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1. 发明申请

US20120038411A1 HIGH-FREQUENCY SWITCH 有权
标题翻译：高频开关
公开(公告)号：US20120038411A1
公开(公告)日：2012-02-16
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

2. 发明授权

US6061026A Monolithic antenna 失效
标题翻译：单片天线
公开(公告)号：US6061026A
公开(公告)日：2000-05-09
申请号：US21172
申请日：1998-02-10
申请人： Masanori Ochi , Souichi Imamura , Shigehiro Hosoi , Yutaka Ueno
发明人： Masanori Ochi , Souichi Imamura , Shigehiro Hosoi , Yutaka Ueno
IPC分类号： H01P11/00 , H01Q9/16 , H01Q9/28 , H01Q13/02 , H01Q13/08 , H01Q21/00 , H01Q21/06 , H01Q23/00 , H01Q1/38
CPC分类号： H01Q23/00 , H01Q21/0093 , H01Q21/064 , H01Q9/285
摘要： A high-gain monolithic antenna with high freedom of design has a signal circuit and a stripline dipole antenna which are provided on a substrate. A dielectric film and a conductor cover covering the dielectric film are provided on the upper surface of the substrate, in addition to a hole extending vertically downward to the underside of the substrate, a conductor wall being provided on the surface thereof. Furthermore, a metallic film is evaporated so as to contact both a metallic cover and a conductor wall. A first grounding conductor and a dielectric are provided on the lower surface of the substrate, and a second grounding conductor is provided on the upper surface of the substrate. A horn, which is tapered into the dielectric and the first grounding conductor thereby forming the shape of a quadrangular pyramid, is provided so as to overlap a hole etched into the substrate. Microwaves or milliwaves are radiated to/from the horn to/from the underside of the substrate.
摘要翻译：具有高自由度的高增益单片天线具有设置在基板上的信号电路和带状线偶极子天线。除了垂直向下延伸到基板的下侧的孔之外，还在基板的上表面上设置覆盖电介质膜的绝缘膜和导体盖，在其表面上设置有导体壁。此外，金属膜被蒸发以与金属盖和导体壁接触。第一接地导体和电介质设置在基板的下表面上，第二接地导体设置在基板的上表面上。提供了锥形到电介质中的喇叭和第一接地导体，从而形成四角锥形的形状，以便与蚀刻到衬底中的孔重叠。微波或毫瓦辐射到/从喇叭到基底的下面。

3. 发明授权

US08698574B2 High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：US08698574B2
公开(公告)日：2014-04-15
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

4. 发明授权

US06936870B2 Heterojunction type compound semiconductor field effect transistor and its manufacturing method 失效
标题翻译：异质结型化合物半导体场效应晶体管及其制造方法
公开(公告)号：US06936870B2
公开(公告)日：2005-08-30
申请号：US10730098
申请日：2003-12-09
申请人： Kazuya Nishihori , Masanori Ochi , Takao Noda , Yoshitomo Sagae , Kenji Hommyo
发明人： Kazuya Nishihori , Masanori Ochi , Takao Noda , Yoshitomo Sagae , Kenji Hommyo
IPC分类号： H01L29/812 , H01L21/335 , H01L21/338 , H01L29/08 , H01L29/744 , H01L29/778 , H01L31/0328
CPC分类号： H01L29/66462 , H01L29/0891 , H01L29/7783
摘要： A heterojunction type compound semiconductor field effect transistor includes a channel layer, a first electron supply layer, an electric field strength reducing layer, a first contact layer, a recess stopper layer, and a second contact layer sequentially stacked on a compound semiconductor substrate. This transistor has a double recess structure. The first contact layer is composed of GaAs or InGaAs doped with n type impurities with a high electron mobility. The electric field strength reducing layer is composed of intrinsic InGaP.
摘要翻译：异质结型化合物半导体场效应晶体管包括依次层叠在化合物半导体基板上的沟道层，第一电子供给层，电场强度降低层，第一接触层，凹部停止层和第二接触层。该晶体管具有双凹槽结构。第一接触层由掺杂有高电子迁移率的n型杂质的GaAs或InGaAs组成。电场强度降低层由本征InGaP组成。

