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1. 发明申请

US20130029964A1 [5, 6] HETEROCYCLIC COMPOUND 审中-公开
标题翻译： [5,6]杂环化合物
公开(公告)号：US20130029964A1
公开(公告)日：2013-01-31
申请号：US13595608
申请日：2012-08-27
申请人： Kazumasa Aoki , Satoshi Matsui , Kenji Yoshikawa , Hiroki Shimizu , Junko Sasaki , Katsuyoshi Nakajima , Osamu Kanno , Kiyoshi Oizumi
发明人： Kazumasa Aoki , Satoshi Matsui , Kenji Yoshikawa , Hiroki Shimizu , Junko Sasaki , Katsuyoshi Nakajima , Osamu Kanno , Kiyoshi Oizumi
IPC分类号： A61K31/4184 , C07D471/04 , A61K31/437 , C07D235/14 , C07D401/10 , C07D413/10 , A61K31/5377 , C07D405/12 , C07D491/056 , A61K31/4188 , C07D403/10 , A61K31/496 , A61K31/506 , A61K31/454 , A61K31/4439 , A61P19/08 , A61P19/10 , C07D235/12
CPC分类号： C07D235/06 , A61K31/4184 , A61K31/4188 , A61K31/437 , A61K31/4439 , A61K31/454 , A61K31/496 , A61K31/506 , A61K31/5377 , C07D401/04 , C07D403/04 , C07D405/12 , C07D405/14 , C07D417/04 , C07D471/04 , C07D491/056
摘要： An object of the present invention is to provide a novel low molecular weight compound exhibiting an osteogenesis-promoting action. This object is achieved by a compound having the general formula (I) or a pharmacologically acceptable salt thereof. In the general formula (I), R1 and R2 represent hydrogen atoms, and the like; R3 represents a hydrogen atom, and the like; X, Y, and Z represent nitrogen atoms, and the like; A represents a phenylene group, and the like; n represents 1 or 2, and the like; and V and W represent oxygen atoms, and the like.
摘要翻译：本发明的目的是提供一种表现出成骨促进作用的新型低分子量化合物。该目的通过具有通式（I）的化合物或其药理学上可接受的盐来实现。在通式（I）中，R 1和R 2表示氢原子等; R3表示氢原子等; X，Y和Z表示氮原子等; A表示亚苯基等; n表示1或2，等等; V和W表示氧原子等。

2. 发明授权

US08217516B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08217516B2
公开(公告)日：2012-07-10
申请号：US12477178
申请日：2009-06-03
申请人： Nobuaki Takahashi , Masahiro Komuro , Satoshi Matsui
发明人： Nobuaki Takahashi , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L23/24
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/11 , H01L24/13 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/05684 , H01L2224/13009 , H01L2224/131 , H01L2224/13562 , H01L2224/1357 , H01L2224/13644 , H01L2224/13664 , H01L2224/17181 , H01L2924/00014
摘要： In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r3 from the circumference of the opening pattern to the central axis of the through-hole is smaller than the distance r1 in the through-hole. By providing the opening pattern, the conductive pattern is exposed at the bottom surface of the through-hole. The bump is located on the back surface side of the substrate, and is formed integrally with the through-electrode.
摘要翻译：在该半导体装置中，通孔形成在基板上，位于导电图案的下方。绝缘层位于通孔的底面。导电图案位于基板的一个表面侧。开口图案形成在位于通孔和导电图案之间的绝缘层中，其中从开口图案的周边到通孔的中心轴线的距离r3小于通孔中的距离r1 通孔。通过设置开口图案，导电图案在通孔的底面露出。凸块位于基板的背面侧，与贯通电极一体形成。

