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1. 发明授权

US06767655B2 Magneto-resistive element 失效
标题翻译：磁阻元件
公开(公告)号：US06767655B2
公开(公告)日：2004-07-27
申请号：US09931113
申请日：2001-08-16
申请人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B531
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F10/3272 , H01F41/302 , H01L27/228 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 &mgr;m2.
摘要翻译：本发明提供一种垂直电流型磁阻元件。该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层，磁性层。由电流垂直于膜流过的中间层的面积所限定的元件面积不大于1000μm2。

2. 发明授权

US07163755B2 Magneto-resistive element 失效
标题翻译：磁阻元件
公开(公告)号：US07163755B2
公开(公告)日：2007-01-16
申请号：US10848742
申请日：2004-05-17
申请人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F10/3272 , H01F41/302 , H01L27/228 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.
摘要翻译：本发明提供一种垂直电流型磁阻元件。该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层，磁性层。由电流垂直于膜流过的中间层的区域限定的元件面积不大于1000μm2。

3. 发明授权

US06771473B2 Magnetoresistive element and method for producing the same 失效
公开(公告)号：US06771473B2
公开(公告)日：2004-08-03
申请号：US10052725
申请日：2002-01-18
申请人： Masayoshi Hiramoto , Akihiro Odagawa , Nozomu Matukawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Akihiro Odagawa , Nozomu Matukawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： H01L43/12 , H01L43/10 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： The present invention provides a magnetoresistive element that includes a pair of magnetic layers and an intermediate layer between the magnetic layers. The intermediate layer contains at least three elements selected from Groups 2 to 17, and the elements include at least one selected from the group consisting of F, O, N, C and B. According to the invention, a magnetoresistive element with high magnetoresistance change ratio and low resistance can be provided. The invention also provides a method for producing a magnetoresistive element. The method includes forming a precursor and forming at least one part of the intermediate layer from the precursor. The precursor is reacted with at least one reactive species selected from the group consisting of oxygen atoms, nitrogen atoms and carbon atoms in a reactive atmosphere containing the reactive species.

4. 发明授权

US07042686B2 Magnetoresistive element and method for producing the same 失效
公开(公告)号：US07042686B2
公开(公告)日：2006-05-09
申请号：US10871165
申请日：2004-06-18
申请人： Masayoshi Hiramoto , Akihiro Odagawa , Nozomu Matukawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Akihiro Odagawa , Nozomu Matukawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/33 , G11B5/127 , H01L21/00
CPC分类号： H01L43/12 , H01L43/10 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： The present invention provides a magnetoresistive element that includes a pair of magnetic layers and an intermediate layer between the magnetic layers. The intermediate layer contains at least three elements selected from Groups 2 to 17, and the elements include at least one selected from the group consisting of F, O, N, C and B. According to the invention, a magnetoresistive element with high magnetoresistance change ratio and low resistance can be provided. The invention also provides a method for producing a magnetoresistive element. The method includes forming a precursor and forming at least one part of the intermediate layer from the precursor. The precursor is reacted with at least one reactive species selected from the group consisting of oxygen atoms, nitrogen atoms and carbon atoms in a reactive atmosphere containing the reactive species.

5. 发明申请

US20050111147A1 Method for forming a compound magnetic thin film 审中-公开
标题翻译：形成复合磁性薄膜的方法
公开(公告)号：US20050111147A1
公开(公告)日：2005-05-26
申请号：US11024336
申请日：2004-12-28
申请人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
发明人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
IPC分类号： H01F10/14 , H01L43/08 , H01L43/10 , H01L43/12 , G11B5/33 , G11B5/127 , G11B5/17
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T428/1107
摘要： A magnetoresistive element includes a pair of magnetic layers sandwiching an intermediate layer, at least one of the magnetic layers includes an oxide ferrite having a plane orientation with a (100), (110) or (111) plane. The oxide can be formed by sputtering with an oxide target while applying a bias voltage to a substrate including a plane on which the oxide ferrite is to be formed so as to adjust the amount of oxygen supplied to the oxide ferrite from the target. One of the magnetic layers is a pinned magnetic layer, and the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching the non-magnetic film. The magnetic films can be coupled with one another by magnetostatic coupling or antiferromagnetic coupling, generating negative magnetic coupling. Magnetic shifts are reduced by generating negative coupling. This element also has an improved thermal resistance.
摘要翻译：磁阻元件包括夹着中间层的一对磁性层，至少一个磁性层包括具有（100），（110）或（111）面的平面取向的氧化物铁氧体。氧化物可以通过用氧化物靶溅射形成，同时向包括要在其上形成氧化物铁氧体的平面的衬底施加偏置电压，以便调节从目标物供给到氧化物铁氧体的氧的量。磁性层中的一个是钉扎磁性层，并且被钉扎的磁性层包括至少一个非磁性膜和夹住非磁性膜的磁性膜。磁膜可以通过静磁耦合或反铁磁耦合彼此耦合，产生负磁耦合。通过产生负耦合来减少磁位移。该元件还具有改善的耐热性。

