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1. 发明授权

US06999596B2 Capacitor sensor 有权
标题翻译：电容传感器
公开(公告)号：US06999596B2
公开(公告)日：2006-02-14
申请号：US10509221
申请日：2003-04-04
申请人： Masayoshi Hiramoto , Kazumoto Doi , Yoshinobu Yasuno , Tatsuhiro Sawada
发明人： Masayoshi Hiramoto , Kazumoto Doi , Yoshinobu Yasuno , Tatsuhiro Sawada
IPC分类号： H04R25/00
CPC分类号： H04R19/04 , H01G7/02 , H04R1/086 , H04R19/016 , H04R31/006
摘要： A condenser sensor (10) comprises an electrically conductive case (20) having an opening portion (22a) formed therein and an opposing portion (22b) opposing to and spaced apart from the opening portion (22a); a fixed electrode (30) received in the electrically conductive case (20) through the opening portion (22a); an electrically conductive diaphragm (51) accommodated in the electrically conductive case (20), the electrically conductive diaphragm (51) spaced apart from the fixed electrode (30) and opposing to the opening portion (22a); an electrically conductive diaphragm supporting member (52) disposed in the electrically conductive case (20) to support the diaphragm (51); a circuit packaging board (60) disposed in the electrically conductive case (20) to be held in electrical contact with the fixed electrode (30) and the diaphragm (51) respectively through the electrically conductive case (20) and the diaphragm supporting member (52); and deformation protecting member (32) for protecting the opposing portion (22b) from being deformed, in which the deformation protecting member (32) intervenes between the electrically conductive case (20) and the diaphragm (51), the deformation protecting member (32) is disposed inwardly of the circumference (51b) of an oscillatable portion (51a) of the diaphragm (51).
摘要翻译：冷凝器传感器（10）包括导电壳体（20），其具有形成在其中的开口部分（22a）和与开口部分相对并间隔开的相对部分（22b）; 固定电极（30），其通过所述开口部分接收在所述导电壳体（20）中; 导电隔膜（51），其容纳在所述导电壳体（20）中，所述导电隔膜（51）与所述固定电极（30）间隔开并与所述开口部分相对; 设置在所述导电壳体（20）中以支撑所述隔膜（51）的导电隔膜支撑构件（52）; 设置在导电性壳体（20）中的电路封装基板（60）分别通过导电性壳体（20）和隔膜支撑部件（...）保持与固定电极（30）和隔膜（51）电接触 52）; 以及用于保护相对部分（22b）不变形的变形保护构件（32），其中变形保护构件（32）介于导电壳体（20）和隔膜（51）之间，变形保护构件 32）设置在隔膜（51）的可振动部分（51a）的圆周（51b）的内侧。

2. 发明申请

US20050163336A1 Capacitor sensor 有权
标题翻译：电容传感器
公开(公告)号：US20050163336A1
公开(公告)日：2005-07-28
申请号：US10509221
申请日：2003-04-04
申请人： Masayoshi Hiramoto , Kazumoto Doi , Yoshinobu Yasuno , Tatsuhiro Sawada
发明人： Masayoshi Hiramoto , Kazumoto Doi , Yoshinobu Yasuno , Tatsuhiro Sawada
IPC分类号： H04R19/00 , H04R9/08 , H04R11/04
CPC分类号： H04R19/04 , H01G7/02 , H04R1/086 , H04R19/016 , H04R31/006
摘要： A condenser sensor (10) comprises an electrically conductive case (20) having an opening portion (22a) formed therein and an opposing portion (22b) opposing to and spaced apart from the opening portion (22a); a fixed electrode (30) received in the electrically conductive case (20) through the opening portion (22a); an electrically conductive diaphragm (51) accommodated in the electrically conductive case (20), the electrically conductive diaphragm (51) spaced apart from the fixed electrode (30) and opposing to the opening portion (22a); an electrically conductive diaphragm supporting member (52) disposed in the electrically conductive case (20) to support the diaphragm (51); a circuit packaging board (60) disposed in the electrically conductive case (20) to be held in electrical contact with the fixed electrode (30) and the diaphragm (51) respectively through the electrically conductive case (20) and the diaphragm supporting member (52); and deformation protecting member (32) for protecting the opposing portion (22b) from being deformed, in which the deformation protecting member (32) intervenes between the electrically conductive case (20) and the diaphragm (51), the deformation protecting member (32) is disposed inwardly of the circumference (51b) of an oscillatable portion (51a) of the diaphragm (51).
摘要翻译：冷凝器传感器（10）包括导电壳体（20），其具有形成在其中的开口部分（22a）和与开口部分相对并间隔开的相对部分（22b）; 固定电极（30），其通过所述开口部分接收在所述导电壳体（20）中; 导电隔膜（51），其容纳在所述导电壳体（20）中，所述导电隔膜（51）与所述固定电极（30）间隔开并与所述开口部分相对; 设置在所述导电壳体（20）中以支撑所述隔膜（51）的导电隔膜支撑构件（52）; 设置在导电性壳体（20）中的电路封装基板（60）分别通过导电性壳体（20）和隔膜支撑部件（...）保持与固定电极（30）和隔膜（51）电接触 52）; 以及用于保护相对部分（22b）不变形的变形保护构件（32），其中变形保护构件（32）介于导电壳体（20）和隔膜（51）之间，变形保护构件 32）设置在隔膜（51）的可振动部分（51a）的圆周（51b）的内侧。