3. 发明授权

US08078887B2 Power supply voltage regulator circuit and microcomputer 有权
标题翻译：电源稳压电路和微电脑
公开(公告)号：US08078887B2
公开(公告)日：2011-12-13
申请号：US12043506
申请日：2008-03-06
申请人： Satoshi Matsui
发明人： Satoshi Matsui
IPC分类号： G06F1/00 , G06F1/26 , G06F1/32
CPC分类号： G06F1/26 , G06F1/32
摘要： A power supply voltage regulator circuit including a power supply circuit which switches to a first through a fourth state; the first state being the state wherein voltage is supplied to neither a normal circuit nor a backup system circuit based on the combination of logic for the normal circuit power control signal, the second state being the state wherein a primary power supply voltage is supplied to the normal circuit and a secondary power supply voltage is supplied to the backup system circuit, the third state being the state wherein voltage is not supplied to the normal circuit and the secondary power supply voltage is supplied to the backup system circuit, the fourth state being the state wherein the primary power supply voltage is supplied to both the normal circuit and the backup system circuit.
摘要翻译：一种电源稳压器电路，包括切换到第一至第四状态的电源电路; 第一状态是基于用于正常电路功率控制信号的逻辑的组合而不向正常电路和备用系统电路供应电压的状态，第二状态是向第一状态提供主电源电压的状态正常电路和次级电源电压被提供给备用系统电路，第三状态是其中电压不被提供给正常电路并且次级电源电压被提供给备用系统电路的状态，第四状态是其中主电源电压被提供给正常电路和备用系统电路。

4. 发明申请

US20080296779A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080296779A1
公开(公告)日：2008-12-04
申请号：US12127149
申请日：2008-05-27
申请人： Satoshi MATSUI , Yoichiro Kurita
发明人： Satoshi MATSUI , Yoichiro Kurita
IPC分类号： H01L23/538 , H01L21/58
CPC分类号： H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/48091 , H01L2224/48227 , H01L2224/73257 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06593 , H01L2924/00011 , H01L2924/00014 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/3511 , H01L2924/00
摘要： Aimed at providing a semiconductor device improved in reliability of bonding and yield of products, even when semiconductor chips having through electrodes are used, the semiconductor device of the present invention has a substrate; a stack placed on the substrate, and composed of a plurality of semiconductor chips (first semiconductor chip and second semiconductor chip), each having through electrodes, stacked while placing bumps connected to the through electrodes in between; and a reinforcing chip (semiconductor chip) provided on the stack specifically on the surface thereof opposite to the substrate-side surface, or between the substrate and the stack, wherein thickness of the reinforcing chip is larger than the thickest semiconductor chip out of the plurality of semiconductor chips.
摘要翻译：本发明的半导体器件即使在使用具有贯通电极的半导体芯片的情况下，也能够提供可以提高接合的可靠性和产率的半导体器件，所以具有基板; 放置在基板上的叠层，由多个半导体芯片（第一半导体芯片和第二半导体芯片）构成，每个半导体芯片（第一半导体芯片和第二半导体芯片）各自具有贯穿电极，同时放置连接到贯穿电极的凸块; 以及在与该基板侧表面相对的表面上或该基板与该堆叠体之间特别设置在该叠层上的加强芯片（半导体芯片），其中，所述加强芯片的厚度大于所述多个半导体芯片中的最厚的半导体芯片的半导体芯片。

5. 发明授权

US07315158B1 Pulse width modulation circuit 有权
标题翻译：脉宽调制电路
公开(公告)号：US07315158B1
公开(公告)日：2008-01-01
申请号：US11494620
申请日：2006-07-28
申请人： Satoshi Matsui
发明人： Satoshi Matsui
IPC分类号： G05F1/40
CPC分类号： H03K7/08
摘要： A PWM circuit includes a counter, a cycle register, a cycle detector, a pulse width register, a pulse width detector, an additional pulse width register, a voltage generator, a selector, and a voltage controller. The voltage controller controls the selector so as to add a first additional pulse at a first voltage to the end of a pulse width, based on a cycle detection signal outputted by the cycle detector, a pulse width detection signal outputted by the pulse width detector, and a set value indicating the first voltage of the first additional pulse outputted by the additional pulse register, thereby deciding a voltage outputted from the PWM circuit and a period in which the voltage is output.
摘要翻译： PWM电路包括计数器，周期寄存器，周期检测器，脉冲宽度寄存器，脉冲宽度检测器，附加脉冲宽度寄存器，电压发生器，选择器和电压控制器。电压控制器根据循环检测器输出的周期检测信号，由脉冲宽度检测器输出的脉冲宽度检测信号，控制选择器，以将第一电压的第一附加脉冲加到脉冲宽度的末端，以及指示由附加脉冲寄存器输出的第一附加脉冲的第一电压的设定值，从而判定从PWM电路输出的电压和输出电压的周期。

