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1. 发明授权

US06786944B2 Aqueous dispersion for chemical mechanical polishing 有权
标题翻译：化学机械抛光用水分散体
公开(公告)号：US06786944B2
公开(公告)日：2004-09-07
申请号：US10412385
申请日：2003-04-14
申请人： Masayuki Hattori , Michiaki Ando , Kazuo Nishimoto , Nobuo Kawahashi
发明人： Masayuki Hattori , Michiaki Ando , Kazuo Nishimoto , Nobuo Kawahashi
IPC分类号： C09G102
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.1 to 30% by mass, respectively, when the total proportion of the aqueous medium, ceria particles, preservative and organic component is 100% by mass, and wherein the pH of this aqueous dispersion can be kept in a neutral range.
摘要翻译：用于化学机械抛光的水性分散体难以腐蚀，几乎不引起划痕，仅导致小的凹陷，并且适合用于半导体器件生产中的微层间电介质的微隔离步骤或平面化步骤，该分散体包括二氧化铈颗粒，由具有在环中含有氮原子和硫原子的杂环结构的化合物组成的防腐剂，例如异噻唑酮化合物，以及有机成分，例如由树脂颗粒组成的分散剂，由包含在水性介质中的具有特定分子量的水溶性聚合物，表面活性剂和/或有机酸或其盐，其中二氧化铈颗粒，防腐剂和有机组分的含量为0.1〜20％质量，0.001〜0.2质量％和0.1〜30质量％，当水性介质，二氧化铈颗粒，防腐剂和有机成分为100质量％，并且其中该水分散体的pH可以保持在中性范围。

2. 发明授权

US06740629B2 Composition for washing a polishing pad and method for washing a polishing pad 有权
标题翻译：用于洗涤抛光垫的组合物和用于洗涤抛光垫的方法
公开(公告)号：US06740629B2
公开(公告)日：2004-05-25
申请号：US10166111
申请日：2002-06-11
申请人： Michiaki Ando , Nobuo Kawahashi , Masayuki Hattori
发明人： Michiaki Ando , Nobuo Kawahashi , Masayuki Hattori
IPC分类号： C11D322
CPC分类号： C11D7/06 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D11/0047
摘要： An object of the present invention is to provide a composition for washing a polishing pad which removes a water-insoluble compound which was separated from a surface to be polished during polishing, formed at least on the surface of a polishing pad, and comprised a metal ion ionized, and a method for washing a polishing pad using the same. The composition for washing a polishing pad of the present invention is obtained by, in the case a water-insoluble compound is a copper quinaldinic acid complex, blending ammonia as a component for rendering the water-insoluble compound water-soluble and glycine as a water-soluble complex forming component for forming a water-soluble complex with a copper ion, and stirring them. In addition, in a method for washing a polishing pad using the composition for washing a polishing pad, a polishing pad can be washed effectively, the productivity can be improved and, further, consumption of a polishing pad can be inhibited.
摘要翻译：本发明的目的是提供一种用于清洗抛光垫的组合物，该组合物至少在抛光垫的表面上形成一抛光垫，该组合物除去在抛光过程中从抛光表面分离的水不溶性化合物，离子电离，以及使用其抛光垫的洗涤方法。用于洗涤本发明的抛光垫的组合物是通过在水不溶性化合物是铜喹喔啉酸络合物的情况下，将氨作为使水不溶性化合物水溶性和甘氨酸作为水的组分混合而获得的用于与铜离子形成水溶性络合物，并搅拌它们。此外，在使用洗涤抛光垫的组合物洗涤抛光垫的方法中，可以有效地洗涤抛光垫，可以提高生产率，并且还可以抑制抛光垫的消耗。

