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1. 发明授权

US4867226A Method of oscillating continuous casting mold at high frequencies and mold oscillated by such method 失效
标题翻译：高频振荡连续铸模的方法和通过这种方法振荡的模具
公开(公告)号：US4867226A
公开(公告)日：1989-09-19
申请号：US237740
申请日：1988-08-29
申请人： Masatsugu Uehara , Haruo Kitamura , Kenzo Sawada , Tetsuo Nakamura , Takashi Ishizawa , Katsuhiko Yui , Yuichi Kato , Ryuichi Hiratsuka , Daijiro Mizukoshi , Masamitsu Wakoh , Junichi Kinoshita
发明人： Masatsugu Uehara , Haruo Kitamura , Kenzo Sawada , Tetsuo Nakamura , Takashi Ishizawa , Katsuhiko Yui , Yuichi Kato , Ryuichi Hiratsuka , Daijiro Mizukoshi , Masamitsu Wakoh , Junichi Kinoshita
IPC分类号： B22D11/053 , B22D11/16 , B22D11/04
CPC分类号： B22D11/053 , B22D11/166
摘要： A method of oscillating a continuous caster mold at high frequencies comprises disposing a plurality of oscillators having substantially the same oscillating characteristic at appropriate intervals along or in the vicinity of a line where liquid metal contacts an inner lining of a mold, connecting the tip of each oscillator to the inner lining so that the axis of the oscillator extends at right angles to the surface of the inner lining, and supplying power from an oscillation generator to each oscillator so that the oscillation frequencies of any two adjoining oscillators are differentiated within the limit of 2 KHz. Thus, any two adjoining oscillators oscillate the inner lining at right angles to the surface thereof at mutually differentiated frequencies.

2. 发明授权

US5247536A Semiconductor laser distributed feedback laser including mode interrupt means 失效
标题翻译：半导体激光分布反馈激光器包括模式中断手段
公开(公告)号：US5247536A
公开(公告)日：1993-09-21
申请号：US936367
申请日：1992-09-02
申请人： Junichi Kinoshita
发明人： Junichi Kinoshita
IPC分类号： H01S5/10 , H01S5/12 , H01S5/227
CPC分类号： H01S5/227 , H01S5/10 , H01S5/12 , H01S5/2275
摘要： A buried heterostructure type distributed feedback semiconductor laser comprises a semiconductor substrate transparent to an oscillation light beam, a laser stripe including a diffraction grating, an active layer, and a guiding layer formed on the semiconductor substrate, and semiconductor peripheral region formed so as to cover the laser stripe on the semiconductor substrate. The semiconductor peripheral region is transparent to an oscillation light beam. Rectangular grooves are formed near both sides of emission facet of the laser stripe more deeply than the laser stripe. Since a radiation mode from the laser stripe is reflected and scattered by the grooves, it cannot hardly reach the emission facet. Therefore, the radiation mode does not interfere with an output beam from the laser.
摘要翻译：掩埋异质结型分布反馈半导体激光器包括对振荡光束透明的半导体衬底，包括衍射光栅的激光条纹，有源层和形成在半导体衬底上的引导层，以及形成为覆盖的半导体外围区域半导体衬底上的激光条纹。半导体周边区域对于振荡光束是透明的。在激光条纹的发射面的两侧附近形成比激光条纹更深的矩形槽。由于来自激光条纹的辐射模式被凹槽反射和散射，所以不能很难到达发射面。因此，辐射模式不会干扰来自激光器的输出光束。

3. 发明授权

US4958357A Grating-coupled surface emitting laser and method for the modulation thereof 失效
标题翻译：光栅耦合表面发射激光器及其调制方法
公开(公告)号：US4958357A
公开(公告)日：1990-09-18
申请号：US286027
申请日：1988-12-19
申请人： Junichi Kinoshita
发明人： Junichi Kinoshita
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/12 , H01S5/187
CPC分类号： H01S5/187 , H01S5/0425 , H01S5/06213 , H01S5/12
摘要： Disclosed is a grating-coupled surface emitting laser capable of obtaining a beam with high directivity, structured by forming a light output window in a limited regions with high intensity radiations along the propagation direction. Its intensity distribution of radiation mode along the axis can be controlled by injecting a current independently into the multiply-divided electrodes or by pumping optically these electrodes independently. The control is, in principle, achieved by an equivalent change of the phase-shift of the gratings.

4. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

5. 发明授权

US06535537B1 Optical amplification and light emitting element 失效
标题翻译：光放大和发光元件
公开(公告)号：US06535537B1
公开(公告)日：2003-03-18
申请号：US09663867
申请日：2000-09-15
申请人： Junichi Kinoshita
发明人： Junichi Kinoshita
IPC分类号： H01S500
CPC分类号： H01S5/041 , H01S5/0092 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/1237 , H01S5/18319 , H01S5/4056
摘要： A medium having the function of light emission or optical amplification induced by optical pumping is surrounded by an annular laser (ring laser) having a diffraction grating (holographic structure) of the second order or more. The output of the ring laser emits through this diffraction grating (holographic structure) and is extracted as radiation mode. This is used as pumping light to be input to the medium that is disposed in the vicinity of the center of the assembly. To stabilize the threshold of the longitudinal mode, which has a greater amount of radiation mode, a gain medium and a reflective structure could be further provided around the periphery of this ring laser. This element also plays a role of optical pumping from the sides of a VCSEL.
摘要翻译：具有由光泵浦引起的发光或光放大功能的介质被具有二阶以上的衍射光栅（全息结构）的环形激光（环形激光器）包围。环形激光器的输出通过该衍射光栅（全息结构）发射并作为辐射模式被提取。这被用作泵浦光被输入到布置在组件中心附近的介质上。为了稳定具有更大量的辐射模式的纵向模式的阈值，可以围绕该环形激光器的周边进一步设置增益介质和反射结构。该元件也起到从VCSEL侧面进行光泵浦的作用。

6. 发明授权

US6018540A Semiconductor light emitting element and optical fiber transmission system 失效
标题翻译：半导体发光元件和光纤传输系统
公开(公告)号：US6018540A
公开(公告)日：2000-01-25
申请号：US988168
申请日：1997-12-11
申请人： Junichi Kinoshita
发明人： Junichi Kinoshita
IPC分类号： G02B6/42 , H01S5/00 , H01S5/042 , H01S5/068 , H01S5/12 , H01S5/187 , H01S5/343 , H01S3/025
CPC分类号： B82Y20/00 , H01S5/068 , H01S5/042 , H01S5/0425 , H01S5/12 , H01S5/187 , H01S5/34306 , H01S5/3434
摘要： Disclosed are a semiconductor light emitting element whose temperature characteristics are compensated for so as to provide a stable temperature characteristics in a temperature range from -40.degree. C. to +85.degree. C., and an optical fiber transmission system using the same semiconductor light emitting element. In the semiconductor light emitting element, an active layer (2) is buried on an n-type InP semiconductor substrate (1) formed with an n-side electrode (21). The upper layers (4, 5) are covered with an insulating film (22). A p-side electrode (20) is formed on the uppermost layer of the semiconductor substrate so as to cover the insulating film (22). A relatively large metallic resistance element (30) whose resistance increases with increasing temperature is wired on the insulating film (22) as a shunt path, so as to compensate for the temperature characteristics of the semiconductor light emitting element. Therefore, since leakage current is large at a low temperature, the threshold current is high, so that the slope efficiency is small. On the other hand, since leakage current is reduced at a high temperature, a rise in the threshold current and a drop of the slope efficiency can be both compensated for.
摘要翻译：公开了一种半导体发光元件，其温度特性被补偿以在-40℃至+ 85℃的温度范围内提供稳定的温度特性，以及使用相同半导体发光的光纤传输系统元件。在半导体发光元件中，有源层（2）埋设在形成有n侧电极（21）的n型InP半导体衬底（1）上。上层（4,5）被绝缘膜（22）覆盖。在半导体衬底的最上层形成p侧电极20，以覆盖绝缘膜22。电阻随着温度升高而增加的相对较大的金属电阻元件（30）作为分流路径被布线在绝缘膜（22）上，以补偿半导体发光元件的温度特性。因此，由于低温下的漏电流大，因此阈值电流高，斜率效率小。另一方面，由于漏电流在高温下降低，所以可以补偿阈值电流的上升和斜率效率的下降。

