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    • 2. 发明申请
    • SOLID-STATE IMAGING DEVICE AND DRIVING METHOD OF THE SAME
    • 固态成像装置及其驱动方法
    • US20090167915A1
    • 2009-07-02
    • US12335647
    • 2008-12-16
    • Masayuki HirotaMasashi Murakami
    • Masayuki HirotaMasashi Murakami
    • H04N3/14
    • H04N5/378H04N5/357
    • Provided is a solid-state imaging device being capable of suppressing RTS noise and preventing decrease in S/N when a signal having a smaller value is converted to a digital signal. The solid-state imaging device includes: an imaging unit including pixels arranged in rows and columns; column amplifying units each amplifying a column signal with a variable gain, each of the column amplifying units being provided for each column of the imaging unit; column sample-hold units each selectively sample-holding and passing the column signal, the column signal being amplified by a corresponding one of the column amplifying units; and column AD conversion units each converting, using a ramp signal, the column signal representing a signal component and a reference component to a digital signal corresponding to a difference between the signal component and the reference component, the column signal being read from a corresponding one of said column sample-hold units.
    • 提供一种能够抑制RTS噪声并且当具有较小值的信号被转换为数字信号时防止S / N减小的固态成像装置。 固态成像装置包括:成像单元,包括以行和列排列的像素; 列放大单元,其每个放大具有可变增益的列信号,每个列放大单元被提供给成像单元的每列; 每个列采样保持单元选择性地采样保持并传递列信号,列信号由对应的列放大单元放大; 和列AD转换单元,每个单元使用斜坡信号将表示信号分量和参考分量的列信号转换成对应于信号分量和参考分量之间的差的数字信号,从相应的一个 的所述柱采样保持单元。
    • 5. 发明申请
    • Solid state imaging device and imaging device
    • 固态成像装置和成像装置
    • US20080030595A1
    • 2008-02-07
    • US11783643
    • 2007-04-11
    • Masashi MurakamiMasayuki HirotaKenji Watanabe
    • Masashi MurakamiMasayuki HirotaKenji Watanabe
    • H04N5/228
    • H04N5/335H04N5/3575H04N5/374H04N5/378
    • A solid state imaging device includes a plurality of pixels arranged in a matrix, a plurality of vertical signal lines VL arranged to correspond to columns of the pixels, respectively, such that each of them is connected to the pixels in each column and a column amplifier including a plurality of amplifiers AP. Each of the amplifiers AP includes a current source MOS transistor T1, an amplifying MOS transistor T2 for amplifying an image signal and a cascode MOS transistor T3 which is cascode-connected to the amplifying MOS transistor and outputs an amplified image signal between the cascode MOS transistor T3 and the current source MOS transistor T1. Gate terminals of the cascode MOS transistors T3 of the amplifiers AP are connected to each other.
    • 固态成像装置包括以矩阵形式排列的多个像素,多个垂直信号线VL分别布置成对应于像素列,使得它们中的每一个连接到每列中的像素,列放大器 包括多个放大器AP。 放大器AP中的每一个包括电流源MOS晶体管T1,用于放大图像信号的放大MOS晶体管T 2和与放大MOS晶体管串联连接的共源共栅MOS晶体管T 3,并输出放大图像信号 共源共栅MOS晶体管T 3和电流源MOS晶体管T 1.放大器AP的共源共栅MOS晶体管T 3的栅极端子彼此连接。
    • 6. 发明授权
    • Solid state imaging device and imaging device
    • 固态成像装置和成像装置
    • US07652702B2
    • 2010-01-26
    • US11783643
    • 2007-04-11
    • Masashi MurakamiMasayuki HirotaKenji Watanabe
    • Masashi MurakamiMasayuki HirotaKenji Watanabe
    • H04N3/14
    • H04N5/335H04N5/3575H04N5/374H04N5/378
    • A solid state imaging device includes a plurality of pixels arranged in a matrix, a plurality of vertical signal lines VL arranged to correspond to columns of the pixels, respectively, such that each of them is connected to the pixels in each column and a column amplifier including a plurality of amplifiers AP. Each of the amplifiers AP includes a current source MOS transistor T1, an amplifying MOS transistor T2 for amplifying an image signal and a cascode MOS transistor T3 which is cascode-connected to the amplifying MOS transistor and outputs an amplified image signal between the cascode MOS transistor T3 and the current source MOS transistor T1. Gate terminals of the cascode MOS transistors T3 of the amplifiers AP are connected to each other.
    • 固态成像装置包括以矩阵形式排列的多个像素,多个垂直信号线VL分别布置成对应于像素列,使得它们中的每一个连接到每列中的像素,列放大器 包括多个放大器AP。 放大器AP中的每一个包括电流源MOS晶体管T1,用于放大图像信号的放大MOS晶体管T2和与放大MOS晶体管串联连接的共源共栅MOS晶体管T3,并且在共源共栅MOS晶体管之间输出放大图像信号 T3和电流源MOS晶体管T1。 放大器AP的共源共栅MOS晶体管T3的栅极端子彼此连接。