5. 发明授权

US5717232A Semiconductor device sealed with molded resin 失效
标题翻译：用模制树脂密封的半导体器件
公开(公告)号：US5717232A
公开(公告)日：1998-02-10
申请号：US632836
申请日：1996-04-16
申请人： Kazuhiko Inoue , Souichi Imamura , Masanori Ochi , Shigehiro Hosoi , Toru Suga , Takashi Kimura
发明人： Kazuhiko Inoue , Souichi Imamura , Masanori Ochi , Shigehiro Hosoi , Toru Suga , Takashi Kimura
IPC分类号： H01L21/338 , H01L23/29 , H01L23/31 , H01L23/66 , H01L29/812 , H01L29/80 , H01L23/58
CPC分类号： H01L23/66 , H01L23/293 , H01L23/3171 , H01L24/05 , H01L24/06 , H01L2223/6644 , H01L2224/04042 , H01L2224/05556 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48644 , H01L2224/48666 , H01L2224/48669 , H01L2224/49175 , H01L2224/85444 , H01L2224/85466 , H01L2224/85469 , H01L2224/8592 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13064 , H01L2924/16152 , H01L2924/181
摘要： A semiconductor device has an active layer formed on a semiconductor substrate with different types of junctions, a source region, a drain region, a T-shaped gate electrode in which the cross-sectional area of the upper surface is larger than that of the lower surface, a first dielectric layer covering at least the exposed surface of the active layer, and the gate electrode, and a second dielectric layer enclosing the first dielectric layer. In the device, when the specific inductive capacities of the first and second dielectric layers are .epsilon.(1) and .epsilon.(2) respectively .epsilon.(1)
摘要翻译：半导体器件具有形成在具有不同类型结的半导体衬底上的有源层，源极区，漏极区，T形栅电极，其中上表面的截面积大于下表面的横截面面积表面，至少覆盖有源层的暴露表面的第一电介质层和栅电极，以及包围第一介电层的第二电介质层。在该器件中，当第一和第二电介质层的比感应电容分别为ε（1）和ε（2）分别为ε（1）<ε（2）时，第一介电层的吸水率大于第二电介质层的吸水率。

6. 发明授权

US5409849A Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes 失效
标题翻译：具有栅电极与源电极和漏电极自对准的化合物半导体器件的制造方法
公开(公告)号：US5409849A
公开(公告)日：1995-04-25
申请号：US58684
申请日：1993-05-07
申请人： Yoshihiro Kishita , Masanori Ochi , Souichi Imamura , Toshikazu Fukuda
发明人： Yoshihiro Kishita , Masanori Ochi , Souichi Imamura , Toshikazu Fukuda
IPC分类号： H01L29/812 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/417 , H01L29/423 , H01L29/778 , H01L21/265
CPC分类号： H01L29/66863 , H01L21/28587 , H01L29/42316 , H01L29/66462
摘要： According to this invention, there is provided a method of manufacturing a compound semiconductor which can be formed at a high yield and in which variations in characteristics of elements caused by variations in distances between a source and a gate and between a drain and the gate can be minimized. In addition, there is provided a compound semiconductor device having a structure capable of increasing a power gain and obtaining a high-speed operation. According to this invention, an active layer is formed on a compound semi-conductor substrate, and source/drain electrodes are formed on the active layer to be separated from each other. The wall insulating films are respectively formed on side walls of the electrodes, and a gate electrode is formed between the side wall insulating films to be respectively in contact therewith.
摘要翻译：根据本发明，提供一种制造化合物半导体的方法，该化合物半导体可以以高产率形成，并且由源极和栅极之间以及漏极和栅极之间的距离变化引起的元件的特性的变化可以最小化此外，提供了具有能够增加功率增益并获得高速操作的结构的化合物半导体器件。根据本发明，在复合半导体基板上形成有源层，在有源层上形成源极/漏极，以分离。壁绝缘膜分别形成在电极的侧壁上，并且在侧壁绝缘膜之间形成分别与其接触的栅电极。

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