7. 发明授权

US5780320A Method of manufacturing a semiconductor laser including two sets of dicing grooves 失效
标题翻译：制造包括两组切割槽的半导体激光器的方法
公开(公告)号：US5780320A
公开(公告)日：1998-07-14
申请号：US542029
申请日：1995-10-12
申请人： Junichi Kinoshita
发明人： Junichi Kinoshita
IPC分类号： H01L21/304 , H01L21/306 , H01L33/14 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/02 , H01L21/00 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L21/3043 , H01S5/0201 , H01S5/0202 , H01S5/0203
摘要： A linear active layer, a current block layer and a clad layer are formed on the first major surface of a wafer, while a first electrode is formed on the second major surface of the wafer. A linear first opening is formed in the first electrode. The wafer exposed to the first opening is etched to form a first guide groove linearly extending in a direction perpendicular to the active layer. A second electrode is formed on the clad layer and etched to form a linear second opening therein. The clad layer, current block layer and wafer, located directly under the second opening, are etched to form a second guide groove thereon so as to extend in a direction parallel to the active layer. The wafer is cleaved along the first guide groove to form bars each having semiconductor lasers. The bars are arranged in parallel to one another and separated from one another by the second guide groove. The wafer is cleaved or cut along the second guide groove to obtain semiconductor chips.
摘要翻译：在晶片的第一主表面上形成线性有源层，电流阻挡层和覆盖层，而第一电极形成在晶片的第二主表面上。在第一电极中形成线性第一开口。蚀刻暴露于第一开口的晶片以形成在垂直于有源层的方向上线性延伸的第一引导槽。第二电极形成在包覆层上并被蚀刻以在其中形成线性第二开口。蚀刻位于第二开口正下方的包覆层，电流阻挡层和晶片，以在平行于活性层的方向上延伸形成第二引导槽。晶片沿着第一引导槽被切割，以形成各自具有半导体激光器的条。杆彼此平行地布置并且通过第二引导槽彼此分离。沿着第二导向槽切割或切割晶片以获得半导体芯片。

8. 发明授权

US08897334B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08897334B2
公开(公告)日：2014-11-25
申请号：US14342937
申请日：2012-02-07
申请人： Yuji Takeda , Junichi Kinoshita
发明人： Yuji Takeda , Junichi Kinoshita
IPC分类号： H01S5/00 , H01S3/097 , H01S5/022 , H01S5/042 , H01S5/024 , H01S5/028
CPC分类号： H01S5/022 , H01L2224/45144 , H01L2224/48091 , H01S5/005 , H01S5/02236 , H01S5/02276 , H01S5/02296 , H01S5/02476 , H01S5/0287 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes first and second electrodes, a semiconductor laser element, a bonding wire, a transparent frame section, and a lid section. The first electrode includes a convex section, a bottom surface surrounding the convex section, and a first surface. The second electrode includes a first surface opposed to the bottom surface of the first electrode and a second surface. The second electrode includes an opening section and a step section receding toward the first surface from the second surface. The semiconductor laser element is provided on the convex section and includes a light-emitting layer. The bonding wire is capable of electrically connecting the semiconductor laser element and the step section. The transparent frame section surrounds the convex section and is bonded to the bottom surface and the first surface of the second electrode. The lid section is bonded to the second surface of the second electrode.
摘要翻译：发光器件包括第一和第二电极，半导体激光元件，接合线，透明框架部分和盖部分。第一电极包括凸部，围绕凸部的底面以及第一面。第二电极包括与第一电极的底表面相对的第一表面和第二表面。第二电极包括从第二表面朝向第一表面后退的开口部分和台阶部分。半导体激光元件设置在凸部上并且包括发光层。接合线能够电连接半导体激光元件和台阶部。透明框架部分围绕凸部并且结合到第二电极的底表面和第一表面。盖部分结合到第二电极的第二表面。