6. 发明授权

US07270091B2 Cooling water passage structure for an engine 有权
标题翻译：发动机冷却水通道结构
公开(公告)号：US07270091B2
公开(公告)日：2007-09-18
申请号：US11246093
申请日：2005-10-11
申请人： Satoshi Matsui , Toshihiko Oka , Koichi Yoshimoto , Yoshinori Sakurai , Akimasa Yamamoto
发明人： Satoshi Matsui , Toshihiko Oka , Koichi Yoshimoto , Yoshinori Sakurai , Akimasa Yamamoto
IPC分类号： F02F1/36
CPC分类号： F02F1/40
摘要： A pair of exhaust ports (4, 4) have flat portions (9, 9) formed on respective inner peripheral surfaces thereof and facing in directions opposite to each other. An intervening cooling water passage (14) is formed between the flat portions (9, 9) when a cylinder head (1) is cast.
摘要翻译：一对排气口（4,4）具有形成在其各自的内周面上且相对于彼此相反的方向的平坦部分（9,9）。当铸造气缸盖（1）时，在平坦部分（9,9）之间形成中间冷却水通道（14）。

7. 发明申请

US20070126085A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070126085A1
公开(公告)日：2007-06-07
申请号：US11602346
申请日：2006-11-21
申请人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
发明人： Masaya Kawano , Koji Soejima , Nobuaki Takahashi , Yoichiro Kurita , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L23/48 , H01L21/58
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes an interconnect member, a first semiconductor chip, a second semiconductor chip, a resin layer, an inorganic insulating layer, and a through electrode. The first semiconductor chip is mounted in a face-down manner on the interconnect member. The resin layer covers the side surface of the first semiconductor chip. This inorganic insulating layer is in contact with the back surface of the first semiconductor chip, and directly covers the back surface. Also, the inorganic insulating layer extends over the resin layer. The through electrode penetrates the inorganic insulating layer and the semiconductor substrate of the first semiconductor chip. The second semiconductor chip is mounted in a face-down manner on the inorganic insulating layer that covers the back surface of the first semiconductor chip in the uppermost layer.
摘要翻译：半导体器件包括互连部件，第一半导体芯片，第二半导体芯片，树脂层，无机绝缘层和贯通电极。第一半导体芯片以面朝下的方式安装在互连构件上。树脂层覆盖第一半导体芯片的侧表面。该无机绝缘层与第一半导体芯片的背面接触，直接覆盖背面。此外，无机绝缘层在树脂层上延伸。贯通电极穿透第一半导体芯片的无机绝缘层和半导体衬底。第二半导体芯片以面朝下的方式安装在覆盖最上层的第一半导体芯片的背面的无机绝缘层上。

8. 发明授权

US07152566B2 Cylinder head structure 有权
标题翻译：气缸盖结构
公开(公告)号：US07152566B2
公开(公告)日：2006-12-26
申请号：US11125143
申请日：2005-05-10
申请人： Satoshi Matsui , Toshihiko Oka , Koichi Yoshimoto , Yoshinori Sakurai , Tetsushi Nagira , Kenichi Morishima
发明人： Satoshi Matsui , Toshihiko Oka , Koichi Yoshimoto , Yoshinori Sakurai , Tetsushi Nagira , Kenichi Morishima
IPC分类号： F02F1/10 , F02F1/36
CPC分类号： F02F1/40 , F02B31/00
摘要： The bottom surface 18 of the cylinder head 10 is formed by an intake-side bottom surface 18a and an exhaust-side bottom surface 18b on which an intake port 13 and an exhaust port 15 are formed respectively. Further, a first wall 19 formed between an intake-side water jacket 16 and the intake-side bottom surface 18a is larger in thickness than a second wall 20 formed between an exhaust-side water jacket 17 and the exhaust-side bottom surface 18b. This structure can reduce an amount of HC included in exhaust gas.
摘要翻译：气缸盖10的底表面18由分别形成有进气口13和排气口15的进气侧底面18a和排气侧底面18b形成。此外，形成在进气侧水套16和进气侧底面18a之间的第一壁19的厚度大于形成在排气侧水套17和排气侧底面18之间的第二壁20 b。该结构可以减少废气中包含的HC的量。

