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    • 3. 发明专利
    • Hermetically sealed electric apparatus
    • 密封电气设备
    • JP2005085867A
    • 2005-03-31
    • JP2003313952
    • 2003-09-05
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ONO HIROSHIHARA HIROMITSU
    • H01F27/04H01G4/224
    • PROBLEM TO BE SOLVED: To provide an electric apparatus that is provided with an internal insulator and an internal circular member to prevent a moisture content from reaching an electric component through a lead wire from a connection terminal in the case where it enters the inside a transformer.
      SOLUTION: The electric apparatus comprises an electric component, a lead wire led from the electric component, a connection terminal connected with the lead wire, a case that incorporates the electric component and has fitting holes wherein the connection terminal penetrates for fitting, a circular member wherein the connection terminal penetrates and whose one surface is in contact with the side surface of the case around the fitting holes, and a circular internal insulator wherein the connection terminal penetrates and whose one side is in contact with the circular member. The internal insulator is provided with a hole for drain that is made through the inner and outer circumferential surfaces.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种设置有内部绝缘体和内部圆形构件的电气设备,以防止其进入所述内部绝缘体和内部圆形构件中的水分含量通过来自连接端子的引线到达电气部件 在变压器内。 电气装置包括电气部件,从电气部件引出的引线,与引线连接的连接端子,具有电气部件的壳体,并具有嵌合孔,其中连接端子穿透以进行安装, 圆形构件,其中连接端子穿透并且其一个表面与装配孔周围的侧表面接触;以及圆形内部绝缘体,其中连接端子穿透并且其一侧与圆形构件接触。 内部绝缘体设置有通过内周面和外周面形成的用于排出的孔。 版权所有(C)2005,JPO&NCIPI
    • 4. 发明专利
    • Semiconductor light-emitting device and method of manufacturing the same
    • 半导体发光器件及其制造方法
    • JP2008277492A
    • 2008-11-13
    • JP2007118338
    • 2007-04-27
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • YAMADA ATSUSHIONO HIROSHISAMONJI KATSUYA
    • H01S5/22
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which comprises a structure capable of preventing a debonding of an electrode in the course of a process, and having an excellent initial characteristic and reliability.
      SOLUTION: In the semiconductor light-emitting device, a first conductive type clad layer, an active layer and a second conductive type clad layer are formed by turns from below on a substrate, and the semiconductor light-emitting device includes a ridge-shaped stripe structure containing at least the second conductive type clad layer. The semiconductor light-emitting device further includes: a dielectric film formed on the side and base of the stripe structure; and an ohmic electrode composed of a conductive film formed on the upper face of the stripe structure.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种半导体发光装置,其包括能够防止在工艺过程中电极脱粘的结构,并且具有优异的初始特性和可靠性。 解决方案:在半导体发光器件中,在衬底上从下方开始形成第一导电型覆盖层,有源层和第二导电型覆盖层,并且半导体发光器件包括脊 至少包含第二导电型覆盖层的条形结构。 半导体发光器件还包括:形成在条形结构的侧面和底部的电介质膜; 以及由条形结构的上表面上形成的导电膜构成的欧姆电极。 版权所有(C)2009,JPO&INPIT
    • 5. 发明专利
    • Semiconductor light emitting device and its fabrication process
    • 半导体发光器件及其制造工艺
    • JP2007103690A
    • 2007-04-19
    • JP2005291927
    • 2005-10-05
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ONO HIROSHITAMURA SATOYUKIKAWAGUCHI MASANARI
    • H01L33/06H01L33/32H01L33/40H01L33/62
    • PROBLEM TO BE SOLVED: To form a reflective electrode of a metal having high reflectivity without decreasing the reflectivity. SOLUTION: A semiconductor light emitting device includes an n-type semiconductor layer 11, a p-type semiconductor layer 13, and an active layer 12 having a multilayer quantum well structure sandwiched by the n-type semiconductor layer and the p-type semiconductor layer. A reflective electrode 14 is formed of a metal exhibiting high reflectivity to emission light from the active layer 12 on the p-type semiconductor layer 13, a nonmetallic protective layer 15 is formed on the reflective electrode 14, and a first cover electrode 16 electrically connected with the reflective electrode 14 through an opening groove 15a is formed on the protective layer 15. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:在不降低反射率的情况下形成具有高反射率的金属的反射电极。 解决方案:半导体发光器件包括n型半导体层11,p型半导体层13和具有夹在n型半导体层和p型半导体层13之间的多层量子阱结构的有源层12。 型半导体层。 反射电极14由对p型半导体层13上的有源层12发射的光具有高反射率的金属形成,在反射电极14上形成非金属保护层15,并且电连接第一覆盖电极16 反射电极14通过开口槽15a形成在保护层15上。版权所有(C)2007,JPO&INPIT