9. 发明申请

US20140226689A1 Light Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20140226689A1
公开(公告)日：2014-08-14
申请号：US14342937
申请日：2012-02-07
申请人： Yuji Takeda , Junichi Kinoshita
发明人： Yuji Takeda , Junichi Kinoshita
IPC分类号： H01S5/022
CPC分类号： H01S5/022 , H01L2224/45144 , H01L2224/48091 , H01S5/005 , H01S5/02236 , H01S5/02276 , H01S5/02296 , H01S5/02476 , H01S5/0287 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes first and second electrodes, a semiconductor laser element, a bonding wire, a transparent frame section, and a lid section. The first electrode includes a convex section, a bottom surface surrounding the convex section, and a first surface. The second electrode includes a first surface opposed to the bottom surface of the first electrode and a second surface. The second electrode includes an opening section and a step section receding toward the first surface from the second surface. The semiconductor laser element is provided on the convex section and includes a light-emitting layer. The bonding wire is capable of electrically connecting the semiconductor laser element and the step section. The transparent frame section surrounds the convex section and is bonded to the bottom surface and the first surface of the second electrode. The lid section is bonded to the second surface of the second electrode.
摘要翻译：发光器件包括第一和第二电极，半导体激光元件，接合线，透明框架部分和盖部分。第一电极包括凸部，围绕凸部的底面以及第一面。第二电极包括与第一电极的底表面相对的第一表面和第二表面。第二电极包括从第二表面朝向第一表面后退的开口部分和台阶部分。半导体激光元件设置在凸部上并且包括发光层。接合线能够电连接半导体激光元件和台阶部。透明框架部分围绕凸部并且结合到第二电极的底表面和第一表面。盖部分结合到第二电极的第二表面。

10. 发明授权

US07411222B2 Package for light emitting element and manufacturing method thereof 有权
标题翻译：发光元件用封装及其制造方法
公开(公告)号：US07411222B2
公开(公告)日：2008-08-12
申请号：US10567560
申请日：2004-11-11
申请人： Junichi Kinoshita , Tsuneo Nakayama , Takao Mizukami , Yuji Wagatsuma , Kiyoshi Matsunaga , Naoki Matsuoka , Norihiko Ochi
发明人： Junichi Kinoshita , Tsuneo Nakayama , Takao Mizukami , Yuji Wagatsuma , Kiyoshi Matsunaga , Naoki Matsuoka , Norihiko Ochi
IPC分类号： H01L33/00 , G02B6/00
CPC分类号： H01L33/60 , H01L33/486 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A package for light emitting element including a package main body 1 having a bottom face 7a on which a light emitting element 2 is arranged, and a concave portion 7 which is formed in an inverted truncated cone shape by an inner wall face 7b intersecting with the bottom face 7a with a predetermined angle, and a translucent member 6 filled in the concave portion 7 of the package main body 1, the angle between the inner wall face 7b composing the concave portion 7 and the bottom face 7a is selected within ±15° of the incident critical angle in which a direct light radiated from the light emitting element 2 undergoes total reflection at the interface between the translucent member 6 and air.
摘要翻译：一种发光元件的封装，包括具有布置有发光元件2的底面7A的封装主体1和通过内壁面7b相交的倒锥形形状的凹部7 底面7a为预定角度，填充在包装主体1的凹部7中的透光性部件6构成凹部7的内壁面7b与底面部7a之间的角度为在入射临界角的±15°内选择，其中从发光元件2辐射的直接光在透光构件6与空气之间的界面处经历全反射。

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