6. 发明授权

US06680831B2 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film 失效
标题翻译：磁阻元件及其制造方法以及复合磁性薄膜的形成方法
公开(公告)号：US06680831B2
公开(公告)日：2004-01-20
申请号：US09948175
申请日：2001-09-06
申请人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
发明人： Masayoshi Hiramoto , Hiroshi Sakakima , Hideaki Adachi , Nozomu Matukawa , Kenji Iijima , Mitsuo Satomi
IPC分类号： G11B539
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T428/1107
摘要： The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magnetic film, and the magnetic films are coupled with one another by magnetostatic coupling via the non-magnetic film. This element has an improved thermal resistance. Furthermore, the invention provides a magnetoresistive element in which the pinned magnetic layer is as described above. The magnetic films can be coupled with one another by magnetostatic coupling or antiferromagnetic coupling generating negative magnetic coupling. In this element, the magnetic field shift is reduced. Furthermore, the invention provides a magnetoresistive element in which at least one of the magnetic layers sandwiching the intermediate layer includes an oxide ferrite having a plane orientation with a (100), (110) or (111) plane. A magnetic field is introduced in a direction of the axis of easy magnetization in the plane. This oxide can be formed by sputtering with an oxide target while applying a bias voltage to a substrate including a plane on which the oxide ferrite is to be formed so as to adjust the amount of oxygen supplied to the oxide ferrite from the target.
摘要翻译：本发明提供了一种磁阻元件，其中被钉扎的磁性层包括至少一个非磁性膜和夹在该非磁性膜上的磁性膜，并且磁性膜通过非磁性膜的静磁耦合彼此耦合。该元件具有改善的热阻。此外，本发明提供一种磁阻元件，其中钉扎磁性层如上所述。磁性膜可以通过产生负磁耦合的静磁耦合或反铁磁耦合彼此耦合。在该元件中，磁场偏移被减小。此外，本发明提供一种磁阻元件，其中夹持中间层的至少一个磁性层包括具有（100），（110）或（111）面的平面取向的氧化物铁氧体。在平面中的易磁化轴的方向上引入磁场。该氧化物可以通过用氧化物靶溅射形成，同时向包括要在其上形成氧化物铁氧体的平面的衬底施加偏置电压，以调节从目标物供给到氧化物铁氧体的氧的量。

7. 发明授权

US06798620B2 Magneto-resistive element, magnetic head, and magnetic recording and reproduction apparatus 失效
标题翻译：磁电元件，磁头和磁记录和再现装置
公开(公告)号：US06798620B2
公开(公告)日：2004-09-28
申请号：US10441794
申请日：2003-05-20
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要翻译：一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜，形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层，层形成在非磁性层的表面上。

8. 发明授权

US06785100B2 Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
标题翻译：磁头包括多层磁阻器件和用于将磁通从介质引入到磁阻器件的磁轭
公开(公告)号：US06785100B2
公开(公告)日：2004-08-31
申请号：US09829400
申请日：2001-04-09
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

9. 发明授权

US06977799B2 Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
标题翻译：磁头包括多层磁阻器件和用于将磁通量从介质引入到磁阻器件的磁轭
公开(公告)号：US06977799B2
公开(公告)日：2005-12-20
申请号：US10896774
申请日：2004-07-22
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/012 , G11B5/11 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

10. 发明授权

US07012790B2 Magnetic head with yoke and multiple magnetic layers 失效
标题翻译：磁头与磁轭和多个磁性层
公开(公告)号：US07012790B2
公开(公告)日：2006-03-14
申请号：US10896795
申请日：2004-07-22
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

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