10. 发明申请

US20080140225A1 DETERMINING ROOT CAUSE FOR ALARM IN PROCESSING SYSTEM 失效
标题翻译：确定加工系统报警的根本原因
公开(公告)号：US20080140225A1
公开(公告)日：2008-06-12
申请号：US11608422
申请日：2006-12-08
申请人： Dmitriy Shneyder , Stephen W. Goodrich , Joseph J. Mezzapelle , Lin Zhou
发明人： Dmitriy Shneyder , Stephen W. Goodrich , Joseph J. Mezzapelle , Lin Zhou
IPC分类号： G05B13/04
CPC分类号： G05B23/0275 , G05B23/0286
摘要： A method, system and computer program product for controlling a processing system are disclosed. Alarms and information regarding operating components within the processing system are collected by a knowledge base and are related to one another therein. Data in the knowledge base is then analyzed to determine a root cause for the alarms.
摘要翻译：公开了一种用于控制处理系统的方法，系统和计算机程序产品。关于处理系统内的操作部件的警报和信息由知识库收集并且彼此相关。然后分析知识库中的数据，以确定警报的根本原因。

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