    • 7. 发明专利
    • Electronic component
    • 电子元件
    • JP2003332133A
    • 2003-11-21
    • JP2002139594
    • 2002-05-15
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ONO HIROSHIMIYAUCHI AKIFUMI
    • H01F41/04H01F17/00H01F17/04
    • PROBLEM TO BE SOLVED: To provide an inside structure for excellently holding the joint of an inside conductor without generating delamination, and to provide an electronic component corresponding to high frequency and large current by its manufacturing method. SOLUTION: The inside conductor is provided so that the shortest distance W1 between the inside conductor pattern having a film thickness T1 and a product outer peripheral part is T1÷W1 COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种用于良好地保持内部导体的接合而不产生分层的内部结构,并且通过其制造方法提供对应于高频和大电流的电子部件。 解决方案:内部导体被设置成使得具有膜厚度T1的内部导体图案与产品外周部分之间的最短距离W1为T1÷W1 <0.1。 内部导体图案被设置为使得在内部导体电极连接部分中的膜厚T2和宽度W2为T2÷W2 <0.1。 内部导体图案设置成内部导体通孔连接部的宽度小于通孔导体直径。 提供球形或柱状通孔导体。 形成通孔的磁性片粘附在将通孔导体嵌入内部导体图案的磁性片上,并且通过电镀在其上形成通孔导体。 版权所有(C)2004,JPO
    • 8. 发明专利
    • Manufacturing method for nitride compound semiconductor device
    • 氮化物半导体器件的制造方法
    • JP2005210089A
    • 2005-08-04
    • JP2004365411
    • 2004-12-17
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ONO HIROSHITAMURA SATOYUKIUEDA TETSUZO
    • H01L21/3065H01L21/306H01L21/338H01L29/812H01S5/323
    • PROBLEM TO BE SOLVED: To provide a manufacturing method for a nitride semiconductor device by which damage layers are not formed despite the fact that dry etching is performed, and by which wet etching is performed with a small number of processes and through simple batch processing. SOLUTION: The manufacturing method for the nitride semiconductor device comprises a step to form a nitride semiconductor layer 13 on a base substrate 11, a step to form a conductive film 14 of an electron emitting layer 14b and dry etching mask layer 14a in sequence on a part of the upper surface of the nitride semiconductor layer 13, a step to perform dry etching on the nitride semiconductor layer 13, and a step to perform wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 to the outside through the conductive film 14. COPYRIGHT: (C)2005,JPO&NCIPI
    • 解决的问题:为了提供一种用于氮化物半导体器件的制造方法,尽管进行干法蚀刻也不会形成损伤层,并且通过少量工艺进行湿蚀刻,并且通过简单的 批量处理。 解决方案:氮化物半导体器件的制造方法包括在基底基板11上形成氮化物半导体层13的步骤,形成电子发射层14b的导电膜14和干蚀刻掩模层14a的步骤 在氮化物半导体层13的上表面的一部分上的顺序,在氮化物半导体层13上进行干蚀刻的步骤,以及通过从氮化物半导体层13发射电子而在氮化物半导体层13上进行湿蚀刻的步骤 通过导电膜14到外部。版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • Nitride semiconductor laser device and method of manufacturing the same
    • 氮化物半导体激光器件及其制造方法
    • JP2007311591A
    • 2007-11-29
    • JP2006139794
    • 2006-05-19
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ONO HIROSHISAMONJI KATSUYA
    • H01S5/22H01S5/323
    • PROBLEM TO BE SOLVED: To achieve a long-lived nitride semiconductor laser device having a ridge stripe whose p-side electrode is never peeled and has a scarcely increased contact resistance.
      SOLUTION: The nitride semiconductor laser device includes: a p-type semiconductor layer 14 formed on a substrate 11 and having a ridge stripe 14a; a dielectric layer 15 formed on the p-type semiconductor layer 14; an intermediate adhesive layer 16 formed on the dielectric layer 15; and a p-side electrode 17 formed on the intermediate adhesive layer 16. Further, there is formed a first opening 15a in the dielectric layer 15 for exposing part of the ridge stripe 14a to the external in the form of a stripe, and there is formed a second opening 16a in the intermediate layer 16 wider than the first opening 15a. Moreover, the p-side electrode 17 is electrically connected with the portion of the ridge stripe 14a which is exposed from the first and second openings 15a, 16a to the external.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题:为了实现具有p侧电极从不剥离并且几乎不增加的接触电阻的脊条的长寿命氮化物半导体激光器件。 解决方案:氮化物半导体激光器件包括:形成在基板11上并具有脊条14a的p型半导体层14; 形成在p型半导体层14上的电介质层15; 形成在电介质层15上的中间粘合剂层16; 以及形成在中间粘合剂层16上的p侧电极17.此外,在电介质层15中形成有用于将脊条14a的一部分以条纹的形式暴露于外部的第一开口15a,并且存在 在中间层16中形成比第一开口15a宽的第二开口16a。 此外,p侧电极17与从第一和第二开口15a,16a暴露于外部的脊条14a的部分电连接。 版权所有(C)2008,JPO&INPIT