9. 发明授权

US07127786B2 Machine tool 有权
标题翻译：机床
公开(公告)号：US07127786B2
公开(公告)日：2006-10-31
申请号：US11366576
申请日：2006-03-03
申请人： Kazuyuki Hiramoto , Akihiro Mochizuki , Shunsuke Nakazawa , Satoshi Matsui
发明人： Kazuyuki Hiramoto , Akihiro Mochizuki , Shunsuke Nakazawa , Satoshi Matsui
IPC分类号： B23Q7/00
CPC分类号： B23Q1/012 , B23Q1/015 , B23Q3/157 , B23Q3/15713 , B23Q3/15766 , Y10T29/5196 , Y10T408/91 , Y10T409/30532 , Y10T409/306048 , Y10T409/307728 , Y10T409/308288 , Y10T409/309576 , Y10T483/1733 , Y10T483/1748 , Y10T483/1752 , Y10T483/1755 , Y10T483/1757 , Y10T483/176
摘要： The present invention provides a machine tool capable of enhancing approachability to a spindle to improve work efficiency even when it includes a workpiece changer. The present invention includes: a bed; a saddle disposed on the bed to be movable in a forward and backward (Y-axis) direction in a front view of the machine tool; a table disposed on the saddle to be movable in a right and left (X-axis) direction; a column having a shape of a gate bridged over a travel range of the table and fixed on the bed; a spindle head disposed on the column to support a spindle and movable in a vertical (Z-axis) direction; a workpiece changer that turns a workpiece together with a pallet or turns the workpiece independently, for workpiece replacement, between a workpiece standby position set on a back face side of the bed and the table placed at a workpiece change position, the workpiece changer being disposed so as to set the workpiece change position at a position under the column.
摘要翻译：本发明提供了一种能够提高对主轴的接近性的机床，即使在包括工件更换器时也能提高工作效率。本发明包括：床; 设置在所述床上的鞍座，其可以在所述机床的前视图中沿前后方向（Y轴）方向移动; 设置在所述鞍座上以能够在左右（X轴）方向上移动的工作台; 一个具有一个栅格形状的柱，该栅栏桥接在工作台的行进范围上并固定在床上; 主轴头，其设置在所述柱上以支撑主轴并可在垂直（Z轴）方向上移动; 工件更换器，其将工件与托盘一起转动或者独立地转动工件，用于工件更换，在设置在床的背面侧的工件备用位置和放置在工件更换位置的工作台之间，设置工件更换器以便将工件更换位置设置在柱下方的位置。

10. 发明授权

US07006936B2 Pulse width measuring device with automatic range setting function 失效
标题翻译：具有自动量程设定功能的脉宽测量装置
公开(公告)号：US07006936B2
公开(公告)日：2006-02-28
申请号：US11085138
申请日：2005-03-22
申请人： Satoshi Matsui
发明人： Satoshi Matsui
IPC分类号： G06F19/00
CPC分类号： G01R29/02 , G01R31/2882 , G01R31/31725 , G01R31/31937
摘要： A pulse width measuring device is disclosed that calculates the pulse width of a signal to be measured, based on a count value and a count clock signal. In the pulse width measuring device, the counter circuit has a plurality of bits that are divided into an exponent and a significand. The control unit of the pulse width measuring device includes: an exponent storing unit that stores an exponent setting value that represents the number of bits of the exponent of the counter circuit; and a decoder unit that generates a count value setting signal for rewriting the count value of the counter circuit, based on the exponent setting value stored in the exponent storing unit, when the count value overflows in the counter circuit, the decoder unit then outputting the count value setting signal to the counter circuit.
摘要翻译：公开了一种基于计数值和计数时钟信号来计算要测量的信号的脉冲宽度的脉宽测量装置。在脉宽测量装置中，计数器电路具有被分成指数和有效位数的多个位。脉宽测量装置的控制单元包括：指数存储单元，其存储表示计数器电路的指数的位数的指数设定值; 以及解码器单元，当计数器电路中的计数值溢出时，基于存储在指数存储单元中的指数设定值，生成用于重写计数器电路的计数值的计数值设定信号，然后输出计数值设定信号到计数器电路。

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