3. 发明授权

US07794873B2 Battery including strip-shaped electrode group folded in a zigzag pattern 有权
标题翻译：电池包括以锯齿形折叠的带状电极组
公开(公告)号：US07794873B2
公开(公告)日：2010-09-14
申请号：US11910603
申请日：2006-04-21
申请人： Shinji Mino , Sadayuki Okazaki , Masaya Ugaji , Masayoshi Hiramoto
发明人： Shinji Mino , Sadayuki Okazaki , Masaya Ugaji , Masayoshi Hiramoto
IPC分类号： H01M2/26 , H01M2/02
CPC分类号： H01M10/0583 , H01M2/263 , H01M2/30 , H01M4/70
摘要： A battery of the present invention has a strip-shaped electrode group. The electrode group includes a first electrode, a second electrode, and a separator interposed therebetween. The first electrode has a strip-shaped first current collector and a first active material layer carried on one surface thereof. The first active material layer faces the separator. The second electrode has a strip-shaped second current collector and a second active material layer carried on one surface thereof. The second active material layer faces the separator. The electrode group is folded in a zigzag pattern to form a laminate having a plurality of flat portions, at least one first bent portion located on a first end side of the plurality of flat portions in which the first current collector is located on the outermost side, and at least one second bent portion located on a second end side that is opposite to the first end side in which the second current collector is located on the outermost side. The laminate has a first terminal connected to the at least one first bent portion and a second terminal connected to the at least one second bent portion.
摘要翻译：本发明的电池具有带状电极组。电极组包括第一电极，第二电极和插入其间的隔膜。第一电极具有带状的第一集电体和在其一个表面上承载的第一活性物质层。第一活性物质层面向分离器。第二电极具有带状的第二集电体和在其一个表面上承载的第二活性物质层。第二活性物质层面向分离器。电极组以锯齿形折叠形成具有多个平坦部分的层叠体，至少一个位于多个平坦部分的第一端侧的第一弯曲部分，其中第一集电体位于最外侧以及位于与第二集电体位于最外侧的第一端侧相反的第二端侧的至少一个第二弯曲部。层压体具有连接到至少一个第一弯曲部分的第一端子和连接到至少一个第二弯曲部分的第二端子。

4. 发明申请

US20090029259A1 BATTERY 有权
标题翻译：电池
公开(公告)号：US20090029259A1
公开(公告)日：2009-01-29
申请号：US11913349
申请日：2006-05-01
申请人： Sadayuki Okazaki , Shinji Mino , Masaya Ugaji , Masayoshi Hiramoto
发明人： Sadayuki Okazaki , Shinji Mino , Masaya Ugaji , Masayoshi Hiramoto
IPC分类号： H01M2/16
CPC分类号： H01M10/0583 , H01M2/22 , H01M2/26 , H01M2/30 , H01M4/661 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0525
摘要： A battery of this invention includes: a separator which is folded in a zigzag manner, thereby forming a layered structure having at least one first-electrode holding part and at least one second-electrode holding part which are alternately aligned; a first electrode accommodated in the first-electrode holding part; and a second electrode accommodated in the second-electrode holding part. At least one of the first electrode and the second electrode has at least one protruding part. The first electrode is connected to a first terminal, and the second electrode is connected to second terminal.
摘要翻译：本发明的电池包括：以锯齿形的方式折叠的隔膜，从而形成具有至少一个第一电极保持部和至少一个第二电极保持部交替排列的层状结构; 容纳在所述第一电极保持部中的第一电极; 以及容纳在所述第二电极保持部中的第二电极。第一电极和第二电极中的至少一个具有至少一个突出部分。第一电极连接到第一端子，第二电极连接到第二端子。