3. 发明授权

US06582761B1 METHOD OF PRODUCTION OF COMPOSITED PARTICLE, COMPOSITED PARTICLE PRODUCED BY THIS METHOD AND AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING CONTAINING THIS COMPOSITED PARTICLE, AND METHOD OF PRODUCTION OF AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING 有权
标题翻译：生产复合颗粒的方法，通过该方法生产的复合颗粒和含有该组合物的化学机械抛光的水性分散体，以及用于生产化学机械抛光的水性分散体的方法
公开(公告)号：US06582761B1
公开(公告)日：2003-06-24
申请号：US09716384
申请日：2000-11-21
申请人： Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
发明人： Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： B05D136
CPC分类号： C08J3/12 , C08J3/215 , C08K2201/013 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1454 , H01L21/31058 , H01L21/3212 , Y10T428/2991 , Y10T428/2995
摘要： The present invention relates to a method for producing a composited particle in which an inorganic particle is not released, a composited particle produced by this method, and an aqueous dispersion for CMP containing this composited particle. The method for producing a composited particle of the present invention comprises forming a preliminary particle by adhering one or more types of inorganic particles on at least a part of the surface area of a polymer particle, then, polycondensing at least one selected from among organosilicon compounds and organometal compounds in the presence of the above-mentioned preliminary particle.
摘要翻译：本发明涉及无机颗粒不释放的复合颗粒的制造方法，通过该方法制造的复合颗粒和含有该复合颗粒的CMP的水性分散体。本发明的复合粒子的制造方法包括：在聚合物粒子的表面积的至少一部分上粘附一种以上的无机粒子，然后将选自有机硅化合物和有机金属化合物在上述初步颗粒存在下进行。

4. 发明授权

US07005382B2 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水分散体，化学机械抛光工艺，半导体器件的生产过程以及用于制备用于化学机械抛光的水分散体的材料
公开(公告)号：US07005382B2
公开(公告)日：2006-02-28
申请号：US10694890
申请日：2003-10-29
申请人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
发明人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024
摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
摘要翻译：提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II）水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。磨粒在至少一种水分散体中含有。

5. 发明授权

US06935928B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US06935928B2
公开(公告)日：2005-08-30
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要翻译：化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

6. 发明申请

US20050164510A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US20050164510A1
公开(公告)日：2005-07-28
申请号：US11038190
申请日：2005-01-21
申请人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
发明人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09G1/02 , C09K3/14 , H01L21/304 , H01L21/306 , H01L21/3105 , H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
摘要翻译：化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。

7. 发明授权

US06527818B2 Aqueous dispersion for chemical mechanical polishing 有权
标题翻译：化学机械抛光用水分散体
公开(公告)号：US06527818B2
公开(公告)日：2003-03-04
申请号：US09778817
申请日：2001-02-08
申请人： Masayuki Hattori , Kiyonobu Kubota , Kazuo Nishimoto , Nobuo Kawahashi
发明人： Masayuki Hattori , Kiyonobu Kubota , Kazuo Nishimoto , Nobuo Kawahashi
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212
摘要： There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.
摘要翻译：提供了用于CMP的水分散体，在化学蚀刻和机械抛光性能之间具有优异的平衡。本发明CMP的水性分散体的特征在于包含研磨剂，水和杂多酸。根据本发明的CMP的另一种水分散体的特征在于包含研磨剂，水，杂多酸和有机酸。另外根据本发明的用于CMP的水分散体的特征在于包含一次粒径为5-100nm的胶体二氧化硅，水和杂多酸。杂多酸优选为选自硅钼酸，磷钨酸，硅钨酸，磷钼酸和硅钨钼酸中的至少一种。有机酸优选为选自草酸，丙二酸，琥珀酸，戊二酸，己二酸，马来酸，富马酸，邻苯二甲酸，苹果酸，酒石酸和柠檬酸中的至少一种。

8. 发明授权

US07550020B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US07550020B2
公开(公告)日：2009-06-23
申请号：US11180619
申请日：2005-07-14
申请人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
发明人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/31053 , C09G1/02
摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
摘要翻译：化学机械研磨用水分散体包含浓度为1.5质量％以下的研磨剂，其中研磨剂包含二氧化铈，平均分散粒径不小于1.0μm。化学机械抛光方法包括通过使用化学机械抛光水分散体抛光绝缘膜。通过使用化学机械研磨水分散体，可以抑制抛光划痕的发生，而不降低去除率。

9. 发明授权

US07252782B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US07252782B2
公开(公告)日：2007-08-07
申请号：US11038190
申请日：2005-01-21
申请人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
发明人： Norihiko Ikeda , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09K13/06
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
摘要翻译：化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。

10. 发明授权

US06924227B2 Slurry for chemical mechanical polishing and method of manufacturing semiconductor device 有权
标题翻译：用于化学机械抛光的浆料和半导体器件的制造方法
公开(公告)号：US06924227B2
公开(公告)日：2005-08-02
申请号：US09932943
申请日：2001-08-21
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
IPC分类号： H01L21/304 , C09G1/02 , C09K3/14 , H01L21/4763
CPC分类号： C09G1/02 , C09K3/1463
摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
摘要翻译：制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。

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