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1. 发明授权

US08395269B2 Method of stacking semiconductor chips including forming an interconnect member and a through electrode 有权
标题翻译：堆叠包括形成互连部件和贯通电极的半导体芯片的方法
公开(公告)号：US08395269B2
公开(公告)日：2013-03-12
申请号：US12656616
申请日：2010-02-04
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L21/50
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔以穿透无机绝缘层和半导体衬底。

2. 发明授权

US08102049B2 Semiconductor device including through electrode and method of manufacturing the same 有权
标题翻译：包括通孔电极的半导体器件及其制造方法
公开(公告)号：US08102049B2
公开(公告)日：2012-01-24
申请号：US11842973
申请日：2007-08-22
申请人： Nobuaki Takahashi , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
发明人： Nobuaki Takahashi , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
IPC分类号： H01L23/52
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/05001 , H01L2224/0554 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/11901 , H01L2224/13009 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/14181 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/00014
摘要： The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.
摘要翻译：本发明提供一种半导体器件，其包括绝缘层和各自包括形成在其中的孔的半导体层中的至少一个，以及设置在孔中的通孔。在半导体装置中，孔的侧壁由从孔的开口到孔的开口部与孔的底面之间的规定位置的第一区域和从规定位置到第二区域孔的底面。通孔包括种子层和镀层。种子层覆盖孔的第二区域和底部表面而不覆盖第一区域。此外，电镀层覆盖种子层和第一区域的至少一部分。

3. 发明授权

US07892973B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07892973B2
公开(公告)日：2011-02-22
申请号：US12605586
申请日：2009-10-26
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

4. 发明申请

US20100144091A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100144091A1
公开(公告)日：2010-06-10
申请号：US12656616
申请日：2010-02-04
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L21/50
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔以穿透无机绝缘层和半导体衬底。

5. 发明授权

US08456019B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08456019B2
公开(公告)日：2013-06-04
申请号：US13461230
申请日：2012-05-01
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L23/42 , H01L23/52
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

6. 发明授权

US08183685B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08183685B2
公开(公告)日：2012-05-22
申请号：US12986716
申请日：2011-01-07
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L23/04 , H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

7. 发明授权

US07633167B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07633167B2
公开(公告)日：2009-12-15
申请号：US11528655
申请日：2006-09-28
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

8. 发明申请

US20070126085A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070126085A1
公开(公告)日：2007-06-07
申请号：US11602346
申请日：2006-11-21
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L23/48 , H01L21/58
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes an interconnect member, a first semiconductor chip, a second semiconductor chip, a resin layer, an inorganic insulating layer, and a through electrode. The first semiconductor chip is mounted in a face-down manner on the interconnect member. The resin layer covers the side surface of the first semiconductor chip. This inorganic insulating layer is in contact with the back surface of the first semiconductor chip, and directly covers the back surface. Also, the inorganic insulating layer extends over the resin layer. The through electrode penetrates the inorganic insulating layer and the semiconductor substrate of the first semiconductor chip. The second semiconductor chip is mounted in a face-down manner on the inorganic insulating layer that covers the back surface of the first semiconductor chip in the uppermost layer.
摘要翻译：半导体器件包括互连部件，第一半导体芯片，第二半导体芯片，树脂层，无机绝缘层和贯通电极。第一半导体芯片以面朝下的方式安装在互连构件上。树脂层覆盖第一半导体芯片的侧表面。该无机绝缘层与第一半导体芯片的背面接触，直接覆盖背面。此外，无机绝缘层在树脂层上延伸。贯通电极穿透第一半导体芯片的无机绝缘层和半导体衬底。第二半导体芯片以面朝下的方式安装在覆盖最上层的第一半导体芯片的背面的无机绝缘层上。

9. 发明申请

US20070069364A1 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070069364A1
公开(公告)日：2007-03-29
申请号：US11528655
申请日：2006-09-28
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi
IPC分类号： H01L21/20
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13 , H01L2224/13025 , H01L2224/14181
摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要翻译：在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130。此外，半导体器件100还包括至少设置在半导体衬底101的器件形成表面的后表面附近以与通孔129接触并突出于其中的突出部分146。方向沿着半导体衬底101的表面朝向通孔电极129的内部。

10. 发明申请

US20080048337A1 SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：包括电极的半导体器件及其制造方法
公开(公告)号：US20080048337A1
公开(公告)日：2008-02-28
申请号：US11842973
申请日：2007-08-22
申请人： Nobuaki TAKAHASHI , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
发明人： Nobuaki TAKAHASHI , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/05001 , H01L2224/0554 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/11901 , H01L2224/13009 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/14181 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/00014
摘要： The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.
摘要翻译：本发明提供一种半导体器件，其包括绝缘层和各自包括形成在其中的孔的半导体层中的至少一个，以及设置在孔中的通孔。在半导体装置中，孔的侧壁由从孔的开口到孔的开口部与孔的底面之间的规定位置的第一区域和从规定位置到第二区域孔的底面。通孔包括种子层和镀层。种子层覆盖孔的第二区域和底部表面而不覆盖第一区域。此外，电镀层覆盖种子层和第一区域的至少一部分。

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