5. 发明授权

US07163755B2 Magneto-resistive element 失效
标题翻译：磁阻元件
公开(公告)号：US07163755B2
公开(公告)日：2007-01-16
申请号：US10848742
申请日：2004-05-17
申请人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F10/3272 , H01F41/302 , H01L27/228 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.
摘要翻译：本发明提供一种垂直电流型磁阻元件。该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层，磁性层。由电流垂直于膜流过的中间层的区域限定的元件面积不大于1000μm2。

6. 发明申请

US20050174700A1 Magnetic head and apparatus for recording/reproducing magnetic information using the same 失效
标题翻译：用于使用其磁记录/再现磁信息的磁头和装置
公开(公告)号：US20050174700A1
公开(公告)日：2005-08-11
申请号：US10896795
申请日：2004-07-22
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/012 , G11B5/11 , G11B5/39 , G11B5/40 , G11B5/147 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

7. 发明授权

US06917492B2 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same 失效
标题翻译：磁阻元件及制造相同的非易失性存储器的方法
公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译：磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素，磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0

8. 发明授权

US06639765B2 Magnetoresistive element and magnetoresistive device using the same 有权
公开(公告)号：US06639765B2
公开(公告)日：2003-10-28
申请号：US09963895
申请日：2001-09-25
申请人： Hideaki Adachi , Masayoshi Hiramoto , Kenji Iijima , Hiroshi Sakakima
发明人： Hideaki Adachi , Masayoshi Hiramoto , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , H01F10/324
摘要： A magnetoresistive element with an improved magnetoresistive effect achieved by interposing a titanium nitride layer between a substrate and a spinel-type magnetic substance is provided. The magnetoresistive element comprises a substrate and a multilayer film formed on the substrate, and the multilayer film includes a first magnetic layer, a nonmagnetic layer formed on the first magnetic layer and a second magnetic layer formed on this nonmagnetic layer. An electric current is supplied in a direction perpendicular to a film surface of the multilayer film, and a change in electrical resistance is detected by the electric current based on a change in a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer. The first magnetic layer has a spinel crystal structure, and the multilayer film further includes a titanium nitride layer interposed between the substrate and the first magnetic layer.

9. 发明授权

US06588092B2 Method for producing a magnetic head, the magnetic head including a pair of magnetic core halves 失效
标题翻译：用于制造磁头的方法，该磁头包括一对磁芯半部
公开(公告)号：US06588092B2
公开(公告)日：2003-07-08
申请号：US10032733
申请日：2001-12-28
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
IPC分类号： G11B5127
CPC分类号： G11B5/1276 , G11B5/0086 , G11B5/1878 , G11B5/40 , G11B31/006 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49055
摘要： Method for producing a magnetic head of a pair of magnetic core halves combined with a nonmagnetic layer therebetween including forming a winding window in at least one of a pair of generally flat oxide magnetic plates, forming at least one underlying layer on each oxide magnetic plate, forming a metal magnetic thin film on the underlying layer containing magnetic crystalline particles having average volume Va and average surface area Sa fulfilling the relationship Sa>about 4.64 Va¾, forming a groove in a body including the oxide magnetic plate, underlying layer and metal magnetic thin film, and combining the body with another body including an oxide magnetic plate and a metal magnetic thin film with a nonmagnetic layer therebetween, where the metal magnetic thin film is formed in such a manner to prevent the oxide magnetic plates from cracking due to internal stress generated in the metal magnetic thin film.
摘要翻译：一种用于制造与其间的非磁性层组合的一对磁芯半部的磁头的方法，包括在一对大致平坦的氧化物磁性板中的至少一个中形成绕组窗口，在每个氧化物磁性板上形成至少一个下层，在含有平均体积Va的磁性结晶颗粒和满足Sa>约4.64VaV的平均表面积Sa的基底层上形成金属磁性薄膜，在包括氧化物磁性板，下层和金属磁性薄片的主体中形成凹槽并且将本体与包括氧化物磁性板和在其间具有非磁性层的金属磁性薄膜的另一物体组合，其中形成金属磁性薄膜以防止氧化物磁性板由于内部应力而破裂在金属磁性薄膜中产生。

10. 发明授权

US06436526B1 Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell 有权
标题翻译：磁阻效应元件，磁阻效应存储单元，MRAM以及用于执行从磁阻效应存储单元写入或读取的信息的方法
公开(公告)号：US06436526B1
公开(公告)日：2002-08-20
申请号：US09596116
申请日：2000-06-16
申请人： Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
发明人： Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
摘要翻译：磁阻效应元件包括第一铁磁膜; 第二铁磁膜; 以及介于所述第一铁磁膜和所述第二铁磁性膜之间的第一非磁性膜。第一铁磁膜的磁化比通过外部磁场的第二铁磁性膜的磁化更容易旋转。第一铁磁膜具有约2nm或更小的有效磁性厚度。

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