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1. 发明申请

US20100197056A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US20100197056A1
公开(公告)日：2010-08-05
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L33/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

2. 发明申请

US20110174288A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 审中-公开
标题翻译：氮化物半导体激光光源的制造方法以及氮化物半导体激光光源的制造装置
公开(公告)号：US20110174288A1
公开(公告)日：2011-07-21
申请号：US13064534
申请日：2011-03-30
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： F24B1/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

3. 发明授权

US07939433B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US07939433B2
公开(公告)日：2011-05-10
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

4. 发明授权

US07833834B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07833834B2
公开(公告)日：2010-11-16
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

5. 发明申请

US20060068516A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US20060068516A1
公开(公告)日：2006-03-30
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00 , B29C65/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the, cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，杆或盖的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

6. 发明授权

US07691729B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07691729B2
公开(公告)日：2010-04-06
申请号：US11889767
申请日：2007-08-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体的方法，激光光源具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

7. 发明申请

US20070292980A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US20070292980A1
公开(公告)日：2007-12-20
申请号：US11889767
申请日：2007-08-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00 , B29C65/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体的方法，激光光源具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

8. 发明申请

US20050045979A1 Light receiving device circuit-built-in type light receiving unit and optical disk unit 审中-公开
标题翻译：光接收装置电路内置型光接收单元和光盘单元
公开(公告)号：US20050045979A1
公开(公告)日：2005-03-03
申请号：US10497242
申请日：2002-11-29
申请人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/0216 , H01L31/103 , H01L27/14
CPC分类号： H01L31/02161 , H01L31/103 , H01L31/1035
摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.
摘要翻译：在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型以相应地减小光接收单元之间的泄漏电流。

9. 发明授权

US08358675B2 Nitride semiconductor laser device and wafer 有权
标题翻译：氮化物半导体激光器件和晶圆
公开(公告)号：US08358675B2
公开(公告)日：2013-01-22
申请号：US12801800
申请日：2010-06-25
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S3/097
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译：提供了一种减小电容以获得更好响应的氮化物半导体激光器件。氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

10. 发明授权

US07307326B2 Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US07307326B2
公开(公告)日：2007-12-11
申请号：US10499357
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/00 , H01L31/0232
CPC分类号： H01L31/103 , H01L31/02161
摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.
摘要翻译：光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

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