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    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08072030B2
    • 2011-12-06
    • US12404545
    • 2009-03-16
    • Masayuki Sugiura
    • Masayuki Sugiura
    • H01L23/62
    • H01L29/78612H01L27/0248H01L29/42384
    • A semiconductor device, which is connected to a protected device and protects a protected device, includes a semiconductor layer provided on an insulating film; a plurality of source layers which is formed in the semiconductor layer and extends in a first direction; a plurality of drain layers which is formed in the semiconductor layer and extends along with the source layers; a plurality of body regions which is provided between the source layers and the drain layers in the semiconductor layer and extends in the first direction; and at least one body connecting part connecting the plurality of body regions, wherein a first width between the source layer and the drain layer at a first position is larger than a second width between the source layer and the drain layer at a second position, the second position is closer to the body connecting part than the first position.
    • 连接到受保护器件并保护受保护器件的半导体器件包括设置在绝缘膜上的半导体层; 多个源极层,形成在半导体层中并沿第一方向延伸; 多个漏极层,其形成在所述半导体层中并与所述源极层一起延伸; 多个体区,设置在半导体层中的源极层和漏极层之间并沿第一方向延伸; 以及连接多个体区的至少一个体连接部,其中在第一位置处的源层和漏层之间的第一宽度大于第二位置处的源极层和漏极层之间的第二宽度, 第二位置比第一位置更靠近主体连接部。
    • 9. 发明授权
    • Power amplifier
    • 功率放大器
    • US07595696B2
    • 2009-09-29
    • US11615171
    • 2006-12-22
    • Masayuki SugiuraYasuhiko Kuriyama
    • Masayuki SugiuraYasuhiko Kuriyama
    • H03F1/52
    • H03F1/52H01L27/0251H03F2200/444
    • A power amplifier including an active device having at least one heterjunction bipolar transistor based on a compound semiconductor; a diode connected between the base and the emitter of the bipolar transistor in reverse direction with respect to the base-emitter diode; a resistor connected in series between one electrode of the diode and the base of the bipolar transistor; and a bias circuit connected between the diode and the resistor, wherein the bipolar transistor includes a plurality of transistors, and each transistor is connected to the bias circuit via a resistor connected to a base of the transistor. The bias circuit may include an emitter follower circuit having a bipolar transistor.
    • 一种功率放大器,包括具有至少一个基于化合物半导体的异质结双极晶体管的有源器件; 连接在双极晶体管的基极和发射极之间相对于基极 - 发射极二极管相反的二极管的二极管; 串联连接在二极管的一个电极和双极晶体管的基极之间的电阻器; 以及连接在二极管和电阻器之间的偏置电路,其中所述双极晶体管包括多个晶体管,并且每个晶体管经由连接到所述晶体管的基极的电阻器连接到所述偏置电路。 偏置电路可以包括具有双极晶体管的射极跟随器电路。