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    • 3. 发明授权
    • Data erasing and re-writing circuit for use in microcomputer integrated
circuit device
    • MICROCOMPUTER集成电路设备中使用的数据擦除和重写电路
    • US5243561A
    • 1993-09-07
    • US749434
    • 1991-08-26
    • Naoki Yamauchi
    • Naoki Yamauchi
    • G06F15/78G11C7/10G11C16/10
    • G11C7/1075
    • Data in an EEPROM contained in a microcomputer integrated circuit device is erased and re-writing. Upon a detection of a start bit of the data, data of a plurality of bits is accepted in a shift register in response to a clock signal applied from a synchronization circuit. A counter counts clock signals up to the number corresponding to the data of a plurality of bits to inhibit data writing in the shift register. The data accepted in the shift register is temporarily stored as bit parallel data of a plurality of bits in a receiving buffer and selected by a selector to be applied to the EEPROM. The data is written, by a write control circuit, at an address in the EEPROM designated by an address counter.
    • 包含在微计算机集成电路装置中的EEPROM中的数据被擦除和重写。 在检测到数据的起始位时,响应于从同步电路施加的时钟信号,在移位寄存器中接受多个位的数据。 计数器将时钟信号计数直到与多个位的数据相对应的数字,以禁止移位寄存器中的数据写入。 在移位寄存器中接受的数据被暂时存储在接收缓冲器中的多个位的位并行数据,并由选择器选择以被应用于EEPROM。 数据由写控制电路写入由地址计数器指定的EEPROM中的地址。
    • 6. 发明授权
    • Semiconductor integrated circuit with selective read and write inhibiting
    • 具有选择性读写抑制的半导体集成电路
    • US5097445A
    • 1992-03-17
    • US450809
    • 1989-12-14
    • Naoki Yamauchi
    • Naoki Yamauchi
    • G11C17/00G06F12/14G06F15/78G11C8/20G11C16/02G11C16/10H01L21/8247H01L29/788H01L29/792
    • G11C16/10G06F12/1425G11C8/20
    • A semiconductor integrated circuit with a non-volatile memory capable of electric rewriting of data is disclosed. The circuit is provided with inhibiting means for comparing an address of a write inhibition area of the non-volatile memory and an address from an external or internal CPU and inhibiting the writing of data in the area when the two compared addresses coincide, and also comparing an address of a read inhibition area of the non-volatile memory and an address from an external reader/writer and inhibiting the reading of data from the area when the two compared addresses coincide. It is thus possible to prevent erroneous rewriting of a program or protection-required data due to runaway of CPU and also prevent reading of secret data by a third party. Thus, a microcomputer can be realized, in which a program memory and a data memory both consist of non-volatile memories capable of rewriting of data, and which is very easy to use and has improved reliability and confidential property.
    • 公开了具有能够重写数据的非易失性存储器的半导体集成电路。 该电路设置有禁止装置,用于比较非易失性存储器的写入禁止区域的地址和来自外部或内部CPU的地址,并且当两个比较的地址重合时禁止写入该区域中的数据,并且还比较 非易失性存储器的读取禁止区域的地址和来自外部读取器/写入器的地址,并且当两个比较的地址重合时禁止从区域读取数据。 因此,可以防止程序的错误重写或由于CPU的失控导致的保护要求的数据,并且还防止第三方读取秘密数据。 因此,可以实现微型计算机,其中程序存储器和数据存储器都由能够重写数据的非易失性存储器组成,并且其易于使用并具有改进的可靠性和保密性。