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1. 发明申请

US20110174288A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 审中-公开
标题翻译：氮化物半导体激光光源的制造方法以及氮化物半导体激光光源的制造装置
公开(公告)号：US20110174288A1
公开(公告)日：2011-07-21
申请号：US13064534
申请日：2011-03-30
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： F24B1/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

2. 发明授权

US07939433B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US07939433B2
公开(公告)日：2011-05-10
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

3. 发明授权

US07833834B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07833834B2
公开(公告)日：2010-11-16
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

4. 发明申请

US20060068516A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US20060068516A1
公开(公告)日：2006-03-30
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00 , B29C65/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the, cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，杆或盖的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

5. 发明授权

US07790484B2 Method for manufacturing laser devices 有权
标题翻译：制造激光装置的方法
公开(公告)号：US07790484B2
公开(公告)日：2010-09-07
申请号：US11446982
申请日：2006-06-06
申请人： Masaya Ishida , Atsushi Ogawa , Daisuke Hanaoka
发明人： Masaya Ishida , Atsushi Ogawa , Daisuke Hanaoka
IPC分类号： H01L21/00
CPC分类号： H01S5/0021 , H01L2224/48091 , H01L2224/73265 , H01L2924/3025 , H01S5/0201 , H01S5/02212 , H01S5/0222 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.
摘要翻译：一种激光装置的制造方法，其特征在于，具有：通过在高于熔点的温度下熔融金属，通过熔融金属，将激光芯片固定在保持器上，加热激光芯片固定的保持体温度低于熔点，然后通过用盖盖住激光芯片固定的保持器来密封激光芯片。加热步骤可以在产生臭氧的气氛或产生氧等离子体的气氛中进行。此外，将激光芯片固定的保持器用盖子覆盖，以在干燥空气或惰性气体中形成气密密封的包装，然后在加热时将紫外线照射到包装中。

6. 发明申请

US20100197056A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US20100197056A1
公开(公告)日：2010-08-05
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L33/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

7. 发明授权

US07691729B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07691729B2
公开(公告)日：2010-04-06
申请号：US11889767
申请日：2007-08-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体的方法，激光光源具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

8. 发明申请

US20070292980A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US20070292980A1
公开(公告)日：2007-12-20
申请号：US11889767
申请日：2007-08-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00 , B29C65/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体的方法，激光光源具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

9. 发明申请

US20060281202A1 Method for manufacturing laser devices 有权
标题翻译：制造激光装置的方法
公开(公告)号：US20060281202A1
公开(公告)日：2006-12-14
申请号：US11446982
申请日：2006-06-06
申请人： Masaya Ishida , Atsushi Ogawa , Daisuke Hanaoka
发明人： Masaya Ishida , Atsushi Ogawa , Daisuke Hanaoka
IPC分类号： H01L21/00
CPC分类号： H01S5/0021 , H01L2224/48091 , H01L2224/73265 , H01L2924/3025 , H01S5/0201 , H01S5/02212 , H01S5/0222 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.
摘要翻译：一种激光装置的制造方法，其特征在于，具有：通过在高于熔点的温度下熔融金属，通过熔融金属，将激光芯片固定在保持器上，加热激光芯片固定的保持体温度低于熔点，然后通过用盖盖住激光芯片固定的保持器来密封激光芯片。加热步骤可以在产生臭氧的气氛或产生氧等离子体的气氛中进行。此外，将激光芯片固定的保持器用盖子覆盖，以在干燥空气或惰性气体中形成气密密封的包装，然后在加热时将紫外线照射到包装中。

10. 发明授权

US07700001B2 Light-emitting apparatus, phosphor and method of producing it 有权
标题翻译：发光装置，荧光体及其制造方法
公开(公告)号：US07700001B2
公开(公告)日：2010-04-20
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/02 , C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

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