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1. 发明申请

US20110241017A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20110241017A1
公开(公告)日：2011-10-06
申请号：US13076980
申请日：2011-03-31
申请人： Nariaki IKEDA , Takuya KOKAWA , Masayuki IWAMI , Sadahiro KATO
发明人： Nariaki IKEDA , Takuya KOKAWA , Masayuki IWAMI , Sadahiro KATO
IPC分类号： H01L29/778
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/4232 , H01L29/518 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes: a buffer layer that is formed on a substrate; a high resistance layer or a foundation layer that is formed on the buffer layer; a carbon-containing carrier concentration controlling layer that is formed on the high resistance layer or the foundation layer; a carrier traveling layer that is formed on the carrier concentration controlling layer; a carrier supplying layer that is formed on the carrier traveling layer; a recess that is formed from the carrier supplying layer up to a predetermined depth; source/drain electrodes that are formed on the carrier supplying layer with the recess intervening therebetween; a gate insulating film that is formed on the carrier supplying layer so as to cover the recess; and a gate electrode that is formed on the gate insulating film in the recess
摘要翻译：场效应晶体管包括：形成在衬底上的缓冲层; 形成在缓冲层上的高电阻层或基底层; 形成在高电阻层或基底层上的含碳载体浓度控制层; 载体行进层，其形成在所述载流子浓度控制层上; 形成在载体行进层上的载体供给层; 由所述载体供给层形成达预定深度的凹部; 源极/漏电极，其形成在载体供给层上，其间具有凹槽; 栅极绝缘膜，形成在所述载体供给层上以覆盖所述凹部; 以及形成在凹部中的栅极绝缘膜上的栅电极

2. 发明申请

US20110241088A1 FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR, AND METHOD OF FORMING GROOVE 有权
标题翻译：场效应晶体管，制造场效应晶体管的方法及其形成方法
公开(公告)号：US20110241088A1
公开(公告)日：2011-10-06
申请号：US13075843
申请日：2011-03-30
申请人： Yoshihiro SATO , Takehiko NOMURA , Nariaki IKEDA , Takuya KOKAWA , Masayuki IWAMI , Sadahiro KATO
发明人： Yoshihiro SATO , Takehiko NOMURA , Nariaki IKEDA , Takuya KOKAWA , Masayuki IWAMI , Sadahiro KATO
IPC分类号： H01L29/78 , H01L21/336 , H01L21/306 , B82Y99/00 , B82Y40/00
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/4232 , H01L29/518 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer and includes a channel layer that has the carbon concentration of not more than 1×1018 cm−3 and has the layer thickness of more than 10 nm and not more than 100 nm, a recess that is formed up to the inside of the channel layer in the semiconductor operation layer, source and drain electrodes that are formed on the semiconductor operation layer with the recess intervening therebetween, a gate insulating film that is formed on the semiconductor operation layer so as to cover the recess, and a gate electrode that is formed on the gate insulating film in the recess.
摘要翻译：场效应晶体管包括在基板上的高电阻层，形成在高电阻层上并具有碳浓度不大于1×10 18 cm -3且具有层厚度的沟道层的半导体操作层大于10nm且不大于100nm的凹槽，形成在半导体操作层中的沟道层内部的凹部，形成在半导体操作层上的沟槽间的沟槽间的沟槽间的沟槽，栅极绝缘膜，其形成在半导体操作层上以覆盖凹部;以及栅电极，其形成在凹部中的栅极绝缘膜上。

3. 发明申请

US20130069076A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20130069076A1
公开(公告)日：2013-03-21
申请号：US13617156
申请日：2012-09-14
申请人： Masayuki IWAMI , Takuya KOKAWA
发明人： Masayuki IWAMI , Takuya KOKAWA
IPC分类号： H01L29/205 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/155 , H01L29/2003
摘要： Provided is a nitride semiconductor device comprising a base substrate; a buffer layer formed above the base substrate; an active layer formed on the buffer layer; and at least two electrodes formed above the active layer. The buffer layer includes one or more composite layers that each have a plurality of nitride semiconductor layers with different lattice constants, and at least one of the one or more composite layers is doped with carbon atoms and oxygen atoms in at least a portion of a carrier region of the nitride semiconductor having the largest lattice constant among the plurality of nitride semiconductor layers, the carrier region being a region in which carriers are generated due to the difference in lattice constants between this nitride semiconductor layer and the nitride semiconductor layer formed directly thereon.
摘要翻译：提供了一种氮化物半导体器件，其包括基底基板; 形成在所述基底基板上的缓冲层; 形成在缓冲层上的有源层; 以及形成在有源层上方的至少两个电极。缓冲层包括一个或多个复合层，每个复合层各自具有不同晶格常数的多个氮化物半导体层，并且该一个或多个复合层中的至少一个在载体的至少一部分中掺杂有碳原子和氧原子在多个氮化物半导体层中具有最大晶格常数的氮化物半导体的区域，由于该氮化物半导体层和直接形成的氮化物半导体层之间的晶格常数的差异，载流子区域是其中产生载流子的区域。

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